Silicon Junction FETs (Small Signal) 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 2.9 –0.05 ■ Features 2 Unit VGDO −40 V Gate to Source voltage VGSO −40 V Drain current ID 1 mA Gate current IG 10 mA Allowable power dissipation PD 150 mW Junction temperature Tj 150 °C −55 to +150 °C Storage temperature Tstg +0.1 0.16 –0.06 Ratings 0.1 to 0.3 0.4±0.2 0 to 0.1 Symbol 0.8 Parameter Gate to Drain voltage +0.2 1.1 –0.1 ■ Absolute Maximum Ratings (Ta = 25°C) 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): EB ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain to Source cut-off current IDSS * Conditions Gate to Source leakage current IGSS VGS = −20V, VDS = 0 Gate to Drain voltage VGDS IG = −10µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 1µA Forward transfer admittance | Yfs | VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss * min typ 30 max Unit 200 µA − 0.5 nA −40 V −1.3 0.05 −3 V mS 1 pF 0.4 pF 0.4 pF IDSS rank classification Runk O P Q R IDSS (mA) 30 to 75 50 to 100 70 to 130 100 to 200 Marking Symbol EBP EBQ EBR EBS 1 Silicon Junction FETs (Small Signal) PD Ta ID VDS 240 VDS=10V Ta=25˚C 200 160 120 80 40 200 VGS=0.4V 160 0.2V 120 0V – 0.2V 80 – 0.4V Drain current ID (µA) 200 – 0.6V 0 160 120 80 40 25˚C Ta=75˚C 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 0.6 IDSS=100µA 0.2 0 –1.2 10 VDS=10V Ta=25˚C 200 160 IDSS=100µA 120 – 0.4 0 0.4 80 40 Gate to source voltage VGS (V) 0 40 80 120 160 –25˚C – 0.8 – 0.4 0 0.4 Gate to source voltage VGS (V) Ciss, Coss, Crss VDS 0 – 0.8 0 –1.2 12 240 Forward transfer admittance |Yfs| (mS) 0.8 0.4 8 | Yfs | ID VDS=10V f=1kHz Ta=25˚C 1.0 6 Drain to source voltage VDS (V) | Yfs | VGS 1.2 4 200 Drain current ID (µA) 240 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 0 Forward transfer admittance |Yfs| (mS) ID VGS 240 Drain current ID (µA) Allowable power dissipation PD (mW) 240 2 2SK1842 1.2 VGS=0V Ta=25˚C f=1MHz 1.0 Ciss 0.8 0.6 0.4 Crss Coss 0.2 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V)