Composite Transistors XP1D874 N-channel junction FET 2.1±0.1 0.65 2.0±0.1 2 1.25±0.1 0.425 5 3 4 0.9± 0.1 +0.05 ■ 2SK1842 × 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 1 : Source (FET1) 2 : Drain 3 : Source (FET2) Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Gate to drain voltage Rating Gate to source voltage of element Gate current Drain current VGDO –40 V VGSO –40 V IG 10 mA ID 1 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 0.12 – 0.02 0.2 ● Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. 1 0.65 0.425 ■ Features ● 0.2±0.05 Unit: mm For low-frequency impedance conversion For infrared sensor ■ Electrical Characteristics Parameter 0.2±0.1 4 : Gate (FET2) 5 : Gate (FET1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: EQ Internal Connection 1 FET 1 5 2 3 FET 2 4 (Ta=25˚C) Symbol Conditions min typ max Unit 200 µA Gate to drain voltage VGDS IG = –10µA, VGS = 0 –40 Drain current IDSS VDS = 10V, VGS = 0 30 V Gate cutoff current IGSS VGS = –20V, VDS = 0 Forward transfer admittance | YfS | VDS = 10V, VGS = 0, f = 1kHz Gate to source cutoff voltage VGSC VDS = 10V, ID = 1µA –1.3 Common source short-circuit input capacitance Ciss VDS = 10V, VGS = 0, f = 1MHz 1.0 pF Common source reverse transfer capacitance Crss VDS = 10V, VGS = 0, f = 1MHz 0.4 pF Common source short-circuit output capacitance Coss VDS = 10V, VGS = 0, f = 1MHz 0.4 pF – 0.5 0.05 nA mS –3.0 V 1 Composite Transistors XP1D874 PT — Ta ID — VDS ID — VGS 240 250 240 100 50 200 160 VGS=0.4V 0.2V 120 0V –0.2V 80 –0.4V –0.6V 40 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0 2 4 6 8 10 Drain to source voltage VDS (V) 12 Drain current ID (µA) 150 0 2 VDS=10V 200 200 Drain current ID (µA) Total power dissipation PT (mW) Ta=25˚C 160 Ta=–25˚C 120 25˚C 80 75˚C 40 0 –2.0 –1.4 –0.8 –0.2 0.4 Drain to source voltage VGS (V)