Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 ■ Absolute Maximum Ratings * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –7 A Collector current IC –4 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : I or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ max Unit –100 nA –100 nA Collector cutoff current ICBO VCB = –30V, IE = 0 Emitter cutoff current IEBO VEB = –7V, IC = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –30 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V *1 VCE = –2V, IC = –2A*2 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = –0.1A*2 120 – 0.6 315 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz 120 Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz 40 –1 MHz pF *2 *1h FE V Pulse measurement Rank classification Rank Q R hFE 120 ~ 205 180 ~ 315 Marking Symbol IQ IR 1 2SB1073 Transistor PC — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 –12 1000 –10 IB=–200µA 800 –180µA –160µA –140µA –120µA 600 –100µA 400 –80µA –60µA –40µA 200 0.2 25˚C Ta=75˚C –6 –25˚C –4 –2 0 40 60 80 100 120 140 160 0 0 –2 –4 0 Forward current transfer ratio hFE Ta=75˚C 25˚C – 0.03 –25˚C – 0.01 – 0.003 –3 Collector current IC (A) –10 400 Ta=75˚C 200 – 0.8 120 500 300 – 0.4 25˚C –25˚C 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1.2 –1.6 –2.0 Base to emitter voltage VBE (V) Cob — VCB VCE=–2V –1 –1 –12 600 –3 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –10 hFE — IC IC/IB=30 Ta=25˚C – 0.3 –8 Collector to emitter voltage VCE (V) VCE(sat) — IC –10 –6 Collector output capacitance Cob (pF) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –8 –20µA 0 – 0.1 VCE=–2V Ta=25˚C Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.4 0 2 IC — VBE 1200 Collector current IC (mA) Collector power dissipation PC (W) 1.6 –1 –3 Collector current IC (A) –10 IE=0 f=1MHz Ta=25˚C 100 80 60 40 20 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V)