Application Note 1838 Authors: Kiran Bernard, Eric Thomson, Lawrence Pearce, Nick Vanvonno Single Event Effects Testing of the ISL70444SEH, Quad 40V Radiation Hard Precision Operational Amplifiers Introduction SEE Results Objective There are many phenomena that occur past Earth's atmosphere that commercial integrated circuits do not encounter. Among these, we have effects that can cause a variety of transient and destructive effects in analog circuits; these are termed Single Event Latch-up (SEL), Single Event Burnout (SEB), and Single Event Transients (SET). Collectively they are called Single Event Effects (SEE). SEE can lead to system level failures including the disruption in normal operation as well as permanent damage. For a device to be deemed reliable under heavy ion environments, it should be designed from the ground up with SEE Hardness in mind. It will then undergo extensive SEE testing which then validates the design. This report discusses the results of SEE testing for the ISL70444SEH. The objective of the SEE Testing was to evaluate the ISL70444SEH's Single Event Transient (SET) behavior and its susceptibility to destructive events induced by single event effects such as Single Event Burnout (SEB). Related Documents • See FN8411, “ISL70444SEH datasheet” • ISL70444SEH Radiation Report Product Description The ISL70444SEH features 4 low-power amplifiers optimized to provide maximum dynamic range. This op amp features a common mode input voltage range that goes all the way to the rails and a rail-to-rail output voltage swing. The ISL70444SEH also offers low power, low offset voltage, and low temperature drift, making it ideal for applications requiring both high DC accuracy and AC performance. This amplifier is designed to operate over a single supply range of 2.7V to 40V or a split supply voltage range of ±1.35V to ±20V. Applications for this amplifier include precision instrumentation, data acquisition, precision power supply controls, and process controls. The ISL70444SEH is available in a 14 Ld hermetic ceramic flatpack and operates over the extended temperature range of -55°C to +125°C. A summary of the op amp features is as follows: • Rail-to-Rail on Input/Output (RRIO) Operation • Wide Gain·Bandwidth Product . . . . . . . . . . . . . . . . . . . . 19MHz • Low Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . 300µV SEE Testing Facility Testing for the ISL70444SEH was conducted at Texas A&M University (TAMU) Cyclotron Institute, Heavy Ion Facility. This facility is coupled with a K500 super-conducting cyclotron which is capable of generating a wide range of test particles with various energy, flux and fluence levels needed for advanced radiation testing. SEE Testing Procedure The ISL70444SEH was tested for Single Event Burnout (SEB) using Au ions at normal incidence (LET = 86.4 MeVocm2/mg) with a case temperature of 125°C and Single Event Transient with a gain of 10 using Ne, Ar, Kr, Ag, Pr and Au, and gain of 1 with Kr and Pr which provided the range of LET values needed for the tests. In both cases the case temperature was 25°C. The Device Under Test (DUT) was mounted in 14 lead dual in-line packages with the lid removed. It was then placed in the beam line and irradiated with heavy ions of the appropriate species. The beam was directed onto the exposed die and the beam flux, beam fluence and error in device outputs were monitored. There were 8 parts in total, SN1 through SN4 were used for SEB testing and SN5-SN8 were used for SET testing. The testing of the ISL70444SEH was conducted remotely from the control room at TAMU. Power to the DUT was supplied via bench-top power supplies and connected via heavy gauge stranded wires to minimize loss. The supply currents were monitored along with device outputs. Supply currents were monitored via digital ammeters and device outputs were monitored via oscilloscope to help identify how the part reacted to various SEE. Events were captured by triggering on deviations in the output. SEE Test Setup Diagrams Figures 1 and 2 show the evaluation board setup that was used during testing. • Low Current Consumption (per amp) . . . . . . . . . . 