BU426, BU426A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 900 Volt Blocking Capability SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BU426 Collector-base voltage (IE = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 50°C case temperature Operating junction temperature range Storage temperature range NOTE BU426A V CBO E T E L O S B O Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) SYMBOL BU426 BU426A BU426 BU426A VCES VCEO VALUE 800 900 800 900 375 400 UNIT V V V IC 6 A ICM 10 A IB +2, -0.1 A IBM ±3 A Ptot 70 W Tj -65 to +150 °C Tstg -65 to +150 °C 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) Collector-emitter sustaining voltage TEST CONDITIONS IC = 100 mA L = 25 mH MIN (see Note 2) BU426 375 BU426A 400 TYP MAX V VCE = 800 V VBE = 0 BU426 1 Collector-emitter VCE = 900 V VBE = 0 BU426A 1 cut-off current VCE = 800 V VBE = 0 TC = 125°C BU426 2 VCE = 900 V VBE = 0 TC = 125°C BU426A 2 VEB = 10 V IC = 0 VCE = 5V IC = 0.6 A IC = 2.5 A Emitter cut-off current Forward current transfer ratio Collector-emitter IB = 0.5 A saturation voltage IB = 1.25 A Base-emitter IB = 0.5 A saturation voltage IB = 1.25 A IC = 10 4A IC = 2.5 A IC = 4A (see Notes 3 and 4) UNIT 30 mA mA 60 1.5 (see Notes 3 and 4) 3 1.4 (see Notes 3 and 4) 1.6 V V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics E T E L O S B O PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.1 °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ton Turn on time ts Storage time tf Fall time tf † Fall time TEST CONDITIONS † IC = 2.5 A IB(on) = 0.5 A VCC = 250 V (see Figures 1 and 2) IC = 2.5 A IB(on) = 0.5 A VCC = 250 V TC = 95°C MIN IB(off) = -1 A IB(off) = -1 A MAX 0.3 0.6 µs 2 3.5 µs 0.15 0.2 UNIT µs 0.75 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU426, BU426A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µF 120 Ω T V1 100 Ω 100 µF 47 Ω tp V cc = 250 V TUT 15 Ω V1 100 Ω 680 µF 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit E T E L O S B O C 90% 90% E IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = t off B 10% 10% 90% D F 0% dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BU426, BU426A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP741AF 100 hFE - Typical DC Current Gain VCE = 1.5 V VCE = 5 V 10 TCP741AG 7 TC = 25°C 6 IC = IC = IC = IC = 5 4 2 1 0 1·0 10 0 0·5 IC - Collector Current - A IC = IC = IC = IC = 5 4 4 3 2 1 A A A A 3 2 1 0 TCP741AI 1·2 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V 2·0 BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP741AH TC = 100°C 6 1·5 Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 7 1·0 IB - Base Current - A Figure 3. TC = 25°C 1·1 1·0 0·9 0·8 IC = IC = IC = IC = 0·7 4 3 2 1 A A A A 0·6 0 0·5 1·0 IB - Base Current - A Figure 5. 1·5 2·0 0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6 IB - Base Current - A Figure 6. 4 A A A A 3 E T E L O S B O 1·0 0·1 4 3 2 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU426, BU426A NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP741AA 10 1·0 0.1 tp = 0.2 µs tp = 0.5 µs tp = 1 µs tp = 2 µs 6 µs E T E L O S B O tp = 20 µs tp = DC Operation 0·01 1·0 BU426 BU426A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5