PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermally-enhanced overmolded package for cool and reliable operation. Features Broadband Performance VDD = 28 V, IDQ1 = 80 mA, IDQ1 = 160 mA Fixture Tuned For 2110 - 2170 MHz 32 20 30 15 Gain (dB) 26 5 24 0 22 -5 20 18 -10 Return Loss -15 16 -20 14 -25 12 1500 1700 • Designed for wide RF bandwidth and low memory effects • Broadband input on-chip matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V, 7 W avg. - Gain = 28.5 dB - Efficiency = 33 % - IMD3 = –32 dBc • Typical CW performance at 2140 MHz, 28 V - Output power at P–1dB ~ 20 W - Efficiency > 49% • Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F • Capable of handling 10:1 VSWR @ 28 V, 15 W (CW) output power • Thermally-enhanced RoHS-compliant package 10 Gain 1900 2100 2300 Return Loss (dB) 28 PTMA210152M Package PG-DSO-20-63 -30 2500 Frequency (MHz) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDS = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, ƒ = 2110 – 2170 MHz, POUT = 7 W average Characteristic POUT Conditions Symbol Min Typ Max Unit Gps — 28.5 — dB η — 33 — % IRL — –14 — dB Adjacent Channel Power Ratio ACPR — –36 — dBc Intermodulation Distortion IMD3 — –32 — dBc Gain Power Added Efficiency Input Return Loss table continued next page All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-carrier WCDMA Measurements (cont.) VDS = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, ƒ = 2110 – 2170 MHz, POUT = 7 W average Characteristic Symbol Min Typ Max Unit Spurs Load 3:1 — — –60 — dBc Gain Flatness ΔG — 0.43 — dB Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, POUT = 15 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 27.5 28.5 30 dB Drain Efficiency ηD 33 34 — % Intermodulation Distortion IMD — –33 –30 dBc — –14 –10 dB Input Return Loss DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance Stage 1 VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — Ω Stage 2 VGS = 10 V, VDS = 0.1 V RDS(on) — 3.5 — Ω Operating Gate Voltage VDS = 28 V, IDQ = CCC mA VGS 2 2.5 3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA *See Infineon distributor for future availability. Data Sheet 2 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Input Power PIN 15 dBm Total Device Dissipation PD 70 W 0.4 W/°C TSTG –40 to +150 °C Stage 1 RθJC 10.7 °C/W Stage 2 RθJC 2.9 °C/W Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 15 W CW) Moisture Sensitivity Level Level Test Standard 3 IPC/JEDEC J-STD-020 Package Temperature 260 Unit °C Ordering Information Type and Version Package Outline Package Description Shipping PTMA210152M V1 PG-DSO-20-63 Thermally-enhanced surface-mount Tape Data Sheet 3 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Typical Performance at 2140 MHz (data taken in a production test fixture) CW Performance CW Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA For 2110, 2140, 2170 MHz VDD1 = 28 V, VDD2 = 32, 28, 24 V, 50 Gain 40 2110 MHz 2140 MHz 2170 MHz 26 25 35 30 24 25 23 20 22 15 Efficiency 21 10 20 29 28 31 33 35 37 39 41 43 26 25 24 24 V 28 V 32 V 23 22 21 5 29 Gain 27 20 45 29 31 33 Output Power (dBm) 37 39 41 43 WCDMA Performance Two-tone Drive-up VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA For 2110, 2140, 2170 MHz 45 2110 MHz 2140 MHz 2170 MHz 35 -30 Power Added Efficiency (%) 40 ACPR -35 30 -40 25 -45 20 -50 Efficiency 15 -55 10 -60 30 32 34 36 45 45 -25 