isl70444seh neutron test report

Test Report 008
Neutron Testing of the ISL70444SEH Quad Operational
Amplifier
Introduction
Test Description
This report summarizes results of 1MeV equivalent neutron
testing of the ISL70444SEH quad operational amplifier
(op amp). The test was conducted in order to determine the
sensitivity of the part to the Displacement Damage (DD)
caused by the neutron environment. Neutron fluences ranged
from 5x1011n/cm2 to 1x1014n/cm2 in an approximately
logarithmic sequence. This project was carried out in
collaboration with Honeywell Aerospace (Clearwater, FL), and
their support is gratefully acknowledged.
Irradiation Facility
Part Description
The ISL70444SEH features four low-power operational
amplifiers optimized to provide maximum dynamic range.
These op amps feature a unique combination of rail-to-rail
operation on the input and output as well as a slew rate
enhanced front end, providing ultra fast slew rates that are
proportional to a given step size, increasing accuracy under
transient conditions. The part also offers low power, low input
offset voltage and low temperature drift, making it ideal for
applications requiring both high DC accuracy and AC
performance. With <5µs recovery from single-event transients
(SET) at an LET of 86.4MeV•cm2/mg), the number of external
filtering components needed is drastically reduced. The
ISL70444SEH is also immune to single-event latch-up (SEL) as
it is fabricated in Intersil’s proprietary PR40 Silicon On
Insulator (SOI) process. The part is designed to operate over a
single supply range of 2.7V to 40V or a split supply voltage
range of ±1.35V to ±20V. Applications for these amplifiers
include precision payload instrumentation, data acquisition
and precision power supply controls. The ISL70444SEH is
available in a 14 Ld hermetic ceramic flatpack or in die form. It
offers guaranteed performance over the full -55°C to +125°C
military temperature range. Key pre- and post-radiation
specifications follow, with parametric limits shown for ±18V
supplies.
• Input offset voltage. . . . . . . . . . . . . . ±400µV post-irradiation
• Input offset voltage TC . . . . . . . . . . . . . . . . . .0.5µV/°C typical
• Input bias current (VCM = 0V) . . . . . . 370nA post-irradiation
• Supply current, per channel. . . . . . . . .2.4mA post-irradiation
• Gain-bandwidth product . . . . . . . . . . . . . . . . . . 19MHz typical
• Slew rate . . . . . . . . . . . . . . . . . . . . . . . 60V/µs post-irradiation
Neutron irradiation was performed by the Honeywell team at
the Fast Burst Reactor facility at White Sands Missile Range
(White Sands, NM), which provides a controlled 1MeV
equivalent neutron flux. Parts were tested in an unbiased
configuration with all leads open. As neutron irradiation
activates many of the elements found in a packaged
integrated circuit, the parts exposed at the higher neutron
levels required (as expected) significant 'cooldown time' before
being shipped back to Intersil (Palm Bay, FL) for electrical
testing.
Characterization Equipment
Electrical testing was performed before and after irradiation
using the Intersil production Automated Test Equipment (ATE).
All electrical testing was performed at room temperature.
Experimental Matrix
Testing proceeded in general accordance with the guidelines
of MIL-STD-883 Test Method 1017. The experimental matrix
consisted of five samples irradiated at 5x1011 n/cm2, five
samples irradiated at 2x1012n/cm2, five samples irradiated
at 1x1013n/cm2 and five samples irradiated at 1x1014n/cm2.
Two control units were used.
Results
Test Results
Neutron testing of the ISL70444SEH is complete and the
results are reported in the balance of this report. It should be
realized when reviewing the data that each neutron irradiation
was made on a different 5-unit sample; this is not total dose
testing, where the damage is cumulative.
Variables Data
The plots in Figures 1 through 12 show data plots for key
parameters before and after irradiation to each level. The plots
show the average, minimum and maximum of each parameter
for each of the four amplifier channels as a function of neutron
irradiation. We show the post - total dose irradiation electrical
limits taken from the SMD for reference only, as the
ISL70444SEH is not specified for neutron irradiation.