1.1mA, Typ. • Enhanced Large Signal SR. . . . . . . . . . . . . . . . . . . . . . .60V/µs June 28, 2013 AN1838.0 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Copyright Intersil Americas LLC 2013. All Rights Reserved. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Application Note 1838 Where: VREF 100kΩ +V LET is the linear energy transfer in MeV•cm2/mg + 1kΩ ISL70444SEH 1V CS is the SET cross section in cm2, expressed as a function of the heavy ion LET. 100Ω N is the total number of SET events VOUT F is the fluence in particles/cm2 ‐ 1kΩ A value of 1/F is the assumed cross section when no event is observed. ‐V Single Event Burnout (SEB) Results 9kΩ The first test in the sequence was to look for destructive events due to SEB. A failure due to burnout was indicated by a permanent change in the part's supply current after the beam was turned off. If the supply current reverted back to its pre-radiation value after a power cycle, the event was then deemed as latch-up. The ISL70444SEH did not have any latch-up events; this can be attributed to the SOI construction of the process and therefore it is latch-up immune. FIGURE 1. ISL70444SEH CONFIGURATION (GAIN OF 10) VREF 100kΩ 1kΩ +V + ISL70444SEH 1V 100Ω VOUT No burnout was observed for the ISL70444SEH when using Au ions at normal incidence. Testing was performed on 4 parts at a TC of +125°C using the schematic shown in Figure 1. The common voltage at which each part passed to was ±21VSUPPLY. SN1 and SN4 both passed to ±23V, while SN3 passed to ±22V and SN2 passed to ±21V. Each part was started at ±18V and stepped up in incrementally until they failed. All test runs were run in a gain of 10 to a fluence of 2x106/cm2 with an input of 100mV applied to the non-inverting input of the amplifiers. After each run, the functionality of the op amp was verified by monitoring the outputs of all amplifiers with an oscilloscope. IDD and IEE were recorded pre and post exposure and then summed up, a ±5% delta (to allow for measurement repeatability) would indicate a failure. Table 1 shows the SEB results for the ISL70444SEH for a supply voltage of ±21V. ‐ ‐V 100Ω FIGURE 2. ISL70444SEH CONFIGURATION (GAIN OF 1) The ISL70444SEH was tested under 2 conditions, gain of 10 (Figure 1) and gain of 1 (Figure 2). Under each condition, each channel of the quad amplifier was configured identically and VREF was left to float. A 100Ω series resistor was used to shield the amplifier from cable capacitance. A more detailed board schematic and layout of the evaluation board can be referenced in Appendix A. Cross Section Calculations Cross sections (CS) are calculated as shown by Equation 1: N CS ( LET ) = --F (EQ. 1) TABLE 1. SEB RESULTS (FLUENCE = 2x106/cm2) WITH NO DESTRUCTIVE OR LATCH EVENTS; ALL PARTS PASSED TO VS = ±21V PRE-EXPOSURE POST EXPOSURE SN TEMP (°C) I- (mA) I+ (mA) I- (mA) I+ (mA) SEB/L 1 +125 8.92 8.56 8.94 8.57 PASS 2 +125 10.95 10.53 10.47 10.14 PASS 3 +125 7.41 7.04 7.39 7.02 PASS 4 +125 15.28 14.97 15.57 15.20 PASS 2 AN1838.0 June 28, 2013 Application Note 1838 Single Event Transient (SET) Results (±1% of VOUT) for VS = ±1.35V and ±200mV (±1% of VOUT) for VS = ±15V. The volts per division on each captured trace was 1V/div for VS = ±1.35V and 5V/div for VS = ±15V. During post-processing, transient durations are defined as any voltage transient in excess of ±10mV from VOUT. The time spent ±10mV away from VOUT is then summed up and presented in histograms in Figures 3 and 4. Positive and negative voltage deviations were recorded separately from each other. TEST SETUP (GAIN OF 1) Two devices were tested at two different supply voltages, VS = ±1.35V and VS = ±15V. The non-inverting inputs for all amplifiers were set to 1V for VS = ±1.35V and 2V for VS = ±15V. The outputs were monitored from the control room with four LeCroy Oscilloscopes. Summary of the scope settings is as follows: Cross Section Results Trigger Connections The results shown in Tables 2 and 3 are the cross