Image intensifiers

Image
Intensifier
Image intensifiers (often abbreviated as I. I.) were primarily developed for nighttime viewing and surveillance under
moonlight or starlight. Image intensifiers are capable of detecting and amplifying low-light-level images (weak emissions or
reflected light) for bringing them into view as sharp contrast images. Image intensifier applications have spread from
nighttime viewing to various fields including industrial product inspection and scientific research, especially when used
with CCD cameras (intensified CCD or ICCD). Gate operation models are also useful for observation and motion analysis of
high-speed phenomena (high-speed moving objects, fluorescence lifetime, bioluminescence and chemiluminescence
images). Some major image intensifier applications are introduced here.
APPLICATION EXAMPLE
BIOTECHNOLOGY
INDUSTRY
Fluorescence imaging
Observing engine combustion
Soot scattering images (taken by image intensifier)
Direct flame images (taken by high-speed shutter camera)
ATDC: After Top Dead Center, θ: Crank angle with respect to ATDC
How soot is generated can be observed by viewing low-level scattering
light resulting from laser irradiation.
Mitochondria inside a nerve system culture cell NG108-15, specificity labeled with fluorescent dye MITO TRACKER.
ELECTRONICS
ASTRONOMY
PDP (Plasma display panel) emission
Celestial body observation
0.47 µs
0.71 µs
1.09 µs
1.37 µs
Star wind from the protostar L1551-IRS5 (red star at upper left),
twinkling in yellowish green when it collides with surrounding gases.
Very-low plasma emission occurring over an ultra-short duration can be observed. (*Plasma emission is superimposed on the PDP electrode. Top left
shows elapsed time after applying a voltage to the each others electrode.
Photo courtesy of National Astronomical Observatory in Japan/In cooperation with NHK (Nihon Hoso Kyokai)
OTHER-APPLICATIONS
●Low-light-level imaging ●Multi-channel spectroscopy ●High-speed motion analysis
●Bioluminescence or chemiluminescence imaging ●UV range imaging (Corona discharge observation)
FEATURES
Feature
1 WIDE VARIATIONS
A wide variety of characteristics is presented including spectral response by choosing a photocathode and
window material combination, photocathode size, the number of MCPs (gain) and gate time. You are sure to
find the device that best matches your application from our complete lineup of standard or custom products.
■Spectral Response Characteristics
100
TII B00113EA
Suffix
-71
-73
-74
-76
Non
-01
-02
-03
-74
-73
QUANTUM EFFICIENCY: QE (%)
-71
10
-76
1
Photo Cathode
GaAs
Extended Red GaAsP
GaAsP
InGaAs
Multialkali
Extended Red Multialkali
Bialkali
Cs-Te
Input Window
Borosilicate Glass
Borosilicate Glass
Borosilicate Glass
Borosilicate Glass
Synthetic Silica
Synthetic Silica
Synthetic Silica
Synthetic Silica
The sensitivity at short wavelengths charges
with typical transmittance of window materials.
Please refer to figure 4 (P6).
0.1
-03
-02
-01
No suffix.
0.01
100
200
300
400
500
600
700
WAVELENGTH (nm)
1
800
900
1000
1100
NOTE: For Gen II, gate operation types may
have slightly lower sensitivity in the
ultraviolet region.
Feature
2 HIGH RESOLUTION
Clear, sharp images can be obtained with no chicken wire.
Feature
3 COMPACT AND LIGHTWEIGHT
Proximity-focused configuration is more compact and lightweight than inverter type.
Feature
4 NO DISTORTION
Images without distortion can be obtained even at periphery.
Feature
5 HIGH-SPEED GATE OPERATION
High-speed gated image intensifiers are available for imaging and motion analysis of high-speed phenomena.
Feature
6 HIGH SENSITIVITY GaAs AND GaAsP PHOTOCATHODE
Excellent image intensification with an even higher signal-to-noise ratio is achieved by combining our
filmless MCP fabrication technology with the high-sensitivity GaAs and GaAsP photocathode.
■STRUCTURE
In conventional image intensifiers having a crystalline photocathode, a thin film was deposited over the surface of the MCP
(microchannel plate) to prevent ion feedback. Our improved fabrication method successfully eliminates this thin film. This filmless
structure eliminates the loss of electrons passing through the MCP and therefore improves the signal-to-noise ratio more than 20 %
compared to filmed image intensifiers, and the life is longer.
●Filmless MCP Type
●Filmed MCP Type
MCP
INPUT WINDOW
THIN FILM IS USED TO PREVENT ION FEEDBACK
(ELECTRON TRANSMITTANCE: 70 % to 80 %)
PHOSPHOR SCREEN
OUTPUT WINDOW
INCIDENT
LIGHT
p
p
p
p
p
p
p
p
p
p
p
p
e
p
p
e
e
e
p
p
p
e
e
Vk = 200 V
SN Ratio
20 % UP
OUTPUT
LIGHT
ELECTRON
Vk
Vmcp
High Resolution
64 Lp/mm (Typ.)
Vs
Vk
: CATHODE VOLTAGE
Vmcp : MCP VOLTAGE
: PHOSPHOR SCREEN
Vs
VOLTAGE
INCIDENT
LIGHT
p
p
p
p
p
p
p
p
p
p
p
p
Vk = 800 V
ELECTRON
OUTPUT
LIGHT
e
p
p
e
e
e
p
e
e
p
Vk
Vmcp
Vk
: CATHODE VOLTAGE
Vmcp : MCP VOLTAGE
: PHOSPHOR SCREEN
Vs
VOLTAGE
Vs
Cathode Voltage Long Life
200 V
■Low "halo" effect
Minimizes the halo effect that makes annular light appear around bright spots.
●Filmless MCP Type
●Filmed MCP Type
●System Configuration
LED
[GREEN]
LENS
I.I.
LENS
CCD Camera
halo
I.I. Output Window
2
●STRUCTURE AND OPERATION
STRUCTURE
Figure 1 shows the structure of a typical image intensifier. A photocathode
that converts light into photoelectrons, a microchannel plate (MCP) that
multiplies electrons, and a phosphor screen that reconverts electrons into
light are arranged in close proximity in an evacuated ceramic case. The
close proximity design from the photocathode to the phosphor screen
delivers an image with no geometric distortion even at the periphery.
Types of image intensifiers are often broadly classified by "generation".
The first generation refers to image intensifiers that do not use an MCP
and where the gain is usually no greater than 100 times. The second
generation image intensifiers use MCPs for electron multiplication. Types
using a single-stage MCP have a gain of about 10000.
A variety of photocathodes materials are currently in use. Of these,
photocathodes made of semiconductor crystals such as GaAs and
GsAsP are called "third generation". These photocathodes offer extremely
high sensitivity. Among the first and second generation image intensifiers,
there are still some inverter types in which an image is internally inverted
by the electron lens, but these are rarely used now because of geometric
distortion.
by this potential difference towards the MCP and multiplied there. An
intensified image can then be obtained on the phosphor screen.
When the gate is OFF however, the photocathode has a higher potential
than the MCP-in (reverse-biased) so the electrons emitted from the
photocathode are forced to return to the photocathode by this reversebiased potential and do not reach the MCP. In the gate OFF mode, no
output image appears on the phosphor screen even if light is incident on
the photocathode.
To actually turn on the gate operation, a high-speed, negative polarity
pulse of about 200 volts is applied to the photocathode while the MCP-in
potential is fixed. The width (time) of this pulse will be the gate time.
The gate function is very effective when analyzing high-speed optical
phenomenon. Gated image intensifiers and ICCDs (intensified CCDs)
having this gate function are capable of capturing instantaneous images
of high-speed optical phenomenon while excluding extraneous signals.
