DS3601EA 00

®
RT3601EA
Signal Phase PWM Controller with Integrated Driver for
IMVP8 Mobile CPU Core Power Supply
General Description
Features
The RT3601EA is an IMVP8 compliant CPU power
controller with 1 embedded driver. The RT3601EA adopts
G-NAVP TM (Green Native AVP) which is Richtek's
proprietary topology derived from finite DC gain of EA
amplifier with current mode control, making it easy to set
the droop to meet all Intel CPU requirements of AVP
(Adaptive Voltage Positioning). Based on the G-NAVPTM
topology, the RT3601EA also features a quick response
mechanism for optimized AVP performance during load
transient. The RT3601EA supports mode transition function
with various operating states. A serial VID (SVID) interface
is built in the RT3601EA to communicate with Intel IMVP8
compliant CPU. The RT3601EA supports VID on-the-fly
function with three different slew rates : Fast, Slow and
Decay. By utilizing the G-NAVPTM topology, the operating

frequency of the RT3601EA varies with VID, load and input
voltage to further enhance the efficiency even in CCM.
Moreover, the G-NAVPTM with CCRCOT (Constant Current
Ripple COT) technology provides superior output voltage
ripple over the entire input/output range. The built-in high
accuracy DAC converts the SVID code ranging from 0.25V
to 1.52V with 5mV per step. The RT3601EA integrates a
high accuracy ADC for platform setting functions, such as
quick response trigger level. Besides, the setting function
also supposes this two rails address exchange. The
RT3601EA provides VR ready output signals. It also
features complete fault protection functions including overvoltage (OV), negative voltage (NV), over-current (OC) and
under-voltage lockout (UVLO). The RT3601EA is available
in the WQFN-28L 4x4 small foot print package.

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
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






Intel IMVP8 Serial VID Interface Compatible Power
Management States
Single Phase with 1 Embedded MOSFET Drvier
PWM Controller
G-NAVP TM (Green Native Adaptive Voltage
Positioning) Topology
0.5% DAC Accuracy
Differential Remote Voltage Sensing
Built-in ADC for Platform Programming
Accurate Current Balance
System Thermal Compensated AVP
Diode Emulation Mode at Light Load Condition for
Multiple or Single Phase Operation
Fast Transient Response
VR Ready Indicator
Thermal Throttling
Current Monitor Output
OVP, OCP, NVP, UVLO
Slew Rate Setting/Address Flip Function
Rail Address Flexibility
DVID Enhancement
Applications



IMVP8 Intel Core Supply
Notebook/ Desktop Computer/ Servers Multi-phase CPU
Core Supply
AVP Step-Down Converter
Simplified Application Circuit
RT3601EA
To PCH
PGOOD
PWM
Driver
MOSFET
VCORE
VR_HOT
To CPU
VCLK
VDIO
PHASE
MOSFET
VCORE
ALERT
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS3601EA-00 June 2016
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
1
RT3601EA
Pin Configuration
Ordering Information
(TOP VIEW)
RT3601EA
SET1
SET2
SET3
VSEN
FB
COMP
RGND
Package Type
QW : WQFN-28L 4x4 (W-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
28 27 26 25 24 23 22
VCC
EN
VR_HOT
VDIO
ALERT
VCLK
VR_READY
Note :
Richtek products are :

RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
20
19
18
17
16
15
GND
29
ISENN
ISENP
PSYS
IMON
VREF
TSEN
DRVEN
8 9 10 11 12 13 14
Suitable for use in SnPb or Pb-free soldering processes.
Marking Information
WQFN-28L 4x4
3H= : Product Code
3H=YM
DNN
21
2
3
4
5
6
7
BOOT
UGATE
PHASE
LGATE
PVCC
VIN
PWM

