TIPP110, TIPP111, TIPP112

TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
●
20 W Pulsed Power Dissipation
●
100 V Capability
●
2 A Continuous Collector Current
●
4 A Peak Collector Current
LP PACKAGE
(TOP VIEW)
E
1
2
3
C
B
MDTRAB
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
TIPP110
Collector-base voltage (IE = 0)
TIPP111
80
V
100
E
T
E
L
O
S
B
O
TIPP110
TIPP111
UNIT
60
V CBO
TIPP112
Collector-emitter voltage (IB = 0)
VALUE
VCEO
TIPP112
60
80
V
100
VEBO
5
V
IC
2
A
ICM
4
A
IB
50
mA
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
0.8
W
Pulsed power dissipation (see Note 3)
PT
20
W
Operating junction temperature range
Tj
-55 to +150
°C
Tstg
-55 to +150
°C
TL
260
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. V CE = 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE
VEC
Collector-emitter
breakdown voltage
TEST CONDITIONS
MIN
TIPP110
IC = 10 mA
IB = 0
(see Note 4)
TYP
MAX
TIPP111
80
TIPP112
100
V
VCE = 30 V
VBE = 0
TIPP110
2
VCE = 40 V
VBE = 0
TIPP111
2
VCE = 50 V
VBE = 0
TIPP112
2
VCE = 60 V
IB = 0
TIPP110
1
VCE = 80 V
IB = 0
TIPP111
1
VCE = 100 V
IB = 0
TIPP112
1
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC = 1 A
transfer ratio
VCE =
4V
IC = 2 A
8 mA
IC = 2 A
4V
IC = 2 A
Collector-emitter
cut-off current
Collector-base
cut-off current
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IB =
VCE =
4A
IB = 0
mA
mA
2
mA
(see Notes 4 and 5)
2.5
V
(see Notes 4 and 5)
2.8
V
3.5
V
(see Notes 4 and 5)
1000
500
E
T
E
L
O
S
B
O
IE =
UNIT
60
(see Notes 4 and 5)
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts and located
within 3.2 mm from device body.
2
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.