• Operating temperature range . . . . . . . . . . . -55°C to +125°C
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Test Report 008
15
SPEC LIMIT
POWER SUPPLY CURRENT (mA)
10
5
Isp AVG
Isp MIN
Isp MAX
Isn AVG
Isn MIN
Isn MAX
0
-5
-10
SPEC LIMIT
-15
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 1. ISL70444SEH positive and negative power supply current, sum of all four channels, as a function of neutron irradiation, showing the
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2,
1x1013n/cm2 and 1x1014 n/cm2), with two control units. The post-total dose irradiation SMD limits are -9.6mA and +9.6mA.
1000
800
INPUT OFFSET VOLTAGE (µV)
600
SPEC LIMIT
400
VOSA AVG
VOSA MIN
VOSA MAX
VOSB AVG
VOSB MIN
VOSB MAX
VOSC AVG
VOSC MIN
VOSC MAX
VOSD AVG
VOSD MIN
VOSD MAX
200
0
-200
-400
SPEC LIMIT
-600
PRE-RAD
1.00E+12
1.00E+13
1.00E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 2. ISL70444SEH input offset voltage as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of
the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and 1x1014n/cm2), with
two control units. The post-total dose irradiation SMD limits are -400.0µV to +400.0µV.
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Test Report 008
800
SPEC LIMIT
POSITIVE INPUT BIAS CURRENT (nA)
600
400
200
0
IB+A AVG
IB+A MIN
IB+A MAX
IB+B AVG
IB+B MIN
IB+B MAX
IB+C AVG
IB+C MIN
IB+C MAX
IB+D AVG
IB+D MIN
IB+D MAX
-200
-400
-600
SPEC LIMIT
-800
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 3. ISL70444SEH positive input bias current as a function of neutron irradiation, each channel, showing the mean, minimum and
maximum of the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and
1x1014n/cm2), with two control units. The post-total dose irradiation SMD limits are -650.0nA to +650.0nA.
800
SPEC LIMIT
NEGATIVE BIAS CURRENT ( nA)
600
400
200
IB-A AVG
IB-A MIN
IB-A MAX
IB-B AVG
IB-B MIN
IB-B MAX
IB-C AVG
IB-C MIN
IB-C MAX
IB-D AVG
IB-D MIN
IB-D MAX
0
-200
-400
-600
SPEC LIMIT
-800
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 4. ISL70444SEH negative input bias current as a function of neutron irradiation, each channel, showing the mean, minimum and
maximum of the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and
1x1014n/cm2), with two control units. The post-total dose irradiation SMD limits are -650.0nA to +650.0nA.
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Test Report 008
60
INPUT OFFSET CURRENT (nA)
40
20
SPEC LIMIT
0
IOSA AVG
IOSA MIN
IOSA MAX
IOSB AVG
IOSB MIN
IOSB MAX
IOSC AVG
IOSC MIN
IOSC MAX
IOSD AVG
IOSD MIN
IOSD MAX
SPEC LIMIT
-20
-40
-60
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 5. ISL70444SEH input offset current as a function of neutron irradiation, each channel, showing the mean, minimum and maximum of
the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and 1x1014n/cm2), with
two control units. The post-total dose irradiation SMD limits are -17.0nA to +17.0nA.
180
SPEC LIMIT
160
OUTPUT HIGH VOLTAGE ( mV)
140
120
100
80
VOHA AVG
VOHA MIN
VOHA MAX
VOHB AVG
VOHB MIN
VOHB MAX
VOHC AVG
VOHC MIN
VOHC MAX
VOHD AVG
VOHD MIN
VOHD MAX
60
40
20
0
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 6. ISL70444SEH output HIGH voltage as a function of neutron irradiation, each channel, no load, showing the mean, minimum and
maximum of the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and
1x1014n/cm2), with two control units. The post-total dose irradiation SMD limit is 160mV maximum.
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180
SPEC LIMIT
160
OUTPUT LOW VOLTAGE (mV)
140
120
100
80
60
VOLA AVG
VOLA MIN
VOLA MAX
VOLB AVG
VOLB MIN
VOLB MAX
VOLC AVG
VOLC MIN
VOLC MAX
VOLD AVG
VOLD MIN
VOLD MAX
40
20
0
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 7. ISL70444SEH output LOW voltage as a function of neutron irradiation, no load, showing the mean, minimum and maximum of the
populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and 1x1014n/cm2), with
two control units. The post-total dose irradiation SMD limit is 160mV maximum.