1
YMDNN : Date Code
Functional Pin Description
Pin No
Pin Name
Pin Function
1
VCC
Controller Power Supply. Connect this pin to 5V and place a decoupling capacitor
2.2F at least. The decoupling capacitor is as close PWM controller as possible.
2
EN
VR Enable Control Input.
3
VR_HOT
Thermal Monitor Output, this Pin is Active Low.
4
VDIO
VR and CPU Data Transmission Interface.
5
ALERT
SVID Alert. (Active low)
6
VCLK
Synchronous Clock from the CPU.
7
VR_READY
VR Ready Indicator.
8
BOOT
Bootstrap Supply for High-Side Gate MOSFET Driver.
9
UGATE
High-Side Driver Output. Connect the pin to the gate of high-side MOSFET.
10
PHASE
Switch Node of High-Side Driver. Connect the pin to high-side MOSFET source
together with the low-side MOSFET drain and inductor.
11
LGATE
Low-Side Driver Output. This pin drives the gate of low-side MOSFET.
12
PVCC
Driver Power Supply Input. Connect this pin to GND by a minimum 2.2F
ceramic Capacitor.
13
VIN
VIN Input Pin. Connect a low pass filter to this pin to set on-time.
14
PWM
PWM Outputs.
15
DRVEN
16
TSEN
17
VREF
External Driver Enable Control. Connecting to driver enable pin.
Thermal Sense Input. Platform can use this to set BOOT voltage and DVID
threshold.
Fixed 0.6V Output Reference Voltage. This voltage is only used to offset the output
voltage of IMON pin. Between this pin and GND must be placed a exact 0.47F
capacitor and 3.9 resistor.
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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2
is a registered trademark of Richtek Technology Corporation.
DS3601EA-00 June 2016
RT3601EA
Pin No
Pin Name
Pin Function
18
IMON
Current Monitor Output. This pin outputs a voltage proportional to the output
current.
19
PSYS
System Input Power Monitor.
20
ISENP
Positive Current Sense Input.
21
ISENN
Negative Current Sense Input.
22
RGND
Return Ground. This pin is the negative node of the differential remote voltage
sensing.
23
COMP
Compensation. This pin is error amplifier output pin.
24
FB
Negative Input of the Error Amplifier. This pin is for output voltage feedback to
controller.
25
VSEN
26
SET3
27
SET2
SET1
29
(Exposed Pad)
GND
1st Platform Setting. Platform can use this pin to set ICCMAX,AI Gain, PSYS
function and DVID width. Moreover, SETI pin features a special function for users to
confirm the soldering condition of the controller under zero VBOOT condition.
Connect the SETI pin to 5V and turn on the EN pin, if the soldering is good, both
rails will output to 1.05V.
Ground. The exposed pad must be soldered to a large PCB and connected to GND
for maximum power dissipation.
VCC
VSEN
EN
VR_HOT
ALERT
VDIO
VCLK
TSEN
PSYS
SET2
SET3
SET1
Functional Block Diagram
VR_READY
28
VR Voltage Sense Input. This pin is connected to the terminal of VR output voltage.
3rd Platform Setting. Platform can use this pin to set QRTH, QRWIDTH, IPSK,
anti-overshoot threshold.
2nd Platform Setting. Platform can use this pin to set switching frequency, zero
load-line, anti-overshoot function, VR address and OCS.
MUX
UVLO
IMONI
GND
ADC
ADC
SVID Interface
Configuration Registers
Control Logic
From Control Logic
RGND
DAC
Soft-Start &
Slew Rate Control
FB
VSET
ERROR
AMP
QRTH
QRWIDTH
OCS
AI
TONSET
IMAX
ADDR
OLL
ANTIOVS
OCP
DVID_TH
Offset
Cancellation
+
-
+
+
COMP
PWM
CMP
-
QR
QRWIDTH
AI
ISENP
ISENN
Loop Control Protection
Logic
DRVEN
TON
GEN/
Driver
Interface
PWM
PVCC
BOOT
TONSET
+
Driver
RAMP
-
IMON
+
IMONI
OCS/OCP_TH
OC
To Protection Logic
UGATE
PHASE
LGATE
-
VSEN
VINR
OV/UV/NV
VREFI
VIN
+
-
VREF
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS3601EA-00 June 2016
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
3
RT3601EA
Operation
The RT3601EA adopts G-NAVPTM (Green Native AVP)
which is Richtek's proprietary topology derived from finite
DC gain of EA amplifier with current mode control, making
it easy to set the droop to meet all Intel CPU requirements
of AVP (Adaptive Voltage Positioning).
Current Balance
The G-NAVPTM controller is one type of current mode
constant on-time control with DC offset cancellation. The
approach can not only improve DC offset problem for
increasing system accuracy but also provide fast transient
response. When current feedback signal reaches COMP
signal, the RT3601EA generates an on-time width to
achieve PWM modulation.
Offset Cancellation
TON GEN/Driver Interface PWMx
Generate the sequentially according to the phase control
signal from the Loop Control/Protection Logic. Pulse width
is determined by current balance result and pin setting.
Once quick response mechanism is triggered, VR will
allow all PWM to turn on at the same time. PWM status
is also controlled by Protection Logic. Different protections
may cause different PWM status (Both High-Z or LG turnon).
SVID Interface/Configuration Registers/Control
Logic
The interface receives the SVID signal from CPU and sends
the relative signals to Loop Control/Protection Logic for
loop control to execute the action by CPU. The registers
save the pin setting data from ADC output. The Control
Logic controls the ADC timing, generates the digital code
of the VID for VSEN voltage.
Loop Control/Protection Logic
Each phase current sense signal is sent to the current
balance circuit which adjusts the on-time of each phase
to optimize current sharing.
Cancel the current/voltage ripple issue to get the accurate
VSEN.
UVLO
Detect the DVD and VCC voltage and issue POR signal as
they are high enough.
DAC
Generate an analog signal according to the digital code
generated by Control Logic.
Soft-Start & Slew Rate Control
Control the Dynamic VID slew rate of VSET according to
the SetVID fast or SetVID slow.
Error Amp
Error amplifier generates COMP signal by the difference
between VSET and FB.
PWM CMP
The PWM comparator compares Ramp signal COMP
signal and current feedback signal to generate a signal
for TON trigger.
IMON Filter
IMON Filter is used for average sum current signal by
analog RC filter.
It controls the power on sequence, the protection behavior,
and the operational phase number.
MUX and ADC
The MUX supports the inputs from SET1, SET2, SET3,
IMON, TSEN. The ADC converts these analog signals to
digital codes for reporting or performance adjustment.
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
www.richtek.com
4
is a registered trademark of Richtek Technology Corporation.
DS3601EA-00 June 2016
RT3601EA
Table 1. VR12.5 VID Code Table
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
Voltage (V)
0
0
0
0
0
0
0
1
01
0.25
0
0
0
0
0
0
1
0
02
0.255
0
0
0
0
0
0
1
1
03
0.26
0
0
0
0
0
1
0
0
04
0.265
0
0
0
0
0
1
0
1
05
0.27
0
0
0
0
0
1
1
0
06
0.275
0
0
0
0
0
1
1
1
07
0.28
0
0
0
0
1
0
0
0
08
0.285
0
0
0
0
1
0
0
1
09
0.29
0
0
0
0
1
0
1
0
0A
0.295
0
0
0
0
1
0
1
1
0B
0.3
0
0
0
0
1
1
0
0
0C
0.305
0
0
0
0
1
1
0
1
0D
0.31
0
0
0
0
1
1
1
0
0E
0.315
0
0
0
0
1
1
1
1
0F
0.32
0
0
0
1
0
0
0
0
10
0.325
0
0
0
1
0
0
0
1
11
0.33
0
0
0
1
0
0
1
0
12
0.335
0
0
0
1
0
0
1
1
13
0.34
0
0
0
1
0
1
0
0
14
0.345
0
0
0
1
0
1
0
1
15
0.35
0
0
0
1
0
1
1
0
16
0.355
0
0
0
1
0
1
1
1
17
0.36
0
0
0
1
1
0
0
0
18
0.365
0
0
0
1
1
0
0
1
19
0.37
0
0
0
1
1
0
1
0
1A
0.375
0
0
0
1
1
0
1
1
1B
0.38
0
0
0
1
1
1
0
0
1C
0.385
0
0
0
1
1
1
0
1
1D
0.39
0
0
0
1
1
1
1
0
1E
0.395
0
0
0
1
1
1
1
1
1F
0.4
0
0
1
0
0
0
0
0
20
0.405
0
0
1
0
0
0
0
1
21
0.41
0
0
1
0
0
0
1
0
22
0.415
0
0
1
0
0
0
1
1
23
0.42
0
0
1
0
0
1
0
0
24
0.425
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS3601EA-00 June 2016
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
5
RT3601EA
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
Voltage (V)
0
0
1
0
0
1
0
1
25
0.43
0
0
1
0
0
1
1
0
26
0.435
0
0
1
0
0
1
1
1
27
0.44
0
0
1
0
1
0
0
0
28
0.445
0
0
1
0
1
0
0
1
29
0.45
0
0
1
0
1
0
1
0
2A
0.455
0
0
1
0
1
0
1
1
2B
0.46
0
0
1
0
1
1
0
0
2C
0.465
0
0
1
0
1
1
0
1
2D
0.47
0
0
1
0
1
1
1
0
2E
0.475
0
0
1
0
1
1
1
1
2F
0.48
0
0
1
1
0
0
0
0
30
0.485
0
0
1
1
0
0
0
1
31
0.49
0
0
1
1
0
0
1
0
32
0.495
0
0
1
1
0
0
1
1
33
0.5
0
0
1
1
0
1
0
0
34
0.505
0
0
1
1
0
1
0
1
35
0.51
0
0
1
1
0
1
1
0
36
0.515
0
0
1
1
0
1
1
1
37
0.52
0
0
1
1
1
0
0
0
38
0.525
0
0
1
1
1
0
0
1
39
0.53
0
0
1
1
1
0
1
0
3A
0.535
0
0
1
1
1
0
1
1
3B
0.54
0
0
1
1
1
1
0
0
3C
0.545
0
0
1
1
1
1
0
1
3D
0.55
0
0
1
1
1
1
1
0
3E
0.555
0
0
1
1
1
1
1
1
3F
0.56
0
1
0
0
0
0
0
0
40
0.565
0
1
0
0
0
0
0
1
41
0.57
0
1
0
0
0
0
1
0
42
0.575
0
1
0
0
0
0
1
1
43
0.58
0
1
0
0
0
1
0
0
44
0.585
0
1
0
0
0
1
0
1
45
0.59
0
1
0
0
0
1
1
0
46
0.595
0
1
0
0
0
1
1
1
47
0.6
0
1
0
0
1
0
0
0
48
0.605
0
1
0
0
1
0
0
1
49
0.61
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is a registered trademark of Richtek Technology Corporation.
DS3601EA-00 June 2016
RT3601EA
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
Voltage (V)
0
1
0
0
1
0
1
0
4A
0.615
0
1
0
0
1
0
1
1
4B
0.62
0
1
0
0
1
1
0
0
4C
0.625
0
1
0
0
1
1
0
1
4D
0.63
0
1
0
0
1
1
1
0
4E
0.635
0
1
0
0
1
1
1
1
4F
0.64
0
1
0
1
0
0
0
0
50
0.645
0
1
0
1
0
0
0
1
51
0.65
0
1
0
1
0
0
1
0
52
0.655
0
1
0
1
0
0
1
1
53
0.66
0
1
0
1
0
1
0
0
54
0.665
0
1
0
1
0
1
0
1
55
0.67
0
1
0
1
0
1
1
0
56
0.675
0
1
0
1
0
1
1
1
57
0.68
0
1
0
1
1
0
0
0
58
0.685
0
1
0
1
1
0
0
1
59
0.69
0
1
0
1
1
0
1
0
5A
0.695
0
1
0
1
1
0
1
1
5B
0.7
0
1
0
1
1
1
0
0
5C
0.705
0
1
0
1
1
1
0
1
5D
0.71
0
1
0
1
1
1
1
0
5E
0.715
0
1
0
1
1
1
1
1
5F
0.72
0
1
1
0
0
0
0
0
60
0.725
0
1
1
0
0
0
0
1
61
0.73
0
1
1
0
0
0
1
0
62
0.735
0
1
1
0
0
0
1
1
63
0.74
0
1
1
0
0
1
0
0
64
0.745
0
1
1
0
0
1
0
1
65
0.75
0
1
1
0
0
1
1
0
66
0.755
0
1
1
0
0
1
1
1
67
0.76
0
1
1
0
1
0
0
0
68
0.765
0
1
1
0
1
0
0
1
69
0.77
0
1
1
0
1
0
1
0
6A
0.775
0
1
1
0
1
0
1
1
6B
0.78
0
1
1
0
1
1
0
0
6C
0.785
0
1
1
0
1
1
0
1
6D
0.79
0
1
1
0
1
1
1
0
6E
0.795
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS3601EA-00 June 2016
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
7
RT3601EA
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
Voltage (V)
0
1
1
0
1
1
1
1
6F
0.8
0
1
1
1
0
0
0
0
70
0.805
0
1
1
1
0
0
0
1
71
0.81
0
1
1
1
0
0
1
0
72
0.815
0
1
1
1
0
0
1
1
73
0.82
0
1
1
1
0
1
0
0
74
0.825
0
1
1
1
0
1
0
1
75
0.83
0
1
1
1
0
1
1
0
76
0.835
0
1
1
1
0
1
1
1
77
0.84
0
1
1
1
1
0
0
0
78
0.845
0
1
1
1
1
0
0
1
79
0.85
0
1
1
1
1
0
1
0
7A
0.855
0
1
1
1
1
0
1
1
7B
0.86
0
1
1
1
1
1
0
0
7C
0.865
0
1
1
1
1
1
0
1
7D
0.87
0
1
1
1
1
1
1
0
7E
0.875
0
1
1
1
1
1
1
1
7F
0.88
1
0
0
0
0
0
0
0
80
0.885
1
0
0
0
0
0
0
1
81
0.89
1
0
0
0
0
0
1
0
82
0.895
1
0
0
0
0
0
1
1
83
0.9
1
0
0
0
0
1
0
0
84
0.905
1
0
0
0
0
1
0
1
85
0.91
1
0
0
0
0
1
1
0
86
0.915
1
0
0
0
0
1
1
1
87
0.92
1
0
0
0
1
0
0
0
88
0.925
1
0
0
0
1
0
0
1
89
0.93
1
0
0
0
1
0
1
0
8A
0.935
1
0
0
0
1
0
1
1
8B
0.94
1
0
0
0
1
1
0
0
8C
0.945
1
0
0
0
1
1
0
1
8D
0.95
1
0
0
0
1
1
1
0
8E
0.955
1
0
0
0
1
1
1
1
8F
0.96
1
0
0
1
0
0
0
0
90
0.965
1
0
0
1
0
0
0
1
91
0.97
1
0
0
1
0
0
1
0
92
0.975
1
0
0
1
0
0
1
1
93
0.98
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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8
is a registered trademark of Richtek Technology Corporation.
DS3601EA-00 June 2016
RT3601EA
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
Voltage (V)
1
0
0
1
0
1
0
0
94
0.985
1
0
0
1
0
1
0
1
95
0.99
1
0
0
1
0
1
1
0
96
0.995
1
0
0
1
0
1
1
1
97
1
1
0
0
1
1
0
0
0
98
1.005
1
0
0
1
1
0
0
1
99
1.01
1
0
0
1
1
0
1
0
9A
1.015
1
0
0
1
1
0
1
1
9B
1.02
1
0
0
1
1
1
0
0
9C
1.025
1
0
0
1
1
1
0
1
9D
1.03
1
0
0
1
1
1
1
0
9E
1.035
1
0
0
1
1
1
1
1
9F
1.04
1
0
1
0
0
0
0
0
A0
1.045
1
0
1
0
0
0
0
1
A1
1.05
1
0
1
0
0
0
1
0
A2
1.055
1
0
1
0
0
0
1
1
A3
1.06
1
0
1
0
0
1
0
0
A4
1.065
1
0
1
0
0
1
0
1
A5
1.07
1
0
1
0
0
1
1
0
A6
1.075
1
0
1
0
0
1
1
1
A7
1.08
1
0
1
0
1
0
0
0
A8
1.085
1
0
1
0
1
0
0
1
A9
1.09
1
0
1
0
1
0
1
0
AA
1.095
1
0
1
0
1
0
1
1
AB
1.1
1
0
1
0
1
1
0
0
AC
1.105
1
0
1
0
1
1
0
1
AD
1.11
1
0
1
0
1
1
1
0
AE
1.115
1
0
1
0
1
1
1
1
AF
1.12
1
0
1
1
0
0
0
0
B0
1.125
1
0
1
1
0
0
0
1
B1
1.13
1
0
1
1
0
0
1
0
B2
1.135
1
0
1
1
0
0
1
1
B3
1.14
1
0
1
1
0
1
0
0
B4
1.145
1
0
1
1
0
1
0
1
B5
1.15
1
0
1
1
0
1
1
0
B6
1.155
1
0
1
1
0
1
1
1
B7
1.16
1
0
1
1
1
0
0
0
B8
1.165
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
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9
RT3601EA
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
Voltage (V)
1
0
1
1
1
0
0
1
B9
1.17
1
0
1
1
1
0
1
0
BA
1.175
1
0
1
1
1
0
1
1
BB
1.18
1
0
1
1
1
1
0
0
BC
1.185
1
0
1
1
1
1
0
1
BD
1.19
1
0
1
1
1
1
1
0
BE
1.195
1
0
1
1
1
1
1
1
BF
1.2
1
1
0
0
0
0
0
0
C0
1.205
1
1
0
0
0
0
0
1
C1
1.21
1
1
0
0
0
0
1
0
C2
1.215
1
1
0
0
0
0
1
1
C3
1.22
1
1
0
0
0
1
0
0
C4
1.225
1
1
0
0
0
1
0
1
C5
1.23
1
1
0
0
0
1
1
0
C6
1.235
1
1
0
0
0
1
1
1
C7
1.24
1
1
0
0
1
0
0
0
C8
1.245
1
1
0
0
1
0
0
1
C9
1.25
1
1
0
0
1
0
1
0
CA
1.255
1
1
0
0
1
0
1
1
CB
1.26
1
1
0
0
1
1
0
0
CC
1.265
1
1
0
0
1
1
0
1
CD
1.27
1
1
0
0
1
1
1
0
CE
1.275
1
1
0
0
1
1
1
1
CF
1.28
1
1
0
1
0
0
0
0
D0
1.285
1
1
0
1
0
0
0
1
D1
1.29
1
1
0
1
0
0
1
0
D2
1.295
1
1
0
1
0
0
1
1
D3
1.3
1
1
0
1
0
1
0
0
D4
1.305
1
1
0
1
0
1
0
1
D5
1.31
1
1
0
1
0
1
1
0
D6
1.315
1
1
0
1
0
1
1
1
D7
1.32
1
1
0
1
1
0
0
0
D8
1.325
1
1
0
1
1
0
0
1
D9
1.33
1
1
0
1
1
0
1
0
DA
1.335
1
1
0
1
1
0
1
1
DB
1.34
1
1
0
1
1
1
0
0
DC
1.345
1
1
0
1
1
1
0
1
DD
1.35
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is a registered trademark of Richtek Technology Corporation.
DS3601EA-00 June 2016
RT3601EA
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
Voltage (V)
1
1
0
1
1
1
1
0
DE
1.355
1
1
0
1
1
1
1
1
DF
1.36
1
1
1
0
0
0
0
0
E0
1.365
1
1
1
0
0
0
0
1
E1
1.37
1
1
1
0
0
0
1
0
E2
1.375
1
1
1
0
0
0
1
1
E3
1.38
1
1
1
0
0
1
0
0
E4
1.385
1
1
1
0
0
1
0
1
E5
1.39
1
1
1
0
0
1
1
0
E6
1.395
1
1
1
0
0
1
1
1
E7
1.4
1
1
1
0
1
0
0
0
E8
1.405
1
1
1
0
1
0
0
1
E9
1.41
1
1
1
0
1
0
1
0
EA
1.415
1
1
1
0
1
0
1
1
EB
1.42
1
1
1
0
1
1
0
0
EC
1.425
1
1
1
0
1
1
0
1
ED
1.43
1
1
1
0
1
1
1
0
EE
1.435
1
1
1
0
1
1
1
1
EF
1.44
1
1
1
1
0
0
0
0
F0
1.445
1
1
1
1
0
0
0
1
F1
1.45
1
1
1
1
0
0
1
0
F2
1.455
1
1
1
1
0
0
1
1
F3
1.46
1
1
1
1
0
1
0
0
F4
1.465
1
1
1
1
0
1
0
1
F5
1.47
1
1
1
1
0
1
1
0
F6
1.475
1
1
1
1
0
1
1
1
F7
1.48
1
1
1
1
1
0
0
0
F8
1.485
1
1
1
1
1
0
0
1
F9
1.49
1
1
1
1
1
0
1
0
FA
1.495
1
1
1
1
1
0
1
1
FB
1.5
1
1
1
1
1
1
0
0
FC
1.505
1
1
1
1
1
1
0
1
FD
1.51
1
1
1
1
1
1
1
0
FE
1.515
1
1
1
1
1
1
1
1
FF
1.52
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
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11
RT3601EA
Absolute Maximum Ratings















