Product Brief Integrated RF Power Amplifiers 700 MHz to 2200 MHz Features Infineon’s family of LDMOS integrated RF power amplifiers consists of two-stage 15 W, 30 W, 40 W and 45 W internally-matched single-chip ICs covering all typical cellular base station modulation formats from 700 MHz to 2.2 GHz. Thermallyenhanced ceramic open-cavity and molded-plastic packages offer cool and reliable operation. Wide RF modulation bandwidths and low memory effects Operation from 700 MHz to 2.2 GHz High gain and broadband on-chip matching Excellent thermal stability RoHS-compliant Integrated ESD protection Reference circuits available Product Summary Product Operating P1dB Gain PAE POUT Frequency Typ Typ Typ Avg Test Signal qJC Package Type [ºC/W] [MHz] [W] [dB] [%] [W] PTMA080152M 700–1000 20 30 34 8 GSM/EDGE 8.5/2.5 PG-DSO-20-63 PTMA080302M 700–1000 30 31 36 15 GSM/EDGE 6.7/1.7 PG-DSO-20-63 PTMA080304M 700–1000 2x15 30 33 8 GSM/EDGE 8.5/2.5 PG-DSO-20-63 PTMA180402EL 1800–2000 40 30 14 4 CDMA 3.5/1.1 H-33265-8 PTMA180402FL 1800–2000 40 30 14 4 CDMA 3.5/1.1 H-34265-8 PTMA180402M 1800–2000 40 30 16 5 CDMA 3.6/1.5 PG-DSO-20-63 PTMA210152M 1800–2000 20 28.5 33 7 WCDMA 10.7/2.9 PG-DSO-20-63 PTMA210452EL 1900–2200 45 28 10.5 3.2 WCDMA 3.5/1.3 H-33265-8 PTMA210452FL 1900–2200 45 28 10.5 3.2 WCDMA 3.5/1.3 H-34265-8 Note: Typical supply voltage is at 28 V [ www.infineon.com/rfpower] Product Brief Integrated RF Power Amplifiers 700 MHz to 2200 MHz Available Packages Broadband Performance Broadband Performance Fixture tuned for 2110 – 2170 MHz 22 -10 18 -15 14 -20 Return Loss 10 1700 1800 1900 2000 2100 -25 2200 28 Gain (dB) -5 10 Gain 24 0 20 -10 Return Loss Return Loss (dB) 0 Gain 26 20 32 Return Loss (dB) 30 Gain (dB) VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, 5 34 Molded Plastic Broadband Performance VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, Fixture tuned for 1930 – 1990 MHz -20 16 12 1500 1700 1900 2100 2300 PG-DSO-20-63 Open Cavity -30 2500 Frequency (MHz) Frequency (MHz) H-33265-8 PTMA210152M PTMA180402M PTMA080304M Features Dual (2x15 W) Integrated Amplifiers Typical channel isolation = 20 dB H-34265-8 Typical CW single channel performance, 960 MHz, 28 V V DD -1A 1 20 V DD -2A RF OUT -A V DD -1A 2 19 V DD -2A RF OUT -A RF 3 18 V DD -2A RF OUT -A IN-A –– POUT = 20 W –– Efficiency = 50% Typical GSM / EDGE performance of each channel, 960 MHz, 28 V –– Average output power = 8 W V G -1A 4 17 NC V G -2A 5 16 NC V DD -1B 6 15 NC –– EVM = 1.91% V DD -1B 7 14 NC –– ACPR @ 400 KHz = –63 dBc RF IN-B 8 13 V DD -2B RF OUT -B V G -1B 9 12 V DD -2B RF OUT -B V G -2B 10 11 V DD -2B RF a080304 m - v 1_pd _ 04- 20- 2010 –– Gain = 30 dB –– Efficiency = 33% –– ACPR @ 600 KHz = –76 dBc OUT -B Capable of handling 10:1 VSWR @ 28 V, 15 W (CW) output power Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F RoHS-compliant Source:Plated copper heatslug on backside of package Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2012 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B154-H9241-G2-X-7600 Date: 02 / 2012 ATTENTION PLEASE! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. INFORMATION For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). WARNINGS Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.