sectional results for the 2 devices that were tested in unity gain at LET = 28 and 60MeV•cm2/mg. It appears that in this case the higher supply voltage of ±15V had a lower cross section. • Scope 1 triggered on Channel A • Scope 2 triggered on Channel B • Scope 3 triggered on Channel C • Scope 4 triggered on Channel D SET events were recorded whenever the output deviated from a trigger window during beam exposure. The window was ±100mV TABLE 2. SET CROSS SECTION RESULTS of ISL70444SEH IN UNITY GAIN (VS = ±1.5V); TRIGGER WINDOW = ±100mV SUPPLY (V) SPECIES LET (MeV•cm2/mg) ANGLE (°) CHANNEL DEVICE FLUENCE/RUN (P/cm2) TOTAL SET EVENT CS (cm2) ±1.5V Kr 28 0 A 6 1.00E+06 502 5.02E-04 ±1.5V Pr 28 0 A 7 1.00E+06 502 5.02E-04 ±1.5V Kr 60 0 A 6 1.00E+06 541 5.41E-04 ±1.5V Pr 60 0 A 7 1.00E+06 678 6.78E-04 ±1.5V Kr 28 0 B 6 1.00E+06 533 5.33E-04 ±1.5V Pr 28 0 B 7 1.00E+06 538 5.38E-04 ±1.5V Kr 60 0 B 6 1.00E+06 680 6.80E-04 ±1.5V Pr 60 0 B 7 1.00E+06 714 7.14E-04 ±1.5V Kr 28 0 C 6 1.00E+06 334 3.34E-04 ±1.5V Pr 28 0 C 7 1.00E+06 294 2.94E-04 ±1.5V Kr 60 0 C 6 1.00E+06 371 3.71E-04 ±1.5V Pr 60 0 C 7 1.00E+06 323 3.23E-04 ±1.5V Kr 28 0 D 6 1.00E+06 478 4.78E-04 ±1.5V Pr 28 0 D 7 1.00E+06 449 4.49E-04 ±1.5V Kr 60 0 D 6 1.00E+06 534 5.34E-04 ±1.5V Pr 60 0 D 7 1.00E+06 500 5.00E-04 3 AN1838.0 June 28, 2013 Application Note 1838 TABLE 3. SET CROSS SECTION RESULTS of ISL70444SEH IN UNITY GAIN (VS = ±15V); TRIGGER WINDOW = ±200mV SUPPLY (V) SPECIES LET (MeV•cm2/mg) ANGLE (°) CHANNEL DEVICE FLUENCE/RUN (P/cm2) TOTAL SET EVENT CS (cm2) ±15 Kr 28 0 A 6 1.00E+06 355 3.55E-04 ±15 Pr 28 0 A 7 1.00E+06 328 3.28E-04 ±15 Kr 60 0 A 6 2.00E+06 1027 5.14E-04 ±15 Pr 60 0 A 7 1.00E+06 629 6.29E-04 ±15 Kr 28 0 B 6 1.00E+06 362 3.62E-04 ±15 Pr 28 0 B 7 1.00E+06 316 3.16E-04 ±15 Kr 60 0 B 6 1.00E+06 673 6.73E-04 ±15 Pr 60 0 B 7 1.00E+06 620 6.20E-04 ±15 Kr 28 0 C 6 1.00E+06 248 2.48E-04 ±15 Pr 28 0 C 7 1.00E+06 254 2.54E-04 ±15 Kr 60 0 C 6 1.00E+06 392 3.92E-04 ±15 Pr 60 0 C 7 1.00E+06 340 3.40E-04 ±15 Kr 28 0 D 6 1.00E+06 330 3.30E-04 ±15 Pr 28 0 D 7 1.00E+06 309 3.09E-04 ±15 Kr 60 0 D 6 1.00E+06 531 5.31E-04 ±15 Pr 60 0 D 7 1.00E+06 464 4.64E-04 SET Characteristics Figures 3 through 8 are histograms that describe the characteristics of transients caused by SETs. Figures 3 and 4 describe the duration of the SETs at VS = ±1.35V and VS = ±15V respectively. Figures 5 and 6 describe the maximum positive voltage deviation from VOUT during an SET at VS = ±1.35V and VS = ±15V respectively. Figures 7 and 8 describe the maximum negative voltage deviation from VOUT during an SET at VS = ±1.35V and VS = ±15V respectively. For VS = ±1.35V, recovery time from SETs were always within 2µs. For VS = ±15V, recovery time was much faster (≤400ns). For the composite pictures in Figures 9 through 12 the first 200 captures at each LET and power supply setting were plotted on top of each other to show an envelope of how the ISL70444SEH reacts during SETs for LET = 28 and 60MeV•cm2/mg. Transient Duration Histograms 200 300 LET 28 180 LET 28 LET 60 250 160 140 200 Number of Events Number of Events LET 60 120 100 80 150 100 60 40 50 20 0 0 Transient Duration FIGURE 3. Transient Durations Caused By SETs (VS = ±1.35V) at LET = 28 and 60MeV•cm2/mg with fluence of 2x106/cm2; SETs are defined as a pulse in excess of ±10mV from VOUT during post-processing 4 Transient Duration FIGURE 4. Transient Durations Caused By SETs (VS = ±15V) at LET = 28 and 60 MeV•cm2/mg with fluence of 2x106/cm2; SETs are defined as a pulse in excess of ±10mV from VOUT during post-processing AN1838.0 June 28, 2013 Application Note 1838 Positive Voltage Deviation Histograms 100 400 LET 28 90 LET 28 LET 60 LET 60 350 80 300 60 Number of Events Number of Events 70 50 40 250 200 150 30 100 20 10 50 0 0 Max Positive Transient Levels (V) Max Positive Transient Levels (V) FIGURE 6. Max Positive Transient Voltage from VOUT = +2V caused by SETs (VS = ±15V); LET = 28 and 60MeV•cm2/mg with fluence of 2x106/cm2 FIGURE 5. Max Positive Transient Voltage from VOUT = +1V caused by SETs (VS = ±1.35V); LET = 28 