TISP4SxxxBJ

*R
oH
S
CO
M
PL
IA
N
T
The Model TISP4SxxxBJ Series is
obsolete and not recommended for
new designs. The Model TISP4xxxBJ Series is the recommended replacement
product.
TISP4SxxxL1BJ,
TISP4SxxxM1BJ,
TISP4SxxxM3BJ,
TISP4SxxxT3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4SxxxBJ Overvoltage Protector Series
TISP4SxxxBJ Overview
These protection devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or
lightning flash disturbances which are induced or conducted onto the telephone line. A single device provides 2-point protection and is
typically used for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems).
Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state. This low-voltage on-state causes
the current resulting from the overvoltage to be safely diverted within rated limits through the device. The high crowbar holding current helps
prevent d.c. latchup as the diverted current subsides.
E
T
E
L
O
S
B
O
Summary Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Part Number
VDRM
(V)
TISP4S040L1BJR-S
Max. VBO
@ 100 V/µs
(V)
±25
± 40
Min. IH
di/dt =
1 A/ms
(mA)
On-State
Voltage
VT @ IT =
2.2 A
(V)
Typ. Cj
@1 V,
1 MHz
(pF)
Max. IBO
(mA)
Max. IT
(A)
Off-State
Current
ID @ VDRM
(µA)
50
800
2.2
±5.0
±5.0
100
TISP4S040M1BJR-S
±25
± 40
50
800
2.2
±5.0
±5.0
120
TISP4S077M3BJR-S
±58
± 77
150
800
2.2
±5.0
±5.0
75
TISP4S088M3BJR-S
±65
± 88
150
800
2.2
±5.0
±5.0
75
TISP4S098M3BJR-S
±75
± 98
150
800
2.2
±5.0
±5.0
75
TISP4S160M3BJR-S
±120
± 160
150
800
2.2
±5.0
±5.0
55
TISP4S180M3BJR-S
±140
± 180
150
800
2.2
±5.0
±5.0
55
TISP4S240M3BJR-S
±180
± 240
150
800
2.2
±5.0
±5.0
45
TISP4S260M3BJR-S
±190
± 260
150
800
2.2
±5.0
±5.0
45
TISP4S300M3BJR-S
±220
± 300
150
800
2.2
±5.0
±5.0
45
TISP4S350M3BJR-S
±275
± 350
150
800
2.2
±5.0
±5.0
45
TISP4S350T3BJR-S
±275
± 350
150
800
2.2
±5.0
±5.0
45
TISP4S400M3BJR-S
±300
± 400
150
800
2.2
±5.0
±5.0
45
SMBJ Package (Top View)
Device Symbol
T
R(B) 1
2
T(A)
MDXXBG
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
........................................................................... UL Pending
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4SxxxBJ Overvoltage Protector Series
How to Order
Device
TISP4SxxxyzBJ
Package
BJ (J-Bend DO-214AA/SMB)
Carrier
Order As
Embossed Tape Reeled
TISP4SxxxyzBJR-S
Insert xxx value corresponding to protection voltages.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Parameter
Repetitive peak off-state voltage
Symbol
TISP4S040L1BJR-S
TISP4S040M1BJR-S
TISP4S077M3BJR-S
TISP4S088M3BJR-S
TISP4S098M3BJR-S
TISP4S160M3BJR-S
TISP4S180M3BJR-S
TISP4S240M3BJR-S
TISP4S260M3BJR-S
TISP4S300M3BJR-S
TISP4S350M3BJR-S
TISP4S350T3BJR-S
TISP4S400M3BJR-S
Storage Temperature
Unit
± 25
± 25
± 58
± 65
± 75
± 120
± 140
± 180
± 190
± 220
± 275
± 275
± 300
V
E
T
E
L
O
S
B
O
VDRM
Non-repetitive peak on-state pulse current
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
TISP4SxxxLyBJR-S
TISP4SxxxMyBJR-S
TISP4SxxxT3BJR-S
Operating Temperature
Value
ITSP
30
50
80
A
TJ
-40 to +150
°C
TSTG
-55 to +150
°C
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
RΘJA
Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C
Min.
Nom.
115
Max.
Unit
°C/W
JUNE 2012 - REVISED APRIL 2015
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4SxxxBJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
VDRM
-v
IDRM
ID
VD
ID
IDRM
VD
+v
VDRM
E
T
E
L
O
S
B
O
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
Typical Characteristics
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
1.20
1.4
1.15
1.2
Normalized Breakover Voltage
Normalized Holding Current
1.3
1.1
1.0
0.9
0.8
IH (TJ)
0.7
IH (TJ = 25 °C)
0.6
0.5
1.10
VBR (TJ)
VBR (TJ = 25 °C)
1.05
1.00
0.95
0.4
0.90
0.3
-50
-25
0
25
50
75
TJ, Junction Temperature (°C)
100
125
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
JUNE 2012 - REVISED APRIL 2015
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
150
175
TISP4SxxxBJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE
vs
REVERSE VOLTAGE
PEAK PULSE CURVE
CO (VR)
CO (VR = 1 V)
IPP - Peak Pulse Current - %IPP
Normalized Capacitance
1
TJ = 25 °C
f = 1 MHz
VRMS = 1 V
10
Test Waveform Example
tf = 10 µs
td = 1000 µs
tf
100
Peak Value
Half Value: IPP / 2 = td
50
E
T
E
L
O
S
B
O
e-t
0
0.1
10
1
100
0
1000
2000
3000
t - Time (µs)
VR, Reverse Voltage
Excludes TISP4S040x1BJ devices as these are only rated up to 25 V.