Figure 3: Gate Operation Circuits
Gate ON at point (a)
ELECTRONS
PHOTOELECTRONS
PHOSPHOR
MCP
SCREEN
PHOTOCATHODE
Figure 1: Structure of Image Intensifier
GATE ON
PULSE
OUTPUT
WINDOW
(FIBER OPTIC
PLATE)
MCP
(ELECTRON
MULTIPLICATION)
INPUT
WINDOW
0
–200 V
LIGHT
0V
LIGHT
VG
(a)
C
PULSE
GENERATOR
PHOTOCATHODE
(LIGHT
PHOTOELECTRONS)
R
VB
PHOSPHOR SCREEN
(ELECTRON
VMCP
VS
ex.: VB = +30 V
VG = -230 V
LIGHT)
TII C0046EA
VMCP ......MCP-in TO MCP-out VOLTAGE
VS ......MCP-out TO
PHOSPHOR SCREEN VOLTAGE
VB ......BIAS VOLTAGE
VG ......GATE PULSE
OPERATING PRINCIPLE
Figure 2 shows how light focused on the photocathode is converted into
photoelectrons. The number of photoelectrons emitted at this point is
proportional to the input light intensity. These electrons are then
accelerated by a voltage applied between the photocathode and the MCP
input surface (MCP-in) and enter individual channels of the MCP. Since
each channel of the MCP serves as an independent electron multiplier,
the input electrons impinging on the channel wall produce secondary
electrons. This process is repeated several tens times by the potential
gradient across the both ends of the MCP and a large number of
electrons are in this way released from the output end of the MCP. The
electrons multiplied by the MCP are further accelerated by the voltage
between the MCP output surface (MCP-out) and the phosphor screen,
and strike the photocathode which emits light according to the amount of
electrons. Through this process, an input optical image is intensified about
10 000 times (in the case of a one-stage MCP) and appears as the output
image on the phosphor screen.
Figure 2: Operating Principle
PHOTOCATHODE
(PHOTONS ELECTRONS)
MCP(ELECTRON MULTIPLICATION:
1000 to 10000 TIMES)
PHOSPHOR SCREEN
(ELECTRONS PHOTONS)
LOW-LEVEL
LIGHT IMAGE
INPUT WINDOW
INTENSIFIED
LIGHT IMAGE
VACUUM
ELECTRONS
OUTPUT WINDOW:
FIBER OPTIC PLATE
TII C0051ED
GATE OPERATION
An image intensifier can be gated to open or close the optical shutter by
varying the potential between the photocathode and the MCP-in. Figure
3 shows typical gate operation circuits.
When the gate is ON, the photocathode potential is lower than the MCPin potential so the electrons emitted from the photocathode are attracted
3
TII C0047EA
Gate OFF at point (b)
PHOTOELECTRONS
PHOTOCATHODE
MCP PHOSPHOR SCREEN
0
(b)
+30 V
LIGHT
0V
C
PULSE
GENERATOR
R
VB
VMCP
VS
TII C0048EA
●GLOSSARY OF TERMS
Photocathode Sensitivity
Gate Operation
Luminous Sensitivity: The output current from the photocathode per
the input luminous flux from a standard tungsten lamp (color
temperature: 2856 K), usually expressed in µA/lm (microamperes per
lumen). Luminous sensitivity is a term originally for sensors in the
visible region and is used in this catalog as a guideline for sensitivity.
Radiant Sensitivity: The output current from the photocathode per
the input radiant power at a given wavelength, usually expressed in
A/W (amperes per watt).
Quantum Efficiency (QE): The number of photoelectrons emitted
from the photocathode divided by the number of input photons,
generally expressed in % (percentage). The quantum efficiency and
radiant sensitivity have the following relation at a given wavelength λ.
Most photocathodes have a high electrical resistance (surface
resistance) and are not suited for gate operation when used separately.
To allow gate operation at a photocathode, a low-resistance
photocathode electrode (metallic thin film) is usually deposited
between the photocathode and the incident window. Gate operation
can be performed by applying a high-speed voltage pulse to the lowresistance photocathode electrode.
Since the semiconductor crystals of the GaAs and GaAsP
photocathodes themselves have low resistance, no photocathode
electrode film needs to be deposited for gate operation.
QE =
S × 1240
× 100 (%)
λ
S: Radiant sensitivity (A/W)
λ : Wavelength (nm)
Luminous Emittance
This is the luminous flux density emitted from a phosphor screen and
is usually expressed in lm/m2 (lumens per square meter). The
luminous emittance from a completely diffused surface emitting an
equal luminance in every direction is equivalent to the luminance
(cd/m2) multiplied by π.
Gain
Gain is designated by different terms according to the photocathode
spectral response range. Luminous emittance gain is used for image
intensifiers having sensitivity in the visible region. Radiant emittance
gain and photon gain are used for image intensifiers intended to detect
invisible light or monochromatic light so that light intensity must be
expressed in units of electromagnetic energy
Photon gain is also used to evaluate image intensifiers using a P-47
phosphor (see Figure 5) whose emission spectrum is shifted from the
relative visual sensitivity.
Luminous Gain: The ratio of the phosphor screen luminous emittance
(lm/m2) to the illuminance (lx) incident on the photocathode.
Radiant Emittance Gain: The ratio of the phosphor screen radiant
emittance density (W/m2) to the radiant flux density (W/m2) incident on
the photocathode. In this catalog, the radiant emittance gain is
calculated using the radiant flux density at the wavelength of maximum
photocathode sensitivity and the radiant emittance density at the peak
emission wavelength (545 nm) of a P-43 phosphor screen.
Photon Gain: The ratio of the number of input photons per square
meter at a given wavelength to the number of photons per square
meter emitted from the phosphor screen.
MTF (Modulation Transfer Function)
When a black-and-white stripe pattern producing sine-wave changes
in brightness is focused on the photocathode, the contrast on the
output phosphor screen drops gradually as the stripe pattern density is
increased. The relationship between this contrast and the stripe
density (number of line-pairs per millimeter) is referred to as the MTF.
Limiting Resolution
The limiting resolution shows the ability to delineate image detail. This
is expressed as the maximum number of line-pairs per millimeter on
the photocathode (1 line-pair = a pair of black and white lines) that can
be discerned when a black-and-white stripe pattern is focused on the
photocathode. In this catalog, the value at 5 % MTF is listed as the
limiting resolution.
EBI (Equivalent Background Input)
This indicates the input illuminance required to produce a luminous
emittance from the phosphor screen, equal to that obtained when the
input illuminance on the photocathode is zero. This indicates the
inherent background level or lower limit of detectable illuminance of an
image intensifier.
Shutter Ratio
The ratio of the brightness on the phosphor screen during gate ON to
that during gate OFF, measured when a gated image intensifier is
operated under standard conditions.
4
●SELECTION CRITERIA (Factors for making the best choice)
Selectable Range
Description/Value
The 25 mm (16 mm × 16 mm A) diameter type transfers a larger amount of image
18 mm
(13.5 mm × 10 mm) A information to a readout device coupled by using a reduction optical system such as a relay
lens and tapered FOP. This lets you acquire high resolution images.
25 mm
(16 mm × 16 mm) A The 18 mm diameter type (13.5 mm × 10 mm) is compatible with 1-inch CCDs.
Features
Transmitting Wavelength
Window Type
160 nm or longer Standard input window with high UV transmittance.
Synthetic silica
Input Window
Optical element that transmits an optical image with high efficiency and
Fiber optic Plate
★Select the window
350 nm or longer
according to the
no distortion. An image should be focused on the front surface of FOP.
(FOP)
required sensitivity at
Alkali halide crystal that transmits VUV radiation yet offers low
short wavelengths.
115 nm or longer
MgF2
deliquescence.
300 nm or longer Most common glass material used in the visible to near IR region. Not suitable for UV detection.
Borosilicate glass
Features
Photocathode Type Spectral Response
Made from 3 kinds of alkali metals, having high sensitivity from the UV
Up to 900 nm
Multialkali
through near IR region.
Made from 3 kinds of alkali metals, having high sensitivity extending to
Extended red
Up to 950 nm
950 nm in the near IR region. Ideal for nighttime viewing.
multialkali
Photocathode
Made from 2 kinds of alkali metals, having sensitivity from the UV to
Up to 650 nm
Bialkali
★Select the
visible region. Background noise is low.
photocathode
Having
sensitivity only in the UV region and almost insensitive to wavelengths
according to the
Cs-Te
Up to 320 nm
required sensitivity at
longer than 320 nm and visible light. Often called "solar blind photocathode".
long wavelengths.
Made from group 3-V crystal having high sensitivity from the visible to
GaAs
Up to 920 nm
near IR region. Spectral response curve is nearly flat from 450 to 850 nm.
Made from group 3-V crystal having very high sensitivity in the visible
GaAsP
Up to 720 nm
region (quantum efficiency 50 % Typ. at 530 nm).
Made from group 3-V crystal having high sensitivity at 1 µm. This
InGaAs
Up to 1100 nm
photocathode is suitable for laser ranging application used by YAG laser.
Items
Effective Area
★Select the
effective area that
matches the
readout method.
MCP
★Select the number
of stages according
to the required gain.
Phosphor Screen
★Select the decay
time that matches
the readout method
and application, and
the spectral emission
that matches the readout device sensitivity.
Output Window
★Select the window
that matches the
readout method.
1 stage
Gain: about 103
2 stage
Gain: about 105
Phosphor Type
P24
P43
P46
P47
Fiber optic plate
(FOP)
Borosilicate glass
Inverting concave
fiber optics
Gate Time
★Select the gate
time that matches
the required time
resolution.
Peak Emission
Relative C
10 %
Emission Color
NOTE
Power Efficiency
Wavelength [nm]
Decay Time
Green
500
0.4
3 µs to 40 µs B
1 ms
Standard
Yellowish green
545
1
0.2 µs to 0.4 µs B
Yellowish green Short decay time
510
0.3
0.11 µs
Short decay time
Purplish blue
430
0.3
Standard output window and ideal for direct coupling to a CCD with FOP input window, allowing
highly efficient readout. If the phosphor screen is not at ground potential, a NESA (transparent
conductive film) may be needed to prevent noise generated by a high voltage from getting into
the CCD. When a relay lens is used, it should be focused on the edge of the FOP.
For relay lens readout. The relay lens should be focused on the phosphor screen surface.
FOP twisted 180 ° to invert an image. This output window is only for nighttime viewing
applications where the output image is directly viewed by eye. Using a twisted fiber optics
reduces the eyepiece length, making the nighttime viewing unit more compact.
5 ns
Metallic thin film type
10 ns
A: at crystal photocathode
B: Depends on the input pulse width. Refe to Figuer 6 on page 6.
C: Relative value with output from P43 set as 1. Measured with 6 kV voltage applied.
5
long decay time is suggested to minimize flicker. Figure 5 shows
typical phosphor spectral emission characteristics and Figure 6 shows
typical decay characteristics.
We also supply phosphor screens singly for use in detection of
ultraviolet radiation, electron beams and X-rays.
INPUT WINDOWS
Figure 4: Typical Transmittance of Window Materials
100
TII B0099EC
Figure 5: Typical Phosphor Spectral Emission Characteristics
100
MgF2
FIBER *
OPTIC
PLATE
10
1
100
120
160
200
240
300
400
WAVELENGTH (nm)
500
EYE
RESPONSE
P43
80
P24
60
40
P46
20
* Collimated transmission
0
350
PHOTOCATHODE
450
500
550
600
650
700
WAVELENGTH (nm)
102
TII B0079EH
P43 DC*
MCP (MICROCHANNEL PLATE)
An MCP is a secondary electron multiplier consisting of an array of
millions of very thin glass channels (glass pipes) bundled in parallel
and sliced in the form of a disk. Each channel works as an
independent electron multiplier. When an electron enters a channel
and hits the inner wall, secondary electrons are produced. These
secondary electrons are then accelerated by the voltage (VMCP)
applied across the both ends of the MCP along their parabolic
trajectories to strike the opposite wall where additional secondary
electrons are released. This process is repeated many times along the
channel wall and as a result, a great number of electrons are output
from the MCP.
The dynamic range (linearity) of an image intensifier depends on the
so-called strip current which flows through the MCP during operation.
When a higher linearity is required, using a low-resistance MCP is
recommended so that a large strip current will flow through the MCP.
The channel diameter of typical MCPs is 6 µm.
MCP Structure and Operation
400
Figure 6: Typical Decay Characteristics
RELATIVE INTENSITY (%)
A photocathode converts light into electrons. This conversion efficiency
depends on the wavelength of light. The relationship between this
conversion efficiency (photocathode radiant sensitivity or quantum
efficiency) and wavelength is called the spectral response
characteristic. (See spectral response characteristics on page 1.)
101
P46
100
P24
P47
10-1
100 ns
100 ns
100 ns 1 ms
1 ms
1 ms
10-2
INPUT LIGHT
PULSE WIDTH
10-3
10-8
SCREEN PEAK CURRENT 8 nA/cm2
10-7
10-6
10-5
10-4
10-3
10-2
10-1
DECAY TIME (s)
* Decay time obtained following to the continuous input light removal.
OUTPUT WINDOW MATERIAL
Please select the desired type according to the readout method.
CHANNEL
CHANNEL WALL
OUTPUT
ELECTRODE
INPUT
ELECTRON
OUTPUT
ELECTRONS
INPUT ELECTRODE
TII B0078EH
P47
BOROSILICATE
GLASS
RELATIVE INTENSITY (%)
TRANSMITTANCE (%)
SYNTHETIC
SILICA
STRIP CURRENT
VD
FIBER OPTIC PLATE (FOP)
The FOP is an optical plate comprising some millions to hundreds of
millions of glass fibers with several micrometer diameter, bundled
parallel to one another.
The FOP is capable of transmitting an optical image from one surface
to another without causing any image distortion.
■Structure of FOP
Optical fiber
TMCPC0002EC
PHOSPHOR SCREEN
The phosphor screen generally absorbs ultraviolet radiation, electron
beams or X-rays and emits light on a wavelength characteristic of that
material. An image intensifier uses a phosphor screen at the output
surface to convert the electrons multiplied by the MCP into light.
Phosphor screen decay time is one of the most important factors to
consider when selecting a phosphor screen type. When used with a
high-speed CCD or linear image sensor, a phosphor screen with a
short decay time is recommended so that no afterimage remains in the
next frame. For nighttime viewing and surveillance, a phosphor with a
Light
An FOP is made up of a bundle of 50 million
optical fibers.
Light
Reflection
Light
Several micrometer
diameter
Light is transmitted from one end to
the other while reflecting from the
surfaces repeatedly.
Light
Each individual optical fiber transmits light
and this light can be received as an
image.
TMCPC0079EA
6
●SELECTION GUIDE (by wavelength)
THIRD GENERATION
Wavelength A
of Peak
Response
(nm)
Spectral
Response
Range
(nm)
Type No.
