BFP540 Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz 2 4 1 • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BFP540 ATs Pin Configuration 1=B 2=E 3=C 4=E - Package - SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 °C 4.5 TA = -55 °C 4 Collector-emitter voltage VCES 14 Collector-base voltage VCBO 14 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 8 Total power dissipation1) Ptot 250 mW Junction temperature TJ 150 °C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 mA TS ≤ 77°C 1T S is measured on the emitter lead at the soldering point to the pcb 1 2013-09-20 BFP540 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 290 K/W Values Unit Electrical Characteristics at T A = 25 °C, unless otherwise specified Symbol Parameter min. typ. max. 4.5 5 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 10 µA hFE 50 110 185 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-20 BFP540 Electrical Characteristics at TA = 25 °C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 21 30 - Ccb - 0.14 0.24 Cce - 0.33 - Ceb - 0.65 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt - 0.9 1.4 IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt - 1.3 - Gms - 21.5 - dB Gma - 16 - dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz |S21e|2 Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 16 18.5 - - 14.5 - IP3 - 24.5 - P-1dB - 11 - f = 3 GHz Third order intercept point at output2) dB dBm VCE = 2 V, IC = 20 mA, ZS =ZL =50 Ω, f = 1.8 GHz 1dB compression point at output IC = 20 mA, VCE = 2 V, ZS =ZL =50 Ω, f = 1.8 GHz 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 3 2013-09-20 BFP540 Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 3 300 mW RthJS Ptot K/W 200 10 2 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 50 0 0 20 40 60 80 100 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 tp Permissible Pulse Load Collector-base capacitance Ccb = ƒ(VCB ) Ptotmax/PtotDC = ƒ(tp ) f = 1MHz 10 1 P totmax/ PtotDC 0.2 pF Ccb D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 0.5 1 1.5 2 2.5 3 V 4 VCB 4 2013-09-20 0 BFP540 Third order Intercept Point IP3=ƒ(IC) Transition frequency fT= ƒ(IC) (Output, ZS=ZL=50Ω) f = 1GHz VCE = parameter, f = 1.8GHz VCE = Parameter in V 35 30 dBm GHz 4V 26 24 3V 25 2V 20 fT IP3 22 18 4 20 1.5V 3 16 15 14 12 1V 10 2 1.5 10 8 1 5 6 0.5 4 2 0 10 20 30 40 50 60 70 80 mA 0 0 100 10 20 30 40 50 60 70 mA IC 90 IC Power gain Gma, Gms = ƒ(IC ) Power Gain Gma, Gms = ƒ(f), VCE = 2V |S21|² = f (f) f = Parameter in GHz VCE = 2V, IC = 20mA 50 30 dB dB 1 40 35 G IC 20 2 30 3 25 Gms 15 4 10 20 5 Gma 6 15 |S21|² 5 10 0 0 10 20 30 40 50 60 70 mA 5 0 90 IC 1 2 3 4 GHz 6 G 5 2013-09-20 BFP540 Power gain Gma, Gms = ƒ (VCE ) Noise figure F = ƒ(IC ) IC = 20mA VCE = 2V, ZS = ZSopt f = Parameter in GHz 30 4 dB dB 1 3 20 F G 2 15 2.5 2 3 10 1.5 4 f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 5 1 6 5 0.5 0 0 0.5 1 1.5 2 2.5 3 V 0 0 4 10 20 30 40 50 60 mA VCE 80 IC Noise figure F = ƒ(IC ) VCE = 2V, f = 1.8GHz Noise figure F = ƒ(f) VCE = 2V, ZS = ZSopt 4 3 dB dB 3 F F 2 2.5 2 1.5 1.5 1 1 ZS = 50Ohm ZS = Zsopt IC = 20mA IC = 5mA 0.5 0.5 0 0 10 20 30 40 50 60 mA 0 0 80 IC 1 2 3 4 GHz 6 f 6 2013-09-20 BFP540 Source impedance for min. noise figure vs. frequency VCE = 2V, IC = 5mA / 20mA +j50 +j25 +j100 +j10 2.4GHz 1.8GHz 0.9GHz 3GHz 0 10 25 50 100 4GHz 5mA 20mA 5GHz -j10 6GHz -j25 -j100 -j50 7 2013-09-20 BFP540 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP540 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP540 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 2013-09-20 Package SOT343 9 BFP540 2013-09-20 BFP540 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2013-09-20