Infineon RF Power 50V Transistors

Product Brief
Rugged LDMOS & GaN RF power transistors
Cellular, radar, commercial avionics, ISM & broadcast applications
Infineon’s latest generation of RF Power products enable the design of compact, broadband and efficient RF power amplifiers. Our LDMOS & GaN technologies provide the most
advanced, rugged, and stable solutions for pulsed and CW applications.
››450 MHz to 2700 MHz
››5 W to 1000 W
››High ruggedness & efficiency
››High RF consistency
››Broadband performance
››Optimized for DPD systems
››Reference designs
600 W L-Band GaN HEMT
››P3dB = 610 W
››1200 – 1400 MHz
››70% Efficiency
››18 dB Gain
››Evaluation board
GTVA126001FC
––1200 – 1400 MHz
Radar and commercial avionics LDMOS product line
Product
Operating
frequency
(MHz)
Matching
PTVA030121EA
390 – 450
PTVA035002EV
390 – 450
PTVA102001EA
@P1dB
@P3dB
POUT (W)
Gain (dB)
Eff (%)
Unmatched
12
25.0
Unmatched
400
19.5
1030 / 1090
I/O
200
PTVA104501EH
960 – 1215
I/O
PTVA101K02EV
1030 / 1090
PTVA120251EA
Pulse
VDD (V)
Package
type
POUT (W)
Gain (dB)
Eff (%)
69
14
22.0
73
12 µs, 10% DC
50
H-36265-2
65
500
17.5
67
12 µs, 10% DC
50
H-36275-4
18.0
57
230
16.0
58
128 µs, 10% DC
50
H-36265-2
450
17.0
57
490
15.0
55
128 µs, 10% DC
50
H-36288-2
I
920
18.0
56
1090
16.0
57
128 µs, 10% DC
50
H-36275-4
500 – 1400
Unmatched
30
16.0
56
40
14.0
59
300 µs, 10% DC
50
H-36265-2
PTVA120501EA
1200 – 1400
I
54
16.5
55
63
14.5
57
300 µs, 10% DC
50
H-36265-2
PTVA123501EC/FC
1200 – 1400
I/O
375
16.0
56
415
14.0
57
300 µs, 12% DC
50
H-36248-2/H-37248-2
PTVA127002EV
1200 – 1400
I/O
700
16.0
55
800
14.0
58
300 µs, 10% DC
50
H-36275-4
Radar and commercial avionics GaN product line
Product
Operating
frequency
(MHz)
Matching
GTVA104001FA
960 – 1215
GTVA107001FC
960 – 1215
GTVA126001FC
GTVA123501FA
@P3dB
Pulse
VDD (V)
Package
type
POUT (W)
Gain (dB)
Eff (%)
I
410
18.5
70
128 µs, 10% DC
50
H-37265J-2
I
750
17
70
128 µs, 10% DC
50
H-37265J-2
1200 – 1400
I
610
18
70
300 µs, 10% DC
50
H-37248-2
1200 – 1400
I
370
18
72
300 µs, 10% DC
50
H-37248-2
www.infineon.com/rfpower
Product Brief
New solutions for radar & ISM applications
NEW
700 W Avionics GaN HEMT
NEW
››GTVA107001FC
››P3dB = 750 W
››960 – 1215 MHz
››70% Efficiency
››17 dB Gain
350 W L-Band GaN HEMT
220 W ISM LDMOS Transistor
NEW
››GTVA123501FA
››P3dB = 370 W
››1200 – 1400 MHz
››72% Efficiency
››18 dB Gain
››PXFD252207NF
››P1dB = 220 W
››2400 – 2500 MHz
››58% Efficiency
››17 dB Gain
UHF/Broadcast product line
Product
Operating frequency
(MHz)
Matching
DVB-T characteristics
VSWR
Package type
POUT (W)
Gain (dB)
Eff (%)
ACPR (dBc)
PTVA042502EC/FC
470 – 806
I
55
19.0
25.5
PTVA043502EC/FC
470 – 860
I
70
17.5
25.0
–29.5
10:1
H-36248-4/ H-37248-4
–30.0
10:1
PTVA047002EV
470 – 806
I
130
17.5
29.0
H-36248-4/ H-37248-4
–29.0
10:1
H-36275-4
ISM (2.4 GHz) product line
Product
Operating frequency
(MHz)
Matching
2400 – 2500
I/O
NEW PXFD252207NF
@P1dB
@P3dB
POUT (W)
Gain (dB)
Eff (%)
POUT (W)
Gain (dB)
Eff (%)
210
16.7
57
250
14.7
57.5
Test signal
VDD (V)
CW
28
General purpose transistors (700 MHz – 2200 MHz)
Product
Operating frequency
(MHz)
Matching
P1dB typ
(W)
Gain typ
(dB)
Eff typ
(%)
Test signal
Supply voltage
typ (V)
RqJ=C
(°C/W)
PTFC270051M
900 – 2700
Unmatched
7.3
20.3
60
CW @ 2170
28
3.84
PTFC270101M
900 – 2700
Unmatched
12
20.0
60
CW @ 2140
28
4.04
NEW PTVA120121M
500 – 1400
Unmatched
12
21.0
65
CW @ 821
50
4.97
NEW PTVA120252MT
500 – 1400
Unmatched
25
19.8
64
CW @ 960
48
2.6
Package type
SON-10
SON-16
LDMOS integrated RF power amplifiers (700 MHz – 2200 MHz)
Product
Operating frequency
(MHz)
P1dB
Typ (W)
Gain typ
(dB)
Eff typ
(%)
POUT avg
(W)
Test signal
Supply voltage
typ (V)
RqJC
(°C/W)
PTMA080152M
700 – 1000
20
30
34
8
GSM/EDGE
28
8.5/2.5
PTMA180402M
1800 – 2200
40
30
16
5
CDMA
28
3.6/1.5
PTMA210152M
1800 – 2200
20
28.5
33
7
WCDMA
28
3.6/1.5
1800 – 2200
10+10
30.5
19
2.5
WCDMA
28
9.7/3.1
NEW PTMC210204MD
Package type
DSO-20-63
HB1DSO-14
See our entire portfolio of RF Power solutions at www.infineon.com/rfpower or contact us at [email protected]
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR
PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR
PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT
PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND
THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE
THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED
APPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
THE INFORMATION GIVEN HEREIN AT ANY TIME.
Order Number: B154-I0143-V3-7600-NA-EC-P
Date: 05 / 2016
Additional information
For further information on technologies, our products, the
application of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
office (www.infineon.com).
Warnings
Due to technical requirements, our products may contain
dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by us in a written
document signed by authorized representatives of Infineon
Technologies, our products may not be used in any life-­
endangering applications, including but not limited to medical,
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failure of the product or any consequences of the use thereof
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