V7090
-71
V9569
-71
V8070
-73
600 to 700
V8070
-74
480 to 530
-74
V8071
-76
Borosilicate Glass
GaAs
Borosilicate Glass
Extended Red
GaAsP
13.5 × 10
16 × 16
13.5 × 10
280 to 720
V9501
Effective
Photocathode
Area
(mm)
16 × 16
280 to 820
-73
Photocathode
13.5 × 10
370 to 920
V9501
Input Window C
480 to 530
Borosilicate Glass
GaAsP
16 × 16
360 to 1100
700 to 800
Borosilicate Glass
InGaAs
13.5 × 10
370 to 920
600 to 700
Borosilicate Glass
GaAs
17.5
V6833P
V6833P-G
V7090P
Number of MCP
1 stage MCP
2 stage MCP
1 stage MCP
2 stage MCP
1 stage MCP
2 stage MCP
1 stage MCP
2 stage MCP
1 stage MCP
2 stage MCP
1 stage MCP
2 stage MCP
1 stage MCP
2 stage MCP
1 stage MCP
1 stage MCP
1 stage MCP
SECOND GENERATION
Spectral
Response
Range
Wavelength B
of Peak
Response
(nm)
(nm)
—
160 to 900
-01
Input Window
Photocathode
430
Synthetic Silica
Multialkali
160 to 950
630
Synthetic Silica
Extended Red
Multialkali
-02
160 to 650
400
Synthetic Silica
Bialkali
-03
160 to 320
230
Synthetic Silica
Cs-Te
Suffix
18 mm
Effective Photocathode Area
non
Gate Function D
High Resolution
—
NOTE
1 stage MCP
V6886U
—
2 stage MCP
—
V4170U
1 stage MCP
2 stage MCP
1 stage MCP
*
*
2 stage MCP
1 stage MCP
*
*
2 stage MCP
1 stage MCP
*
*
2 stage MCP
...Standard product
*: Manufactured upon receiving your order
NOTE: A This value is for quantum efficiency.
B This value is for radiant sensitivity.
C Feel free to contact our sales office for availability of FOP or MgF2 input window.
D Minimum gate time
TYPE NO. GUIDE
Hamamatsu second generation image intensifiers are classified by series type No. and suffix No. When you
consult with our sales office about a product or place an order, please carefully refer to the characteristics listed
in the spec table.
If you need custom devices (using a different window or phosphor screen material, low resistance MCP,
transparent conductive film (NESA), special case potting), please let us know about your special requests.
V
U–
Series Type No.
7
Suffix No.
TYPE NO. GUIDE
Gate Function D
Non Gate
5 ns Gate
V
A–
–C D EF
Type No.
A: Potting method
B: Gate operation
C: Number of MCPs
D: Phosphor screen
E: Output window
A (See dimensional drawing.)
Suffix
Potting Method
Input window is positioned inwards from the front edge of the case.
U
Input window protrudes from the front edge of the case. This
D
type is ideal when using a Peltier cooling to reduce noise.
B
Suffix
Gate Type
N
Non-Gate
G
Gatable (5 ns)
C
Suffix
1
2
Stage of MCP
1
2
Suffix
3
4
6
7
Phosphor Screen Material
P43
P24
P46
P47
Suffix
0
Output Window
Fiber Optic Plate
Fiber Optic Plate W/NESA
(with Transparent Conductive Coating)
Borosilicate Glass
D
(Standard type is P43.)
E
1
2
V6833P, V6833P-G and V7090P the wrap around type of power supply are also available.
*
* Auto gating function
18 mm
5 ns
High Resolution
—
25 mm
non
High Resolution
10 ns
High Resolution
—
—
Suffix
V6887U
—
V7669U
—
V7670U
—
—
V4183U
—
V10308U
—
V10309U
*
*
—
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
-01
-02
-03
8
●CHARACTERISTICS
THIRD GENERATION
Type No.
Effective Photocathode Area
Suffix
13.5 mm × 10 mm1 16 mm × 16 mm1
V7090U/D
—
-71
—
V9569U/D
-71
V8070U/D
—
-73
-74
—
Spectral Stage
Gate 3
Response of
Function
Range MCP
(nm)
Both types
1
370 to 920
2 are avairable
Both types
370 to 920 1
are avairable
1
280 to 820
Both types
2
1 are avairable
280 to 720
2
-73
280 to 820
1
-74
280 to 720
1
-76
360 to 1100
1
Non-Suffix 370 to 920
1
V9501U/D
—
V8071U/D
V6833P, V7090P 2
V6833P-G 2
Both types
are avairable
Both types
are avairable
4
Input Window 5
Standard Standard
Photocathode Phosphor Output Luminous
/Index of
Material
Screen Window Sensitivity
Refraction n
(µA/lm)
Borosilicate Glass
P43
GaAs
FOP
1500
/1.49 *1
Borosilicate Glass
GaAs
1100
P43
FOP
/1.49 *1
Borosilicate Glass Extended Red
800
P43
FOP
GaAsP
/1.49 *1
Borosilicate Glass
700
GaAsP
P43
FOP
/1.49 *1
Borosilicate Glass Extended Red
750
P43
FOP
GaAsP
/1.49 *1
Borosilicate Glass
650
GaAsP
P43
FOP
/1.49 *1
Borosilicate Glass
200
InGaAs
P43
FOP
/1.49 *1
Borosilicate Glass
1500
GaAs
P43
FOP
/1.49 *1
SECOND GENERATION
Type No.
Effective Photocathode Area
18 mm
25 mm
V6886U
V6887U
V4170U
V4183U
V6886U
V6887U
V4170U
V4183U
V6886U
V6887U
V4170U
V4183U
V6886U
V6887U
V4170U
V4183U
V7669U
V7670U
V10308U
V10309U
V7669U
V7670U
V10308U
V10309U
V7669U
V7670U
V10308U
V10309U
V7669U
V7670U
V10308U
V10309U
Spectral Stage
Input Window 5
Standard Standard
Gate 3
Photocathode Phosphor Output Luminous
Response of
/Index of
Function
Material
Range MCP
Screen Window Sensitivity
Refraction n
(nm)
(µA/lm)
280
1
Synthetic Silica
230
P43
FOP
Multialkali
Non-Suffix 160 to 900
2
/1.46 *
170
2
150
550
1
Synthetic Silica Extended red
360
P43
FOP
160 to 950
-01
/1.46 *2
360
Multialkali
2
250
50
1
Synthetic Silica
40
P43
FOP
Bialkali
160 to 650
-02
/1.46 *2
50
2
40
—
1
Synthetic Silica
—
P43
FOP
Cs-Te
160 to 320
-03
/1.51 *3
—
2
—
Suffix
Above characteristics are measured using a P43 phosphor screen.
NOTE: 1 Photocathode area other than effective area is not guaranteed.
2 Effective Photocathode Area: 17.5 mm
3 : available, : not available
4 Auto gating function
5 Wavelength used measure refractive index: *1: 588 nm, *2: 589.6 nm, *3: 254 nm
6 Typical values measured at the wavelength of peak response (-76 at 1 µm)
7 Typical values measured at 20 °C
9
(These specifications shown in this table are typical value.)
