Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 ■ Absolute Maximum Ratings +0.1 0.4±0.08 0.5±0.08 1.5±0.1 (Ta=25˚C) 2.5±0.1 45° +0.25 0.4max. ● High transition frequency fT. Small collector output capacitance Cob. Wide current range. 4.0–0.20 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.4±0.04 3.0±0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage VCER*1 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 3.5 V Peak collector current ICP 300 mA Collector current IC 150 mA Collector power dissipation PC*2 1.0 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1F REB = 1.2kΩ Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit 10 µA Collector cutoff current ICEO VCE = 35V, IB = 0 Collector to base voltage VCBO IC = 100µA, IE = 0 110 V VCER IC = 500µA, RBE = 470Ω 100 V VCEO IC = 1mA, IB = 0 50 V V Collector to emitter voltage Emitter to base voltage VEBO IE = 100µA, IC = 0 3.5 Forward current transfer ratio hFE VCE = 5V, IC = 100mA* 20 Collector to emitter saturation voltage VCE(sat) IC = 150mA, IB = 15mA* fT1 VCB = 10V, IE = –10mA, f = 200MHz 300 MHz fT2 VCB = 10V, IE = –110mA*, f = 200MHz 350 MHz Cob VCB = 30V, IE = 0, f = 1MHz Transition frequency Collector output capacitance 0.5 3 V pF * Pulse measurement 1 Transistor 2SC4543 PC — Ta IC — VCE IC — VBE 240 1.2 1.0 0.8 0.6 0.4 120 VCE=5V Ta=25˚C 200 IB=5.0mA 4.5mA 160 4.0mA 3.5mA 120 3.0mA 2.5mA 80 2.0mA 1.5mA 40 Ta=75˚C –25˚C 80 60 40 20 1.0mA 0.2 25˚C 100 Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.4 Collector current IC (mA) Collector power dissipation PC (W) 1.6 0.5mA 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 30 100 300 1000 Collector current IC (mA) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 0 0.2 0.4 0.6 1.0 600 100 80 60 Ta=75˚C 25˚C 40 –25˚C 20 0 0.1 0.8 Base to emitter voltage VBE (V) fT — I E 0.3 1 3 10 30 Collector current IC (mA) Cob — VCB 6 12 VCE=5V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 10 10 120 IC/IB=10 3 8 hFE — IC 100 1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 VCB=10V Ta=25˚C Transition frequency fT (MHz) 0 100 500 400 300 200 100 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA)