BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) E T E L O S B O Collector-emitter voltage (IB = 0) (see Note 1) BD545B V CBO 60 80 BD545C 100 BD545 40 BD545A BD545B UNIT 40 BD545 BD545A VALUE VCEO BD545C 60 80 V V 100 VEBO 5 IC 15 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 85 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Operating free air temperature range TA -65 to +150 °C °C Emitter-base voltage Continuous collector current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds V Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 4) BD545 40 BD545A 60 BD545B 80 BD545C 100 TYP MAX V VCE = 40 V VBE = 0 BD545 0.4 Collector-emitter VCE = 60 V VBE = 0 BD545A 0.4 cut-off current VCE = 80 V VBE = 0 BD545B 0.4 VCE = 100 V VBE = 0 BD545C 0.4 Collector cut-off VCE = 30 V IB = 0 BD545/545A 0.7 current VCE = 60 V IB = 0 BD545B/545C 0.7 VEB = 5V IC = 0 Emitter cut-off current Forward current transfer ratio 1 VCE = 4V IC = 1A VCE = 4V IC = 5A VCE = 4V IC = 10 A Collector-emitter IB = 625 mA IC = saturation voltage IB = IC = 10 A Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 2A mA mA mA 60 (see Notes 4 and 5) 25 10 5A 0.8 (see Notes 4 and 5) 1 E T E L O S B O VCE = UNIT 4V IC = 10 A (see Notes 4 and 5) VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 1.8 V V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.47 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 6 A IB(on) = 0.6 A IB(off) = -0.6 A toff Turn-off time VBE(off) = -4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.6 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS633AJ VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1·0 0·1 TCS633AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = IC = IC = IC = 1·0 0·1 E T E L O S B O 1·0 0·01 0·01 10 1A 3A 6A 10 A IC - Collector Current - A 0·1 1·0 10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·8 TCS633AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 1·6 1·4 1·2 1·0 0·8 0·6 0·1 1 10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS633AE 10 1·0 0·1 BD545 BD545A BD545B BD545C E T E L O S B O 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AC Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.