Wavelength of Peak Response
Radiant
Sensitivity
(mA/W)
(nm)
170
700 to 800
147
700 to 800
530 to 580
480 to 530
214
50
171
40
530 to 580
2.5 × 104
5.7 × 106
2.2 × 104
5.0 × 106
1.3 × 104
3.0 × 106
1.4 × 104
3.4 × 106
2.3 × 104
1.2 × 104
57
2.0 × 104
1.3 × 104
57
3 v 10-12 8 × 10-15
64
57
64
57
8
750 to 850
1
700 to 800
7.0 × 103
4.6 × 102
3 × 10-10 9 × 10-12
64
170
700 to 800
30
600 to 700
4.0 × 104
1.2 × 104
2 × 10-11 4 × 10-14
64
Wavelength of Peak Response
Radiant
Sensitivity
(mA/W)
62
53
60
47
45
42
43
40
50
40
50
40
20
15
20
15
(nm)
430
630
400
230
-20 to +40 300 m/s2
10 Hz to 55 Hz
(30G),
0.7 mm (p-p)
-55 to +60 18 ms
480 to 530
45
192
Operation
Equivalent
Background
Input (EBI) 7
Limiting Storage Maximum Maximum
Radiant
Quantum
Luminous Emittance
Resolution
Ambient Shock Vibration
Efficiency (QE)
Gain
Gain 6
Temperature
(%)
[(lm/m2)/lx] [(W/m2)/(W/m2)] (lm/cm2) (W/cm2) 6 (Lp/mm)
(nm)
(°C)
4.0 × 104
1.2 × 104
64
30
600 to 700
57
9.6 × 106
2.7 × 106
2 × 10-11 4 × 10-14
22
600 to 700 3.3 × 104
57
9.0 × 103
45
192
Gain
Quantum
Efficiency (QE)
(%)
18
15
17
14
9.3
8.7
8.9
8.3
14
12
14
12
11
8
11
8
(nm)
410
600
380
220
Gain
Equivalent
Background
Input (EBI) 7
Operation
Limiting Storage Maximum Maximum
Radiant
Luminous Emittance
Resolution Ambient Shock Vibration
Gain
Gain 6
Temperature
[(lm/m2)/lx] [(W/m2)/(W/m2)] (lm/cm2) (W/cm2) 6 (Lp/mm)
(°C)
1.2 × 104
8.7 × 103
64
1.1 × 104
6.8 × 103
-11 3 × 10-14
1
×
10
5 × 106
4 × 106
57
6
4 × 10
3 × 106
2.5 × 104
6.2 × 103
64
2.1 × 104
5.3 × 103
-11 2 × 10-14
3
×
10
1 × 107
3 × 106
-20 to +40 300 m/s2
57
6
10 Hz to 55 Hz
8 × 10
2 × 106
(30G),
0.7 mm (p-p)
3.1 × 103
7 × 103
-55 to +60 18 ms
50
2.5 × 103
5.9 × 103
5 × 10-13 5 × 10-16
1 × 106
4 × 106
45
1 × 106
3 × 106
—
2.6 × 103
40
—
2 × 103
-15
—
1
×
10
—
1 × 106
28
—
7.5 × 105
10
●CHARACTERISTIC GRAPHS
Figure 7: MTF
Third Generation
Second Generation
100
TII B0100EC
100
90
TII B0077ED
90
1 STAGE MCP
80
80
70
70
60
60
MTF (%)
MTF (%)
1 STAGE MCP
50
2 STAGES MCP
40
40
30
30
20
20
10
10
0
0
10
20
30
40
50
60
2 STAGES MCP
50
0
70
0
SPATIAL RESOLUTION (Lp/mm)
10-9
2 STAGES MCP
50
60
70
ENHANCED RED
MULTIALKALI
10-11
GaAs
105
EBI (lm/m2)
LUMINOUS GAIN (lm/m2/lx)
106
1 STAGE MCP
104
10-12
MULTIALKALI
10-13
GaAsP
10-14
102
500
1000
1500
10-15
-30
2000
-20
MCP VOLTAGE (V)
TII B0075ED
100
×1
07
102
GA
IN
=1
×1
100
04
GA
IN
=1
101
10-1
10-2
10-3
10-4
10-5 -9
10
10-8
10-7
10-6
10-5
10-4
0
+10
+20
+30
+40
Figure 11: Shutter Ratio (color temperature: 2856 k)
RELATIVE PHOSPHOR SCREEN INTENSITY
103
-10
TEMPERATURE (°C)
Figure 10: Photocathode Illuminance
vs. Phosphor Screen Luminous Emittance
PHOSPHORE SCREEN LUMINOUS EMITTANCE (lm/m2)
40
TII B0101ED
10-10
103
10-3
10-2
PHOTOCATHODE ILLUMINANCE (lx)
11
30
Figure 9: Equivalent Background Input (EBI) vs. Temperature
TII B0076ED
107
20
SPATIAL RESOLUTION (Lp/mm)
Figure 8: Luminous Gain vs. MCP Voltage (V8070 Series)
108
10
10-1
TII B0045EB
10-1
10-2
MCP-IN – MCP-OUT
= 900 V dc
MCP-OUT – PHOSPHOR
SCREEN = 6000 V dc
10-3
10-4
10-5
10-6
10-7
1.3 × 109
SHUTTER RATIO
10-8
10-9
10-10
-200
-100
0
+100
PHOTOCATHODE POTENTIAL TO MCP-IN (V)
●WIRING DIAGRAM
Recommended Operation (Example)
Normal Operation
Figure 12: Normal Operation
PHOSPHOR
SCREEN
VK
V MCP
(BLUE)
(BLACK)
(VIOLET)
NOTE: 1 The maximum supply voltage and recommended supply voltage
for the MCP-in and MCP-out are noted on the test data sheet
when the products is delivered. Please refer to the test data
sheet for these values.
MCP (1 TO 2 STAGE)
PHOTOCATHODE
(GREEN)
Supply Voltage (See Figure 12.)
Photocathode – MCP-in (Vk) ...............................150 V to 200 V
MCP-in – MCP-out (VMCP)1 ....1 Stage MCP
500 V to 1000 V
2 Stages MCP 1000 V to 2000 V
MCP-out – Phosphor Screen (Vs) ...................5000 V to 6000 V
VS
1 Stage MCP 500 V to 1000 V 1 5000 V to 6000 V
2 Stages MCP 1000 V to 2000 V 1
150 V to 200 V
TII C0017EF
NOTE: A compact high-voltage power supply is available. (See page 15.)
Any electrode (for photocathode, MCP and phosphor screen) can
be connected to ground potential.
Gate Operation
There are two basic circuits for gate operation as shown in Figure 13 below. The supply voltages VMCP and Vs are the same as
those in normal operation. Gate operation is controlled by changing the bias voltage (VB) between the photocathode and MCP-in.
Figure 13: Gate Operation
Normally-OFF mode
The VB is constantly applied as a reverse bias to the
photocathode, so no image appears on the phosphor screen.
An image appears only when a gate pulse (VG) is applied to
the photocathode.
PHOTOELECTRONS
MCP
PHOTOCATHODE
0
GATE ON
PULSE
Normally-ON mode
The VB is constantly applied as a forward bias to the
photocathode, so an image is always seen on the phosphor
screen during operation. The image disappears only when a
gate pulse (VG) is applied to the photocathode.
PHOTOELECTRON
PHOSPHOR
SCREEN
PHOSPHOR
SCREEN
MCP
PHOTOCATHODE
GATE OFF
PULSE
LIGHT
LIGHT
VG
VG
0
C
C
PULSE
GENERATOR
R
PULSE
GENERATOR
VB
VMCP
R
VS
EXAMPLE VB=+30 V
VG=-230 V
EXAMPLE VB=-200 V
VG=+230 V
TII C0018EC
VB
V MCP
VS
TII C0019EF
C, R: Chose the value in consideration of pulse width and repetition rate.
C: High voltage type.
Clamping method for using a vacuum chamber
with MgF2 window type
IMAGE INTENSIFIER
O-RING
INPUT WINDOW
(MgF2)
18 mm or
25 mm
OUTPUT WINDOW
VACUUM
CHAMBER
VACUUM FLANGE
TII C0062ED
12
●DIMENSIONAL OUTLINES
(Unit: mm)
V7090U/D series, V8070U/D series, V8071U/D series (Effective photocathode area: 13.5 mm × 10 mm)
V7090U, V8070U, V8071U series
PHOSPHOR
SCREEN
BLACK
VIOLET
GREEN
GRAY*
BLUE
PHOTOCATHODE
10
OUTPUT
WINDOW *
INTPUT
WINDOW
A
5.5 ± 0.1
13.5
0.5 ± 0.2
14.64 ± 0.1
13.5
LEAD LENGTH 200 MIN.
23.0 ± 0.3
INPUT VIEW
EFFECTIVE
PHOSPHOR
SCREEN
AREA
21.8
19
10
7 7
+0
45.0 –0.3
EFFECTIVE
PHOTOCATHODE
AREA
OUTPUT VIEW
MCP
A
1 stage
1.8 ± 0.6
2 stages
1.3 ± 0.6
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0043EE
V7090D, V8070D, V8071D series
INTPUT
WINDOW
10
13.5
0.5 ± 0.2
14.64 ± 0.1
LEAD LENGTH 200 MIN.