and 60MeV•cm2/mg with fluence of 2x106/cm2 Negative Voltage Deviation Histograms 200 400 LET 28 180 LET 60 LET 28 LET 60 350 160 300 Number of Events Number of Events 140 120 100 80 250 200 150 60 100 40 50 20 0 0 Max Negative Transient Levels (V) Max Negative Transient Levels (V) FIGURE 7. Max Negative Transient Voltage from VOUT = +1V caused by SETs (VS = ±1.35V); LET = 28 and 60MeV•cm2/mg with fluence of 2x106/cm2 FIGURE 8. Max Negative Transient Voltage from VOUT = +2V caused by SETs (VS = ±15V); LET = 28 and 60MeV•cm2/mg with fluence of 2x106/cm2 SET Composite Plots (Unity Gain) FIGURE 9. LET = 28 MeV •cm2/mg (V S = ±1.35V) 5 FIGURE 10. LET = 28 MeV •cm 2/mg (V S = ±15V) AN1838.0 June 28, 2013 Application Note 1838 SET Composite Plots (Unity Gain) (Continued) FIGURE 11. LET = 60 MeV •cm 2/mg (V S = ±1.35V) FIGURE 12. LET = 60 MeV •cm 2/mg (V S = ±15V) TEST SETUP (GAIN OF 10) CHANNEL CONNECTION ON ALL SCOPES (VS = ±15V) There is a definite advantage for high speed op amps in applications that use gains greater than 1 as they still provide ample bandwidth comparatively while in a gained configuration. As most applications tend to use high speed op amps with gains higher than 1, a worst case analysis was studied at several more SETs with ACL = 10. For this worst case analysis, SETs were defined as a ±1V deviation at VS = ±15V and ±200mV for VS = ±1.35V to showcase the ultra fast recovery time of the ISL70444SEH under drastic changes (≤5µs in all cases). During post-processing, transient durations are defined as any voltage transient that crosses ±10mV from VOUT. The time spent ±10mV away from VOUT is then summed up and presented in histograms in Figures 24 and 27 for their respective test conditions. Positive and negative voltage deviations were recorded separately from each other illustrated in Figures 22, 23, 25 and 26. • CH1 through CH4 = 5V/div (OUTA through OUTD) TRIGGER CONNECTIONS • Scope 1 triggered on Channel A • Scope 2 triggered on Channel B • Scope 3 triggered on Channel C • Scope 4 triggered on Channel D Unlike other Intersil radiation tolerant circuits, the ISL70444SEH was not designed with Single Event Transient mitigation. The best approach to characterize the SET response is to represent the data on a LET threshold plot (shown in Figure 13). As it can be seen, VS = ±15V has a lower SET cross section across all tested LET levels compared to VS = ±1.35V. The data represented in Figure 13 is shown in tabular form in Table 4. 0.0020 0.0018 CROSS SECTION (cm2) The non-inverting inputs for all amplifiers were set to 1V. The outputs were monitored from the control room with four LeCroy Oscilloscopes. Summary of the scope settings is as follows: Cross Section Results 0.0016 0.0014 0.0012 0.0010 0.0008 0.0006 0.0004 Vs = ±15V 0.0002 Vs = ±15V 0 0 20 40 60 80 LET (MeV•mg/cm2) FIGURE 13. SET CROSS SECTION vs LET vs SUPPLY VOLTAGE CHANNEL CONNECTION ON ALL SCOPES (VS = ±1.35V) • CH1 through CH4 = 1V/div (OUTA through OUTD) 6 AN1838.0 June 28, 2013 Application Note 1838 TABLE 4. DETAILS OF LET THRESHOLD PLOT; TRIGGER WINDOWS DEFINED IN TEST SETUP (GAIN OF 10) SUPPLY (V) SPECIES LET (MeV•cm2/mg) ANGLE (°) RUNS FLUENCE/RUN (P/cm2) TOTAL SET EVENT CS (cm2) ±1.35V Ne 2.7 0 4 2.00E+06 126 1.58E-05 ±1.35V Ar 8.5 0 4 2.00E+06 2789 3.49E-04 ±1.35V Kr 28 0 4 2.00E+06 9385 1.17E-03 ±1.35V Ag 43 0 4 2.00E+06 11121 1.39E-03 ±1.35V Pr 60 0 4 2.00E+06 12015 1.50E-03 ±1.35V Au 86 0 4 2.00E+06 14257 1.78E-03 ±15.0V Ne 2.7 0 4 2.00E+06 19 2.38E-06 ±15.0V Ar 8.5 0 4 2.00E+06 693 8.66E-05 ±15.0V Kr 28 0 4 2.00E+06 4501 5.63E-04 ±15.0V Ag 43 0 4 2.00E+06 6981 8.73E-04 ±15.0V Pr 60 0 4 2.00E+06 9119 1.14E-03 ±15.0V Au 86 0 4 2.00E+06 10974 1.37E-03 Figures 14 through 17 provide the cross section vs LET on a channel-by-channel basis for VS = ±1.35V, while Figures 18 through 21 provide the cross section vs LET channel-by-channel for VS = ±15V. At each given LET, the cross section for each of the 4 devices tested are provided along with the summed average cross section of all devices shown in red for VS = ±1.35V and blue