Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation Ta=25°C 45 PC Junction temperature Tj Storage temperature Tstg 2SB939 2SB939A ICBO Emitter cutoff current IEBO Collector to emitter 2SB939 voltage 2SB939A Forward current transfer ratio 150 ˚C ˚C 1 Conditions 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 –100 –100 VEB = –7V, IC = 0 –2 –60 IC = –30mA, IB = 0 hFE1* VCE = –3V, IC = –4A 2000 500 VBE(sat) IC = –4A, IB = –8mA Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf µA mA 10000 –1.5 –2 IC = –4A, IB1 = –8mA, IB2 = 8mA, VCC = –50V Internal Connection Unit V –80 Base to emitter saturation voltage P max VCB = –80V, IE = 0 VCEO Rank classification typ VCB = –60V, IE = 0 IC = –4A, IB = –8mA Q 2 min VCE = –3V, IC = –8A hFE1 0 to 0.4 1.1 max. VCE(sat) Rank R0.5 R0.5 5.08±0.5 hFE2 FE1 1.0±0.1 2.54±0.3 Collector to emitter saturation voltage *h 6.0±0.3 0.8±0.1 –55 to +150 Symbol current 3.4±0.3 (TC=25˚C) Parameter Collector cutoff 8.5±0.2 W 1.3 ■ Electrical Characteristics Unit: mm V –80 Emitter to base voltage Collector power TC=25°C 2.0 V –80 VCEO 1:Base 2:Collector 3:Emitter N Type Package 3 14.7±0.5 emitter voltage 2SB939A 2 +0.4 2SB939 –60 VCBO 1 Unit 3.0–0.2 Collector to Ratings 4.4±0.5 2SB939A 10.5min. 2.54±0.3 5.08±0.5 +0 base voltage 0.5max. 1.5–0.4 2SB939 1.1max. 0.8±0.1 (TC=25˚C) Symbol Collector to 1.5±0.1 10.0±0.3 Parameter 1.5max. 10.0±0.3 ■ Absolute Maximum Ratings 1.0±0.1 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 V V 15 MHz 0.5 µs 2 µs 1 µs C B 2000 to 5000 4000 to 10000 E 1 Power Transistors 2SB939, 2SB939A PC — Ta IC — VCE VCE(sat) — IC –8 20 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA –6 –5 – 0.8mA –4 – 0.6mA –3 – 0.4mA –2 10 (2) – 0.2mA –1 (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –10 (3) –3 (2) (1) –1 Base to emitter saturation voltage VBE(sat) (V) IC/IB=500 –10 TC=–25˚C 25˚C 100˚C –3 –1 – 0.3 – 0.3 –1 –3 –10 – 0.1 – 0.1 – 0.3 –3 104 –25˚C 103 –1 –3 –10 Collector current IC (A) –3 –10 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –30 –10 (1) (2) (3) –3 –1 – 0.1 – 0.1 –10 –1 –3 –10 Area of safe operation (ASO) –100 10000 IE=0 f=1MHz TC=25˚C 300 100 30 Non repetitive pulse TC=25˚C –30 ICP –10 t=1ms IC –3 10ms –1 300ms – 0.3 10 – 0.1 3 1 – 0.1 – 0.3 – 0.3 Collector current IC (A) 1000 25˚C –1 –100 Collector current IC (A) Collector output capacitance Cob (pF) Forward current transfer ratio hFE –1 3000 – 0.3 – 0.3 Collector current IC (A) Cob — VCB VCE=–3V TC=100˚C – 0.1 – 0.1 – 0.3 hFE — IC 105 –25˚C –1 VBE(sat) — IC –30 Collector current IC (A) 102 – 0.1 –5 TC=100˚C – 0.3 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –30 –4 25˚C –3 VBE(sat) — IC –100 – 0.3 2 –3 –10 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 – 0.1 – 0.1 –2 –30 2SB939 0 IC/IB=500 – 0.03 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 –1 –3 –10 –30 2SB939A 30 TC=25˚C –7 Base to emitter saturation voltage VBE(sat) (V) 40 –100 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) Collector current IC (A) Collector power dissipation PC (W) 50 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB939, 2SB939A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3