A
MCP
A
1 stage
21.2 ± 0.5
2 stages 21.7 ± 0.5
OUTPUT
WINDOW *
0.7 ± 0.6
5.5 ± 0.1
INPUT VIEW
EFFECTIVE
PHOSPHOR
SCREEN
AREA
21.8
31.1
+0
7 7
10
13.5
PHOSPHOR
SCREEN
BLACK
VIOLET
GREEN
GRAY*
BLUE
PHOTOCATHODE
45.0 –0.3
EFFECTIVE
PHOTOCATHODE
AREA
OUTPUT VIEW
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0053EG
V6886U, V6887U, V4170U, V4183U series
Suffix: Non,-01,-02,-03
21.8
19
M
IN
.
45.0 –0.3
+0
OUTPUT
WINDOW *
0.5 ± 0.2
INTPUT
WINDOW
A
5.5 ± 0.1
EFFECTIVE
PHOSPHOR
SCREEN
AREA
18
PHOSPHOR
SCREEN
BLACK
VIOLET
GREEN
GRAY*
BLUE
PHOTOCATHODE
7 7
18
M
IN
.
EFFECTIVE
PHOTOCATHODE
AREA
LEADLENGTH
200 MIN.
14.64 ± 0.1
23.0 ± 0.3
INPUT VIEW
OUTPUT VIEW
TYPE No.
A
V6886U, V6887U
1.7 ± 0.6
V4170U, V4183U
1.3 ± 0.7
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)* *ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0033EF
Input window: FOP type and MgF2 type
OUTPUT
WINDOW *
0.5 ± 0.2
B
5.5 ± 0.1
M
IN
.
21.8
31.1
+0
45.0 –0.3
INPUT
WINDOW
EFFECTIVE
PHOSPHOR
SCREEN
AREA
18
PHOSPHOR
SCREEN
BLACK
VIOLET
GREEN
GRAY*
BLUE
PHOTOCATHODE
7 7
18
M
IN
.
EFFECTIVE
PHOTOCATHODE
AREA
LEADLENGTH
200 MIN.
14.64 ± 0.1
INPUT VIEW
A
OUTPUT VIEW
TYPE No.
A
B
V6886U, V6887U
21.3 ± 0.5
0.8 ± 0.6
V4170U, V4183U
21.7 ± 0.6
0.7 ± 0.7
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)* *ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0034EG
13
V7669U, V7670U, V10308U, V10309U series
Suffix: Non,-01,-02,-03
EFFECTIVE
PHOTOCATHODE
AREA
PHOSPHOR SCREEN
OUTPUT
WINDOW
WHITE*
.
M
25
BLUE
BLACK
VIOLET
B
A
TYPE No.
A
B
V7669U, V7670U
5.94 ± 0.1
2.2 ± 0.6
V10308U, V10309U 5.53 ± 0.1
2.1 ± 0.7
IN
28.5
26
25
M
IN
.
53.0 +0
-0.3
PHOTOCATHODE
INPUT WINDOW
EFFECTIVE
PHOSPHOR
SCREEN
AREA
0.5 ± 0.2 GREEN
11.7 ± 0.1
21.0 ± 0.3
INPUT VIEW
LEAD LENGTH
200MIN.
OUTPUT VIEW
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
WHITE (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0018ED
Input window: FOP type and MgF2 type
EFFECTIVE
PHOTOCATHODE
AREA
PHOSPHOR SCREEN GREEN
VIOLET
INPUT
B
BLACK
WINDOW
EFFECTIVE
PHOSPHOR
SCREEN
AREA
WHITE*
BLUE
0.5 ± 0.2
11.7 ± 0.1
PHOTOCATHODE
C
TYPE No.
A
B
C
V7669U, V7670U
18.8 ± 0.5
5.94 ± 0.1
0.8 ± 0.6
V10308U, V10309U 18.9 ± 0.6
5.53 ± 0.1
0.9 ± 0.7
.
25
M
IN
28.5
44
25
M
IN
.
53.0 +0
-0.3
OUTPUT
WINDOW
A
INPUT VIEW
LEAD LENGTH
200MIN.
OUTPUT VIEW
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0046EC
V9501U/D series, V9569U/D series (Effective photocathode area: 16 mm × 16 mm)
V9501U, V9569U series
PHOSPHOR SCREEN
GREEN
VIOLET
BLACK
BLUE
WHITE*
5.94 ± 0.1
28.5
26
16
+0
53 - 0.3
PHOTOCATHODE
EFFECTIVE
PHOSPHOR SCREEN
AREA
16
EFFECTIVE
PHOTOCATHODE
AREA
MCP
A
1 stage
2.2 ± 0.6
2 stage
1.9 ± 0.6
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
WHITE (NESA/GND)*
OUTPUT
WINDOW
INPUT WINDOW
16
0.5 ± 0.2
A
11.7 ± 0.1
INPUT VIEW
LEAD LENGTH
200 MIN.
* ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
16
CASE MATERIAL: POM (POLY OXY METHYIENE)
OUTPUT VIEW
21.0 ± 0.3
TII A0063EB
V9501D, V9569D series
PHOSPHOR SCREEN
5.94 ± 0.1
EFFECTIVE
PHOSPHOR SCREEN
AREA
16
44
+0
16
GREEN
VIOLET
BLACK
BLUE
WHITE*
28.5
PHOTOCATHODE
53 - 0.3
EFFECTIVE
PHOTOCATHODE
AREA
OUTPUT
WINDOW
16
INPUT WINDOW
0.5 ± 0.2
A
11.7 ± 0.1
INPUT VIEW
LEAD LENGTH
200 MIN.
MCP
A
B
1 stage
0.8 ± 0.6
18.8 ± 0.5
2 stage
0.6 ± 0.6
19.1 ± 0.5
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
WHITE (NESA/GND)*
* ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
16
CASE MATERIAL: POM (POLY OXY METHYIENE)
OUTPUT VIEW
B
TII A0064EB
14
●DIMENSIONAL OUTLINES
(Unit: mm)
V6833P, V6833P-G (Built-in power supply)
31.0 ± 0.2
18.6
26
+0
36.8 - 0.2
2.5
R40
1.5
INPUT WINDOW
(BOROSILICATE GLASS)
18.6
19.0 ± 0.1
4±1
INPUT VOLTAGE
(+2 V to +3 V)
0.35
EFFECTIVE
PHOSPHOR SCREEN AREA
17.5 MIN.
4.9
5
1.0 ± 0.1
60 °
5.5 ± 0.1
EFFECTIVE
PHOTOCATHODE AREA
17.5 MIN.
OUTPUT WINDOW
(INVERTING CONCAVE
FIBER OPTIC PLATE)
9.5
CASE MATERIAL: POM (POLYOXYMETHYILENE)
GND
PHOTOCATHODE (GaAs)
INPUT VIEW
OUTPUT VIEW
TII A0031EE
V7090P (Built-in power supply)
EFFECTIVE
PHOTOCATHODE AREA
17.5 MIN.
8
0.
R
1.6 ± 0.15
INPUT
WINDOW
31.3 ± 0.6
PHOTOCATHODE
EFFECTIVE PHOSPHOR
SCREEN AREA
17.5 MIN.
4.8 ± 0.15
INPUT VOLTAGE (+2 V to +3 V)
GND
+0.13
± 0.1
14.20 ± 0.15
0.63 ± 0.10
R18
+
23 - 0
+0.2
21.6 - 0
43.1 - 0.75
+0.08
–
OUTPUT WINDOW
(STRAIGHT CONCAVE
FIBER OPTIC PLATE)
CASE MATERIAL: POM (POLYOXYMETHYILENE)
5.5 ± 0.1
INPUT VIEW
15
19.73 ± 0.30
3.25 ± 0.15
OUTPUT VIEW
TII A0048EE
●HANDLING PRECAUTIONS AND WARRANTY
HANDLING PRECAUTIONS
●Do not apply excessive shocks or vibrations during transportation, installation, storage or
operation. Image intensifiers are an image tube evacuated to a high degree of vacuum. Excessive
shocks or vibrations may cause failures or malfunctions. For reshipping or storage, use the
original package received from Hamamatsu.