140
POSITIVE OPEN-LOOP GAIN (dB)
120
100
SPEC LIMIT
80
60
40
AVOLPA AVG
AVOLPA MIN
AVOLPA MAX
AVOLPB AVG
AVOLPB MIN
AVOLPB MAX
AVOLPC AVG
AVOLPC MIN
AVOLPC MAX
AVOLPD AVG
AVOLPD MIN
AVOLPD MAX
20
0
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 8. ISL70444SEH positive open-loop gain as a function of neutron irradiation, each channel, showing the mean, minimum and maximum
of the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and 1x1014n/cm2),
with two control units. The post-total dose irradiation SMD limit is 96dB minimum.
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140
NEGATIVE OPEN-LOOP GAIN (dB)
120
100
SPEC LIMIT
80
60
40
AVOLNA AVG
AVOLNA MIN
AVOLNA MAX
AVOLNB AVG
AVOLNB MIN
AVOLNB MAX
AVOLNC AVG
AVOLNC MIN
AVOLNC MAX
AVOLND AVG
AVOLNDMIN
AVOLND MAX
20
0
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 9. ISL70444SEH negative open-loop gain as a function of neutron irradiation, each channel, showing the mean, minimum and maximum
of the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and 1x1014n/cm2),
with two control units. The post-total dose irradiation SMD limit is 96dB minimum.
160
140
POSITIVE PSRR (dB)
120
100
SPEC LIMIT
80
60
40
20
0
PRE-RAD
1E+12
1E+13
PSRRPA AVG
PSRRPA MIN
PSRRPA MAX
PSRRPB AVG
PSRRPB MIN
PSRRPB MAX
PSRRPC AVG
PSRRPC MIN
PSRRPC MAX
PSRRPD AVG
PSRRDA MIN
PSRRPD MAX
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 10. ISL70444SEH positive power supply rejection ratio as a function of neutron irradiation, each channel, showing the mean, minimum
and maximum of the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and
1x1014n/cm2), with two control units. The post-total dose irradiation SMD limit is 88dB minimum.
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180
160
NEGATIVE PSRR (dB)
140
120
100
SPEC LIMIT
80
60
40
PSRRNA AVG
PSRRNA MIN
PSRRNA MAX
PSRRNB AVG
PSRRNB MIN
PSRRNB MAX
PSRRNC AVG
PSRRNC MIN
PSRRNC MAX
PSRRND AVG
PSRRND MIN
PSRRND MAX
20
0
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 11. ISL70444SEH negative power supply rejection ratio as a function of neutron irradiation, each channel, showing the mean, minimum
and maximum of the populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and
1x1014n/cm2), with two control units. The post-total dose irradiation SMD limit is 88dB minimum.
180
160
140
CMRR (dB)
120
100
80
SPEC LIMIT
60
CMRRA AVG
CMRRA MIN
CMRRA MAX
CMRRB AVG
CMRRB MIN
CMRRB MAX
CMRRC AVG
CMRRC MIN
CMRRC MAX
CMRRD AVG
CMRRD MIN
CMRRD MAX
40
20
0
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 12. ISL70444SEH common mode rejection ratio as a function of neutron irradiation, showing the mean, minimum and maximum of the
populations at each level. Sample size was 5 for each cell (5x1011n/cm2, 2x1012n/cm2, 1x1013n/cm2 and 1x1014n/cm2), with
two control units. The post-total dose irradiation SMD limit is 70dB minimum.
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Discussion and Conclusion
This document reports the results of neutron testing of the
ISL70444SEH quad operational amplifier. Samples were
irradiated to levels of 5x1011n/cm2, 2x1012n/cm2,
1x1013n/cm2 and 1x1014n/cm2 with a sample size of five parts
per cell. It should again be carefully realized when interpreting
the attributes and variables data that each neutron irradiation
was performed on a different 5-unit sample; this is not total dose
testing, where a single set of samples is used and the damage is
cumulative. ATE characterization testing was performed before
and after the irradiations, and two control units were used to
insure repeatable data. Variables data for monitored parameters
is presented in Figures 1 through 12. The 2 x 1012 n/cm2 level is
of some interest in the context of recent developments in the
JEDEC community, where the discrete component vendor
community have signed up for characterization testing (but not
for acceptance testing) at this level.
