POINN TIP47

TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
●
40 W at 25°C Case Temperature
●
1 A Continuous Collector Current
●
2 A Peak Collector Current
●
20 mJ Reverse-Energy Rating
DECEMBER 1971 - REVISED MARCH 1997
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
TIP47
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
TIP48
TIP49
VCBO
450
500
250
TIP49
VCEO
TIP50
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
1:
2.
3.
4.
400
TIP50
TIP48
UNIT
350
TIP47
Emitter-base voltage
NOTE
VALUE
300
350
V
V
400
V EBO
5
V
IC
1
A
ICM
2
A
IB
0.6
A
Ptot
40
W
Ptot
2
W
½LIC 2
20
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
This value applies for tp ≤ 1 ms, duty cycle ≤ 2%.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V (BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
TEST CONDITIONS
Collector-emitter
breakdown voltage
IC =
30 mA
MIN
IB = 0
(see Note 5)
TIP47
250
TIP48
300
TIP49
350
TIP50
400
TYP
MAX
UNIT
V
VCE = 350 V
VBE = 0
TIP47
1
Collector-emitter
V CE = 400 V
V BE = 0
TIP48
1
cut-off current
V CE = 450 V
V BE = 0
TIP49
1
V CE = 500 V
V BE = 0
TIP50
1
VCE = 150 V
IB = 0
TIP47
1
Collector cut-off
V CE = 200 V
IB = 0
TIP48
1
current
V CE = 250 V
IB = 0
TIP49
1
V CE = 300 V
IB = 0
TIP50
1
VEB =
5V
IC = 0
Forward current
VCE =
10 V
IC = 0.3 A
transfer ratio
V CE =
10 V
IC =
1A
IB =
0.2 A
IC =
1A
(see Notes 5 and 6)
1
V
VCE =
10 V
IC =
1A
(see Notes 5 and 6)
1.5
V
VCE =
10 V
IC = 0.2 A
f = 1 kHz
25
VCE =
10 V
IC = 0.2 A
f = 2 MHz
5
MAX
UNIT
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
1
(see Notes 5 and 6)
30
mA
mA
mA
150
10
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
†
MIN
ton
Turn on time
IC = 1 A
IB(on) = 0.1 A
IB(off) = -0.1 A
toff
Turn off time
V BE(off) = -5 V
RL = 200 Ω
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
TYP
0.2
µs
2
µs
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
DECEMBER 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µ F
120 Ω
T
V1
100 Ω
100 µ F
47 Ω
tp
V cc V=CC250 V
TUT
15 Ω
V1
100 Ω
680 µ F
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
C
90%
90%
E
IC
A - B = td
B - C = tr
B
E - F = tf
10%
10%
F
0%
D - E = ts
A - C = ton
D - F = toff
90%
D
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
PRODUCT
INFORMATION
3
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
DECEMBER 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
40
TCP770AA
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - Typical DC Current Gain
50
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
30
20
10
0
0.01
0.1
0·3
TCP770AB
IC / IB = 5
TC
= 25°C
tp
= 300 µs, duty cycle < 2%
0·2
0·1
0
0·01
1
IC - Collector Current - A
0·1
IC - Collector Current - A
Figure 3.
Figure 4.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
VBE(sat) - Base-Emitter Saturation Voltage - V
1.0
0.9
TCP770AC
VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0·01
0·1
IC - Collector Current - A
Figure 5.
PRODUCT
4
INFORMATION
1·0
1
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
DECEMBER 1971 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAP770AA
1·0
0.1
tp = 100 µ s
TIP47
TIP48
TIP49
TIP50
tp = 500 µ s
tp =
1 ms
DC Operation
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 6.
PRODUCT
INFORMATION
5
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
DECEMBER 1971 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
6
INFORMATION
MDXXBE
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
DECEMBER 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
7