(Note 1)
VCC to GND ------------------------------------------------------------------------------------------- −0.3V to 6.5V
RGND to GND ----------------------------------------------------------------------------------------- −0.3V to 0.3V
VIN to GND --------------------------------------------------------------------------------------------- −0.3V to 28V
PVCC to GND ----------------------------------------------------------------------------------------- −0.3V to 6.5V
BOOT to PHASE ------------------------------------------------------------------------------------- −0.3V to 6.5V
PHASE to GND
DC -------------------------------------------------------------------------------------------------------- −0.3V to 30V
<20ns --------------------------------------------------------------------------------------------------- −10V to 35V
LGATE to GND
DC -------------------------------------------------------------------------------------------------------- −0.3V to (VCC+ 0.3V)
<20ns --------------------------------------------------------------------------------------------------- −2V to (VCC+ 0.3V)
UGATE to GND
DC -------------------------------------------------------------------------------------------------------- (VPHASE − 0.3V) to (VBOOT + 0.3V)
<20ns --------------------------------------------------------------------------------------------------- (VPHASE − 2V) to (VBOOT + 0.3V)
Other Pins ---------------------------------------------------------------------------------------------- −0.3V to (VCC + 0.3V)
Power Dissipation, PD @ TA = 25°C
WQFN-28L 4x4 --------------------------------------------------------------------------------------- 3.5W
Package Thermal Resistance (Note 2)
WQFN-28L 4x4, θJA ---------------------------------------------------------------------------------- 28.5°C/W
WQFN-28L 4x4, θJC --------------------------------------------------------------------------------- 7°C/W
Junction Temperature -------------------------------------------------------------------------------- 150°C
Lead Temperature (Soldering, 10 sec.) ---------------------------------------------------------- 260°C
Storage Temperature Range ----------------------------------------------------------------------- −65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model) ------------------------------------------------------------------------- 1.5kV
Recommended Operating Conditions