ACPR (dBc) Power Added Efficiency (%) 35 Output Power (dBm) 38 5 2110 MHz 2140 MHz 2170 MHz 40 35 Efficiency -5 -15 30 -25 25 -35 IMD3 20 -45 15 -55 10 -65 5 40 -75 30 Output Power (dBm) IMD3 (dBc) 27 45 30 Gain (dB) 55 29 Power Added Efficiency (%) 30 28 Gain (dB) IDQ1 = 80 mA, IDQ2 = 160 mA, ƒ = 2140 MHz 32 34 36 38 40 42 44 Output Power, avg. ( dBm ) *See Infineon distributor for future availability. Data Sheet 4 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Typical Performance at 2140 MHz (cont.) Two-carrier WCDMA Performance Two-carrier WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz 30 -40 25 -45 IMD3 20 -50 15 -55 Efficiency 10 -60 30 32 34 36 38 40 40 35 -30 -35 30 -40 25 -45 ACPR 20 -50 15 -55 Efficiency 10 42 -60 30 32 34 36 38 40 42 Output Power (dBm) Output Power (dBm) Two-carrier WCDMA Performance Six-carrier TD-SCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2140 MHz at various temperatures VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz -25 40 –25 °C -30 35 25 °C 90 °C -35 -40 30 25 -45 ACPR 45 -50 20 -55 15 Efficiency -60 10 30 32 34 36 38 40 -25 2110 MHz 2140 MHz 2170 MHz 40 35 -30 -35 30 -40 ACPR 25 -45 20 -50 Efficiency 15 -55 10 42 -60 30 Output Power (dBm) Data Sheet Power Added Efficiency (%) 45 Power Added Efficiency (%) -25 2110 MHz 2140 MHz 2170 MHz ACPR (dBc) -35 Power Added Efficiency (%) 35 -30 IMD3 (dBc) 40 45 ACPR (dBc) -25 2110 MHz 2140 MHz 2170 MHz ACPR (dBc) Power Added Efficiency (%) 45 32 34 36 38 40 42 Output Power (dBm) 5 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Typical Performance at 2140 MHz (cont.) Gate - Source Voltage vs. Temperature Normalized Gate - Source Voltage VDD = 28, IDQ1 = 80 mA, IDQ2 = 160 mA 1.15 1.10 1.05 1.00 0.95 VG1 VG2 0.90 0.85 -30 -10 10 30 50 70 90 Temperature (ºC) Broadband Circuit Impedance, 2140 MHz Z Load D Z Load W –5.80 2118 1.85 –5.76 2122 1.84 –5.72 2126 1.82 –5.67 2130 1.80 –5.63 2134 1.78 –5.60 2138 1.77 –5.55 2142 1.75 –5.51 2146 1.73 –5.47 2150 1.71 –5.42 2154 1.70 –5.38 2158 1.68 –5.34 2162 1.66 –5.30 2166 1.65 –5.25 2170 1.63 –5.21 Data Sheet S Z0 = 50 Ω 0.3 1.87 0.2 2114 0.1 –5.84 0 .0 1.89 DT OW ARD LOA GT HS EL EN 2110 IN Z Load 2170 MHz 2110 MHz 0.1 WAV <--- jX R R - W AV E LE NGT H S T OW A MHz 0 .1 Frequency 0. 2 6 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Reference Circuit, 2140 MHz VD1 C1 100μF 50V J1 C2 10μF C3 1μF C4 0.1μF C5 12pF VD2 2 1 C6 0.5pF VG1 1 2 3 4 PTMA210152M 5 6 7 8 9 10 R3 a 2 1 0 1 5 2 C7 10μF R1 0 C8 1μF C15 12 pF DUT C9 0.1μF m 20 19 18 17 16 15 14 13 12 11 C16 0.1μF C17 1μF 4 C18 10μF C19 100μF 50V C22 12pF 3 7 8 9 J2 _ b d _ 7 - 2 3 - 0 9 5 C10 12pF 6 C20 2.2pF Q1 C21 1.0pF VG2 R4 C11 10μF R2 0 C12 1μF C13 0.1μF C14 12pF Q2 Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PCB PTMA210152M LTN/PTMA210152M Microstrip 1 2 3 4 5 6 7 8 9 Data Sheet LDMOS IC 0.76 mm [.030"] thick, εr = 3.43 Electrical Characteristics at 2140 MHz 0.228 0.125 0.054 0.340 0.005 0.005 0.100 0.271 0.066 λ, λ, λ, λ, λ, λ, λ, λ, λ, 50 50 10 61 71 71 34 44 50 Rogers RO4350 Dimensions: L x W (mm) Ω Ω Ω Ω Ω Ω Ω Ω Ω 17.48 x 1.70 9.40 x 1.70 4.09 x 12.83 25.91 x 1.19 0.38 x 0.89 0.38 x 0.89 7.47 x 3.00 20.40 x 2.11 4.95 x 1.70 7 of 15 1 oz. copper Dimensions: L x W (in.) 0.688 0.370 0.161 1.020 0.015 0.015 0.294 0.803 0.195 x x x x x x x x x 0.067 0.067 0.505 0.047 0.035 0.035 0.118 0.083 0.067 