Schottky Barrier Diodes (SBD) MA3X701 Silicon epitaxial planar type Unit : mm For high-frequency rectification + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.45 1.5 − 0.05 1 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 • Mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition 1.9 ± 0.2 ■ Features 0.95 0.65 ± 0.15 2 VR 30 V Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) 700 mA Non-repetitive peak forward surge current* IFSM 5 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +150 °C + 0.1 0.16 − 0.06 Unit 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Rating 0.8 Reverse voltage (DC) Symbol + 0.2 Parameter 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M4P Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 80 µA 0.55 V Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IZ = 700 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 120 pF Reverse recovery time*2 trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 7.5 ns Rth(j-a)(1) 420 °C/W Rth(j-a)(2) 330 °C/W Thermal resistance (1) Thermal resistance (2)*1 Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. *1 : Obtained by fixing the element to the printed-circuit board (copper foil area 0.8 mm × 20 mm) *2 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3X701 Schottky Barrier Diodes (SBD) IF V F Ta = 125°C 0.7 Ta = 125°C 75°C 25°C − 20°C 10−2 10−3 10−4 Reverse current IR (µA) 103 Forward voltage VF (V) Forward current IF (A) 104 0.8 10−1 0.6 0.5 IF = 700 mA 0.4 0.3 100 mA 0.2 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 25°C 10−1 0 40 80 120 160 200 IR T a 10 1 120 Ambient temperature Ta 160 (°C) 25 30 IF(surge) tW 250 200 150 100 50 0 80 20 1 000 200 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 100 40 15 Ta = 25°C 15 V 6V 0 10 Ct VR VR = 30 V 0.1 −40 5 Reverse voltage VR (V) 300 1 000 0 Ambient temperature Ta (°C) 10 000 Reverse current IR (µA) 10 1 Forward voltage VF (V) 2 75°C 102 10 mA 0.1 10−5 IR VR VF Ta 1 0 5 10 15 20 25 Reverse voltage VR (V) 30 300 IF(surge) tW 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 Pulse width tW (ms) 100