(Note 4)
Supply Voltage, VIN --------------------------------------------------------------------------------- 4.5V to 26V
Supply Voltage, VCC, PVCC ---------------------------------------------------------------------- 4.5V to 5.5V
Junction Temperature Range ----------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range ----------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VCC = 5V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
4.5
5
5.5
V
Supply Input
Supply Voltage
VCC
Supply Current
IVCC
EN = 1.05V, No Switching
--
5
--
Supply Current at PS4
IVCC_PS4
EN = 1.05V, No Switching
--
0.1
--
Shutdown Current
ISHDN
VEN = 0
--
--
5
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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12
mA
A
is a registered trademark of Richtek Technology Corporation.
DS3601EA-00 June 2016
RT3601EA
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
0.5%
8
10
0
0
0
0.5%
8
10
% of VID
Reference and DAC
DAC Accuracy
VFB
VDAC = 0.75V 1.52V
VDAC = 0.5V 0.745V
VDAC = 0.25V 0.495V
SR
Set VID Fast
Set VID Slow, set slow = 1/2 Fast
30
15
33.75
16.875
45
22.5
mV/s
RL = 47k(Note 5)
CLOAD = 5pF (Note 5)
70
-3
80
5
--
--3
dB
MHz
mV
--
5
--
V/s
0.3
--
3.6
V
--
5
--
mA
0.4
--
0.4
mV
1
--
--
M
2.085
2.15
2.215
k
40
--
40
mV
mV
Slew Rate
Dynamic VID Slew Rate
EA Amplifier
DC Gain
Gain-Bandwidth Product
Input Offset
ADC
GBW
VEAOFS
Slew Rate
SREA
CLOAD = 10pF (Gain= 4, RF =
47k, VOUT =0.5V to -3V)
Output Voltage Range
VCOMP
RL = 47k
Max Source/Sink Current IOUTEA
VCOMP = 2V
Current Sensing Amplifier
Input Offset Voltage
VOSCS
Impedance at Positive
Input
RISENxP
VDAC = 1.1V,
40mV < ISENP – ISENN < 40mV
Current Sensing Resistor RCS
VISENP VISENN = 10mV
Input Range
VISEN_IN
VDAC = 1.1V, ISENP – ISENN
On-Time Setting
TON
VIN = 19V, VDAC = 1.3V,
TON = 160ns
--
160
--
ns
Minimum Off time
TOFF
VDAC = 1V
--
165
--
ns
VUVLO
Falling edge
3.86
4.06
4.26
V
VUVLO
Rising edge hysteresis
--
190
--
mV
TON Setting
Protections
Under-Voltage Lockout
Threshold
Over-Voltage Protection
Threshold
VOV
VDAC < 1V
EN Threshold
mV
mV
VDAC
350
VDAC
300
mV
VNV
100
50
--
mV
VIH
0.7
--
--
V
VIL
--
--
0.3
V
1
--
1
A
Respect to VDAC voltage
Leakage Current of EN
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS3601EA-00 June 2016
VDAC
+ 400
1400
VDAC
400
Under-Voltage Protection
VUV
Threshold
Negative Voltage
Protection Threshold
EN and VR_REDAY
Respect to VDAC voltage
VDAC VDAC +
+ 300
350
1300
1350
mV
is a registered trademark of Richtek Technology Corporation.
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13
RT3601EA
Parameter
PGOOD Pull Low
Voltage
Symbol
Test Conditions
VPGOOD
IVR_Ready = 10mA
VIH
Respect to INTEL Spec. with 50mV
hysteresis
Min
Typ
Max
Unit
--
--
0.13
V
0.65
--
--
--
--
0.45
1
--
1
A
--
--
0.13
V
0.595
0.6
0.605
V
Serial VID and VR_HOT
VCLK, VDIO
Leakage Current of
VCLK, VDIO, ALERT
VIL
ILEAK_IN
V
and VR_HOT
IVDIO = 10mA
VDIO, ALERT and
VR_HOT Pull Low
Voltage
IALERT = 10mA
IVR_HOT = 10mA
VREF
VREF
VREF
ADC
Digital IMON Set
Update Period
TSEN Threshold for
Tmp_Zone[7] Transition
TSEN Threshold for
Tmp_Zone[6] Transition
TSEN Threshold for
Tmp_Zone[5] Transition
TSEN Threshold for
Tmp_Zone[4] Transition
TSEN Threshold for
Tmp_Zone[3] Transition
TSEN Threshold for
Tmp_Zone[2] Transition
TSEN Threshold for
Tmp_Zone[1] Transition
TSEN Threshold for
Tmp_Zone[0] Transition
Update Period
VIMON  VIMON_INI = 0.8V,
Auxiliary rail
VIMON  VIMON_INI = 0.4V, Main rail
(Note 5)
--
255
--
---
255
125
---
100C
--
1.092
--
97C
--
1.132
--
94C
--
1.176
--
91C
--
1.226
--
88C
--
1.283
--
85C
--
1.346
--
82C
--
1.418
--
75C
--
1.624
--
(Note 5)
--
100
--
RPWMsr
--
30
--
RPWMsk
--
10
--
VIMON
TIMON
Decimal
VTSEN
Ttsen
s
V
s
PWM Driving Capability
PWM_x

Driver On-Resistance
UGATEx Drive Source
RUGATEsr
VBOOT  VPHASE Forced to 5V
--
1.7
--

UGATEx Drive Sink
RUGATEsk
VBOOT  VPHASE Forced to 5V
--
1.4
--

LGATEx Drive Source
RLGATEsr
ISource = 100mA
--
1.6
--

LGATEx Drive Sink
RLGATEsk
ISink = 100mA
--
1.1
--

Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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14
is a registered trademark of Richtek Technology Corporation.
DS3601EA-00 June 2016
RT3601EA
Parameter
Symbol
Dead-Time
Internal Boost Diode
Resistance
RBOOT
Test Conditions
From LGATE Falling to UGATE
Rising
From UGATE Falling to LGATE
Rising
PVCC to BOOTx, IBOOT = 10mA
Min
Typ
Max
Unit
30
ns
20
--
40
80

Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. Guarantee by design.
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
www.richtek.com
15
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16
VREF
R8
R7 26.1k
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
VSS_SENSE
VCC_SENSE
C7
Optional
C6
Optional
Enable
To CPU
VCCIO
R15
0
565
390
C3
0.47µF
VIN
R11 3.01k R12
R4
R3 28k
VREF
R22
NC
R16
3.9
R20
85
R19
75
C8
Optional
47k
47pF
R18
10k
C5
58K
C2
0.22µF
R6
8.87k
R5
215
C1
2.2µF
R24 10k R23
C4
270pF
R21
170
R17
R10
2k
R14
2.1k
1.2
R9
18.7
R13
36
5V
R2
22
VCC
IMON
VREF
COMP
24 FB
22 RGND
23
7 VR_READY
3
VR_HOT
6 VCLK
4
VDIO
5
ALERT
2
EN
25
VSEN
18
17
13 VIN
9
8
12
14
GND
TSEN
DRVEN
ISENN
RNTC2
100k
R37
48.7k
NC
NC
C16
2.2µF
R39
8.87k
R38
113
5V
VIN
R36
1.24k
C9
0.1µF
R28 0
R27 0
R26
2.2
R25
0
29 (Exposed Pad)
16
15
21
ISENP 20
PWM
PHASE 10
11
LGATE
UGATE
BOOT
PVCC
RT3601EA
PSYS
SET3
27 SET2
28 SET1
26
1
R1
(Optional)
19
R35
53.6k
C11
3.3nF
R29
1
VREF
R30
768
C10
10µF x 3
R31
845
RNTC1
4.7k
R32
4.7k
C12
0.47µF
L1
0.22µH
C13 C14 C15
22µF x 18
R33
100
LOAD
VCORE_OUT
R34
100
VSS_SENSE
VCC_SENSE
RT3601EA
Typical Application Circuit
Using Embedded MOSFET Driver
is a registered trademark of Richtek Technology Corporation.
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VREF
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
VSS_SENSE
VCC_SENSE
C7
Optional
C6
Optional
Enable
To CPU
VCCIO
R20
85
R17
R19
75
C8
Optional
47k
47pF
R18
10k
C5
58k
C2
0.22µF
R6
8.87k
R5
215
C1
2.2µF
R23 10k R24
C4
270pF
R21
170
3.9
1.2
R10
2k
R14
2.1k
22
R9
18.7
VREF
R2
R13
36
R22
NC
R16
R15
C3
0.47µF
VIN
0
565
R8
R7 26.1k
R11 3.01k R12
390
R4
R3 28k
5V
SET3
VCC
IMON
VREF
COMP
24 FB
22 RGND
23
7 VR_READY
3
VR_HOT
6 VCLK
4
VDIO
5
ALERT
2
EN
25
VSEN
18
17
13 VIN
C9
1µF
GND
TSEN
DRVEN
ISENN
5V
R27
R26
5V
RNTC2
100k
R37
48.7k
R39
8.87k
R38
113
R36
1.24k
0
0
VREF
C10
2.2 0.1µF
R35
53.6k
PHASE
PWM
R28
LGATE
EN
RT9610C
29 (Exposed Pad)
16
15
21
BOOT
C17
2.2µF
PGND UGATE
VCC
NC
NC
NC
NC
R25
0
DRVEN
DRVEN
14
8
9
10
11
12
ISENP 20
PWM
BOOT
UGATE
PHASE
LGATE
PVCC
RT3601EA
PSYS
27 SET2
28 SET1
26
1
R1
(Optional)
19
VIN
C12
3.3nF
R29
1
R30
768
C11
10µF x 3
R31
845
RNTC1
4.7k
R32
4.7k
C13
0.47µF
L1
0.22µH
C14 C15 C16
22µF x 18
R33
100
LOAD
VCORE_OUT
R34
100
VSS_SENSE
VCC_SENSE
RT3601EA
Using External MOSFET Driver
is a registered trademark of Richtek Technology Corporation.
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17
RT3601EA
Typical Operating Characteristics
VR Power On from EN
CORE VR Power Off from EN
V CORE
(400mV/Div)
V CORE
(400mV/Div)
PGOOD
(1V/Div)
UGATE1
(20V/Div)
PGOOD
(1V/Div)
UGATE
(20V/Div)
EN
(1V/Div)
EN
(1V/Div)
VIN = 19V, No Load, VID = 1.05V
VIN = 19V, No Load, VID = 1.05V
Time (500μs/Div)
Time (50μs/Div)
CORE VR OCP
CORE VR OVP
V CORE
(400mV/Div)
V CORE
(500mV/Div)
PGOOD
(1V/Div)
PGOOD
(1V/Div)
UGATE
(20V/Div)
UGATE
(20V/Div)
I LOAD
(40A/Div)
LGATE
(6V/Div)
VIN = 19V, VID = 0.9V
VIN = 19V, VID = 0.9V
Time (100μs/Div)
Time (50μs/Div)
CORE VR Dynamic VID Up
CORE VR Dynamic VID Down
V CORE
V CORE
VCLK
VCLK
(1V/Div)
V CORE
(200mV/Div)
VDIO
(1V/Div)
ALERT
(1V/Div)
VCLK
VCLK
(1V/Div)
VDIO
ALERT
VIN = 19V,
VID = 0.6V to 0.9VSlew Rate = Slow, ILOAD = 5A
Time (10μs/Div)
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18
V CORE
(200mV/Div)
VDIO
(1V/Div)
VDIO
ALERT
ALERT VIN = 19V,
(1V/Div) VID = 0.9V to 0.6VSlew Rate = Slow, ILOAD = 5A
Time (10μs/Div)
is a registered trademark of Richtek Technology Corporation.
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RT3601EA
CORE VR Dynamic VID Up
CORE VR Mode Transient
V CORE
V CORE
VCLK
VCLK
VLCK
(1V/Div)
UGATE
(20V/Div)
VCLK
(1V/Div)
V CORE
(200mV/Div)
VDIO
(1V/Div)
VDIO
UGATE
LGATE
LGATE
(6V/Div)
V CORE
(20mV/Div)
ALERT
ALERT VIN = 19V,
(1V/Div) VID = 0.6V to 0.9VSlew Rate = Fast, ILOAD = 5A
Time (10μs/Div)
VIN = 19V, VID = 0.9V, PS0 to PS2, ILOAD = 1A
Time (50μs/Div)
CORE VR Thermal Monitioring
CORE VR Mode Transient
V CORE
VCLK
VLCK
(1V/Div)
UGATE1
VTSEN
(500mV/Div)
UGATE
(20V/Div)
LGATE1
LGATE
(6V/Div)
V CORE
(20mV/Div)
VR_HOT
(1V/Div)
VIN = 19V, VID = 0.9V, PS2 to PS0, ILOAD = 1A
VIN = 19V, VTSEN Sweep from 1V to 2V
Time (5ms/Div)
Time (50μs/Div)
∆VIMON_CORE vs. Load Current
0.5
∆VIMON_CORE (V)
0.4
0.3
0.2
0.1
0.0
0
5
10
15
20
25
30
Load Current (A)
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
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19
RT3601EA
Applications Information
The RT3601EA is a single phase synchronous Buck
controller, designed to meet Intel IMVP8 compatible CPUs
specification with a serial SVID control interface. The
controller uses an ADC to implement all kinds of settings
to save total pin number for easy use and increasing PCB
space utilization. The RT3601EA is used in notebooks,
desktop computers and servers.
General loop Function
G-NAVPTM Control Mode
The RT3601EA adopts the G-NAVPTM controller, which is
a current mode constant on-time control with DC offset
cancellation. The approach can not only improve DC offset
problem for increasing system accuracy but also provide
fast transient response. When current feedback signal
reaches comp signal, the RT3601EA generates an ontime width to achieve PWM modulation. Figure 1 shows
the basic G-NAVPTM behavior waveforms in continuous
conduct mode (CCM).
Diode Emulation Mode (DEM)
As well-known, the dominate power loss is switching
related loss during light load, hence VR needs to be
operated in asynchronous mode (or called discontinuous
conduct mode, DCM) to reduce switching related loss
since switching frequency is dependent on loading in the
asynchronous mode. The RT3601EA can operate in diode
emulation mode (DEM) to improve light load efficiency. In
DEM operation, the behavior of low-side MOSFET(s) needs
to work like a diode, that is, the low-side MOSFET(s) will
be turned on when the phase voltage is a negative value,
i.e. the inductor current follows from Source to Drain of
low-side MOSFET(s). And the low-side MOSFET(s) will
be turned off when phase voltage is a positive value, i.e.
reversed current is not allowed. Figure 2 shows the control
behavior in DEM. Figure 3 shows the G-NAVPTM operation
in DEM to illustrate the control behaviors. When the load
decreases, the discharge time of output capacitors
increases during UGATE and LGATE are turned off. Hence,
the switching frequency and switching loss will be reduced
to improve efficiency in light load condition.
Current feedback signal
Comp signal
PWM
Figure 1 (a). G-NAVPTM Behavior Waveforms in CCM in Steady State
Current feedback signal
Comp signal
PWM
Figure 1 (b). G-NAVPTM Behavior Waveforms in CCM in Load Transient.
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is a registered trademark of Richtek Technology Corporation.
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RT3601EA
Inductor current
Phase node
UGATE
LGATE
Figure 2. Diode Emulation Mode (DEM) in Steady State
Inductor
current signal
Output capacitor
discharge slope
COMP signal
UGATE
LGATE
Inductor
current signal
Output capacitor
discharge slope
COMP signal
UGATE
LGATE
Figure 3. G-NAVPTM Operation in DEM. (a) : The load is lighter, output capacitor discharge slope is smaller and the
switching frequency is lower. (b) : The load is increasing, output capacitor discharge slope is increased and switching
frequency is increased, too.
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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21
RT3601EA
Multi-Function Pin Setting Mechanism
For reducing total pin number of package, SET [1:3] pins
adopt the multi-function pin setting mechanism in the
RT3601EA. Figure 4 illustrates this operating mechanism
for SET [1:3]. The voltage at VREF pin will be pulled up to
3.2V after power ready (POR). First, external voltage
divider is used to set the Function1, and then internal
current source 80μA is used to set the Function2. The
setting voltage of Function1 and Function2 can be
represented as
R2  3.2V
R1  R2
VFunction2  80 Α  R1 R2
R1  R2
Connecting a R3 resistor from the SET[1:3] pin to the
middle node of voltage divider can help to fine tune the set
voltage of Function 2, which does not affect the set voltage
of Function1. The Figure 5 shows the setting method and
the set voltage of Function 1 and Function2 can be
represented as :
R2  3.2V
R1 R2
 80 Α   R3  R1 R2 
R1 R2 

