IRFAC40, IRFAC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6.2A and 5.4A, 600V Description • rDS(ON) = 1.2Ω and 1.6Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE Formerly Developmental Type TA17426. BRAND IRFAC40 TO-204AA IRFAC40 IRFAC42 TO-204AA IRFAC42 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-1 File Number 2156.2 IRFAC40, IRFAC42 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFAC40 IRFAC42 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 600 600 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 600 600 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 6.2 3.9 5.4 3.4 A A Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 25 22 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 125 W Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 W/oC Single Pulse Avalanche Energy Rating (Note 3) (Figures 15, 16) . . . . . . . . . . . . . . . EAS 570 570 mJ Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 600 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125oC - - 250 µA IRFAC40 6.2 - - µA IRFAC42 5.4 - - µA - - ±100 nA IRFAC40 - 0.97 1.2 Ω IRFAC42 - 1.2 1.6 Ω 4.7 70 - S - 13 20 ns - 18 27 ns - 55 83 ns - 20 30 ns - 40 60 nC - 5.5 - nC - 20 - nC Zero Gate Voltage Drain Current On-State Drain Current (Note 4) Gate to Source Leakage Drain to Source On Resistance (Note 2) Forward Transconductance (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V VGS = ±20V VGS = 10V, ID = 3.4A (Figures 8, 9) VDS ≥ 50V, ID = 3.4A (Figure 12) VDD = 0.5V x Rated BVDSS, ID ≈ 6.2A, RG = 9.1Ω, RL = 47Ω, VGS = 10V (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = 10V, ID = 6.2A, VDSS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 5-2 IRFAC40, IRFAC42 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1300 - pF Output Capacitance COSS 160 pF Reverse Transfer Capacitance CRSS 30 pF Internal Drain Inductance LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 5.0 - nH - 13 - nH - - 1.0 oC/W - - 30 oC/W MIN TYP MAX UNITS - - 6.2 A - - 25 A D LD G LS S Internal Source Inductance LS Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge VSD TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 13) - - 1.5 V trr TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 200 450 940 ns QRR TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 1.8 3.8 7.9 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25Ω, peak IAS = 6.8A. See Figures 15, 16. 5-3 IRFAC40, IRFAC42 Typical Performance Curves Unless Otherwise Specified 10 1.0 8 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 6 IRFAC40 4 IRFAC42 2 0.2 0 0 50 100 0 150 25 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE 0.001 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-4 10-3 10-2 0.1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 IRFAC40 10µs ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) IRFAC42 10 IRFAC40 100µs IRFAC42 1ms 1 10ms TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 VGS = 10V VGS = 5.5V VGS = 6.0V 8 80µs PULSE TEST 6 VGS = 5.0V 4 VGS = 4.5V 2 DC VGS = 4.0V 102 103 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 104 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 0 60 120 180 240 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 5-4 300 IRFAC40, IRFAC42 Typical Performance Curves 10 10 VGS =10V 80µs PULSE TEST VDS ≥ 100V 80µs PULSE TEST VGS = 6.0V 8 VGS = 5.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Unless Otherwise Specified (Continued) 6 VGS = 5.0V 4 2 VGS = 4.5V 1 TJ = 25oC TJ = 150oC 0.1 VGS = 4.0V 0 0 3 6 9 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 15 0 3.0 5 80µs PULSE TEST 4 3 VGS = 10V VGS = 20V 2 1 0 0 6 12 18 ID, DRAIN CURRENT (A) 24 1.25 2.4 1.8 1.2 0.6 -40 -20 0 20 40 60 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD C, CAPACITANCE (pF) 2400 1.05 0.95 0.85 CISS 1800 1200 COSS 600 -20 100 120 140 160 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.15 -40 80 TJ, JUNCTION TEMPERATURE (oC) ID = 250µA 0.75 -60 ID = 3.4A VGS = 10V 0 -60 30 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 10 FIGURE 7. TRANSFER CHARACTERISTICS NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE FIGURE 6. SATURATION CHARACTERISTICS 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 20 40 60 80 0 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) CRSS 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRFAC40, IRFAC42 Typical Performance Curves ISD, SOURCE TO DRAIN CURRENT (A) 100 VDS ≥ 100V 80µs PULSE TEST TJ = 25oC 8 TJ = 150oC 6 4 2 0 10 TJ = 150oC TJ = 25oC 1 0.1 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 0.3 0.6 0.9 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 10 Unless Otherwise Specified (Continued) ID = 6.2A 16 VDS = 120V VDS = 240V 12 VDS = 360V 8 4 0 0 12 24 36 48 60 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 6-6 1.5 IRFAC40, IRFAC42 Test Circuits and Waveforms VDS BVDSS tP L VDS IAS VARY tP TO OBTAIN VDD + RG REQUIRED PEAK IAS VDD - VGS DUT tP 0V 0 IAS 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr VDS RL 90% + RG - 10% 0 VDD 90% 10% 90% DUT VGS 0 50% 50% PULSE WIDTH 10% VGS FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR VDD Qg(TOT) 12V BATTERY 0.2µF SAME TYPE AS DUT 50kΩ Qgd Qgs 0.3µF D IG(REF) VDS 0 DUT G S 0 IG CURRENT SAMPLING RESISTOR VGS IG(REF) VDS ID CURRENT SAMPLING RESISTOR 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7