Integrated RF Power Amplifiers Product Brief

Product Brief
Integrated RF Power Amplifiers
700 MHz to 2200 MHz
Features
Infineon’s family of LDMOS integrated RF power amplifiers consists of two-stage
15 W, 30 W, 40 W and 45 W internally-matched single-chip ICs covering all typical
cellular base station modulation formats from 700 MHz to 2.2 GHz. Thermallyenhanced ceramic open-cavity and molded-plastic packages offer cool and reliable
operation.
„„
Wide RF modulation bandwidths
and low memory effects
„„
Operation from 700 MHz to
2.2 GHz
„„
High gain and broadband
on-chip matching
„„
Excellent thermal stability
„„
RoHS-compliant
„„
Integrated ESD protection
„„
Reference circuits available
Product Summary
Product
Operating
P1dB
Gain
PAE
POUT
Frequency
Typ
Typ
Typ
Avg
Test Signal
qJC
Package Type
[ºC/W]
[MHz]
[W]
[dB]
[%]
[W]
PTMA080152M
700–1000
20
30
34
8
GSM/EDGE
8.5/2.5
PG-DSO-20-63
PTMA080302M
700–1000
30
31
36
15
GSM/EDGE
6.7/1.7
PG-DSO-20-63
PTMA080304M
700–1000
2x15
30
33
8
GSM/EDGE
8.5/2.5
PG-DSO-20-63
PTMA180402EL
1800–2000
40
30
14
4
CDMA
3.5/1.1
H-33265-8
PTMA180402FL
1800–2000
40
30
14
4
CDMA
3.5/1.1
H-34265-8
PTMA180402M
1800–2000
40
30
16
5
CDMA
3.6/1.5
PG-DSO-20-63
PTMA210152M
1800–2000
20
28.5
33
7
WCDMA
10.7/2.9
PG-DSO-20-63
PTMA210452EL
1900–2200
45
28
10.5
3.2
WCDMA
3.5/1.3
H-33265-8
PTMA210452FL
1900–2200
45
28
10.5
3.2
WCDMA
3.5/1.3
H-34265-8
Note: Typical supply voltage is at 28 V
[ www.infineon.com/rfpower]
Product Brief
Integrated RF Power Amplifiers
700 MHz to 2200 MHz
Available Packages
Broadband Performance
Broadband Performance
Fixture tuned for 2110 – 2170 MHz
22
-10
18
-15
14
-20
Return Loss
10
1700
1800
1900
2000
2100
-25
2200
28
Gain (dB)
-5
10
Gain
24
0
20
-10
Return Loss
Return Loss (dB)
0
Gain
26
20
32
Return Loss (dB)
30
Gain (dB)
VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA,
5
34
Molded Plastic
Broadband Performance
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA,
Fixture tuned for 1930 – 1990 MHz
-20
16
12
1500
1700
1900
2100
2300
PG-DSO-20-63
Open Cavity
-30
2500
Frequency (MHz)
Frequency (MHz)
H-33265-8
PTMA210152M
PTMA180402M
PTMA080304M
Features
Dual (2x15 W) Integrated Amplifiers
„„Typical channel isolation = 20 dB
H-34265-8
„„
Typical CW single channel performance,
960 MHz, 28 V
V DD -1A
1
20
V DD -2A RF
OUT -A
V DD -1A
2
19
V DD -2A RF
OUT -A
RF
3
18
V DD -2A RF
OUT -A
IN-A
–– POUT = 20 W
–– Efficiency = 50%
„„
Typical GSM / EDGE performance of each
channel, 960 MHz, 28 V
–– Average output power = 8 W
V G -1A
4
17
NC
V G -2A
5
16
NC
V DD -1B
6
15
NC
–– EVM = 1.91%
V DD -1B
7
14
NC
–– ACPR @ 400 KHz = –63 dBc
RF
IN-B
8
13
V DD -2B RF
OUT -B
V G -1B
9
12
V DD -2B RF
OUT -B
V G -2B
10
11
V DD -2B RF
a080304 m - v 1_pd _ 04- 20- 2010
–– Gain = 30 dB
–– Efficiency = 33%
–– ACPR @ 600 KHz = –76 dBc
OUT -B
„„
Capable of handling 10:1 VSWR @ 28 V, 15 W
(CW) output power
„„
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
„„
RoHS-compliant
Source:Plated copper heatslug on backside of package
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2012 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B154-H9241-G2-X-7600
Date: 02 / 2012
ATTENTION PLEASE!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property
rights of any third party.
INFORMATION
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
WARNINGS
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office. Infineon Technologies Components may only be
used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.