BOURNS TIP142

TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
TIP145, TIP146 and TIP147
●
125 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
Minimum hFE of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
TIP140
Collector-base voltage (IE = 0)
TIP141
V CBO
Continuous collector current
V
60
VCEO
TIP142
Emitter-base voltage
80
100
TIP140
TIP141
UNIT
60
TIP142
Collector-emitter voltage (IB = 0)
VALUE
80
V
100
VEBO
5
V
IC
10
A
ICM
15
A
IB
0.5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
½LIC2
100
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
V CE(sat)
VBE
VEC
Collector-emitter
breakdown voltage
TEST CONDITIONS
MIN
TIP140
IC = 30 mA
IB = 0
(see Note 5)
TYP
MAX
UNIT
60
TIP141
80
TIP142
100
V
VCE = 30 V
IB = 0
TIP140
2
VCE = 40 V
IB = 0
TIP141
2
VCE = 50 V
IB = 0
TIP142
2
VCB = 60 V
IE = 0
TIP140
1
VCB = 80 V
IE = 0
TIP141
1
VCB = 100 V
IE = 0
TIP142
1
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC =
transfer ratio
VCE =
4V
IC = 10 A
Collector-emitter
IB =
10 mA
IC = 5 A
saturation voltage
IB =
40 mA
IC = 10 A
4V
IC = 10 A
(see Notes 5 and 6)
3
V
IB = 0
(see Notes 5 and 6)
3.5
V
MAX
UNIT
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Base-emitter
voltage
Parallel diode
forward voltage
VCE =
IE =
10 A
2
5A
(see Notes 5 and 6)
mA
mA
mA
1000
500
2
(see Notes 5 and 6)
3
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
Turn-on time
IC = 10 A
IB(on) = 40 mA
IB(off) = -40 mA
0.9
µs
toff
Turn-off time
VBE(off) = -4.2 V
RL = 3 Ω
tp = 20 µs, dc ≤ 2%
11
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
ton
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS140AA
70000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = 4 V
tp = 300 µs, duty cycle < 2%
100
0·5
1·0
10
TCS140AB
2·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
0·5
20
TC = -40°C
TC = 25°C
TC = 100°C
0
0·5
1·0
IC - Collector Current - A
10
20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS140AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
0·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0
0·5
1·0
10
20
IC - Collector Current - A
Figure 3.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS140AA
10
1·0
TIP140
TIP141
TIP142
0·1
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS140AA
Ptot - Maximum Power Dissipation - W
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.