PANASONIC 2SC1359

Transistor
2SC1359
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA838
Unit: mm
■ Features
Optimum for RF amplification of FM/AM radios.
High transition frequency fT.
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.2
0.45 –0.1
1.27
1.27
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
+0.2
0.45 –0.1
2.3±0.2
●
13.5±0.5
●
4.0±0.2
5.1±0.2
5.0±0.2
ICBO
*
Conditions
min
typ
VCB = 10V, IE = 0
max
Unit
0.1
µA
Forward current transfer ratio
hFE
VCB = 10V, IE = –1mA
70
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz
150
Noise figure
NF
VCB = 10V, IE = –1mA, f = 5MHz
2.8
4
dB
Reverse transfer impedance
Zrb
VCB = 10V, IE = –1mA, f = 2MHz
22
50
Ω
Common emitter reverse transfer capacitance
Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
0.9
1.5
pF
*h
FE
220
250
MHz
Rank classification
Rank
B
C
hFE
70 ~ 140
110 ~ 220
1
Transistor
2SC1359
PC — Ta
IC — VCE
IC — I B
12
15.0
Ta=25˚C
450
300
250
200
150
100
80µA
8
60µA
6
4
40µA
2
20µA
20
40
60
80 100 120 140 160
5.0
0
0
Ambient temperature Ta (˚C)
6
12
18
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
50
Collector current IC (mA)
100
80
60
40
20
25˚C
40
Ta=75˚C
–25˚C
30
20
10
0
0
0.4
0.6
0.8
1.0
0
Base to emitter voltage VBE (V)
0.4
0.8
1.2
hFE — IC
1.6
2.0
25˚C
–25˚C
80
40
Ta=25˚C
VCB=10V
6V
300
250
200
150
100
50
0.3
1
3
10
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3
30
Collector current IC (mA)
100
1
3
0
– 0.1 – 0.3
–1
–3
10
30
100
Zrb — IE
–10
–30
Emitter current IE (mA)
–100
Reverse transfer impedance Zrb (Ω)
Transition frequency fT (MHz)
Ta=75˚C
120
0
0.1
IC/IB=10
60
VCE=10V
160
100
30
fT — I E
350
80
Collector current IC (mA)
400
200
60
100
Base to emitter voltage VBE (V)
240
40
VCE(sat) — IC
60
VCE=10V
Ta=25˚C
0.2
20
Base current IB (µA)
IC — VBE
120
0
0
Collector to emitter voltage VCE (V)
IB — VBE
Base current IB (mA)
7.5
2.5
0
0
Forward current transfer ratio hFE
10.0
50
0
2
12.5
Collector current IC (mA)
350
VCE=10V
Ta=25˚C
IB=100µA
10
400
Collector current IC (mA)
Collector power dissipation PC (mW)
500
VCB=10V
f=2MHz
Ta=25˚C
50
40
30
20
10
0
– 0.1
– 0.3
–1
–3
Emitter current IE (mA)
–10
Transistor
2SC1359
PG — IE
24
20
2.0
IC=3mA
1mA
1.5
1.0
16
12
8
0.5
6
4
1
3
10
30
2
0
– 0.1 – 0.3
100
–1
–3
–10
–30
Emitter current IE (mA)
bie — gie
20
Reverse transfer susceptance bre (mS)
0
yie=gie+jbie
VCE=10V
f=10.7MHz
yre=gre+jbre
VCE=10V
–7mA
100
IE=–1mA
12
IE=–1mA
– 0.2
58
–2mA
– 0.3
8
58
– 0.4
f=10.7MHz
66
100
– 0.5
0
0
8
16
24
32
40
Input conductance gie (mS)
– 0.6
– 0.5
–1
–3
–10
bfe — gfe
– 0.1
16
– 0.3
Emitter current IE (mA)
bre — gre
24
–4mA
0
– 0.1
–100
0
Forward transfer susceptance bfe (mS)
0.3
Collector to emitter voltage VCE (V)
Input susceptance bie (mS)
8
4
0
0.1
VCB=6V
f=100MHz
Rg=50Ω
Ta=25˚C
10
Noise figure NF (dB)
2.5
NF — IE
12
f=100MHz
VCB=10V
Ta=25˚C
f=10.7MHz
Ta=25˚C
Power gain PG (dB)
Common emitter reverse transfer capacitance Cre (pF)
Cre — VCE
3.0
– 0.1mA
f=10.7MHz
58
10.7
–1mA 100
–20
58
–2mA
100
–40
IE=–4mA
–60
58
100
–80
–100
yfe=gfe+jbfe
VCE=10V
–120
– 0.4
– 0.3
– 0.2
– 0.1
10
Reverse transfer conductance gre (mS)
0
20
40
60
80
Forward transfer conductance
100
gfe (mS)
boe — goe
1.2
Output susceptance boe (mS)
yoe=goe+jboe
VCE=10V
1.0
0.8
IE=–1mA
100
0.6
58
0.4
0.2
f=10.7MHz
0
0
0.1
0.2
0.3
0.4
0.5
Output conductance goe (mS)
3