for VS = ±15V. The tabular data for Figures 14 through 21 is provided for convenience in Tables 5 through 12. respectively caused by SETs vs LET at VS = ±15V. Figures 25, 26, and 27 are identical except with supplies at VS = ±1.35V. For the composite pictures in Figures 28 through 39 the first 200 captures at each LET and power supply setting were plotted on top of each other to show an envelope of how the ISL70444SEH reacts during SETs for LET = 2.7, 8.5, 28, 43, 60 and 86 MeV•cm2/mg. SET Characteristics Figures 22, 23 and 24 describe the positive transient voltage spikes, negative transient voltage spikes and transient durations 7.0E-04 7.0E-04 6.0E-04 6.0E-04 CROSS SECTION (cm2) CROSS SECTION (cm2) Cross Section Results: ±1.35V (Channel-by-Channel) 5.0E-04 4.0E-04 3.0E-04 Mean Dev5 Dev6 Dev7 Dev8 2.0E-04 1.0E-04 0.0E+00 0 10 20 30 40 50 60 70 80 90 LET (MeV•mg/cm2) FIGURE 14. Channel A SET Cross Section vs LET (VS = ±1.35V) ACL = 10 7 5.0E-04 4.0E-04 3.0E-04 1.0E-04 0.0E+00 100 Mean Dev5 Dev6 Dev7 Dev8 2.0E-04 0 10 20 30 40 50 60 70 80 90 100 LET (MeV•mg/cm2) FIGURE 15. Channel A SET Cross Section vs LET (VS = ±1.35V) ACL = 10 AN1838.0 June 28, 2013 Application Note 1838 7.0E-04 7.0E-04 6.0E-04 6.0E-04 CROSS SECTION (cm2) CROSS SECTION (cm2) Cross Section Results: ±1.35V (Channel-by-Channel) 5.0E-04 4.0E-04 3.0E-04 Mean Dev5 Dev6 Dev7 Dev8 2.0E-04 1.0E-04 0.0E+00 0 10 20 30 40 50 60 70 80 90 5.0E-04 4.0E-04 3.0E-04 1.0E-04 0.0E+00 0 100 Mean Dev5 Dev6 Dev7 Dev8 2.0E-04 10 20 LET (MeV•mg/cm2) FIGURE 16. Channel C SET Cross Section vs LET (VS = ±1.35V) ACL = 10 30 40 50 60 70 LET (MeV•mg/cm2) 80 90 100 FIGURE 17. Channel D SET Cross Section vs LET (VS = ±1.35V) ACL = 10 5.0E-04 5.0E-04 4.0E-04 4.0E-04 3.0E-04 Mean Dev5 Dev6 Dev7 Dev8 90 100 2.0E-04 1.0E-04 0.0E+00 0 10 20 30 40 50 60 70 80 CROSS SECTION (cm2) CROSS SECTION (cm2) Cross Section Results: ±15V (Channel-by-Channel) 3.0E-04 2.0E-04 Mean Dev5 Dev6 Dev7 Dev8 1.0E-04 0.0E+00 0 10 20 30 LET (MeV•mg/cm2) 5.0E-04 5.0E-04 4.0E-04 4.0E-04 3.0E-04 2.0E-04 Mean Dev5 Dev6 Dev7 Dev8 1.0E-04 0 10 20 30 40 50 60 70 80 90 LET (MeV•mg/cm2) FIGURE 20. Channel C SET Cross Section vs LET (VS = ±15V) ACL = 10 8 50 60 70 80 90 100 FIGURE 19. Channel B SET Cross Section vs LET (VS = ±15V) ACL = 10 CROSS SECTION (cm2) CROSS SECTION (cm2) FIGURE 18. Channel A SET Cross Section vs LET (VS = ±15V) ACL = 10 0.0E+00 40 LET (MeV•mg/cm2) 100 3.0E-04 2.0E-04 Mean Dev5 Dev6 Dev7 Dev8 1.0E-04 0.0E+00 0 10 20 30 40 50 60 70 80 90 100 LET (MeV•mg/cm2) FIGURE 21. Channel D SET Cross Section vs LET (VS = ±15V) ACL = 10 AN1838.0 June 28, 2013 Application Note 1838 Tabular Cross Section Results: ±1.35V, ACL = 10 (Channel-by-Channel) TABLE 5. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±1.35V (DEVICE 5) SUPPLY (V) SPECIES LET (MeV•cm2/mg) CH DEVICE FLUENCE/RUN (P/cm2) EVENTS EVENT CS (cm2) ±1.35 Ne 2.7 A 5 2.00E+06 3 1.50E-06 ±1.35 Ar 8.5 A 5 2.00E+06 141 7.05E-05 ±1.35 Kr 28 A 5 2.00E+06 531 2.66E-04 ±1.35 Ag 43 A 5 2.00E+06 639 3.20E-04 ±1.35 Pr 60 A 5 2.00E+06 759 3.80E-04 ±1.35 Au 86 A 5 2.00E+06 839 4.20E-04 ±1.35 Ne 2.7 B 5 2.00E+06 8 4.00E-06 ±1.35 Ar 8.5 B 5 2.00E+06 202 1.01E-04 ±1.35 Kr 28 B 5 2.00E+06 650 3.25E-04 ±1.35 Ag 43 B 5 2.00E+06 744 3.72E-04 ±1.35 Pr 60 B 5 2.00E+06 768 3.84E-04 ±1.35 Au 86 B 5 2.00E+06 963 4.82E-04 ±1.35 Ne 2.7 C 5 2.00E+06 12 6.00E-06 ±1.35 Ar 8.5 C 5 2.00E+06 238 1.19E-04 ±1.35 Kr 28 C 5 2.00E+06 477 2.39E-04 ±1.35 Ag 43 C 5 2.00E+06 632 3.16E-04 ±1.35 Pr 60 C 5 2.00E+06 599 3.00E-04 ±1.35 Au 86 C 5 2.00E+06 570 2.85E-04 ±1.35 Ne 2.7 D 5 2.00E+06 9 4.50E-06 ±1.35 Ar 8.5 D 5 2.00E+06 128 6.40E-05 ±1.35 Kr 28 D 5 2.00E+06 764 3.82E-04 ±1.35 Ag 43 D 5 2.00E+06 659 3.30E-04 ±1.35 Pr 60 D 5 2.00E+06 770 3.85E-04 ±1.35 Au 86 D 5 2.00E+06 1062 5.31E-04 9 AN1838.0 June 28, 2013 Application Note 1838 TABLE 6. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±1.35V (DEVICE 6) SUPPLY (V) SPECIES LET (MeV•cm2/mg) CH DEVICE FLUENCE/RUN (P/cm2) EVENTS EVENT CS (cm2) ±1.35 Ne 2.7 A 6 2.00E+06 1 5.00E-07 ±1.35 Ar 8.5 A 6 2.00E+06 151 7.55E-05 ±1.35 Kr 28 A 6 2.00E+06 538 2.69E-04 ±1.35 Ag 43 A 6 2.00E+06 637 3.19E-04 ±1.35 Pr 60 A 6 2.00E+06 761 3.81E-04 ±1.35 Au 86 A 6 2.00E+06 855 4.28E-04 ±1.35 Ne 2.7 B 6 2.00E+06 3 1.50E-06 ±1.35 Ar 8.5 B 6 2.00E+06 163 8.15E-05 ±1.35 Kr 28 B 6 2.00E+06 588 2.94E-04 ±1.35 Ag 43 B 6 2.00E+06 712 3.56E-04 ±1.35 Pr 60 B 6 2.00E+06 870 4.35E-04 ±1.35 Au 86 B 6 2.00E+06 1184 5.92E-04 ±1.35 Ne 2.7 C 6 2.00E+06 17 8.50E-06 ±1.35 Ar 8.5 C 6 2.00E+06 241 1.21E-04 ±1.35 Kr 28 C 6 2.00E+06 496 2.48E-04 ±1.35 Ag 43 C 6 2.00E+06 587 2.94E-04 ±1.35 Pr 60 C 6 2.00E+06 594 2.97E-04 ±1.35 Au 86 C 6 2.00E+06 653 3.27E-04 ±1.35 Ne 2.7 D 6 2.00E+06 1 5.00E-07 ±1.35 Ar 8.5 D 6 2.00E+06 126 6.30E-05 ±1.35 Kr 28 D 6 2.00E+06 533 2.67E-04 ±1.35 Ag 43 D 6 2.00E+06 692 3.46E-04 ±1.35 Pr 60 D 6 2.00E+06 783 3.92E-04 ±1.35 Au 86 D 6 2.00E+06 1276 6.38E-04 10 AN1838.0 June 28, 2013 Application Note 1838 TABLE 7. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±1.35V (DEVICE 7) SUPPLY (V) SPECIES LET (MeV•cm2/mg) CH DEVICE FLUENCE/RUN (P/cm2) EVENTS EVENT CS (cm2) ±1.35 Ne 2.7 A 7 2.00E+06 6 3.00E-06 ±1.35 Ar 8.5 A 7 2.00E+06 153 7.65E-05 ±1.35 Kr 28 A 7 2.00E+06 510 2.55E-04 ±1.35 Ag 43 A 7 2.00E+06 645 3.23E-04 ±1.35 Pr 60 A 7 2.00E+06 773 3.87E-04 ±1.35 Au 86 A 7 2.00E+06 796 3.98E-04 ±1.35 Ne 2.7 B 7 2.00E+06 5 2.50E-06 ±1.35 Ar 8.5 B 7 2.00E+06 175 8.75E-05 ±1.35 Kr 28 B 7 2.00E+06 658 3.29E-04 ±1.35 Ag 43 B 7 2.00E+06 879 4.40E-04 ±1.35 Pr 60 B 7 2.00E+06 808 4.04E-04 ±1.35 Au 86 B 7 2.00E+06 1022 5.11E-04 ±1.35 Ne 2.7 C 7 2.00E+06 18 9.00E-06 ±1.35 Ar 8.5 C 7 2.00E+06 229 1.15E-04 ±1.35 Kr 28 C 7 2.00E+06 495 2.48E-04 ±1.35 Ag 43 C 7 2.00E+06 603 3.02E-04 ±1.35 Pr 60 C 7 2.00E+06 575 2.88E-04 ±1.35 Au 86 C 7 2.00E+06 559 2.80E-04 ±1.35 Ne 2.7 D 7 2.00E+06 5 2.50E-06 ±1.35 Ar 8.5 D 7 2.00E+06 113 5.65E-05 ±1.35 Kr 28 D 7 2.00E+06 703 3.52E-04 ±1.35 Ag 43 D 7 2.00E+06 973 4.87E-04 ±1.35 Pr 60 D 7 2.00E+06 820 4.10E-04 ±1.35 Au 86 D 7 2.00E+06 1122 5.61E-04 11 AN1838.0 June 28, 2013 Application Note 1838 TABLE 8. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±1.35V (DEVICE 8) SUPPLY (V) SPECIES LET (MeV•cm2/mg) CH DEVICE FLUENCE/RUN (P/cm2) EVENTS EVENT CS (cm2) ±1.35 Ne 2.7 A 8 2.00E+06 4 2.00E-06 ±1.35 Ar 8.5 A 8 2.00E+06 164 8.20E-05 ±1.35 Kr 28 A 8 2.00E+06 578 2.89E-04 ±1.35 Ag 43 A 8 2.00E+06 644 3.22E-04 ±1.35 Pr 60 A 8 2.00E+06 743 3.72E-04 ±1.35 Au 86 A 8 2.00E+06 873 4.37E-04 ±1.35 Ne 2.7 B 8 2.00E+06 15 7.50E-06 ±1.35 Ar 8.5 B 8 2.00E+06 191 9.55E-05 ±1.35 Kr 28 B 8 2.00E+06 535 2.68E-04 ±1.35 Ag 43 B 8 2.00E+06 720 3.60E-04 ±1.35 Pr 60 B 8 2.00E+06 854 4.27E-04 ±1.35 Au 86 B 8 2.00E+06 1121 5.61E-04 ±1.35 Ne 2.7 C 8 2.00E+06 15 7.50E-06 ±1.35 Ar 8.5 C 8 2.00E+06 237 1.19E-04 ±1.35 Kr 28 C 8 2.00E+06 537 2.69E-04 ±1.35 Ag 43 C 8 2.00E+06 610 3.05E-04 ±1.35 Pr 60 C 8 2.00E+06 643 3.22E-04 ±1.35 Au 86 C 8 2.00E+06 615 3.08E-04 ±1.35 Ne 2.7 D 8 2.00E+06 4 2.00E-06 ±1.35 Ar 8.5 D 8 2.00E+06 137 6.85E-05 ±1.35 Kr 28 D 8 2.00E+06 792 3.96E-04 ±1.35 Ag 43 D 8 2.00E+06 745 3.73E-04 ±1.35 Pr 60 D 8 2.00E+06 895 4.48E-04 ±1.35 Au 86 D 8 2.00E+06 1180 5.90E-04 12 AN1838.0 June 28, 2013 Application Note 1838 Tabular Cross Section Results: ±15V, ACL = 10 (Channel-by-Channel) TABLE 9. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±15V (DEVICE 5) SUPPLY (V) SPECIES LET (MeV•cm2/mg) CH DEVICE FLUENCE/RUN (P/cm2) EVENTS EVENT CS (cm2) ±15 Ne 2.7 A 5 2.00E+06 4 2.00E-06 ±15 Ar 8.5 A 5 2.00E+06 36 1.80E-05 ±15 Kr 28 A 5 2.00E+06 270 1.35E-04 ±15 Ag 43 A 5 2.00E+06 359 1.80E-04 ±15 Pr 60 A 5 2.00E+06 574 2.87E-04 ±15 Au 86 A 5 2.00E+06 685 3.43E-04 ±15 Ne 2.7 B 5 2.00E+06 4 2.00E-06 ±15 Ar 8.5 B 5 2.00E+06 40 2.00E-05 ±15 Kr 28 B 5 2.00E+06 300 1.50E-04 ±15 Ag 43 B 5 2.00E+06 376 1.88E-04 ±15 Pr 60 B 5 2.00E+06 621 3.11E-04 ±15 Au 86 B 5 2.00E+06 769 3.85E-04 ±15 Ne 2.7 C 5 2.00E+06 0 0.00E+00 ±15 Ar 8.5 C 5 2.00E+06 44 2.20E-05 ±15 Kr 28 C 5 2.00E+06 229 1.15E-04 ±15 Ag 43 C 5 2.00E+06 348 1.74E-04 ±15 Pr 60 C 5 2.00E+06 416 2.08E-04 ±15 Au 86 C 5 2.00E+06 424 2.12E-04 ±15 Ne 2.7 D 5 2.00E+06 0 0.00E+00 ±15 Ar 8.5 D 5 2.00E+06 41 2.05E-05 ±15 Kr 28 D 5 2.00E+06 297 1.49E-04 ±15 Ag 43 D 5 2.00E+06 410 2.05E-04 ±15 Pr 60 D 5 2.00E+06 572 2.86E-04 ±15 Au 86 D 5 2.00E+06 725 3.63E-04 13 AN1838.0 June 28, 2013 Application Note 1838 TABLE 10. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH FOR VS = ±15V (DEVICE 6) SUPPLY (V) SPECIES LET (MeV•cm2/mg) CH DEVICE FLUENCE/RUN (P/cm2) EVENTS EVENT CS (cm2) ±15 Ne 2.7 A 6 2.00E+06 0 0.00E+00 ±15 Ar 8.5 A 6 2.00E+06 43 2.15E-05 ±15 Kr 28 A 6 2.00E+06 287 1.44E-04 ±15 Ag 43 A 6 2.00E+06 437 2.19E-04 ±15 Pr 60 A 6 2.00E+06 575 2.88E-04 ±15 Au 86 A 6 2.00E+06 693 3.47E-04 ±15 Ne 2.7 B 6 2.00E+06 0 0.00E+00 ±15 Ar 8.5 B 6 2.00E+06 46 2.30E-05 ±15 Kr 28 B 6 2.00E+06 300 1.50E-04 ±15 Ag 43 B 6 2.00E+06 478 2.39E-04 ±15 Pr 60 B 6 2.00E+06 676 3.38E-04 ±15 Au 86 B 6 2.00E+06 765 3.83E-04 ±15 Ne 2.7 C 6 2.00E+06 3 1.50E-06 ±15 Ar 8.5 C 6 2.00E+06 60 3.00E-05 ±15 Kr 28 C 6 2.00E+06 232 1.16E-04 ±15 Ag 43 C 6 2.00E+06 357 1.79E-04 ±15 Pr 60 C 6 2.00E+06 448 2.24E-04 ±15 Au 86 C 6 2.00E+06 442 2.21E-04 ±15 Ne 2.7 D 6 2.00E+06 3 1.50E-06 ±15 Ar 8.5 D 6 2.00E+06 42 2.10E-05 ±15 Kr 28 D 6 2.00E+06 304 1.52E-04 ±15 Ag 43 D 6 2.00E+06 459 2.30E-04 ±15 Pr 60 D 6 2.00E+06 620 3.10E-04 ±15 Au 86 D 6 2.00E+06 792 3.96E-04 14 AN1838.0 June 28, 2013 Application Note 1838 TABLE 11. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH for VS = ±15V (DEVICE 7) SUPPLY (V) SPECIES LET (MeV•cm2/mg) CH DEVICE FLUENCE/RUN (P/cm2) EVENTS EVENT CS (cm2) ±15 Ne 2.7 A 7 2.00E+06 0 0.00E+00 ±15 Ar 8.5 A 7 2.00E+06 48 2.40E-05 ±15 Kr 28 A 7 2.00E+06 313 1.57E-04 ±15 Ag 43 A 7 2.00E+06 420 2.10E-04 ±15 Pr 60 A 7 2.00E+06 588 2.94E-04 ±15 Au 86 A 7 2.00E+06 701 3.51E-04 ±15 Ne 2.7 B 7 2.00E+06 2 1.00E-06 ±15 Ar 8.5 B 7 2.00E+06 40 2.00E-05 ±15 Kr 28 B 7 2.00E+06 299 1.50E-04 ±15 Ag 43 B 7 2.00E+06 452 2.26E-04 ±15 Pr 60 B 7 2.00E+06 632 3.16E-04 ±15 Au 86 B 7 2.00E+06 721 3.61E-04 ±15 Ne 2.7 C 7 2.00E+06 0 0.00E+00 ±15 Ar 8.5 C 7 2.00E+06 45 2.25E-05 ±15 Kr 28 C 7 2.00E+06 249 1.25E-04 ±15 Ag 43 C 7 2.00E+06 388 1.94E-04 ±15 Pr 60 C 7 2.00E+06 455 2.28E-04 ±15 Au 86 C 7 2.00E+06 442 2.21E-04 ±15 Ne 2.7 D 7 2.00E+06 0 0.00E+00 ±15 Ar 8.5 D 7 2.00E+06 40 2.00E-05 ±15 Kr 28 D 7 2.00E+06 304 1.52E-04 ±15 Ag 43 D 7 2.00E+06 453 2.27E-04 ±15 Pr 60 D 7 2.00E+06 595 2.98E-04 ±15 Au 86 D 7 2.00E+06 814 4.07E-04 15 AN1838.0 June 28, 2013 Application Note 1838 TABLE 12. DATA OF CHANNEL CROSS SECTION OF ISL70444SEH for VS = ±15V (DEVICE 8) SUPPLY (V) SPECIES LET (MeV•cm2/mg) CH DEVICE FLUENCE/RUN (P/cm2) EVENTS EVENT CS (cm2) ±15 Ne 2.7 A 8 2.00E+06 1 5.00E-07 ±15 Ar 8.5 A 8 2.00E+06 37 1.85E-05 ±15 Kr 28 A 8 2.00E+06 266 1.33E-04 ±15 Ag 43 A 8 2.00E+06 510 2.55E-04 ±15 Pr 60 A 8 2.00E+06 682 3.41E-04 ±15 Au 86 A 8 2.00E+06 785 3.93E-04 ±15 Ne 2.7 B 8 2.00E+06 1 5.00E-07 ±15 Ar 8.5 B 8 2.00E+06 50 2.50E-05 ±15 Kr 28 B 8 2.00E+06 315 1.58E-04 ±15 Ag 43 B 8 2.00E+06 577 2.89E-04 ±15 Pr 60 B 8 2.00E+06 788 3.94E-04 ±15 Au 86 B 8 2.00E+06 866 4.33E-04 ±15 Ne 2.7 C 8 2.00E+06 0 0.00E+00 ±15 Ar 8.5 C 8 2.00E+06 52 2.60E-05 ±15 Kr 28 C 8 2.00E+06 238 1.19E-04 ±15 Ag 43 C 8 2.00E+06 428 2.14E-04 ±15 Pr 60 C 8 2.00E+06 477 2.39E-04 ±15 Au 86 C 8 2.00E+06 481 2.41E-04 ±15 Ne 2.7 D 8 2.00E+06 1 5.00E-07 ±15 Ar 8.5 D 8 2.00E+06 29 1.45E-05 ±15 Kr 28 D 8 2.00E+06 298 1.49E-04 ±15 Ag 43 D 8 2.00E+06 529 2.65E-04 ±15 Pr 60 D 8 2.00E+06 700 3.50E-04 ±15 Au 86 D 8 2.00E+06 869 4.35E-04 16 AN1838.0 June 28, 2013 Application Note 1838 Voltage Deviation Histograms: ±15V 300 250 LET 2.7 LET 8.4 LET 28.3 LET 43 LET 60 LET 86 250 200 LET 2.7 LET 8.4 LET 28.3 LET 43 LET 60 LET 86 Number of Events Number of Events 200 150 150 100 100 50 50 0 0 Max Negative Transient Levels (V) Max Positive Transient Levels (V) FIGURE 23. Max Negative Voltage Transients from VOUT = +1V caused by SETs (VS = ±15V, ACL = 10), Fluence was run at 2x106/cm2 FIGURE 22. Max Positive Voltage Transients from VOUT = +1V caused by SETs (VS = ±15V, ACL = 10), Fluence was run at 2x106/cm2 Transient Deviation Histogram: ±15V 160 140 LET 2.7 LET 8.4 LET 28.3 LET 43 LET 60 LET 86 Numer of