INFINEON BFR740L3RH

BFR740L3RH
NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Extremly small and flat leadless package,
3
height 0.32 mm, ideal for modules
1
2
• Provides outstanding performance for
wireless applications up to 10 GHz
• Ideal for WLAN applications,
including routers and access points
• Based on Infineon's reliable high volume
SiGe:C technology
• Outstanding noise figure NFmin 0.5 dB at 1.8 GHz
Outstanding noise figure NFmin 0.8 dB at 6 GHz
• Accurate SPICE GP model enables effective
design in process
• High maximum stable and available gain
Gms = 24.5 dB at 1.8 GHz, Gma = 15 dB at 6 GHz
• Pb-free (RoHS compliant) package
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR740L3RH
Marking
R9
Pin Configuration
1=B
1
2=C
3=E
Package
TSLP-3-9
2010-09-08
BFR740L3RH
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
Unit
V
TA > 0°C
4
TA ≤ 0°C
3.5
Collector-emitter voltage
VCES
13
Collector-base voltage
VCBO
13
Emitter-base voltage
VEBO
1.2
Collector current
IC
30
Base current
IB
3
Total power dissipation1)
Ptot
160
mW
Junction temperature
TJ
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
TStg
-65 ... 150
mA
TS ≤ 99°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
≤ 320
K/W
1T
S is measured on the emitter lead at the soldering point to the pcb
2For calculation of R
thJA please refer to Application Note AN077 Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
4
4.7
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, IB = 0
Collector-emitter cutoff current
µA
ICES
VCE = 13 V, VBE = 0
-
-
30
VCE = 5 V, VBE = 0
-
0.001
0.04
ICBO
-
1
40
IEBO
-
10
900
hFE
160
250
400
Collector-base cutoff current
nA
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
-
IC = 25 mA, VCE = 3 V, pulse measured
2
2010-09-08
BFR740L3RH
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
fT
-
42
-
Ccb
-
0.09
0.15
Cce
-
0.18
-
Ceb
-
0.38
-
AC Characteristics (verified by random sampling)
Transition frequency
GHz
IC = 25 mA, VCE = 3 V, f = 2 GHz
Collector-base capacitance
pF
VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
-
0.5
-
IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
-
0.8
-
Gms
-
24.5
-
dB
Gma
-
15
-
dB
Power gain, maximum stable1)
IC = 25 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Power gain, maximum available1)
IC = 25 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
|S21e|2
Transducer gain
dB
IC = 25 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
-
22
-
f = 6 GHz
-
12.5
-
IP3
-
25
-
P-1dB
-
11
-
Third order intercept point at output2)
dBm
VCE = 3 V, IC = 25 mA, ZS =ZL =50 Ω, f = 1.8 GHz
1dB compression point at output
IC = 25 mA, VCE = 3 V, ZS =ZL =50 Ω, f = 1.8 GHz
1/2
ma = |S21e / S12e | (k-(k²-1) ), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
1G
3
2010-09-08
BFR740L3RH
Total power dissipation P tot = ƒ(TS)
Permissible Puls Load RthJS = ƒ (t p)
180
160
140
100
RthJS [K/W]
Ptot [mW]
120
80
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D=0
2
10
60
40
→ tp
←
D=tp /T
20
← T
→
1
10
0
0
15
30
45
60
75
90
105
120
135
−7
10
150
TS [°C]
−6
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
10
tp [s]
Permissible Pulse Load
Collector-base capacitance Ccb = ƒ (VCB)
