Transistors SMD Type NPN Transistors 2SC3930 ■ Features ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT. ● Complementary to 2SA1532 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 30 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage Unit V VEBO 5 Collector Current - Continuous IC 30 mA Collector Power Dissipation PC 150 mW TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 25V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Unit V uA Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1mA 1 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=1mA 1.2 DC current gain hFE VCE= 10V, IC= 1mA Noise figure NF VCB= 10V, IE= -1mA,f=5MHz Reverse transfer impedance Zrb VCB= 10V, IE= -1mA,f=2MHz 22 50 Ω Common emitter reverse transfer capacitance Cre VCE= 10V, IC= 1mA,f=10.7MHz 0.9 1.5 pF fT VCE= 10V, IE= -1mA,f=200MHz Transition frequency 70 220 2.8 150 V 250 4 dB MHz ■ Classification of hfe Type 2SC3930-B 2SC3930-C Range 70-140 110-220 Marking VB VC www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC3930 ■ Typical Characterisitics 160 120 80 40 40 60 60µA 6 4 40µA 2 20µA 0 80 100 120 140 160 80µA 0 6 IB — VBE 12 VCE=10V 50 Collector current IC (mA) Base current IB (µA) 100 80 60 40 20 0.8 –25˚C 20 0 1.0 Transition frequency fT (MHz) 200 Ta=75˚C 25˚C 120 –25˚C 80 40 0 0.1 0.3 1 3 10 30 Collector current IC (mA) www.kexin.com.cn 0 0.4 100 0.8 1.2 1.6 2.0 300 250 200 150 100 50 0 – 0.1 – 0.3 –1 –3 60 80 100 100 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Zrb — IE 60 VCB=10V f=100MHz Ta=25˚C 350 40 Collector current IC (mA) fT — I E 400 VCE=10V 160 20 Base current IB (µA) Base to emitter voltage VBE (V) hFE — IC 240 Forward current transfer ratio hFE Ta=75˚C 30 Base to emitter voltage VBE (V) 2 25˚C 40 10 0.6 0 VCE(sat) — IC VCE=10V Ta=25˚C 0.4 0 18 60 0.2 5.0 IC — VBE 120 0 7.5 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 0 10.0 2.5 Collector to emitter saturation voltage VCE(sat) (V) 20 12.5 Reverse transfer impedance Zrb (Ω) 0 VCE=10V Ta=25˚C IB=100µA 8 IC — I B 15.0 Ta=25˚C 10 Collector current IC (mA) Collector power dissipation PC (mW) 200 0 IC — VCE 12 Collector current IC (mA) PC — Ta 240 VCB=10V f=2MHz Ta=25˚C 50 40 30 20 10 0 – 0.1 – 0.3 –1 –3 Emitter current IE (mA) –10 Transistors SMD Type NPN Transistors 2SC3930 ■ Typical Characterisitics PG — IE 24 20 2.0 IC=3mA 1mA 1.5 1.0 16 12 8 0.5 1 3 10 30 –1 –3 –10 –7mA 16 –2mA 100 – 0.1 0 8 0 IE=–1mA 58 – 0.4 100 – 0.5 f=10.7MHz 16 24 32 40 Input conductance gie (mS) – 0.6 – 0.5 –1 –3 –10 bfe — gfe – 0.3 8 4 – 0.3 Emitter current IE (mA) f=10.7MHz yre=gre+jbre VCE=10V – 0.2 58 IE=–1mA 12 Reverse transfer susceptance bre (mS) Vie=gie+jbie VCE=10V –4mA 0 – 0.1 –100 bre — gre 0 20 –30 Emitter current IE (mA) bie — gie Input susceptance bie (mS) 4 2 0 – 0.1 – 0.3 100 24 f=10.7MHz 58 – 0.1mA 10.7 –1mA 100 –20 58 –2mA –40 100 IE=–4mA –60 58 100 –80 –100 – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) –120 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe 1.2 Output susceptance boe (mS) 6 Forward transfer susceptance bfe (mS) 0.3 Collector to emitter voltage VCE (V) 0 8 4 0 0.1 VCB=6V f=100MHz Rg=50Ω Ta=25˚C 10 Noise figure NF (dB) 2.5 NF — IE 12 VCE=10V f=100MHz Ta=25˚C f=10.7MHz Ta=25˚C Power gain PG (dB) Common emitter reverse transfer capacitance Cre (pF) Cre — VCE 3.0 yoe=goe+jboe VCE=10V 1.0 IE=–1mA 100 0.8 0.6 58 0.4 0.2 0 f=10.7MHz 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) www.kexin.com.cn 3