●Never touch the input or output window with bare hands during installation or operation. The
window may become greasy or electrical shocks or failures may result.
Do not allow any object to make contact with the input or output window. The window might
become scratched.
●Dust or dirt on the input or output window will appear as black blemishes or smudges. To remove
dust or dirt, use a soft cloth to wipe the windows thoroughly before operation. If fingerprints or
marks adhere to the windows, use a soft cloth moistened with alcohol to wipe off the windows.
Never attempt cleaning any part of image intensifiers while it is in operation.
●Never attempt to modify or to machine any part of image intensifiers or power supplies.
●Do not store or use in harsh environments. If image intensifiers is left in a high-temperature, salt or
acidic atmosphere for a long time, the metallic parts may corrode causing contact failure or a
deterioration in the vacuum level.
●Image intensifiers are extremely sensitive optical devices. When applying the MCP voltage without
using an excessive light protective circuit, always increase it gradually while viewing the emission
state on the phosphor screen until an optimum level is reached.
●Do not expose the photocathode to strong light such as sunlight regardless of whether in
operation or storage.
Operating the image intensifiers while a bright light (e.g. room illumination) is striking the
photocathode, might seriously damage the photocathode.
The total amount of photocurrent charge that flows in the photocathode while light is incident
during operation has an inverse proportional effect on photocathode life. This means that the
amount of incident light should be kept as small as possible.
●Never apply the voltage to image intensifiers exceeds the maximum rating. Especially if using a
power supply made by another company, check before making connections to the image
intensifier, that the voltage appling to each electrode is correct.
If a voltage in excess of the maximum rating is applied even momentarily, the image intensifier
might fail and serious damage might occur.
●Use only the specified instructions when connecting an image intensifier to a high-voltage power
supply module.
If the connections are incorrect, image intensifiers might be instantly damaged after the power is
turned on. Use high-voltage connectors or solder having a high breakdown voltage. When
soldering, provide sufficient insulation at the solder joint by using electrical insulation tape capable
of withstanding at least 10 kV or silicon rubber that hardens at room-temperature and withstands
at least 20 kV/mm.
WARRANTY
Hamamatsu image intensifiers are warranted for one year from the date of delivery or 1000 hours of
actual operation, whichever comes first. This warranty is limited to repair or replacement of the
product. The warranty shall not apply to failure or defects caused by natural disasters, misused or
incorrect usage that exceeds the maximum allowable ratings.
When ordering, please double-check all detailed information.
16
●SEPARATE POWER SUPPLIES
Hamamatsu offers various types of separate modular power supplies designed to provide the high voltages needed for image intensifier
operation. These power supplies are compact, lightweight and operate on a low voltage input. Image intensifier gain is easily controlled by
adjusting the control voltage for the MCP voltage or the control resistance. Please select the desired product that matches your application.
FOR DC OPERATION
Input
Output
MCP
MCP-Out–
1
Max. Control Photocathode– MCP-In–
Type No. Voltage CurMCP-In
MCP-Out
Phosphor Screen Ground
Voltage
Max.
rent
Voltage
Voltage Current Voltage Max. Current
(V) (mA)
(V)
(µA) (V)
(µA)
(V)
(V)
Features
Applicable I.I.
1
C6706-010 +15±1.5
60
1
2
ABC (Automatic Brightness Control)
0.25 to 0.75
20
C6706-210 +12±1.2
500 to 1000
+5 to +10
Excess current (excess light)
protective function
0.1 to 1
6000
-200
MCP-in
2
ABC (Automatic Brightness Control)
C8499-020
+10±0.5 150
1000 to 2000 100
0.05 to 5
Excess current (excess light)
protective function
C8499-220
V6886U, V7669U
V7090⁄-7⁄-N1⁄⁄
V8070⁄-7⁄-N1⁄⁄
V8071⁄-7⁄-N1⁄⁄
V4170U, V10308U
V7090⁄-7⁄-N2⁄⁄
V8070⁄-7⁄-N2⁄⁄
FOR GATE OPERATION (100 ns to DC operation at maximum repetition rate of 1 kHz)
Input
MCP Voltage Gate Signal Input Level
Type No. Voltage Current Control
Voltage
(V)
(mA Max.)
(V)
Gate On
Voltage
Gate Off
Voltage
(V)
(V)
Photocathode–
MCP-In
Voltage
(V)
Output
MCP-In–
MCP-Out–
1
MCP-Out Phosphor Screen Ground Features
Max.
Voltage Max. Current
Voltage Current
(µA)
(µA)
(V)
(V)
V6887U, V7670U
V7090⁄-7⁄-G1⁄⁄
V8070⁄-7⁄-G1⁄⁄
V8070⁄-7⁄-G1⁄⁄
1
500 to 1000
C6083-010
+10±0.5
200
+5 to +10
0
+5
(TTL Low) (TTL High)
-200
50
ABC 2
6000 0.05 to 5 MCP-in
V4183U, V10309U
V7090⁄-7⁄-G2⁄⁄
V8070⁄-7⁄-G2⁄⁄
1000 to 2000
C6083-020
Applicable I.I.
NOTE: 1Other ground terminal types and other input voltage types are also available. Please consult our sales office.
2ABC: Automatic Brightness Control
■Dimensional Outlines (Unit: mm)
C6706-010, -210
C6083-010, -020
ABC ADJUSTMENT or EXCESS CURRENT
PROTECTIVE LEVEL ADJUSTMENT
E5
E6
E7
E8
VOLTAGE ADJUSTMENT FOR PHOSPHOR SCREEN
INPUT LEAD LINES
E1
E2
E3
E4
FEP
+15 V or +12 V IN (RED)
GND (BLACK)
CONTROL (WHITE)
S: PHOSPHOR SCREEN (YELLOW)
CASE: BLACK EPOXY
CASE: BLACK EPOXY
FEP
19.05
OUTPUT LEAD LINES
12.7
44.45
MO: MCP-out (BROWN)
MI: MCP-in (RED)
K: PHOTOCATHODE (BLUE)
6.35
4-M2.5
6.35
6.35
76.2
101.6
200 MIN.
3.81
38.1
E1: PHOTOCATHODE
E2: MCP-in
E3: MCP-out
E4: PHOSPHOR SCREEN
E5: INPUT VOLTAGE
E6: GND
E7: CONTROL VOLTAGE
E8: GATE IN SIGNAL
50.8
4-3.05
4-No4-40 UNC THICK5.1
6.35
TII A0051EA
50.8
31.75
37.8
38.1
51.3
E5
E6
E7
E8
E1
E2
E3
E4
CASE: BLACK EPOXY
12.7
C8499-020, -220
4-3.05
4-No4-40 UNC DEPTH5.1
6.35
6.35
76.2
101.6
6.35
200 MIN.
3.81
E1: PHOTOCATHODE
E2: MCP-in
(GND)
E3: MCP-out
E4: PHOSPHOR
SCREEN
E5: INPUT
VOLTAGE
E6: GND
E7: CONTROL
VOLTAGE
E8: NC
TII A0052EB
TII A0070EB
●HOUSING CASE A10505
A10505 is a Housing case for easy to use 45mm outer diameter of Image Intensifier (output window: FOP, MCP: 1stage).
It is available for 1 stage MCP type of V7090U/D, V8070U/D, V8071U/D, V6886U and V6887U series.
Input: C-mount, Output: Hamamatsu's relay lens mount. Screw hole for a tripod can be used for holding.