VFunction1 
VFunction2
Function 2
<5:0>
VFunction1 
Function 1
<5:0>
80µA
ADC
VREF
All function setting will be done within 500μs after power
ready (POR), and the voltage at VREF pin will be fixed to
0.6V after all function setting over.
Function 1
Register
If VFunction1 and VFunction2 are determined, R1 and R2 can
be calculated as follows :
3.2V  VFunction2
80 Α  VFunction1
R1 VFunction1
R2 
3.2V  VFunction1
R1
SET[1:3]
R3
R2
Function 2
Register
R1 
Function 2
<5:0>
Function 1
<5:0>
80µA
ADC
Function 2
<5:0>
Function 1
<5:0>
VREF
80µA
Function 1
Register
ADC
Function 1
Register
R1
SETx
R2
Function 2
Register
Function 2
<5:0>
Function 1
<5:0>
R1
SET[1:3]
VREF
Function 2
Register
R3
R2
Figure 5. Multi-Function Pin Setting Mechanism with a
R3 Resistor to Fine Tune the Set Voltage of Function2
80µA
ADC
VREF
Function 1
Register
R1
SETx
Function 2
Register
R2
Figure 4. Multi-Function Pin Setting Mechanism for SET
[1:3]
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is a registered trademark of Richtek Technology Corporation.
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RT3601EA
Figure 6 shows operating mechanism for TSEN pins. There
is only voltage divider Function to program VR. The internal
current source is used to thermal sensing. The Function
for program VR can be represented as
VFunction1 
R2
 3.2V
R1 R2
Function
<5:0>
80µA
ADC
VREF
DVID_TH and
VBOOT Setting
Register
RNTC
R1
R3
R2
TSEN
Thermal Sense
Figure 6. Multi-Function Pin Setting Mechanism for
TSEN
TSEN and VR_HOT
The VR_HOT signal is an open-drain signal which is used
for VR thermal protection. When the sensed voltage in
each TSEN pin is less than 1.092, the VR_HOT signal
will be pulled-low to notify CPU that the thermal protection
needs to work. According to Intel VR definition, VR_HOT
signal needs acting if VR power chain temperature
exceeds 100°C. Placing an NTC thermistor at the hottest
area in the VR power chain and its connection is shown
in Figure 7, to design the TSEN network so that VTSEN =
1.092V at 100°C. The resistance accuracy of TSEN
network is recommended to be 1% or higher.
VTSEN  80 Α  (RNTC //R3) + (R1//R2)
VDDIO
Power Ready (POR) Detection
During start-up, the RT3601EA detects the voltage at the
voltage input pins : VCC and EN. When VCC> 4.45V, the
RT3601EA recognizes the power state of system to be
ready (POR = high) and waits for enable command at the
EN pin. After POR = high and VEN > 0.7V, the RT3601EA
enters start-up sequence. If VCC drops below low threshold
(POR = low), the RT3601EA enters power down sequence
and all functions will be disabled. Normally, connecting
system voltage VTT (1.05V) to the EN pin is recommended.
2ms (max) after the chip has been enabled, the SVID
circuitry will be ready. All the protection latches (OVP,
OCP, UVP) will be cleared only by VCC. The condition of
VEN = low will not clear these latches. Figure 8 and Figure
9 show the POR detection and the timing chart for POR
process, respectively.
Under-Voltage Lockout (UVLO)
During normal operation, if the voltage at the VCC pin
drops below POR threshold 3.86V (min), the VR triggers
UVLO. The UVLO protection forces all high-side
MOSFETs and low-side MOSFETs off by shutting down
internal PWM logic drivers.
VCC
5V
3.86V
EN
VTT
1.05V
Chip
Enable
CP
-
Figure 8. POR Detection
POR
EN
VREF
80µA
RNTC
2ms
SVID Invalid
Valid
Invalid
R1
Figure 9. Timing Chart for POR Process
+
POR
-
+
0.7V
CP
VCC
VR_HOT
TSEN
+
R3
R2
1.092V
Figure 7. VR_HOT Circuit
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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23
RT3601EA
Switching Frequency Setting
The RT3601EA is one kind of constant on-time control.
The patented CCRCOT (Constant Current Ripple COT)
technology can generate an adaptive on-time with input
voltage and VID code to obtain a constant current ripple,
so that the output voltage ripple can be controlled nearly
like a constant as different input and output voltages
change.
The Ton equation can be classified as below two regions.
VDAC  0.9
TON 
26.2  VDAC
 15n
k TON  (VIN  0.9)
0.3 < VDAC  0.9
TON 
23.6
 15n
k TON  (VIN  VDAC )
where kTON is a coefficient which can be selected by SET2,
as shown in Table 3.
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is a registered trademark of Richtek Technology Corporation.
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RT3601EA
Table 2. SET1 Pin Setting for ICCMAX and AI Gain
VSET1  VREF 
R2
R1  R2
Min
Typical
Max
Unit
3.75
25
46.25
mV
2 (OCP = 6x)
54.25
75
95.75
mV
4 (OCP = 6x)
104.75
125
145.25
mV
6 (OCP = 6x)
155.25
175
194.75
mV
8 (OCP = 6x)
205.75
225
244.25
mV
10 (OCP = 4x)
256.25
275
293.75
mV
12 (OCP = 4x)
306.75
325
343.25
mV
14 (OCP = 4x)
357.25
375
392.75
mV
407.75
425
442.25
mV
458.25
475
491.75
mV
20 (OCP = 3x)
508.75
525
541.25
mV
22 (OCP = 3x)
559.25
575
590.75
mV
24 (OCP = 3x)
609.75
625
640.25
mV
26 (OCP = 2x)
660.25
675
689.75
mV
28 (OCP = 2x)
710.75
725
739.25
mV
30 (OCP = 2x)
761.25
775
788.75
mV
32 (OCP = 2x)
811.75
825
838.25
mV
2 (OCP = 6x)
862.25
875
887.75
mV
4 (OCP = 6x)
912.75
925
937.25
mV
6 (OCP = 6x)
963.25
975
986.75
mV
8 (OCP = 6x)
1013.75
1025
1036.25
mV
10 (OCP = 4x)
1064.25
1075
1085.75
mV
12 (OCP = 4x)
1114.75
1125
1135.25
mV
14 (OCP = 4x)
1165.25
1175
1184.75
mV
1215.75
1225
1234.25
mV
1266.25
1275
1283.75
mV
20 (OCP = 3x)
1316.75
1325
1333.25
mV
22 (OCP = 3x)
1367.25
1375
1382.75
mV
24 (OCP = 3x)
1417.75
1425
1432.25
mV
26 (OCP = 2x)
1468.25
1475
1481.75
mV
28 (OCP = 2x)
1518.75
1525
1531.25
mV
30 (OCP = 2x)
1569.25
1575
1580.75
mV
32 (OCP = 2x)
AI Gain
20
80
ICCMAX (A)
16 (OCP = 4x)
18 (OCP = 3x)
16 (OCP = 4x)
18 (OCP = 3x)
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25
RT3601EA
Table 3. SET2 Pin Setting for kTON and OCS
VSET2  VREF 
R2
R1  R2
Min
Typical
Max
Unit
3.75
25
46.25
mV
54.25
75
95.75
mV
104.75
125
145.25
mV
155.25
175
194.75
mV
180
205.75
225
244.25
mV
120
256.25
275
293.75
mV
306.75
325
343.25
mV
357.25
375
392.75
mV
180
407.75
425
442.25
mV
120
458.25
475
491.75
mV
508.75
525
541.25
mV
559.25
575
590.75
mV
180
609.75
625
640.25
mV
120
660.25
675
689.75
mV
710.75
725
739.25
mV
761.25
775
788.75
mV
180
811.75
825
838.25
mV
120
862.25
875
887.75
mV
912.75
925
937.25
mV
963.25
975
986.75
mV
180
1013.75
1025
1036.25
mV
120
1064.25
1075
1085.75
mV
1114.75
1125
1135.25
mV
1165.25
1175
1184.75
mV
180
1215.75
1225
1234.25
mV
120
1266.25
1275
1283.75
mV
1316.75
1325
1333.25
mV
1367.25
1375
1382.75
mV
180
1417.75
1425
1432.25
mV
120
1468.25
1475
1481.75
mV
1518.75
1525
1531.25
mV
1569.25
1575
1580.75
mV
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26
TONSET (kTON)
OCS (%)
120
15
13
12
11
10
9
8
7
140
160
140
160
140
160
140
160
140
160
140
160
140
160
140
160
180
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RT3601EA
For better efficiency of the given load range, the maximum
switching frequency is suggested to be :
FSW(MAX) 