The ISL70444SEH is not formally designed for neutron hardness.
The part is built in a DI complementary bipolar process. These
bipolar transistors are minority carrier devices, obviously, and
may be expected to be sensitive to Displacement Damage (DD)
at the higher levels. This expectation turned out to be correct. We
will discuss the results on a parameter-by-parameter basis and
then draw some conclusions.
The positive power supply current (Figure 1) showed good
stability after 5x1011n/cm2 and 2x1012n/cm2, decreased
slightly after 1x1013 n/cm2 irradiation and was down to maybe
1mA per channel after 1x1014n/cm2 irradiation. This response
indicates a gradual reduction of the operating currents as the
transistor current gain degrades.
The input offset voltage (Figure 2) showed good stability at all
levels but was out of specification after 1x1014n/cm2 irradiation.
The range also increased greatly at this high level.
The positive and negative input bias current (Figures 3 and 4)
showed good stability at all levels and remained within the SMD
post total dose specification even after 1x1014n/cm2 irradiation.
The range also increased slightly at this highest level. These
results are consistent with gain degradation of the input
differential pair of the amplifier.
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The input offset current (Figure 5) is essentially the difference
between two large numbers (specifically, the positive and
negative input bias current values) and showed significant
variation. It was found to be outside of the SMD total dose
specification after both 1x1013n/cm2 and 1x1014n/cm2
irradiation. The range was also increased considerably at the
highest neutron level. These results are also consistent with gain
degradation of the input differential pair of the comparator, but
show good gain matching of both transistors over irradiation.
The output HIGH and LOW voltages (Figures 6 and 7) showed
good stability after 5x1011n/cm2, 2x1012n/cm2 and
1x1013n/cm2 irradiation but increased significantly after
1x1014n/cm2 irradiation. The range was also increased at this
highest level. This is a key parameter in a rail-to-rail op amp, as it
quantifies how close to the positive and negative rails the
amplifier can swing; it has little to do with the output HIGH and
LOW voltages found specified for digital parts.
The positive and negative open-loop gain (Figures 8 and 9)
showed good stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and
1 x 1013 n/cm2 irradiation but decreased significantly after 1 x
1014 n/cm2 irradiation.
The positive and negative power supply rejection ratio
(Figures 10 and 11) showed good stability after 5x1011n/cm2,
2x1012n/cm2 and 1x1013n/cm2 irradiation but decreased
significantly after 1x1014n/cm2 irradiation.
The common mode rejection ratio (Figure 12) showed good
stability at all levels.
We conclude that the ISL70444SEH is capable of post
1x1013n/cm2 operation (likely with some relaxation of
parametric specifications for some parameters) within the SMD
post-total dose parameters. The part is not capable of post
1x1014n/cm2 operation as parameters such as input offset
voltage, input offset current and open-loop gain were well
outside the SMD limits. The part did, however, remain functional.
Note that AC performance data was not taken, but the large
signal AC parameters such as slew rate and bandwidth were
found to be within specification to 1x1013n/cm2 in other parts
using the PR40 process.
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Test Report 008
Appendices
TABLE 1. REPORTED PARAMETERS
FIGURE
PARAMETER
LIMIT, LOW
LIMIT, HIGH
UNIT
NOTES
-
+9.6
mA
4 channels
1
Positive and negative power supply current
2
Input offset voltage
-400.0
400.0
µV
Each channel
3
Positive input bias current
+650.0
-650.0
nA
Each channel
4
Negative input bias current
+650.0
-650.0
nA
Each channel
5
Input offset current
-17.0
+17.0
nA
Each channel
6
Output HIGH voltage
-
+160.0
mV
Each channel
7
Output LOW voltage
-
+160.0
mV
Each channel
8
Positive open loop gain
+96.0
-
dB
Each channel
9
Negative open loop gain
+96.0
-
dB
Each channel
10
Positive power supply rejection ratio
-
88.0
dB
Each channel
11
Negative power supply rejection ratio
-
88.0
dB
Each channel
12
Common mode rejection ratio
-
80.0
dB
Each channel
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the document is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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