Ptotmax/PtotDC = ƒ(tp )
f = 1 MHz
2
10
0.2
→ tp
←
D=tp /T
0.18
← T
0.16
→
0.14
1
10
Ccb [pF]
Ptotmax/PtotDC
0.12
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.1
0.08
0.06
0.04
0.02
0
10
−7
10
0
−6
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
10
0
2
4
6
8
10
12
VCB [V]
tp [s]
4
2010-09-08
BFR740L3RH
Third order Intercept Point IP3 = ƒ (IC)
Transition frequency fT = ƒ(IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = 2 GHz
VCE = parameter, f = 1.8 GHz
30
50
27
45
2 V to 4V
4.00V
24
40
21
35
18
30
fT [GHz]
IP3 [dBm]
3.00V
15
2.00V
25
12
20
9
15
1.00V
6
10
1.00V
3
0.75V
0.50V
5
0
0
0
5
10
15
20
25
30
35
0
5
10
15
IC [mA]
20
25
30
35
IC [mA]
Power gain Gma, Gms = ƒ (f)
Power gain Gma, Gms = ƒ (IC)
VCE = 3 V, IC = 25 mA
VCE = 3 V
f = parameter
45
34
32
40
30
0.90GHz
35
28
30
26
Gms
1.80GHz
24
G [dB]
G [dB]
25
2.40GHz
22
20
3.00GHz
20
Gma
2
|S21|
15
4.00GHz
18
5.00GHz
16
10
6.00GHz
14
5
12
0
10
0
1
2
3
4
5
6
0
f [GHz]
5
10
15
20
25
30
35
IC [mA]
5
2010-09-08
BFR740L3RH
Power gain Gma, Gms = ƒ (VCE )
Minimum noise figure NFmin = ƒ(IC)
IC = 25 mA
VCE = 3 V, f = parameter
f = parameter
ZS = ZSopt
36
2
32
1.8
1.6
0.90GHz
28
1.80GHz
24
f = 6GHz
f = 5GHz
f = 4GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
1.4
2.40GHz
1.2
3.00GHz
F [dB]
G [dB]
20
4.00GHz
5.00GHz
16
6.00GHz
1
0.8
12
0.6
8
0.4
4
0.2
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
VCE [V]
15
20
25
30
Ic [mA]
Noise figure F = ƒ(IC )
VCE = 3V, f = 1.8 GHz
Minimum noise figure NFmin = ƒ(f)
VCE = 3V, ZS = ZSopt
2
1.8
1.6
1.4
1.2
Z = 50Ω
F [dB]
S
ZS = ZSopt
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
Ic [mA]
6
2010-09-08
BFR740L3RH
Source impedance for min.
noise figure vs. frequency
VCE = 3 V, IC = 8 mA / 25 mA
7
2010-09-08
BFR740L3RH
SPICE GP (Gummel-Poon)
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFR740L3RH SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFR740L3RH SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
8
2010-09-08
Package TSLP-3-9
BFR740L3RH
Package Outline
Bottom view
0.4 ±0.035 1)
Top view
0.6 ±0.05
0.31+0.01
-0.02
1
2
3
2
1
0.35 ±0.05
Pin 1
marking
1±0.05
3
2 x 0.25 ±0.035 1)
0.575 ±0.05
0.5 ±0.035 1)
2 x 0.15 ±0.035 1)
1) Dimension applies to plated terminal
Foot Print
0.225
0.225
Solder mask
0.255
R0.1
0.2
0.2
0.17
0.15
Copper
0.5
0.95
0.2
0.35
1
0.45
R0.19
0.315
0.6
0.38
For board assembly information please refer to Infineon website "Packages"
Stencil apertures
Marking Layout (Example)
BFR705L3RH
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.35
Pin 1
marking
8
1.2
4
0.8
9
2010-09-08
BFR740L3RH
Datasheet Revision History: 8 September 2010
This datasheet replaces the revision from 30 March 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision 30 March 2007
Page
Subject (changes since last revision)
1
2
4
6,7
AEC Q101 label removed
Typical values for leakage currents included, values for maximum leakage
currents reduced
SPICE model parameters shifted from datasheet to the internet simulation data
section
NFmin and GammaOpt Charts updated
10
2010-09-08
BFR740L3RH
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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2010-09-08