CD4010BMS November 1994 CMOS Hex Buffer/Converter Features CD4010BMS Hex Buffer/Converter may be used as CMOS to TTL or DTL logic-level converter or CMOS high-sink-current driver. • Non-Inverting Type The CD4050B is the preferred hex buffer replacement for the CD4010BMS in all applications except multiplexers.The CD4010BMS is supplied in these 16 lead outline packages: File Number 3078 • High-Voltage Type (20V Rating) • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Package-Temperature Range; - 100nA at 18V and +25oC Braze Seal DIP H4S Frit Seal DIP H1E Ceramic Flatpack H6W • 5V, 10V and 15V Parametric Ratings Applications • CMOS To DTL/TTL Hex Converter • CMOS Current “Sink” or “Source” Driver • CMOS High-to-Low Logic-Level Converter • Multiplexer - 1 to 6 or 6 to 1 Pinout Functional Diagram CD4010BMS TOP VIEW 3 2 A VCC 1 16 VDD G=A 2 15 L = F G=A 5 4 B H=B 14 F A 3 13 NC H=B 4 7 6 C B 5 I=C 12 K = E 11 E I=C 6 9 10 J = D C 7 9 D VSS 8 NC 13 1 VCC NC = NO CONNECTION 10 D J=D 11 12 E K=E 8 VSS 16 VDD 14 F 15 L=F NC = NO CONNECTION 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CD4010BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance. . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD TEMPERATURE MIN MAX UNITS 1 +25oC - 2 µA 2 +125oC - 200 µA 3 -55oC - 2 µA 1 +25oC -100 - nA 2 +125oC -1000 - nA VDD = 18V 3 -55oC -100 - nA VDD = 20 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA - 50 mV 14.95 - V CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current Input Leakage Current IIL IIH VIN = VDD or GND VIN = VDD or GND LIMITS GROUP A SUBGROUPS VDD = 20 VDD = 18V Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC +25oC, +125oC, -55oC Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 3.0 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 8.0 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 24.0 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.2 mA - -0.8 mA - -0.45 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.5 mA -2.8 -0.7 V 0.7 2.8 V Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC VSS = 0V, IDD = 10µA 1 +25oC VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC P Threshold Voltage Functional VPTH F Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs 4-2 VOH > VOL < VDD/2 VDD/2 1.5 3.5 V V 4 11 V V V 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. CD4010BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Propagation Delay Transition Time Transition Time SYMBOL TPHL TPLH TTHL TTLH CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND VDD = 5V, VIN = VDD or GND VDD = 5V, VIN = VDD or GND VDD = 5V, VIN = VDD or GND LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC - 130 ns 10, 11 +125oC, -55oC - 175 ns 9 +25oC - 200 ns 10, 11 +125oC, -55oC - 270 ns 9 +25oC - 70 ns 10, 11 +125oC, -55oC - 94 ns 9 +25oC - 350 ns 10, 11 +125oC, -55oC - 473 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND NOTES TEMPERATURE MIN MAX UNITS 1, 2 -55oC, +25oC - 1 µA +125oC - 30 µA -55oC, +25oC - 2 µA +125oC - 60 µA -55oC, +25oC - 2 µA +125oC 1, 2 1, 2 - 120 µA Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, 55oC - 50 mV Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, 55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, 55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, 55oC 9.95 - V Output Current (Sink) IOL4 VDD = 4.5V, VOUT = 0.4V 1, 2 +25oC 2.6 - mA Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 