IRF510, IRF511, IRF512, IRF513 Semiconductor 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA17441. Symbol D Ordering Information PART NUMBER PACKAGE BRAND IRF510 TO-220AB IRF510 IRF511 TO-220AB IRF511 IRF512 TO-220AB IRF512 IRF513 TO-220AB IRF513 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-1 File Number 1573.2 IRF510, IRF511, IRF512, IRF513 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF510 IRF511 IRF512 IRF513 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS 100 80 100 80 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . VDGR 100 80 100 80 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 5.6 5.6 4.9 4.9 A TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 4 4 3.4 3.4 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 20 20 18 18 A Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD 43 43 43 43 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.29 0.29 0.29 0.29 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 19 19 19 19 mJ Operating and Storage Temperature Range. . . . . . . . . TJ, TSTG -55 to 175 -55 to 175 -55 to 175 -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from 25ase for 10s . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRF510 IRF512 100 - - V IRF511, IRF513 80 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 150oC - - 250 µA 5.6 - - A 4.9 - - A - - ±100 nA IRF510, IRF511 - 0.4 0.54 Ω IRF512, IRF513 - 0.5 0.74 Ω 1.3 2.0 - S - 8 11 ns - 25 36 ns - 15 21 ns - 12 21 ns - 5.0 7.7 nC - 2.0 - nC - 3.0 - nC Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) SYMBOL BVDSS VGS(TH) IDSS ID(ON) IRF510, IRF511 TEST CONDITIONS VGS = 0V, ID = 250µA, (Figure 10) VGS = VDS, ID = 250µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V, (Figure 7) IRF512, IRF513 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) IGSS rDS(ON) gfs td(ON) tr td(OFF) VGS = ±20V VGS = 10V, ID = 3.4A, (Figures 8, 9) VGS = 50V, ID = 3.4A, (Figure 12) ID ≈ 5.6A, RGS = 24Ω , VDD = 50V, RL = 9Ω VDD = 50V, VGS = 10V, (Figures 17, 18) MOSFET switching times are essentially independent of operating temperature tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20) Gate charge is essentially independent of operating temperature 5-2 IRF510, IRF511, IRF512, IRF513 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS TYP MAX UNITS - 135 - pF Input Capacitance CISS Output Capacitance COSS - 80 - pF Reverse-Transfer Capacitance CRSS - 20 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 3.5 oC/W - - 80 oC/W MIN TYP MAX UNITS - - 5.6 A - - 20 A - - 2.5 V Internal Drain Inductance LD VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) MIN Measured From the Contact Screw On Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Source Inductance LS Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad S Free air operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM Test Conditions Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge VSD TJ = 25oC, ISD = 5.6A, VGS = 0V (Figure 13) trr TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 4.6 96 200 ns QRR TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 0.17 0.4 0.83 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, start TJ = 25oC, L = 910µH, RG = 25Ω, peak IAS = 5.6A (See Figure 15, 16). 5-3 IRF510, IRF511, IRF512, IRF513 Typical Performance Curves Unless Otherwise Specified 10 POWER DISSIPATION MULTIPLIER 1.2 8 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 6 IRF510, IRF511 4 IRF512, IRF513 2 0.2 0 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 25 0 150 175 25 50 75 100 150 125 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 10 0.5 1 0.2 0.1 0.05 0.1 PDM 0.02 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.01 10-5 10-4 10-3 10-2 0.1 1 10 t1, RECTANGULAR PULSE DURATION (S) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE ID, DRAIN CURRENT (A) IRF510, 1 10 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) VGS = 10V 80µs PULSE TEST ID, DRAIN CURRENT (A) 100 10µs 10 IRF512, 3 IRF510, 1 100µs IRF512.3 1ms 1 TC = 25oC TJ = 175oC SINGLE PULSE 0.1 1 DC IRF511, 3 IRF510, 2 102 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 VGS = 8V 6 VGS = 7V 4 VGS = 6V 2 VGS = 5V 0 103 VGS = 4V 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 50 IRF510, IRF511, IRF512, IRF513 Typical Performance Curves Unless Otherwise Specified ID(ON), ON-STATE DRAIN CURRENT (A) 10 80µs PULSE TEST ID, DRAIN CURRENT (A) VGS = 10V 8 VGS = 8V 6 VGS = 7V 4 VGS = 6V 2 VGS = 5V 0 VGS = 4V 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) (Continued) 10 VDS ≥ 50V 80µs PULSE TEST 1 0.1 10-2 0 10 FIGURE 6. SATURATION CHARACTERISTICS 3.0 NORMALIZED ON RESISTANCE ON RESISTANCE (Ω) rDS(ON), DRAIN TO SOURCE 4.0 3.0 2.0 VGS = 10V VGS = 20V 1.0 4 8 12 16 2.4 1.8 1.2 0.6 0 -60 -40 20 -20 0 20 40 60 80 100 120 140 160 180 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 500 ID = 250µA 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 10 ID = 3.4A VGS = 10V 80µs PULSE TEST 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 5.0 0 TJ = 25oC TJ = 175oC 1.05 0.95 0.85 VGS = 0V, f = 1MHz CISS = CGS + CGD 400 CRSS = CGD COSS ≈ CDS + CGD 300 200 CISS COSS 100 CRSS 0.75 -60 -40 -20 0 20 40 60 80 0 100 120 140 160 180 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 1 2 5 10 2 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 102 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF510, IRF511, IRF512, IRF513 Typical Performance Curves Unless Otherwise Specified 100 2.0 ISD, SOURCE TO DRAIN CURRENT (A) VDS ≥ 50V 80µs PULSE TEST TJ = 25oC 1.5 TJ = 175oC 1.0 0.5 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 1 TJ = 175oC TJ = 25oC 0.1 0 10 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 2.5 (Continued) ID = 3.4A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 0 0 2 4 6 8 Qg(TOT), TOTAL GATE CHARGE (nC) 10 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 2.0 IRF510, IRF511, IRF512, IRF513 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORM 5-7