TIP47, TIP48, TIP49, TIP50

TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
40 W at 25°C Case Temperature
1 A Continuous Collector Current
TO-220 PACKAGE
(TOP VIEW)
2 A Peak Collector Current
20 mJ Reverse-Energy Rating
This series is obsolete and
not recommended for new designs.
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
TIP47
Collector-base voltage (IE = 0)
TIP48
V CBO
TIP50
TIP47
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
TIP48
TIP49
TIP50
VCEO
VEBO
IC
Peak collector current (see Note 1)
ICM
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
Continuous base current
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTE
1:
2.
3.
4.
UNIT
350
E
T
E
L
O
S
B
O
TIP49
VALUE
400
450
500
250
300
350
400
5
1
2
IB
0.6
Ptot
2
½LIC2
V
V
A
A
A
40
W
20
mJ
Tj
-65 to +150
TL
260
Tstg
V
-65 to +150
W
°C
°C
°C
This value applies for tp ≤ 1 ms, duty cycle ≤ 2%.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC =
30 mA
MIN
IB = 0
(see Note 5)
TIP47
250
TIP48
300
TIP49
350
TIP50
400
TYP
MAX
UNIT
V
VCE = 350 V
VBE = 0
TIP47
1
Collector-emitter
VCE = 400 V
VBE = 0
TIP48
1
cut-off current
VCE = 450 V
VBE = 0
TIP49
1
mA
VCE = 500 V
VBE = 0
TIP50
1
VCE = 150 V
IB = 0
TIP47
1
Collector cut-off
VCE = 200 V
IB = 0
TIP48
1
current
VCE = 250 V
IB = 0
TIP49
1
VCE = 300 V
IB = 0
TIP50
1
VEB =
5V
IC = 0
Forward current
VCE =
10 V
IC = 0.3 A
transfer ratio
VCE =
10 V
IC =
1A
IB =
0.2 A
IC =
1A
(see Notes 5 and 6)
1
V
VCE =
10 V
IC =
1A
(see Notes 5 and 6)
1.5
V
VCE =
10 V
IC = 0.2 A
f = 1 kHz
25
VCE =
10 V
IC = 0.2 A
f = 2 MHz
5
MAX
UNIT
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
1
(see Notes 5 and 6)
30
mA
mA
150
10
E
T
E
L
O
S
B
O
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
ton
Turn on time
toff
Turn off time
TEST CONDITIONS
†
MIN
IC = 1 A
IB(on) = 0.1 A
IB(off) = -0.1 A
VBE(off) = -5 V
RL = 200 Ω
(see Figures 1 and 2)
0.2
µs
2
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µF
120 Ω
T
V1
100 Ω
100 µF
47 Ω
tp
V cc V=CC250 V
TUT
15 Ω
V1
100 Ω
680 µF
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
E
T
E
L
O
S
B
O
C
90%
90%
E
IC
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = t off
B
10%
10%
90%
D
F
0%
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
40
TCP770AA
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - Typical DC Current Gain
50
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
30
20
10
0
0.01
0·3
TCP770AB
IC / IB = 5
= 25°C
TC
tp
= 300 µs, duty cycle < 2%
0·2
0·1
E
T
E
L
O
S
B
O
0.1
0
0·01
1
IC - Collector Current - A
0·1
1
IC - Collector Current - A
Figure 3.
Figure 4.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
VBE(sat) - Base-Emitter Saturation Voltage - V
1.0
0.9
TCP770AC
VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0·01
0·1
1·0
IC - Collector Current - A
Figure 5.
4
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAP770AA
1·0
0.1
tp = 100 µs
TIP47
TIP48
TIP49
TIP50
tp = 500 µs
1 ms
tp =
DC Operation
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 6.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5