Events 120 100 80 60 40 20 0 100ns 200ns 300ns 400ns 500ns 600ns 700ns 800ns 900ns 1μs 2μs 3μs 4μs 5μs 6μs 7μs 8μs 9μs Transient Duration FIGURE 24. Max Transient Duration caused by SETs (V S = ±15V, ACL = 10), Fluence was run at 2x10 6/cm 2 Voltage Deviation Histograms: ±1.35V 70 60 LET 2.7 LET 8.4 LET 28.3 LET 43 LET 60 LET 86 100 90 80 LET 8.4 LET 28.3 LET 43 LET 60 LET 86 70 Number of Events Number of Events 50 LET 2.7 40 30 60 50 40 30 20 20 10 10 0 0 Max Positive Transient Levels (V) FIGURE 25. Max Positive Voltage Transients from VOUT = +1V caused by SETs (VS = ±1.35V, ACL = 10), Fluence was run at 2x106/cm2 17 Max Negative Transient Levels (V) FIGURE 26. Max Negative Voltage Transients from VOUT = +1V caused by SETs (VS = ±15V, ACL = 10), Fluence was run at 2x106/cm2 AN1838.0 June 28, 2013 Application Note 1838 Transient Deviation Histogram: ±1.35V 180 160 140 LET 2.7 LET 8.4 LET 28.3 LET 43 LET 60 LET 86 Numer of Events 120 100 80 60 40 20 0 Transient Duration FIGURE 27. Max Transient Duration caused by SETs (VS = ±1.35V, ACL = 10), Fluence was run at 2x10 6/cm 2 SET Composite Plots (Gain = 10) FIGURE 28. LET = 2.7 MeV•cm2/mg (VS = ±1.35V); Fluence was run at 2x106 /cm2 FIGURE 30. LET = 8.4 MeV•cm2/mg (VS = ±1.35V); Fluence was run at 2x106 /cm2 18 FIGURE 29. LET = 2.7 MeV•cm2/mg (VS = ±15V); Fluence was run at 2x106 /cm2 FIGURE 31. LET = 8.4 MeV•cm2/mg (VS = ±15V); Fluence was run at 2x106 /cm2 AN1838.0 June 28, 2013 Application Note 1838 SET Composite Plots (Gain = 10) (Continued) FIGURE 32. LET = 28.3 MeV•cm2/mg (VS = ±1.35V); Fluence was run at 2x106 /cm2 FIGURE 33. LET = 28.3 MeV•cm2/mg (VS = ±15V); Fluence was run at 2x106 /cm2 FIGURE 34. LET = 43 MeV•cm2/mg (VS = ±1.35V); Fluence was run at 2x106 /cm2 FIGURE 35. LET = 43 MeV•cm2/mg (VS = ±15V); Fluence was run at 2x106 /cm2 FIGURE 36. LET = 60 MeV•cm2/mg (VS = ±1.35V); Fluence was run at 2x106 /cm2 FIGURE 37. LET = 60 MeV•cm2/mg (VS = ±15V); Fluence was run at 2x106 /cm2 19 AN1838.0 June 28, 2013 Application Note 1838 SET Composite Plots (Gain = 10) (Continued) FIGURE 38. LET = 86 MeV•cm2/mg (VS = ±1.35V); Fluence was run at 2x106 /cm2 20 FIGURE 39. LET = 86 MeV•cm2/mg (VS = ±15V); Fluence was run at 2x106 /cm2 AN1838.0 June 28, 2013 0 C12 R46 0 OPEN DNP 0 OPEN R19 IN+C 0 DNP C11 RINA+ R35 J12 IN1+ 10K 1 C13 OPEN RGA+ R45 RINA+ 2 0 R41 IN+D 0 R43 R29 DNP R9 10K RREFA+ RINA1+ RREFA+ R26 J10 RGA+ DNP DNP R68 DNP OUT DNP J15 R69 DNP IN+C IN-C OUTC DNP 0 R57 R65 0 C19 OPEN R66 0 0 J16 DNP R54 R70 R50 100K DNP 8 R53 C20 R36 R38 J11 IN- IN-D RREFA- 10K D RINA1+ 9 VM R49 100K OPEN OUT 3 IN DNP OUT 2 R40 RINA2- R31 DNP C IN1+ 7 RINAIN-C DNP OPEN RINA2- -IN2 ISL70444SEH RREFAR25 C10 0 DNP DNP R4 R10 R13 J9 +IN2 6 RGA+ RINA- 10K IN- DNP R23 R18 +IN3 -IN3 10 5 IN+B 0 11 C25 R17 OPEN 12 V- V+ 0 RINA+ C9 R34 10K DNP IN1+ +IN4 OUT OPEN R58 RREFA+ R27 R7 +IN1 OUTD IN-D IN+D C21 RINA1+ -IN1 13 OPEN IN+B IN-B OUTB B J8 4 IN 14 C18 VP 3 OUT 4 -IN4 OUT 1 OPEN DNP R22 R12 DNP R3 DNP 2 OPEN OPEN R30 DNP 0 IN- C24 RREFA- R42 C8 DNP R8 DNP J7 U1 1 R60 OPEN IN-B OUTA IN-A IN+A J14 OUT Application Note 1838 RINA- R67 R64 0 R61 100K R47 R16 DNP DNP R52 C22 R39 100K 10K R59 R55 C15 OPEN C14 OPEN VP R62 R21 J1 J2 OPEN RGA+ OUT 0.01UF R56 0 OPEN 0.1UF C5 C23 IN+A J13 OUT VM 0.01UF R15 2 C3 OUT 0.1UF C1 DNP RINA+ C7 CLOSE TO PART CLOSE TO PART 0 C17 0 1UF D1 R63 0 OPEN 10K 0 R51 0 R37 R24 0 C16 1 RREFA+ R5 DNP 21 IN1+ V+ C26 OPEN RINA1+ C4 R1 D2 RREF DNP A J6 1UF R44 0 R32 DNP 100K 2 OPEN R33 RINA2- R28 DNP DNP R11 R2 DNP C6 1 0 C2 RREFAR20 J5 IN- V- IN-A R48 10K R6 REF1 RINA- R14 J3 J4 Appendix A AN1838.0 June 28, 2013 Application Note 1838 ISL70444SEHEVAL1Z LAYOUT FIGURE 40. TOP VIEW 22 AN1838.0 June 28, 2013 Application Note 1838 ISL70444SEHEVAL1Z LAYOUT (Continued) FIGURE 41. TOP LAYER 23 AN1838.0 June 28, 2013 Application Note 1838 ISL70444SEHEVAL1Z LAYOUT (Continued) FIGURE 42. BOTTOM LAYER Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the Application Note or Technical Brief is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com 24 AN1838.0 June 28, 2013