VID1 IccTDC  DCR  RON_LS,max  RLL


 VIN(MAX)  IccTDC  RON_LS,max  RON_HS,max    TON  TD  TON,VAR   IccTDC  RON_LS,max  TD


where FSW(MAX) is the maximum switching frequency, VID1
is the typical VID of application, VIN(MAX) is the maximum
application input voltage, IccTDC is the thermal design
current of application. The RON_HS,max is the maximum
equivalent high-side RDS(ON), RON_LS,max is the maximum
equivalent low-side RDS(ON). TD is the summation of the
high-side MOSFET delay time and the rising time, TON,
VAR is the TON variation value. DCR is the inductor DCR,
and RLL is the loadline setting. In addition, Richtek provides
a Microsoft Excel-based spreadsheet to help design the
RTON for RT3601EA.
When load increases, on-time keeps constant. The offtime width will be reduced so that loading can load more
power from input terminal to regulate output voltage.
Hence, the loading current usually increases in case the
switching frequency also increases. Higher switching
frequency operation can reduce power components' size
and PCB space, trading off the whole efficiency since
switching related loss increases, vice versa.
IMON
RIMON
GM
+
RCS
LX
DCR
Rx
Cx
ISENP
ISENN
-
VREF
Figure 10. Lossless Current Sense Method for Single
Phase
VCORE
R x  Cx =
Lx
DCR
IOUT x RLL
IOUT
IOUT
Expected load transient waveform
VCORE
R x  Cx <
Current Sense
In the RT3601EA, the current signal is used for load-line
setting and over-current protection (OCP). The inductor
current sense method adopts the lossless current sensing
for allowing high efficiency as illustrated in Figure 10. If
RC network time constant matches inductor time constant
Lx/DCR, an expected load transient waveform can be
designed. If RxCx network time constant is larger than
inductor time constant Lx/DCR, VCORE waveform has a
sluggish droop during load transient. If RxCx network is
smaller than inductor time constant Lx/DCR, a worst VCORE
waveform will sag to create an undershooting to fail the
specification. Figure 11 shows the variety RxCx constant
corresponding to the output waveforms.
VCORE
ILx
Lx
DCR
IOUT x RLL
IOUT
IOUT
Undershoot created in VCORE
VCORE
R x  Cx >
Lx
DCR
IOUT x RLL
IOUT
IOUT
Sluggish droop
Figure 11. All Kind of RxCx Constants
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27
RT3601EA
Thermal Compensation for Current Sense
Next, let
Since the copper wire of inductor has a positive
temperature coefficient. And hence, temperature
compensation is necessary for the lossless inductor
current sense. For single phase thermal compensation,
Figure 12. shows a not only simple but also effective way
to compensate temperature variation. An NTC thermistor
is put in the current sensing network and it can be used
to compensate DCR variation due to temperature is
changed.
VCORE
ILx
LX
DCR
RX
CX
Rs
GM
VIMON
IMON
+
RCS
RIMON
ISENxP
m
LX
DCR  C X
Then
R
 RP 
RNTC  RP 

m   R X  RS  NTC
  R X   RS  R

R

R
NTC
P 
NTC  RP 


Step1 : Given the two system temperature TR and TH at
which are compensated.
Step2 : Two equations can be listed as
R
(T )  RP 
R
(T )  RP 


m(TR )   R X  RS  NTC R
 R X   RS  NTC R
RNTC (TR )  RP 
RNTC (TR )  RP 


Rp
RNTC
ISENxN
-
VREF
R
(T )  RP

m(TH )   R X  RS  NTC H
RNTC (TH )  RP

RNTC (TH )  RP 


  R X   RS  R

NTC (TH )  RP 


Step3 : Usually RP is set to equal to RNTC (TR). And hence,
there are two equations and two unknowns, RX and RS
can be found out.
Current Monitor, IMON
Figure 12. Thermal Compensation method for Single
Phase
The current sense network equation is as follows :
ILX DCR 
VIMON  VIMON  VREF 
RS  RP //RNTC 
RX  RS  RP //RNTC 
RIMON
RCS
Usually, RP is set equal to RNTC ( 25°C). RS is selected to
linearize the NTC’s temperature characteristic. For a given
NTC, design is to get RX and RS to compensate the
temperature variation of the sense resistor.
Let
REQU  RS  RP //RNTC 
According to current sense network, the corresponding
equation is represented as follows :
RT3601EA includes a current monitor (IMON) function
which can be used to detect over-current protection and
maximum processor current ICCMAX, and also sets a
part of current gain in the load-line setting. It produces an
analog voltage proportional to output current between the
IMON and VREF pins.
Load-Line (Droop) Setting
The G-NAVPTM topology can set load-line (droop) via the
current loop and voltage loop, the load-line is a slope
between load current ICC and output voltage Vsen as
shown in Figure 13. Figure 14 shows the voltage control
and current loop. By using both loops, the load-line (droop)
can be set easily. The load-line set equation is :
k i  DCR  R
k i  DCR
OUT
2 RCS
AI
RLL 

 2
(m  )
AV
R2
R2
R1
R1
where ROUT = RCS
R
 RX
LX
 C X  EQU
DCR
REQU  R X
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RT3601EA
VCOEE
C2
C1
Load line slope = -RLL
R2
-
R1
RLL x ICC
+
VID
ICC
Figure 13. Load-Line (Droop)
VSEN
Differential Remote Sense Setting
R2
Voltage Loop
TON Generator
-
R1
+
+
-
IL
LX
CX
RX
VID
ki/2
-
+
DCR
ISENP
+
GM
RCS
ISENN
1
Figure 15. Type I compensator
ROUT
1
IMONA
Current Loop
VREF
The VR provides differential remote-sense inputs to
eliminate the effects of voltage drops along the PC board
traces, CPU internal power routes and socket contacts
for Main and AUXI rails. The CPU contains on-die sense
pins, V CC_SENSE and V SS_SENSE . Connect RGND to
VSS_SENSE and connect FB to VCC_SENSE with a resistor to
build the negative input path of the error amplifier as shown
in Figure 16. The VDAC and the precision voltage reference
are referred to RGND for accurate remote sensing.
RIMON
CPU VCC_SENSE
VOUT
Compensator Design
The compensator of RT3601EA doesn't need a complex
type II or type III compensator to optimize control loop
performance. It can adopt a simple type I compensator
(one pole, one zero) in the G-NAVPTM topology to achieve
constant output impedance design for Intel IMVP8 ACLL
specification. The one pole one zero compensator is
shown as Figure 15. The transfer function of compensator
should be design as following transfer function to achieve
constant output impedance, i.e. Zo(s) = load-line slope in
the entire frequency range :
FB
EA
+
VID
+
Figure 14. Voltage Loop and Current Loop
RGND
R1
COUT
R2
CPU VSS_SENSE
Figure 16. Remote Sensing Circuit
Maximum Processor Current Setting, ICCMAX
The maximum processor current ICCMAX can be set by
SET1 pin. ICCMAX register is set by an external voltage
divider with the multi-function mechanism. Table 2 shows
the ICCMAX setting on SET1 pin.
s
1
AI

