TIPP31, TIPP31A, TIPP31B, TIPP31C

TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
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20 W Pulsed Power Dissipation
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100 V Capability
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2 A Continuous Collector Current
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4 A Peak Collector Current
C
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Customer-Specified Selections Available
B
LP PACKAGE
(TOP VIEW)
E
1
2
3
MDTRAB
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
E
T
E
L
O
S
B
O
TIPP31B
V CBO
60
80
TIPP31C
100
TIPP31
40
TIPP31A
TIPP31B
UNIT
40
TIPP31
TIPP31A
VALUE
VCEO
TIPP31C
60
80
V
V
100
VEBO
5
V
IC
2
A
ICM
4
A
IB
1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
0.8
W
Pulsed power dissipation (see Note 3)
PT
20
W
Operating junction temperature range
Tj
-55 to +150
°C
Tstg
-55 to +150
°C
TL
260
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C.
3. V CE = 20 V, IC = 1 A, tp = 10 ms, duty cycle ≤ 2%.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC =
5 mA
IB = 0
(see Note 4)
MIN
TIPP31
40
TIPP31A
60
TIPP31B
80
TIPP31C
100
TYP
MAX
V
VCE = 40 V
VBE = 0
TIPP31
0.2
Collector-emitter
VCE = 60 V
VBE = 0
TIPP31A
0.2
cut-off current
VCE = 80 V
VBE = 0
TIPP31B
0.2
VCE = 100 V
VBE = 0
TIPP31C
0.2
Collector cut-off
VCE = 30 V
IB = 0
TIPP31/31A
0.3
current
VCE = 60 V
IB = 0
TIPP31B/31C
0.3
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC =
1A
transfer ratio
VCE =
4V
IC =
2A
IB = 375 mA
IC =
2A
VCE =
IC =
2A
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
4V
UNIT
mA
mA
1
mA
(see Notes 4 and 5)
1
V
(see Notes 4 and 5)
1.5
V
(see Notes 4 and 5)
20
10
E
T
E
L
O
S
B
O
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
2
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.