Device Symbolization Code
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
IDRM, Off-State Current (µA)
Device
10
VDRM = 50 V
1.0
0.1
0.01
0.001
-25
0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
Symbolization
Code
TISP4S040L1BJR-S
KBL
TISP4S040M1BJR-S
GBL
TISP4S077M3BJR-S
GCL
TISP4S088M3BJR-S
GDL
TISP4S098M3BJR-S
GEL
TISP4S160M3BJR-S
GGL
TISP4S180M3BJR-S
GHL
TISP4S240M3BJR-S
GIL
TISP4S260M3BJR-S
GJL
TISP4S300M3BJR-S
GKL
TISP4S350M3BJR-S
GLL
TISP4S350T3BJR-S
GYL
TISP4S400M3BJR-S
GML
Excludes TISP4S040x1BJ devices as these devices cannot be operated at 50 V.
JUNE 2012 - REVISED APRIL 2015
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4SxxxBJ Overvoltage Protector Series
Typical Applications
MODEM
TIP
WIRE
RING
FUSE
R1a
RING DETECTOR
Th3
HOOK SWITCH
TISP4350
PROTECTED
EQUIPMENT
Th1
D.C. SINK
E.G. LINE CARD
Th2
SIGNAL
TIP
AI6XBMA
R1b
RING
WIRE
AI6XBK
Modem In ter-wire Protection
Protection Module
E
T
E
L
O
S
B
O
R1a
Th3
SIGNAL
Th1
Th2
R1b
AI6XBL
D.C.
ISDN Protection
OVERCURRENT
PROTECTION
TIP
WIRE
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
S3a
R1a
Th3
SLIC
PROTECTION
Th4
S2a
S1a
SLIC
Th1
Th2
RING
WIRE
Th5
R1b
S3b
S1b
S2b
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
C1
220 nF
TEST
EQUIPMENT
RING
GENERATOR
Line Card Ring/Test Protection
JUNE 2012 - REVISED APRIL 2015
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
VBAT
AI6XBJ
TISP4SxxxBJ Overvoltage Protector Series
Package Outline Dimensions
This surface mount two terminal package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The
compound is designed to withstand normal soldering temperatures with no deformation and circuit performance characteristics will remain
stable when operated in most high humidity conditions. Terminals require no additional cleaning or processing when used in soldered
assembly.
SMB (DO-214AA) Package
4.06 - 4.57
(0.160 - 0.180)
0.152 - 0.305
(0.006 - 0.012)
1.95 - 2.20
(0.077 - 0.086)
3.30 - 3.94
(0.130 - 0.155)
2.13 - 2.44
(0.084 - 0.096)
E
T
E
L
O
S
B
O
0.203
MAX.
(0.008)
0.76 - 1.52
(0.030 - 0.060)
5.21 - 5.59
(0.220 - 0.205)
DIMENSIONS ARE : MILLIMETERS
(INCHES)
Recommended Printed Wiring Land Pattern Dimensions
SMB (DO-214AA) Land Pattern
2.54
(.100)
2.40
(0.095)
2.16
(0.085)
JUNE 2012 - REVISED APRIL 2015
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4SxxxBJ Overvoltage Protector Series
Tape & Reel Dimensions
The product will be dispensed in tape and reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
Pin 1
Location
120 °
F
D2
W
B
D1 D
P
A
Trailer
.......
.......
End
C
Device
.......
.......
Leader
.......
.......
.......
.......
E
T
E
L
O
S
B
O
DIMENSIONS:
10 pitches (min.)
Symbol
Carrier Width
A
Carrier Length
B
Carrier Depth
C
Sprocket Hole
d
Reel Outside Diameter
D
Reel Inner Diameter
D1
Feed Hole Diameter
D2
Sprocket Hole Position
E
Punch Hole Position
F
Punch Hole Pitch
P
Sprocket Hole Pitch
P0
Embossment Center
P1
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
Quantity per Reel
MM
(INCHES)
10 pitches (min.)
Direction of Feed
Item
W1
Start
--
SMB (DO-214AA)
4.94 ± 0.10
(0.194 - 0.004)
5.57 ± 0.10
(0.210 ± 0.004)
2.36 ± 0.10
(0.093 ± 0.004)
1.55 ± 0.05
(0.061 ± 0.002)
330
(12.992)
50.0
MIN.
(1.969)
13.0 ± 0.20
(0.512 ± 0.008)
1.75 ± 0.10
(0.069 ± 0.004)
5.50 ± 0.05
(0.217 ± 0.002)
4.00 ± 0.10
(0.157 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
2.00 ± 0.05
(0.079 ± 0.002)
0.30 ± 0.10
(0.012 ± 0.004)
12.00 ± 0.20
(0.472 ± 0.008)
18.4
MAX.
(0.724)
3,000
Devices are packed in accordance with EIA 481
standard specifications shown here.
Asia-Pacific:
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
EMEA:
Tel: +36 88 520 390
Fax: +36 88 520 211
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
“TISP” is a registered trademark of Bourns Ltd., a Bourns Company, in the United States and other countries, except that “TISP” is a registered trademark of Bourns, Inc. in China.
“Bourns” is a registered trademark of Bourns, Inc. in the United States and other countries.
JUNE 2012 - REVISED APRIL 2015
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.