TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to TIP32/TIP32A/TIP32B/TIP32C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 : TIP31A : TIP31B : TIP31C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage : TIP31 : TIP31A : TIP31B : TIP31C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 5 A IB Base Current 1 A PC Collector Dissipation (TC=25°C) 40 W Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C © 2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A www.fairchildsemi.com 1 TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor July 2008 Symbol VCEO(sus) ICEO ICES Parameter * Collector-Emitter Sustaining Voltage : TIP31 : TIP31A : TIP31B : TIP31C Collector Cut-off Current : TIP31/31A : TIP31B/31C Test Condition IC = 30mA, IB = 0 Min. Max. 40 60 80 100 Units V V V V VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.3 0.3 mA mA VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 200 200 200 200 μA μA μA μA 1 mA Collector Cut-off Current : TIP31 : TIP31A : TIP31B : TIP31C IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE * DC Current Gain VCE = 4V, IC = 1A VCE = 4V, IC = 3A 25 10 50 VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 3A 1.8 V fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA, f = 1MHz 3.0 MHz * Pulse Test: PW≤300ms, Duty Cycle≤2% © 2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A www.fairchildsemi.com 2 TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor Electrical Characteristics TC=25°C unless otherwise noted VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 10000 IC/IB = 10 1000 VBE(sat) 100 VCE(sat) 10 1 10000 10 IC[mA], COLLECTOR CURRENT 1000 10000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 50 IC(MAX) (PULSE) 45 PC[W], POWER DISSIPATION 100μs IC(MAX) (DC) s 1m s 5m IC[A], COLLECTOR CURRENT 100 1 TIP31 VCEO MAX. TIP31A VCEO MAX. TIP31B VCEO MAX. TIP31C VCEO MAX. 40 35 30 25 20 15 10 5 0.1 0 10 100 0 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area © 2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A 25 Figure 4. Power Derating www.fairchildsemi.com 3 TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor Typical Characteristics TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A www.fairchildsemi.com 4 TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation TIP31/TIP31A/TIP31B/TIP31C Rev. A www.fairchildsemi.com 5