BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages 3 • Based on Infineon' s reliable high volume Silicon 2 4 1 Germanium technology • High OIP3 and P -1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise figure NFmin = 0.8 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available Top View 4 3 XYs 1 2 Direction of Unreeling ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP650F Marking R5s 1=B Pin Configuration 2=E 3=C 1 4=E - Package - TSFP-4 2013-09-06 BFP650F Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 °C 4 TA =-55 °C 3.7 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 150 Base current IB 10 Total power dissipation1) Ptot 500 mW Junction temperature TJ 150 °C Storage temperature TStg mA TS ≤ 85°C -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit 130 K/W Electrical Characteristics at T A = 25 °C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)CEO 4 4.5 - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 110 180 270 - DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 80 mA, VCE = 3 V, pulse measured 1T S is 2For measured on the emitter lead at the soldering point to the pcb the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-06 BFP650F Electrical Characteristics at TA = 25 °C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT - 42 - GHz Ccb - 0.26 - pF Cce - 0.45 - Ceb - 1.3 - AC Characteristics (verified by random sampling) Transition frequency IC = 80 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 10 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 10 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt - 0.8 - - 1.9 - IC = 80 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz - 21.5 - f = 6 GHz - 11 - Power gain, maximum available1) Gma |S21e|2 Transducer gain IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz 15 17.5 - - 7.5 - IP3 - 31 - P-1dB - 17.5 - f = 6 GHz Third order intercept point at output2) dB dBm VCE = 3 V, IC = 80 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB compression point at output IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2013-09-06 BFP650F Total power dissipation P tot = ƒ(TS) Collector-base capacitance Ccb = ƒ (VCB) f = 1 MHz 550 0.8 500 0.7 450 0.6 400 0.5 300 Ccb [pF] Ptot [mW] 350 250 0.4 0.3 200 150 0.2 100 0.1 50 0 0 0 15 30 45 60 75 90 105 120 135 150 0 1 2 3 4 TS [°C] 5 6 7 8 9 10 VCB [V] Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 1 GHz Power gain Gma, Gms = ƒ (f) VCE = 3 V, IC = 80 mA 45 50 45 40 40 35 3.00V 35 30 G ms 25 G [dB] fT [GHz] 30 25 20 20 2.00V G 2 |S | 15 ma 21 15 10 10 5 5 1.00V 0.50V 0 0 0 20 40 60 80 100 120 140 160 180 0 IC [mA] 1 2 3 4 5 6 f [GHz] 4 2013-09-06 BFP650F Power gain Gma, Gms = ƒ (IC) Power gain Gma, Gms = ƒ (VCE ) VCE = 3 V IC = 80 mA f = parameter in GHz f = parameter in GHz 30 30 0.90GHz 28 0.90GHz 26 25 24 1.80GHz 22 20 2.40GHz 1.80GHz 20 18 G [dB] G [dB] 3.00GHz 2.40GHz 16 15 4.00GHz 5.00GHz 3.00GHz 6.00GHz 14 10 4.00GHz 12 5.00GHz 6.00GHz 10 5 8 6 0 0 20 40 60 80 100 120 140 160 180 200 0 IC [mA] 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VCE [V] 5 2013-09-06 Package TSFP-4 6 BFP650F 2013-09-06 BFP650F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2013-09-06