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Reference Circuit, 2140 MHz (cont.) VD1 C17 VD2 C19 C1 C15 C16 C2 C18 C3 C4 C5 C6 RF_IN C21 C22 RF_OUT C10 C9 C8 C13 C12 C11 C7 VG1 VG2 R3 R1 C20 C14 Q1 R4 Q2 R2 PTMA210152 M a210152 m_ cd_7 -23 - 09 Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 C4, C9, C13, C16 C2, C7, C11, C18 C1, C19 C6 C20 C21 C5, C10, C14, C15, C22 Q1, Q2 R1, R2 R3, R4 Ceramic capacitor, 1 µF Capacitor, 0.1 µF Tantalum capacitor, 10 µF, 50 V Electrolytic capacitor, 100 µF, 50 V Ceramic capacitor, 0.5 pF Ceramic capacitor, 2.2 pF Ceramic capacitor, 1.0 pF Ceramic capacitor, 12 pF Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC 445-1411-2-ND PCC104BCT-ND P5571-ND PCE3718CT-ND 600S 0R5 CT 600S 2R2 CT 600S 1R0 CT 600S 120 JT Transistor Chip resistor, 0 ohms Potentiometer, 2 k ohms Infineon Technologies Digi-Key Digi-Key BCP56 P00ECT-ND 3224W-202ETR-ND *Gerber Files for this circuit available on request Data Sheet 8 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Typical Performance, 1840 MHz (data taken in Infineon test fixture) CW Performance Two-tone Drive-up VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA ƒ = 1805, 1830, 1880 MHz VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA ƒ = 1805, 1830, 1880 MHz 24 22 45 40 20 18 35 30 16 14 25 20 Efficiency 12 10 15 10 29 31 33 35 37 39 41 43 45 35 30 -20 -25 -30 IMD3 25 -35 20 -40 15 -45 10 -50 Efficiency 5 -55 0 45 -60 29 Output Power (dBm) 31 33 35 37 39 41 Edge - EVM VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 160 mA, series are at selected frequencies VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 160 mA, series are at selected frequencies 40 35 Efficiency 30 25 50 -40 45 -45 -50 -55 400 kHz -60 20 -65 15 -70 10 -75 5 -80 600 kHz 0 Power Added Efficiency (%) 1805.2 MHz 1836.6 MHz 1879.8 MHz -35 Modulation Spectrum (dBc) 45 43 Output Power, avg. (dBm) Edge Modulation Spectrum Performance 50 Power Added Efficiency (%) -15 1805 MHz 1830 MHz 1880 MHz 40 -85 40 35 10 1805.2 MHz 1836.6 MHz 1879.8 MHz 9 Efficiency 6 25 5 20 4 15 3 10 2 EVM 5 1 0 0 30 31 32 33 34 35 36 37 38 39 40 41 42 Output Power (dBm) Output Power (dBm) 9 of 15 7 30 30 31 32 33 34 35 36 37 38 39 40 41 42 Data Sheet 8 Error Vector Magnitude (%) 1805 MHz 1830 MHz 1880 MHz -10 IMD3 (dBc) 55 50 50 Power Added Efficiency (%) Gain 28 26 Gain (dB) 65 60 Power Added Efficiency (%) 32 30 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Broadband Circuit Impedance, 1840 MHz Z Load W 4.28 –7.57 1820 4.21 –7.48 1830 4.15 –7.40 1840 4.09 –7.30 1850 4.03 –7.21 1860 3.96 –7.12 1870 3.90 –7.03 1880 3.85 –6.94 1890 3.79 –6.85 1900 3.73 –6.76 1910 3.67 –6.67 1920 3.62 –6.57 1930 3.56 –6.48 1940 3.50 –6.39 1950 3.45 –6.30 1960 3.40 –6.21 1970 3.34 –6.11 1980 3.29 –6.02 1990 3.24 –5.93 2000 3.19 –5.84 Data Sheet Z Load IN S Z0 = 50 Ω 0.1 0.5 1810 D 0.4 –7.66 0.3 4.34 0.2 1800 0.1 jX 0.0 R W ARD LOA D T HS T O L ENG MHz Z Load 2000 MHz E W AV <--- Frequency 1800 MHz 0. 