fsw

GCON (S) 
RLL 1 s
ESR
where AI is current loop gain, RLL is load-line, fSW is
switching frequency and ωESR is a pole that should be
located at 1/(COUT x ESR). Then, the C1 and C2 should
be designed as follows :
C
 ESR
1
C1 =
C2 = OUT
R1   fSW
R2
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RT3601EA
Table 4. SET1 Pin Setting for PSYS and DVID_Width
VSET1 = 80μA x
R1 x R2
R1 + R2
PSYS
DVID_Width (s)
Min
Typical
Max
Unit
5.5
100
194.5
mV
Enable
5.36
209.5
300
390.5
mV
Enable
4.69
413.5
500
586.5
mV
Enable
2.68
617.5
700
782.5
mV
Enable
2.01
821.5
900
978.5
mV
Disable
5.36
1025.5
1100
1174.5
mV
Disable
4.69
1229.5
1300
1370.5
mV
Disable
2.68
1433.5
1500
1566.5
mV
Disable
2.01
Table 5. TSEN Setting for DVID_TH and VBOOT
VTSEN  VREF 
R2
R1 R2
DVID_TH (mV)
VBOOT (V)
Min
Typical
Max
Unit
4
50
96
mV
105
150
195
mV
206
250
294
mV
307
350
393
mV
1.35
408
450
492
mV
0
509
550
591
mV
610
650
690
mV
711
750
789
mV
1.35
812
850
888
mV
0
913
950
987
mV
1014
1050
1086
mV
1115
1150
1185
mV
1.35
1216
1250
1284
mV
0
1317
1350
1383
mV
1418
1450
1482
mV
1519
1550
1581
mV
0
15
30
60
Disable
1.05
1.2
1.05
1.2
1.05
1.2
1.05
1.2
1.35
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Dynamic VID (DVID) Compensation
When VID transition event occurs, a charge current will
be generated in the loop to cause DVID performance is
deteriorated by this induced charge current, the
phenomenon is called droop effect. The droop effect is
shown in Figure 17. When VID up transition occurs, the
output capacitor will be charged by inductor current. Since
current signal is sensed in inductor, an induced charge
current will appear in control loop. The induced charge
current will produce a voltage drop in R1 to cause output
voltage to have a droop effect. Due to this, VID transition
performance will be deteriorated.
The RT3601EA provides a DVID compensation function.
By the DVID compensation to cancel the real induced
charge current signal and the virtual charge current signal
is defined in Figure 18. Figure 19 shows the operation of
cancelling droop effect. A virtual charge current signal is
established first and then VID signal plus virtual charge
current signal to be generated on the FB pin. Hence, an
induced charge current signal flows to R1 and is cancelled
to reduce droop effect.
DVID_Width
DVID_Threshold
Charge current
L
VIN
Q1
Gate
Driver
CO1
Q2
CO2
RESR
Figure 18. Definition of Virtual Charge Current Signal
CPU
Ai
Induced charge
current signal
C2
R2
CCRCOT
VIN
VID
tON
Output voltage
C1
COMP +
R1
EA
+
IDROOP
VID
VID Transition
Figure 17. Droop Effect in VID transition
Charge current
VIN
L
Q1
Gate
Driver
CO1
Q2
CO2
RESR
Ai
Induced charge
current signal
Output voltage
CPU
C2
C1
R2
CCRCOT
COMP -
VIN
VID
tON
+
IDROOP
R1
EA
+
Virtual Charge Current
+
DVID Event
Slew Rate
Control
VID
VID Transition
Virtual Charge
Current
Generator
Figure 19. DVID Compensation
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RT3601EA
Table 4 and Table 5 show the DVID width, DVID threshold,
PSYS function and VBOOT on SET1 and TSEN. For
example, 15mV DVID threshold and 2.68μs DVID width
are designed (VBOOT set as 1.05V, PSYS function is
disable) . According to the Table 4 adn Table 5, the DVID
threshold set voltage should be between 0.1286V and
0.1316V and DVID width set voltage should be between
0.1351V to 0.1651V. Please note that a high accuracy
resistor is needed for this setting, <1% error tolerance is
recommended.
Ramp Compensation
The G-NAVPTM topology is one type of ripple based control
that has fast transient response and can lower BOM cost.
However, ripple based control usually has no good noise
immunity. The RT3601EA provides the ramp compensation
to increase noise immunity and reduce jitter at the
switching node. Figure 20 shows the ramp compensation.
Noise Margin
w/o ramp compensation
IMON-VREF
VCOMP
Noise Margin
w/ ramp compensation
QR Width
VCORE
QR Threshold
PWM1
PWM2
Load
Figure 21. Quick Response Mechanism
The output voltage signal behavior needs to be detected
so that QR mechanism can be trigged. The output voltage
signal is via a remote sense line to connect at the VSEN
pin which is shown in Figure 22. The QR mechanism needs
to set QR width and QR threshold. Both definitions are
shown in Figure 21. A proper QR mechanism set can meet
different applications. The SET3 pin can set QR threshold
and QR width by an external voltage divider with the multifunction mechanism. Table 6 shows the QR_TH and
QR_WIDTH on the SET3 pin.
IMON-VREF
VCOMP
Figure 20. Ramp Compensation
Quick Response (QR) Mechanism
QR Pulse
Generation
Circuit
+-
+
COM
VSEN
QR
threshold
+
-
Figure 22. Simplified QR Trigger schematic
When the transient load step-up becomes quite large, it
is difficult for loop response to meet the energy transfer.
Hence, that output voltage generate undershoot to fail
specification. The RT3601EA has Quick Response (QR)
mechanism being able to improve this issue. It adopts a
nonlinear control mechanism which can disable
interleaving function and simultaneously turn on all UGATE
one pulse at instantaneous step-up transient load to
restrain the output voltage drooping. Figure 21 shows the
QR behavior.
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Table 6. SET3 Pin Setting for QR Threshold and QR Width
VSET3  VREF 
R2
R1 R2
QR_TH (mV)
Min
Typical
Max
Unit
3.75
25
46.25
mV
54.25
104.75
75
125
95.75
145.25
mV
mV
155.25
205.75
175
225
194.75
244.25
mV
mV
256.25
275
293.75
mV
306.75
325
343.25
mV
PS0
PS1
QR_WIDTH
(% of On-Time)
160%
Disable
Disable
130%
100%
70%
160%
10
10
130%
100%
357.25
375
392.75
mV
70%
407.75
458.25
425
475
442.25
491.75
mV
mV
160%
130%
508.75
559.25
525
575
541.25
590.75
mV
mV
609.75
660.25
625
675
640.25
689.75
mV
mV
710.75
725
739.25
mV
761.25
775
788.75
mV
70%
811.75
862.25
825
875
838.25
887.75
mV
mV
160%
130%
912.75
925
937.25
mV
963.25
1013.75
975
1025
986.75
1036.25
mV
mV
1064.25
1075
1085.75
mV
1114.75
1125
1135.25
mV
1165.25
1215.75
1175
1225
1184.75
1234.25
mV
mV
1266.25
1316.75
1275
1325
1283.75
1333.25
mV
mV
1367.25
1417.75
1375
1425
1382.75
1432.25
mV
mV
1468.25
1475
1481.75
mV
1518.75
1569.25
1525
1575
1531.25
1580.75
mV
mV
15
20
25
15
20
25
100%
70%
160%
130%
100%
100%
70%
160%
30
30
130%
100%
70%
160%
35
35
130%
100%
70%
160%
40
40
130%
100%
70%
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RT3601EA
For example, 20mV QR threshold and 0.7 x TON QR width
are set. According to Table 6, the set voltage should be
between 0.7607V and 0.7907V. Please note that a high
accuracy resistor is needed for this setting accuracy, <1%
error tolerance is recommended.
Zero Load-Line Setting and Anti-overshoot function
The SET2 pin can be enabled/disabled zero load-line
function and can be enabled/disabled anti-overshoot
function. Table 7 and Table 8 show the zero load-line
function, anti-overshoot function, IPSK and anti-overshoot
threshold on SET2 pin and SET3 pin.
When DVID slew rate increases, loop response is difficult
to meet energy transfer so that output voltage generates
overshoot to fail specification. The RT3601EA has antiovershoot function being able to help improve this issue.
The VR will turn off low-side MOSFET when output voltage
ramps up to the target VID (ALERT signal be pulled low).
This function also can improve the overshoot during the
load transient condition. When anti-overshoot function is
triggered, the UGATE and LGATE signal will be masked
to reduce the overshoot amplitude.
Table 7. SET2 Pin Setting for Anti-Overshoot and Zero Load-Line
VSET2  80μA 
R1 R2
R1 R2
VR
Zero Load-Line
Address
Min
Typical
Max
Unit
4.5
50
95.5
mV
106.5
150
193.5
mV
208.5
250
291.5
mV
310.5
350
389.5
mV
412.5
450
487.5
mV
514.5
550
585.5
mV
616.5
650
683.5
mV
718.5
750
781.5
mV
820.5
850
879.5
mV
922.5
950
977.5
mV
1024.5
1050
1075.5
mV
1126.5
1150
1173.5
mV
1228.5
1250
1271.5
mV
1330.5
1350
1369.5
mV
1432.5
1450
1467.5
mV
1534.5
1550
1565.5
mV
Disable
00
Enable
Disable
01
Enable
Disable
02
Enable
Disable
03
Enable
ANTIOVS
Disable
Enable
Disable
Enable
Disable
Enable
Disable
Enable
Disable
Enable
Disable
Enable
Disable
Enable
Disable
Enable
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RT3601EA
Table 8. SET3 Pin Setting for IPSK and ANTIOVS_TH
VSET3  80μA 
R1 R2
R1 R2
IPSK
ANTIOVS_TH(mV)
Min
Typical
Max
Unit
4.5
50
95.5
mV
106.5
150
193.5
mV
208.5
250
291.5
mV
310.5
350
389.5
mV
40
412.5
450
487.5
mV
10
514.5
550
585.5
mV
616.5
650
683.5
mV
718.5
750
781.5
mV
40
820.5
850
879.5
mV
10
922.5
950
977.5
mV
1024.5
1050
1075.5
mV
1126.5
1150
1173.5
mV
40
1228.5
1250
1271.5
mV
10
1330.5
1350
1369.5
mV
1432.5
1450
1467.5
mV
1534.5
1550
1565.5
mV
10
150mV / Avgain
100mV / Avgain
50V / Avgain
0mV / Avgain
20
30
20
30
20
30
20
30
40
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RT3601EA
Over-Current Protection
Under-Voltage Protection
The RT3601EA has dual OCP mechanism. One is named
SUM-OCP, the other is called per phase OC. The over
current protection (OCP) forces high-side MOSFET and
low-side MOSFET off by shutting down internal PWM logic
drivers. RT3601EA provides SUM-OCP which is 160% of
IMON_04. IMON_04 is the current that makes VIMON − VREF =
0.4. When output current is higher than the SUM-OCP
threshold, SUM-OCP is latched with a 40μs delay time
to prevent false trigger. Besides, the SUM-OCP function
is masked when dynamic VID transient occurs and after
dynamic VID transition, SUM-OCP is masked for 80μs.
The other one is SPIKE-OCP which should trip when the
output current exceeds per phase OC threshold during
first DVID. Per phase OC threshold is dependent on IMAX
level as shown in Table 2. When output current is higher
than the per phase OC threshold, SPIKE-OCP is latched
with a 0.5μs delay time to prevent false trigger.
When the VSEN pin voltage is 350mV less than VID, UVP
will be latched. When UVP latched, the both UGATEx
and LGATEx are pulled low. A 3μs delay is used in UVP
detection circuit to prevent false trigger. Besides, the UVP
function is masked when dynamic VID transient occurs
and after dynamic VID transition, UVP is masked for 80μs.
Design Step :
RT3601EA Excel based design tool is available. Users
can contact your Richtek representative to get the
spreadsheet. Three main design procedures of RT3601EA
design, first step is loop design, second step is pin setting
design, and the last step is protection settings. The
following design example is to explain RT3601EA design
procedure :
Specification
Input Voltage
19V
No. of Phase
1
Normal VID
1.3V
ICCMAX
22A
Load-Line
6m
Fast Slew Rate
MAX Switching
Frequency
33.75mV/s
Output Over-Voltage Protection
There are two conditions for OVP. Oneis when VSEN is
respect to VID voltage. The other is when VSEN is lower
limit to 1V. For VSEN is respect to VID voltage, OVP
condition is detected when VSEN pin is 350mV more than
VID. For VSEN is lower limit to 1V, OVP is occurred when
VSEN is higher than 1V. When OVP is detected, the highside gate voltage UGATEx is pulled low and the low-side
gate voltage LGATEx is pulled high. OVP is latched with
a 0.5us delay- to prevent false trigger.
600kHz
The output filter requirements of VRTB specification are
as follows :
Output Inductor : 0.22μH/0.875mΩ
Negative Voltage Protection
Output Ceramic Capacitor : 396μF (18pcs)
Since the OVP latch continuously turns on all low-side
MOSFETs of the VR, the VR will suffer negative output
voltage. When the VSEN detects a voltage below −0.05V
after triggering OVP, the VR triggers NVP to turn off all
low-side MOSFETs of the VR while the high-side
MOSFETs remain off. After triggering NVP, if the output
voltage rises above 0V, the OVP latch restarts to turn on
all low-side MOSFETs. Therefore, the output voltage may
bounce between 0V and −0.05V due to OVP latch and
NVP triggering. The NVP function will be active only after
OVP is triggered.
Loop Design :
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On time setting: Using the specification, then can get
that TON is 160ns.