■Dimensional Outlines (Unit: mm)
30
32.5
17
40
M59X1
ORIGINAL RELAY LENS MOUNT
C-MOUNT
DEPTH 8
65
1/4"-20UNC
DEPTH 10
24.8 ± 1.0
22.9
58.7 ± 1.0
INPUT VIEW
OUTPUT VIEW
MATERIAL: ALUMINIUM
WEIGHT : 250 g
TII A0069EA
17
●RELATED PRODUCTS
HIGH-SPEED GATED IMAGE INTENSIFIER UNITS
High-speed gated Image Intensifier (I.I.) unit comprises proximity focused I.I., high voltage
power supply and gate driver circuit. Depending on application, a best gated I.I. unit can be
selected from among various models.
The built-in I.I. is available with GaAsP photocathode, multialkali photocathode or GaAs
photocathode The GaAsP photocathode type delivers very high quantum efficiency in
visible region ideal for bio-/fluorescence imaging application under a microscope. The
multialkali photocathode type offers a wide spectral range from UV (Ultra Violet) to NIR
(Near Infrared Region). The GaAs photocathode type has high sensitivity from visible
region to NIR.
All of gated I.I. units can be operated and controlled from a remote controller or a PC (Personal Computer) via the USB interface. HAMAMTSU also provides suitable relay lenses or
CCD camera with FOP window for C9016/C9546 series.
SELECTION GUIDE
Type No.
Effective Area
Gate Time
Gate Repetition Rate
Spectral Response
Photocathode Material
Peek QE 3
C9016
-01, -02
C9016
-03, -04
C9016
-05, -06
C9546
-01, -02
C9546
-03, -04
C9546
-05, -06
C9547
-01, -02
C9547
-03, -04
C9547
-05, -06
Unit
25 2
17 1
17 1
5 ns
5 ns
10 µs
3 ns
10 ns
200 Hz
30 kHz
30 kHz
280 to 720 185 to 900 370 to 920 280 to 720 185 to 900 370 to 920 280 to 720 185 to 900 370 to 920
GaAsP Multialkali
GaAsP Multialkali
GaAsP Multialkali
GaAs
GaAs
GaAs
50
30
50
30
45
22
17
14
14
mm
—
—
nm
—
%
NOTE: 1Effective output area is 12.8 mm × 9.6 mm. Take the effective area of the camera and reduction rate of the relay lens to be used into account.
2Effective output area is 16 mm × 16 mm. Take the effective area of the camera and reduction rate of the relay lens to be used into account.
3Typical at peak wavelength.
ICCD CAMERA
WITH HIGH-SPEED ELECTRONIC SHUTTER C10054 SERIES
The C10054 series is an easy to use compact camera housing an image intensifier fibercoupled to a CCD, as well as a CCD drive circuit, high-voltage power supply and highspeed gate circuit. The C10054 series makes it easy to measure low-light-levels and
capture images of various high-speed phenomena.
A wide lineup of 18 models are currently provided allowing you to select multialkali, GaAs
or GaAsP photocathodes and the number of MCPs.
SELECTION GUIDE
TV Format
EIA
C10054-01
C10054-02
C10054-03
C10054-04
C10054-05
C10054-06
Type No.
TV Format
CCIR
C10054-11
C10054-12
C10054-13
C10054-14
C10054-15
C10054-16
Photocathode
Photocathode
Non TV Format
Material
Progressive Scan
C10054-21
Borosilicate glass
GaAsP
C10054-22
C10054-23
Synthetic silica
Multialkali
C10054-24
C10054-25
Borosilicate glass
GaAs
C10054-26
Spectral
Response
(nm)
280 to 720
185 to 900
370 to 920
Stage
Limiting
of
Resolution
MCP
(TV line)
1
2
1
2
1
2
470
450
480
420
470
450
18
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan
Telephone: (81)539/62-5248, Fax: (81)539/62-2205
www.hamamatsu.com
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Sales Offices
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Japan:
HAMAMATSU PHOTONICS K.K.
325-6, Sunayama-cho, Naka-ku,
Hamamatsu City, Shizuoka Pref. 430-8587, Japan
Telephone: (81)53-452-2141, Fax: (81)53-456-7889
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HAMAMATSU PHOTONICS (CHINA) Co., Ltd.
Main Office
1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu,
Chaoyang District, 100020 Beijing, China
Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866
E-mail: [email protected]
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4905 Wheelock Square, 1717 Nanjing Road West,
Jingan District, 200040 Shanghai, China
Telephone: (86)21-6089-7018, Fax: (86)21-6089-7017
Taiwan:
HAMAMATSU PHOTONICS TAIWAN Co., Ltd.
Main Office
8F-3, No.158, Section2, Gongdao 5th Road,
East District, Hsinchu, 300, Taiwan R.O.C.
Telephone: (886)03-659-0080, Fax: (886)07-811-7238
E-mail: [email protected]
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No.6, Central 6th Road, K.E.P.Z. Kaohsiung 806,
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Telephone: (886)07-262-0736, Fax: (886)07-811-7238
U.S.A.:
HAMAMATSU CORPORATION
Main Office
360 Foothill Road, Bridgewater, NJ 08807, U.S.A.
Telephone: (1)908-231-0960, Fax: (1)908-231-1218
E-mail: [email protected]
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2875 Moorpark Ave. San Jose, CA 95128, U.S.A.
Telephone: (1)408-261-2022, Fax: (1)408-261-2522
E-mail: [email protected]
Chicago Office
4711 Golf Road, Suite 805, Skokie, IL 60076, U.S.A.
Telephone: (1)847-825-6046, Fax: (1)847-825-2189
E-mail: [email protected]
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20 Park Plaza, Suite 312, Boston, MA 02116, U.S.A.
Telephone: (1)617-536-9900, Fax: (1)617-536-9901
E-mail: [email protected]
REVISED MAR. 2016
Information in this catalog is
believed to be reliable. However,
no responsibility is assumed for
possible inaccuracies or omission.
Specifications are subject to
change without notice. No patent
rights are granted to any of the
circuits described herein.
© 2016 Hamamatsu Photonics K.K.
United Kingdom:
HAMAMATSU PHOTONICS UK Limited
Main Office
2 Howard Court, 10 Tewin Road, Welwyn Garden City,
Hertfordshire AL7 1BW, UK
Telephone: (44)1707-294888, Fax: (44)1707-325777
E-mail: [email protected]
South Africa Office:
PO Box 1112, Buccleuch 2066, Johannesburg, South Africa
Telephone/Fax: (27)11-802-5505
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Dornacherplatz 7 4500 Solothurn, Switzerland
Telephone: (41)32-625-60-60, Fax: (41)32-625-60-61
E-mail: [email protected]
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Telephone: (32)10 45 63 34, Fax: (32)10 45 63 67
E-mail: [email protected]
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C. Argenters, 4 edif 2 Parque Tecnológico del Vallés
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Telephone: (34)93 582 44 30, Fax: (34)93 582 44 31
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Main Office
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Telephone: (49)8152-375-0, Fax: (49)8152-265-8
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Telephone: (31)36-5405384, Fax: (31)36-5244948
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Telephone: (48)22-646-0016, Fax: (48)22-646-0018
E-mail: [email protected]
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Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01
E-mail: [email protected]
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Telephone: (7)495 258 85 18, Fax: (7)495 258 85 19
E-mail: [email protected]
Italy:
HAMAMATSU PHOTONICS ITALIA S.r.l.
Main Office
Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy
Telephone: (39)02-935-81-733, Fax: (39)02-935-81-741
E-mail: [email protected]
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Telephone: (39)06-50513454, Fax: (39)02-935-81-741
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Main Office
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91882 Massy Cedex, France
Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
E-mail: [email protected]
Quality, technology and service are part of every product.
TII 0007E01
MAR. 2016 IP
(1500)