2 10 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Reference Circuit, 1840 MHz VD1 C1 100μF 50V C2 1μF C3 10μF C4 0.1μF C5 12pF DUT L1 2.7nH J1 VD2 2 1 C6 1pF VG1 1 2 3 4 PTMA210152M 5 6 7 8 9 10 R3 a 2 1 0 1 5 2 C7 1μF R1 0 C8 10μF C15 12 pF C9 0.1μF m 20 19 18 17 16 15 14 13 12 11 C16 0.1μF C17 10μF 4 C18 1μF C19 100μF 50V C22 12pF 3 7 6 8 C21 3.3pF 5 C20 1.2pF _ b d _ 7 - 2 3 - 0 9 C10 12pF Q1 VG2 R4 R2 0 C11 1μF C12 10μF C13 0.1μF C14 12pF Q2 Reference circuit schematic for ƒ = 1840 MHz Circuit Assembly Information DUT PCB PTMA210152M LTN/PTMA210152M–18 Microstrip 1 2 3 4 5 6 7 8 Data Sheet LDMOS IC 0.76 mm [.030"] thick, εr = 3.43 Electrical Characteristics at 1840 MHz Rogers RO4350 Dimensions: L x W (mm) 0.135 λ, 50 Ω 0.438 λ, 50 Ω 0.073 λ, 10 Ω 0.461 λ, 61 Ω 0.0068 λ, 71 Ω 0.0307 λ, 44 Ω 0.465 λ, 44 Ω 0.0881 λ, 50 Ω 7.59 x 1.70 24.66 x 1.70 4.09 x 12.83 25.91 x 1.19 0.38 x 0.89 1.73 x 2.08 26.16 x 2.08 4.95 x 1.70 11 of 15 1 oz. copper Dimensions: L x W (in.) 0.299 0.971 0.161 1.020 0.015 0.068 1.030 0.195 x x x x x x x x 0.067 0.067 0.505 0.047 0.035 0.082 0.082 0.067 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Reference Circuit, 1840 MHz (cont.) VD1 C19 C1 C15 C16 C2 C3 C4 C18 C5 L1 C21 RF_IN C9 C6 VD2 C17 RF_OUT C10 C20 C14 C8 C7 C13 C12 C11 VG1 VG2 R3 R1 C22 Q1 R4 Q2 R2 PTMA210152M a210152 m_ cd_7 -23 - 09 Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 C4, C9, C13, C16 C2, C7, C11, C18 C1, C19 C6 C20 C21 C5, C10, C14, C15, C22 Q1, Q2 R1, R2 R3, R4 L1 Ceramic capacitor, 1 µF Capacitor, 0.1 µF Tantalum capacitor, 10 µF, 50 V Electrolytic capacitor, 100 µF, 50 V Ceramic capacitor, 1.0 pF Ceramic capacitor, 1.2 pF Ceramic capacitor, 3.3 pF Ceramic capacitor, 12 pF Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC 445-1411-2-ND PCC104BCT-ND P5571-ND PCE3718CT-ND 600S 1R0 CT 600S 1R2 CT 600S 3R3 CT 600S 120 JT Transistor Chip resistor, 0 ohms Potentiometer, 2 k ohms Inductor, 2.7 nH Infineon Technologies Digi-Key Digi-Key Digi-Key BCP56 P00ECT-ND 3224W-202ETR-ND PCD1287CT-ND *Gerber Files for this circuit available on request Data Sheet 12 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Pinout Diagram VDD1 1 20 NC NC 2 19 NC NC 3 18 VDD2 RFOUT NC 4 17 VDD2 RFOUT RFIN 5 16 VDD2 RFOUT RFIN 6 15 VDD2 RFOUT VG1 7 14 VDD2 RFOUT VG2 8 13 VDD2 RFOUT NC 9 12 NC NC 10 11 NC a 2 10 1 5 2 m- v 1 _ p d _ 0 9 - 0 2 - 2 00 9 Source: Plated copper heatslug on backside of package Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 13 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Package Outline Specifications Package PG-DSO-20-63 6. 13.00 [0.512] MAX INDEX PIN 1 1 10 2X 2.90 [0.114] MAX (2 PLS) 14.20±0.30 [0.559±0.012] 6.00 6. 2.95 [0.116] [0.236] 11.00 [0.433] 11 20 9 X 1.27 = 11.43 9 X .050 = .450 TOP VIEW BOTTOM VIEW 1.10 [0.043] MAX (2 PLS) 4. 14°±1° (2 PLS) TOP/BOTTOM ALL SIDES 11.00±0.10 [0.433±0.004] SEE DETAIL A 3.50 [0.137] MAX 1.27 [0.050] 15.90±0.10 [0.626±0.004] 0.40+0.13 [0.015+0.005] 5. END VIEW 0.25mm M C A S B S SIDE VIEW 0.35 [0.014] GAUGE PLANE 0.15 [0.006] REF 0.25+0.07 –0.02 [0.010+0.003 –0.001 ] PG-DSO-20-63_po_02-19-2010 0+0.1 [0+0.004] STANDOFF 0.95±0.15 [0.037±0.006] 1.60 [0.063] REF DETAIL A Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. JEDEC drawing number: MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte) : 5 – 15 micron [196.85 – 590.55 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 14 of 15 Rev. 04, 2010-04-16 PTMA210152M V1 Confidential, Limited Internal Distribution Revision History: 2010-04-16 2009-10-19 Data Sheet Previous Version: Page Subjects (major changes since last revision) 3 Added moisture sensitivity level table 14 Updated package outline notes Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-04-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 15 of 15 Rev. 04, 2010-04-16