PANASONIC 2SK656

Silicon MOS FETs (Small Signal)
2SK656
Silicon N-Channel MOS FET
For switching
unit: mm
4.0±0.2
3.0±0.2
■ Features
Symbol
Ratings
Unit
Drain to Source breakdown voltage
VDSS
50
V
Gate to Source voltage
VGSO
8
V
Drain current
ID
100
mA
Max drain current
IDP
200
mA
Allowable power dissipation
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
1
2
3
1.27 1.27
2.0±0.2
Parameter
marking
0.7±0.1
■ Absolute Maximum Ratings (Ta = 25°C)
+0.2
0.45–0.1
15.6±0.5
● High-speed switching
● Small drive current owing to high input inpedance
● High electrostatic breakdown voltage
1: Source
2: Drain
3: Gate
EIAJ: SC-72
New S Type Package
2.54±0.15
Internal Connection
D
R1
G
R2
S
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
IDSS
VDS = 10V, VGS = 0
Gate to Source leakage current
IGSS
VGS = 8V, VDS = 0
Drain to Source breakdown voltage
VDSS
ID = 100µA, VGS = 0
50
Gate threshold voltage
Vth
ID = 100µA, VDS = VGS
1.5
Drain to Source ON-resistance
RDS(on)
ID = 20mA, VGS = 5V
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20
High level output voltage
VOH
VDD = 5V, VGS = 1V, RL = 200Ω
4.5
Low level output voltage
VOL
VDD = 5V, VGS = 5V, RL = 200Ω
Input resistance
R1 +
R2*1
Output capacitance (Common Source)
Coss
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
*2
typ
40
max
Unit
10
µA
80
µA
V
3.5
50
35
V
Ω
mS
V
100
Input capacitance (Common Source) Ciss
*1
min
1
V
200
kΩ
9
pF
4.5
pF
1.1
pF
Turn-on time
ton
*2
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
1
µs
Turn-off time
toff*2
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
1
µs
Resistance ratio R1/R2 = 1/50
Pulse measurement
1
Silicon MOS FETs (Small Signal)
2SK656
PD  Ta
ID  VDS
120
120
100
160
120
80
100
VGS=6.0V
80
5.5V
5.0V
60
4.5V
40
40
20
0
0
4.0V
3.5V
Ta=–25˚C
25˚C
60
75˚C
40
20
40
60
80 100 120 140 160
0
0
Input capacitance (Common source),
Output capacitance (Common source) Ciss,Coss (pF)
30
20
10
0
6
10
8
10
Ciss
8
6
4
Coss
2
0
0.1
0.3
1
3
10
30
100
Drain to source voltage VDS (V)
IO  VIN
VIN  IO
1000
VO=5V
Ta=25˚C
300
1
100
Input voltage VIN (V)
3
0.3
0.1
0.03
0.01
0.003
VO=1V
Ta=25˚C
30
10
3
1
0.3
0.001
0
1
2
3
0
2
4
Input voltage VIN (V)
5
0.1
0.1
0.3
1
3
10
4
6
8
10
Gate to source voltage VGS (V)
RDS(on)  VGS
VGS=0
f=1MHz
Ta=25˚C
10
Gate to source voltage VGS (V)
10
8
Ciss, Coss  VDS
40
4
6
12
VDS=5V
Ta=25˚C
2
4
Drain to source voltage VDS (V)
| Yfs |  VGS
0
2
30
Output current IO (mA)
100
Drain to source ON-resistance RDS(on) (Ω)
20
50
Forward transfer admittance |Yfs| (mS)
80
3.0V
Ambient temperature Ta (˚C)
Output current IO (mA)
Drain current ID (mA)
200
0
2
VDS=5V
Ta=25˚C
Drain current ID (mA)
Allowable power dissipation PD (mW)
240
ID  VGS
120
ID=20mA
100
80
60
Ta=75˚C
40
25˚C
–25˚C
20
0
0
2
4
6
8
10
Gate to source voltage VGS (V)