The kTON parameter can be calculated after the on-time
is decided.
TON 
26.2μ  VDAC
 15n
k TON  (VIN  0.9)
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RT3601EA
22A. The PSYS function is decided to Enable and DVID
width is set to 5.36μs. By using the information, the
two equation can be listed by using multi-function pin
setting mechanism :
Choosing the nearest on-time setting kTON = 13
Current sensor adopts lossless RC filter to sense current
signal in DCR. For getting an expected load transient
waveform RXCX time constant needs to match LX/DCR.
CX = 0.47μF, RNTC = 4.7kΩ and RP = 4.7kΩ are set,
then

3.2 
REQU  RS  RP //RNTC 
80μ 
R
 RX
LX
 C X  EQU
DCR
REQU  R X
R1 = 3.01kΩ and R2 = 2.13kΩ.
By using the design tool, RS and RX can be determined,
are equal to 845Ω and 768Ω, respectively.

IMON resistor network design :

RIMON 

∆VIMON  2.15k
 58k
REQU
ICCMAX  DCR 
R X  REQU
Load-line design : 6mΩ droop is requirement, because
DCR and ki are decided to 0.875mΩ and 80, respectively
(ki = AI Gain). The voltage loop Av gain is also can be
determined by following equation :
RLL 
ki  DCR
AI
 2
AV
R2
R1
R2
 225.22mV
R1  R2
80μ 

SET3 resistor network design : From above designs,
the QR_TH is set to 20mV and QR width is designed as
0.7 x TON. The IPSK is set to 100mV/Avgain and
ANTIOVS_TH is set to 20mV. By using the information,
the two equation can be listed by using multi-function
pin setting mechanism :
R2
 775.75mV
R1  R2
C1 
1
 270pF
R1  π  FSW
3.2 
C2 
COUT  ESR
 47pF
R2
80μ 
Pin Setting Design :
R1  R2
 150.14mV
R1  R2
R1 = 26.66kΩ and R2 = 2.01kΩ.
Typical compensator design can use the following
equations to design C1 and C2 values
For Intel platform, in order to induce the band width to
enhance transient performance to meet Intel's criterion,
the zero location can be designed close to 1/10 of the
switching frequency or less than the 1/10 of switching
frequency.
R1  R2
 100.09mV
R1  R2
SET2 resistor network design : From above designs,
parameters of kTON is 13. The OCP threshold is designed
as 1.2 x ICCMAX. The zero load-line function is decided
to disable and anti-overshoot is decided to enable. The
VR address is set to 0. By using the information, the
two equation can be listed by using multi-function pin
setting mechanism:
3.2 
R1 = 10kΩ is usually decided and here R2 is chosen to
47kΩ.

R2
 1326.29mV
R1  R2
R1  R2
 550.53mV
R1  R2
R1 = 28.38kΩ and R2 = 9.08kΩ.

TSEN resistor network design : The DIVD threshold is
30mV and the Boot voltage is set to 0V. By using the
information, the equation can be shown as below :
3.2 
R2
 450.44mV
R1  R2
SET1 resistor network design: From above designs,
parameter of AI Gain is 80. The ICCMAX is designed as
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS3601EA-00 June 2016
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
37
RT3601EA


OVP/UVP protections: When the VSEN pin voltage is
350mV higher than VID, the OVP will be latched. When
the VSEN pin voltage is 350mV lower than VID, the
UVP will be latched.
TSEN and VR_HOT design : Using the following equation
to calculate related resistances for VR_HOT setting.
VTSEN  80μ  (R3 //RNTC )  (R1 //R2 )
NTC thermistor RNTC (25°C) = 100kΩ and its β = 4485.
When temperature is 100°C, the RNTC (90°C) = 6.75kΩ.
According to TSEN pins for multi-function mechanism,
three equations can be got as following for Main VR rail
:
VTSEN (25oC)  80μ  (R3 //RNTC (25oC) )  (R1 //R2 )  1.624V
VTSEN (90oC)  80μ  (R3 //RNTC (100oC) )  (R1 //R2 )  1.092V
3.2 
R2
 450.44mV
R1  R2
R1 = 54.83kΩ, R2 = 8.98kΩ and R3 = 48.7kΩ.
The maximum power dissipation depends on the operating
ambient temperature for fixed T J(MAX) and thermal
resistance, θJA. The derating curve in Figure 23 allows
the designer to see the effect of rising ambient temperature
on the maximum power dissipation.
5.0
Maximum Power Dissipation (W)1
Protection Settings :
Four-Layer PCB
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 23. Derating Curve of Maximum Power
Dissipation
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
ambient thermal resistance, θJA, is layout dependent. For
WQFN-28L 4x4 package, the thermal resistance, θJA, is
28.5°C/W on a standard JEDEC 51-7 four-layer thermal
test board. The maximum power dissipation at TA = 25°C
can be calculated by the following formula :
PD(MAX) = (125°C − 25°C) / (28.5°C/W) = 3.5W for
WQFN-28L 4x4 package
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
www.richtek.com
38
is a registered trademark of Richtek Technology Corporation.
DS3601EA-00 June 2016
RT3601EA
Outline Dimension
D2
D
SEE DETAIL A
L
1
E
E2
e
Symbol
A3
2
2
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.150
0.250
0.006
0.010
D
3.900
4.100
0.154
0.161
D2
2.350
2.450
0.093
0.096
E
3.900
4.100
0.154
0.161
E2
2.350
2.450
0.093
0.096
e
L
1
DETAIL A
Pin #1 ID and Tie Bar Mark Options
b
A
A1
1
0.400
0.350
0.016
0.450
0.014
0.018
W-Type 28L QFN 4x4 Package
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
DS3601EA-00 June 2016
www.richtek.com
39