PANASONIC 2SD1262

Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262 and 2SD1262A
–60
VEBO
–7
V
Peak collector current
ICP
–12
A
Collector current
IC
–8
A
dissipation
Ta=25°C
45
PC
Junction temperature
Tj
Storage temperature
Tstg
2SB939
2SB939A
ICBO
Emitter cutoff current
IEBO
Collector to emitter
2SB939
voltage
2SB939A
Forward current transfer ratio
150
˚C
˚C
1
Conditions
1:Base
2:Collector
3:Emitter
N Type Package (DS)
3
–100
–100
VEB = –7V, IC = 0
–2
–60
IC = –30mA, IB = 0
hFE1*
VCE = –3V, IC = –4A
2000
500
VBE(sat)
IC = –4A, IB = –8mA
Transition frequency
fT
VCE = –10V, IC = – 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
µA
mA
10000
–1.5
–2
IC = –4A, IB1 = –8mA, IB2 = 8mA,
VCC = –50V
Internal Connection
Unit
V
–80
Base to emitter saturation voltage
P
max
VCB = –80V, IE = 0
VCEO
Rank classification
typ
VCB = –60V, IE = 0
IC = –4A, IB = –8mA
Q
2
min
VCE = –3V, IC = –8A
hFE1
0 to 0.4
1.1 max.
VCE(sat)
Rank
R0.5
R0.5
5.08±0.5
hFE2
FE1
1.0±0.1
2.54±0.3
Collector to emitter saturation voltage
*h
6.0±0.3
0.8±0.1
–55 to +150
Symbol
current
3.4±0.3
(TC=25˚C)
Parameter
Collector cutoff
8.5±0.2
W
1.3
■ Electrical Characteristics
Unit: mm
V
–80
Emitter to base voltage
Collector power TC=25°C
2.0
V
–80
VCEO
1:Base
2:Collector
3:Emitter
N Type Package
3
14.7±0.5
emitter voltage 2SB939A
2
+0.4
2SB939
–60
VCBO
1
Unit
3.0–0.2
Collector to
Ratings
4.4±0.5
2SB939A
10.5min.
2.54±0.3
5.08±0.5
+0
base voltage
0.5max.
1.5–0.4
2SB939
1.1max.
0.8±0.1
(TC=25˚C)
Symbol
Collector to
1.5±0.1
10.0±0.3
Parameter
1.5max.
10.0±0.3
■ Absolute Maximum Ratings
1.0±0.1
2.0
●
High foward current transfer ratio hFE
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
4.4±0.5
●
Unit: mm
6.0±0.5
■ Features
●
3.4±0.3
8.5±0.2
V
V
15
MHz
0.5
µs
2
µs
1
µs
C
B
2000 to 5000 4000 to 10000
E
1
Power Transistors
2SB939, 2SB939A
PC — Ta
IC — VCE
VCE(sat) — IC
–8
20
IB=–2.0mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
–6
–5
– 0.8mA
–4
– 0.6mA
–3
– 0.4mA
–2
10
(2)
– 0.2mA
–1
(3)
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–1
–10
(3)
–3
(2)
(1)
–1
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=500
–10
TC=–25˚C
25˚C
100˚C
–3
–1
– 0.3
– 0.3
–1
–3
–10
– 0.1
– 0.1
– 0.3
–3
104
–25˚C
103
–1
–3
–10
Collector current IC (A)
–3
–10
(1) IC/IB=250
(2) IC/IB=500
(3) IC/IB=1000
TC=25˚C
–30
–10
(1)
(2)
(3)
–3
–1
– 0.1
– 0.1
–10
–1
–3
–10
Area of safe operation (ASO)
–100
10000
IE=0
f=1MHz
TC=25˚C
300
100
30
Non repetitive pulse
TC=25˚C
–30
ICP
–10
t=1ms
IC
–3
10ms
–1
300ms
– 0.3
10
– 0.1
3
1
– 0.1 – 0.3
– 0.3
Collector current IC (A)
1000
25˚C
–1
–100
Collector current IC (A)
Collector output capacitance Cob (pF)
Forward current transfer ratio hFE
–1
3000
– 0.3
– 0.3
Collector current IC (A)
Cob — VCB
VCE=–3V
TC=100˚C
– 0.1
– 0.1
– 0.3
hFE — IC
105
–25˚C
–1
VBE(sat) — IC
–30
Collector current IC (A)
102
– 0.1
–5
TC=100˚C
– 0.3
Collector current IC (A)
Collector to emitter saturation voltage VCE(sat) (V)
(1) IC/IB=250
(2) IC/IB=500
(3) IC/IB=1000
TC=25˚C
–30
–4
25˚C
–3
VBE(sat) — IC
–100
– 0.3
2
–3
–10
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
– 0.1
– 0.1
–2
–30
2SB939
0
IC/IB=500
– 0.03
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
– 0.01
–1
–3
–10
–30
2SB939A
30
TC=25˚C
–7
Base to emitter saturation voltage VBE(sat) (V)
40
–100
Collector to emitter saturation voltage VCE(sat) (V)
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
(1)
Collector current IC (A)
Collector power dissipation PC (W)
50
–100 –300 –1000
Collector to emitter voltage VCE (V)
Power Transistors
2SB939, 2SB939A
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3