IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. • Linear Transfer Characteristics Formerly developmental type TA17451. • rDS(ON) = 2.4Ω and 3.2Ω • SOA is Power Dissipation Limited • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER G PACKAGE BRAND IRFD1Z0 HEXDIP IRFD1Z0 IRFD1Z1 HEXDIP IRFD1Z1 IRFD1Z2 HEXDIP IRFD1Z2 IRFD1Z3 HEXDIP IRFD1Z3 S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 2313.1 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . .VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg IRFD1Z0 100 100 0.5 4.0 ±20 1.0 0.008 -55 to 150 IRFD1Z1 60 60 0.5 4.0 ±20 1.0 0.008 -55 to 150 IRFD1Z2 100 100 0.4 3.2 ±20 1.0 0.008 -55 to 150 IRFD1Z3 60 60 0.4 3.2 ±20 1.0 0.008 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRFD1Z0, IRFD1Z2 100 - - V IRFD1Z1, IRFD1Z3 60 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 250 µA 0.5 - - A 0.4 - - A - - ±100 nA IRFD1Z0, IRFD1Z1 - 2.2 2.4 Ω IRFD1Z2, IRFD1Z3 - 2.8 3.2 Ω 0.25 0.35 - S VDD ≅ 0.5 x Rated BVDSS, ID = 0.25A, RG = 50Ω (Figures 14, 15, 16) RL = 198Ω for BVDSS = 100V RL = 118Ω for BVDSS = 60V MOSFET Switching Times are Essentially Independent of Operating Temperature - 10 20 ns - 15 25 ns - 15 25 ns - 10 20 ns VGS = 10V, ID = 1.2A, VDS = 0.8 x Rated BVDSS (Figures 13, 16, 17) Gate Charge is Essentially Independent of Operating Temperature - 2.0 3.0 nC - 1.0 - nC - 1.0 - nC - 50 - pF - 20 - pF - 5 - pF Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) SYMBOL BVDSS VGS(TH) IDSS ID(ON) IRFD1Z0, IRFD1Z1 TEST CONDITIONS ID = 250µA, VGS = 0V (See Figure 9) VGS = VDS, ID = 250µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (See Figure 6) IRFD1Z2, IRFD1Z3 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = ±20V ID = 0.25A, VGS = 10V (See Figures 7, 8) VDS > ID(ON) x rDS(ON)MAX, ID = 0.25A VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) 5-2 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS Internal Drain Inductance LD Measured From The Drain Lead, 2mm (0.08in) From Package to Center of Die Internal Source Inductance LS Measured From The Source Lead, 2mm (0.08in) From Header to Source Bonding Pad MIN TYP MAX UNITS - 4.0 - nH - 6.0 - nH - - 120 oC/W MIN TYP MAX UNITS - - 0.5 A - - 0.4 A - - 4.0 A - - 3.2 A Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S Thermal Resistance Junction to Ambient RθJA Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current SYMBOL ISD IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 Pulse Source to Drain Current TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G ISDM IRFD1Z0, IRFD1Z1 S IRFD1Z2, IRFD1Z3 Source to Drain Diode Voltage (Note 2) VSD IRFD1Z0, IRFD1Z1 TA = 25oC, ISD = 0.5A, VGS = 0V - - 1.4 V IRFD1Z2, IRFD1Z3 TA = 25oC, ISD = 0.4A, VGS = 0V - - 1.3 V trr TJ = 150oC, ISD = 0.5A, dISD/dt = 100A/µs - 100 - ns QRR TJ = 150oC, ISD = 0.5A, dISD/dt = 100A/µs - 0.2 - µC Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. Typical Performance Curves Unless Otherwise Specified 0.5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0.4 IRFD1Z0, IRFD1Z1 0.3 IRFD1Z2, IRFD1Z3 0.2 0.1 0 0 25 50 75 100 125 TA , AMBIENT TEMPERATURE (oC) 150 25 FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE 50 75 100 125 TA , AMBIENT TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE 5-3 150 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Typical Performance Curves Unless Otherwise Specified (Continued) 2.0 10 10V IRFD1Z2, IRFD1Z3 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 100µs 0.1 1ms o 0.01 TJ = 150 C MAX SINGLE PULSE 1 8V 1.2 7V 0.8 VGS = 6V 0.4 10ms DC IRFD1Z0, IRFD1Z2 IRFD1Z1, IRFD1Z3 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs 1.6 5V 4V 0 0 1000 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs 10V 9V ID, DRAIN CURRENT (A) 1.6 8V 1.2 7V 0.8 VGS = 6V 0.4 5V 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.2 PULSE DURATION = 80µs VDS > ID(ON) x rDS(ON)MAX 1.0 TJ = 25oC TJ = 125oC 0.6 0.4 0.2 0 0 5 2 4 6 10 8 12 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. TRANSFER CHARACTERISTICS 8 2.5 VGS = 10V VGS = 10V, ID = 0.5A NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 2µs rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) TJ = -55oC 0.8 FIGURE 5. SATURATION CHARACTERISTICS 6 4 VGS = 20V 2 0 50 FIGURE 4. OUTPUT CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 2.0 9V 10µs ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IRFD1Z0, IRFD1Z1 0 1 2 ID, DRAIN CURRENT (A) 3 2.0 1.5 1.0 0.5 0 -40 4 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-4 160 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Typical Performance Curves Unless Otherwise Specified (Continued) 100 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.15 C, CAPACITANCE (pF) 80 1.05 0.95 60 CISS 40 COSS 20 0.85 CRSS 0.75 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) 0 160 FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 0.6 TJ = -55oC 0.5 TJ = 25oC 0.4 TJ = 125oC 0.3 0.2 0.1 50 1.0 0.50 0.75 1.0 ID , DRAIN CURRENT (A) 1.25 1.5 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE (V) 20 TJ = 25oC TJ = 150oC 0.1 0 0.25 30 40 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 PULSE DURATION = 80µs 0 10 0 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD 0 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE ID = 1.2A VDS = 20V 15 VDS = 50V VDS = 80V IRFD1Z0, IRFD1Z2 10 5 0 0 2 3 1 QG , TOTAL GATE CHARGE (nC) 4 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE VOLTAGE 5-5 2.0 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 0 10% 90% DUT VGS VGS 0 10% VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH FIGURE 15. RESISTIVE SWITCHING WAVEFORMS FIGURE 14. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR IG(REF) VDS ID CURRENT SAMPLING RESISTOR 0 FIGURE 17. GATE CHARGE WAVEFORMS FIGURE 16. GATE CHARGE TEST CIRCUIT 5-6