BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE BUV47 BUV47A BUV47 VCEX VCER E T E L O S B O Peak collector current (see Note 1) Continuous base current SYMBOL BUV47A BUV47 BUV47A VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V IC 9 ICM 15 A IB 3 A A IBM 6 A Ptot 120 W Tj -65 to +150 °C Tstg -65 to +150 °C 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) V(BR)EBO ICES ICER IEBO VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage Base-emitter breakdown voltage TEST CONDITIONS MIN IC = 200 mA L = 25 mH (see Note 2) IE = IC = 0 (see Note 3) 50 mA BUV47 400 BUV47A 450 TYP MAX V 7 30 VCE = 850 V VBE = 0 BUV47 0.15 Collector-emitter VCE = 1000 V VBE = 0 BUV47A 0.15 cut-off current VCE = 850 V VBE = 0 TC = 125°C BUV47 1.5 TC = 125°C BUV47A 1.5 BUV47 0.4 VCE = 1000 V VBE = 0 VCE = 850 V RBE = 10 Ω Collector-emitter VCE = 1000 V RBE = 10 Ω BUV47A 0.4 cut-off current VCE = 850 V RBE = 10 Ω TC = 125°C BUV47 3.0 VCE = 1000 V RBE = 10 Ω TC = 125°C BUV47A 3.0 VEB = 5V IC = 0 Emitter cut-off current 1 Collector-emitter IB = 1A IC = 5A saturation voltage IB = 2.5 A IC = 8A IB = 1A IC = 5A VCE = 10 V IC = 0.5 A VCB = 20 V IC = 0 Base-emitter saturation voltage Current gain bandwidth product Output capacitance 1.5 (see Notes 3 and 4) 3.0 (see Notes 3 and 4) E T E L O S B O f= 1 MHz f = 0.1 MHz UNIT 1.6 V mA mA mA V V 8 MHz 105 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † ton Turn on time ts Storage time tf Fall time TEST CONDITIONS † IC = 5 A IB(on) = 1 A VCC = 150 V (see Figures 1 and 2) MIN TYP IB(off) = -1 A 1.0 µs 3.0 µs 0.8 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † tsv Voltage storage time IC = 5 A IB(on) = 1 A tfi Current fall time TC = 100°C (see Figures 3 and 4) MIN VBE(off) = -5 V 2 TYP MAX UNIT 4.0 µs 0.4 µs AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV47, BUV47A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µF 120 Ω T V1 100 Ω 100 µF 47 Ω tp V cc V=CC250 V TUT 15 Ω V1 100 Ω 680 µF 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit E T E L O S B O C 90% 90% E IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = t off B 10% 10% 90% D F 0% dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUV47, BUV47A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V E T E L O S B O 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 3. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv B - C = trv D - E = tfi E - F = tti Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveforms 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV47, BUV47A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP762AA 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 TCP762AB 5·0 TC = 25°C IC = 8 A IC = 6 A IC = 4 A IC = 2 A 4·0 3·0 2·0 1·0 E T E L O S B O 1·0 0·1 0 1·0 10 0 0·5 1·0 IC - Collector Current - A 0·3 0·2 0·1 0 0·5 1·0 1·5 2·0 IB - Base Current - A Figure 7. 2·5 TCP762AC 10 ICES - Collector Cut-off Current - µA VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP762AK TC = 100°C IC = 8 A IC = 6 A IC = 4 A IC = 2 A 0 2·5 Figure 6. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 0·4 2·0 IB - Base Current - A Figure 5. 0·5 1·5 1·0 BUV47A VCE = 1000 V 0·1 BUV47 VCE = 850 V 0·01 0·001 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 8. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 BUV47, BUV47A NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP762AA 10 1·0 0.1 tp = 100 µs 1 ms tp = tp = 10 ms DC Operation E T E L O S B O 0·01 1·0 BUV47 BUV47A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 9. ZθJC / RθJC - Normalised Transient Thermal Impedance THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION TCP762AD 1·0 50% 20% 0·1 10% 5% 2% 1% 0·01 0% 0·001 10-5 t1 duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = PD(peak) · 10-4 10-3 t2 ( ) ZθJC RθJC 10-2 · R θJC(max) 10-1 t1 - Power Pulse Duration -s Figure 10. 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.