4-3 VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 +125oC 1.8 - mA -55oC 3.2 - mA +125oC 2.1 - mA -55oC 3.75 - mA +125oC 5.6 - mA -55oC 10.0 - mA +125oC 16.0 - mA -55oC 30.0 - mA +125oC - -0.15 mA -55oC - -0.25 mA +125oC - -0.58 mA -55oC - -1.0 mA +125oC - -0.33 mA -55oC - -0.55 mA +125oC - -1.1 mA -55oC - -1.65 mA CD4010BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS - 3 V Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, 55oC Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, 55oC 7 - V Propagation Delay TPHL VDD = 10V, VCC = 10V 1, 2, 3 +25oC - 70 ns VDD = 15V, VCC = 15V 1, 2, 3 +25oC - 50 ns VDD = 10V, VCC = 10V 1, 2, 3 +25oC - 100 ns VDD = 15V, VCC = 15V 1, 2, 3 +25oC - 70 ns VDD = 10V, VCC = 5V 1, 2, 3 +25oC - 70 ns VDD = 15V, VCC = 5V 1, 2, 3 +25oC - 40 ns VDD = 10V, VCC = 5V 1, 2, 3 +25oC - 100 ns VDD = 15V, VCC = 5V 1, 2, 3 +25oC - 70 ns VDD = 10V 1, 2, 3 +25oC - 40 ns VDD = 15V 1, 2, 3 +25oC - 30 ns VDD = 10V 1, 2, 3 +25oC - 150 ns VDD = 15V 1, 2, 3 +25oC - 110 ns 1, 2 +25oC - 7.5 pF Propagation Delay Propagation Delay Propagation Delay Transition Time Transition Time Input Capacitance TPLH TPHL TPLH TTHL TTLH CIN Any Input NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD CONDITIONS VDD = 20V, VIN = VDD or GND NOTES TEMPERATURE MIN MAX UNITS 1, 4 +25oC - 7.5 µA VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V ∆VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V VPTH VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V ∆VPTH VSS = 0V, IDD = 10µA 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns F VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V, VCC = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD ± 0.2µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) 4-4 CD4010BMS TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD CONFORMANCE GROUP GROUP A SUBGROUPS READ AND RECORD Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RON Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RON 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RON 100% 5004 1, 7, 9, Deltas Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test 1, 7, 9 1, 7, 9, Deltas IDD, IOL5, IOH5A, RON 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 Group A Group B 100% 5004 100% 5004 Group D Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 (Note 1) 2, 4, 6, 10, 12, 13, 15 3, 5, 7 - 9, 11, 14 Static Burn-In 2 (Note 1) 2, 4, 6, 10, 12, 13, 15 8 1, 3, 5, 7, 9, 11, 14, 16 Dynamic Burn-In (Note 3) 13 8 1, 16 2, 4, 6, 10, 12, 13, 15 8 1, 3, 5, 7, 9, 11, 14, 16 Irradiation (Note 2) 9V ± -0.5V 50kHz 2, 4, 6, 10, 12, 15 3, 5, 7, 9, 11, 14 25kHz 1, 16 NOTES: 1. Each pin except VDD and Pin 1 and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and Pin 1 and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 3. Each pin except VDD and Pin 1 and GND will have a series resistor of 4.75K ± 5%, VDD = 18V ± 0.5V Schematic Diagram VDD VCC *ALL INPUTS ARE PROTECTED CONFIGURATION: HEX COS/MOS TO DTL OR TTL CONVERTER (NON-INVERTING) BY CMOS PROTECTION NETWORK VDD P N P * INPUT VDD GND OUTPUT N N WIRING SCHEDULE: CONNECT VCC TO DTL OR TTL SUPPLY CONNECT VDD TO COS/MOS SUPPLY VSS 4-5 VCC GND VSS CD4010BMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC COLLECTOR SUPPLY VOLTAGE (VCC) = +5V DRAIN SUPPLY VOLTAGE (VDD) = +10V AMBIENT TEMPERATURE (TA) = +25oC 5 OUTPUT VOLTAGE (VO) 5 VI VO 4 3 MIN MAX 2 1 1 2 3 4 5 INPUT VOLTAGE (VI) VO 2 MIN 0 FIGURE 1. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS (VDD = 5) 2 MAX OUTPUT VOLTAGE (VD) 4 3 MIN 6 8 10 INPUT VOLTAGE (VI) COLLECTOR SUPPLY VOLTAGE (VCC) = +5 5 2 4 FIGURE 2. MINIMUM AND MAXIMUM VOLATGE TRANSFER CHARACTERISTICS (VDD = 10) AMBIENT TEMPERATURE (TA) = +25oC COLLECTOR SUPPLY VOLTAGE (VCC) = +5V DRAIN SUPPLY VOLTAGE (VDD) = +15V 5 OUTPUT VOLTAGE (VO) VI 3 1 0 MAX 4 3 2 = (TA) +125oC = (TA) - 55oC +10V +15V 1 1 VI 2 4 6 8 10 INPUT VOLTAGE (VI) VO 12 2 AMBIENT TEMPERATURE (TA) = +25oC TYPICAL TEMPERATURE COEFFICIENT FOR ID = -0.3%/oC 100 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 60 10V 40 20 5V 2 4 6 8 10 12 DRAIN-TO-SOURCE VOLTS (VDS) 14 FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 4-6 6 8 10 12 14 FIGURE 4. TYPICAL VOLATGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE AMBIENT TEMPERATURE (TA) = +25oC 60 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 50 40 30 10V 20 10 5V 0 0 4 INPUT VOLTAGE (VI) FIGURE 3. MINIMUM AND MAXIMUM VOLATGE TRANSFER CHARACTERISTICS (VDD = 15) 80 0 15 OUTPUT LOW (SINK) CURRENT (IOL) (mA) 0 OUTPUT LOW (SINK) CURRENT (IOL) (mA) 4 SUPPLY VOLTS (VDD) = +5 OUTPUT VOLTAGE (VO) COLLECTOR SUPPLY VOLTAGE (VCC) = 5V DRAIN SUPPLY VOLTAGE (VDD) = 5V 5 10 15 20 DRAIN-TO-SOURCE VOLTS (VDS) FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS CD4010BMS Typical Performance Characteristics (Continued) -4 -3 -2 -1 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -1 -2 -3 -4 -5 -6 -10V -7 -8 -9 -10 -15V -11 AMBIENT TEMPERATURE (TA) = +25oC -12 120 AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 5V 80 10V 60 15V 40 20 0 20 40 60 80 100 120 LOAD CAPACITANCE (CL) (pF) LOW-TO-HIGH TRANSITION TIME (tPLH) (ns) FIGURE 9. TYPICAL LOW-TO-HIGH PROPAGATION DELAYTIME vs LOAD CAPACITANCE -6 200 10V 15V 50 20 40 60 80 100 -1 0 -4 -6 -15V -8 -10 AMBIENT TEMPERATURE (TA) = +25oC -12 FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 80 AMBIENT TEMPERATURE (TA) = +25oC 70 60 SUPPLY VOLTAGE (VDD) = 5V 50 10V 40 30 15V 20 10 0 10 20 30 40 50 60 70 80 90 100 LOAD CAPACITANCE (CL) (pF) FIGURE 10. TYPICAL HIGH-TO-LOW PROPAGATION DELAYTIME vs LOAD CAPACITANCE 60 SUPPLY VOLTAGE (VDD) = 5V 50 40 10V 30 20 15V 10 10 20 30 40 50 60 70 80 90 100 120 LOAD CAPACITANCE (CL) (pF) FIGURE 11. TYPICAL LOW-TO-HIGH TRANSITION TIME vs LOAD CAPACITANCE 4-7 -2 -10V 0 0 -3 AMBIENT TEMPERATURE (TA) = +25oC 250 SUPPLY VOLTAGE (VDD) = 5V 100 -4 -2 AMBIENT TEMPERATURE (TA) = +25oC 150 -5 GATE-TO-SOURCE VOLTAGE (VGS) = -5V HIGH-TO-LOW TRANSITION TIME (tTHL) (ns) LOW-TO-HIGH PROPAGATION DELAY TIME (tPLH) (ns) FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 100 -7 HIGH-TO-LOW PROPAGATION DELAY TIME (tPHL) (ns) -5 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -6 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -7 LOAD CAPACITANCE (CL) (pF) FIGURE 12. TYPICAL HIGH-TO-LOW TRANSITION TIME vs LOAD CAPACITANCE CD4010BMS Typical Performance Characteristics (Continued) POWER PER INVERTER/BUFFER (µW) 104 8 6 4 AMBIENT TEMPERATURE (TA) = +25oC 2 SUPPLY VOLTAGE (VDD) = 15V 1038 10V 6 4 10V 2 102 5V 8 6 4 LOAD CAPACITANCE (CL) = 50pF CL = 15pF 2 10 10 2 4 6 8 2 4 6 8 102 103 INPUT FREQUENCY (fφ) kHz 2 4 6 8 104 FIGURE 13. TYPICAL DISSIPATION CHARACTERISTICS Chip Dimensions and Pad Layouts METALLIZATION: Thickness: 11kÅ − 14kÅ, AL. PASSIVATION: 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 4-8 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029