TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP140 Collector-base voltage (IE = 0) TIP141 V CBO Continuous collector current V 60 VCEO TIP142 Emitter-base voltage 80 100 TIP140 TIP141 UNIT 60 TIP142 Collector-emitter voltage (IB = 0) VALUE 80 V 100 VEBO 5 V IC 10 A ICM 15 A IB 0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W ½LIC2 100 mJ Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICEO ICBO IEBO hFE V CE(sat) VBE VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP140 IC = 30 mA IB = 0 (see Note 5) TYP MAX UNIT 60 TIP141 80 TIP142 100 V VCE = 30 V IB = 0 TIP140 2 VCE = 40 V IB = 0 TIP141 2 VCE = 50 V IB = 0 TIP142 2 VCB = 60 V IE = 0 TIP140 1 VCB = 80 V IE = 0 TIP141 1 VCB = 100 V IE = 0 TIP142 1 VEB = 5V IC = 0 Forward current VCE = 4V IC = transfer ratio VCE = 4V IC = 10 A Collector-emitter IB = 10 mA IC = 5 A saturation voltage IB = 40 mA IC = 10 A 4V IC = 10 A (see Notes 5 and 6) 3 V IB = 0 (see Notes 5 and 6) 3.5 V MAX UNIT Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Base-emitter voltage Parallel diode forward voltage VCE = IE = 10 A 2 5A (see Notes 5 and 6) mA mA mA 1000 500 2 (see Notes 5 and 6) 3 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN Turn-on time IC = 10 A IB(on) = 40 mA IB(off) = -40 mA 0.9 µs toff Turn-off time VBE(off) = -4.2 V RL = 3 Ω tp = 20 µs, dc ≤ 2% 11 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP ton DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS140AA 70000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 4 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS140AB 2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 0·5 20 TC = -40°C TC = 25°C TC = 100°C 0 0·5 1·0 IC - Collector Current - A 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS140AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 TC = -40°C TC = 25°C 2·5 TC = 100°C 2·0 1·5 1·0 0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0 0·5 1·0 10 20 IC - Collector Current - A Figure 3. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS140AA 10 1·0 TIP140 TIP141 TIP142 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.