IMAGE INTENSIFIERS - Hamamatsu Photonics

IMAGE INTENSIFIERS
Image
Intensifier
Image intensifiers (often abbreviated as I. I.) were primarily developed for nighttime viewing and surveillance under
moonlight or starlight. Image intensifiers are capable of detecting and amplifying low-light-level images (weak emissions or
reflected light) for bringing them into view as sharp contrast images. Image intensifier applications have spread from
nighttime viewing to various fields including industrial product inspection and scientific research, especially when used
with CCD cameras (intensified CCD or ICCD). Gate operation models are also useful for observation and motion analysis of
high-speed phenomena (high-speed moving objects, fluorescence lifetime, bioluminescence and chemiluminescence
images). Some major image intensifier applications are introduced here.
APPLICATION EXAMPLE
BIOTECHNOLOGY
INDUSTRY
Fluorescence imaging
Observing engine combustion
Soot scattering images (taken by image intensifier)
Direct flame images (taken by high-speed shutter camera)
ATDC: After Top Dead Center, θ: Crank angle with respect to ATDC
How soot is generated can be observed by viewing low-level scattering
light resulting from laser irradiation.
Mitochondria inside a nerve system culture cell NG108-15, specificity labeled with fluorescent dye MITO TRACKER.
ELECTRONICS
ASTRONOMY
PDP (Plasma display panel) emission
Celestial body observation
0.47 µs
0.71 µs
1.09 µs
1.37 µs
Star wind from the protostar L1551-IRS5 (red star at upper left),
twinkling in yellowish green when it collides with surrounding gases.
Very-low plasma emission occurring over an ultra-short duration can be observed. (*Plasma emission is superimposed on the PDP electrode. Top left
shows elapsed time after applying a voltage to the each others electrode.
Photo courtesy of National Astronomical Observatory in Japan/In cooperation with NHK (Nihon Hoso Kyokai)
OTHER-APPLICATIONS
●Low-light-level imaging ●Multi-channel spectroscopy ●High-speed motion analysis
●Bioluminescence or chemiluminescence imaging ●UV range imaging (Corona discharge observation)
FEATURES
Feature
1 WIDE VARIATIONS
A wide variety of characteristics is presented including spectral response by choosing a photocathode and
window material combination, photocathode size, the number of MCPs (gain) and gate time. You are sure to
find the device that best matches your application from our complete lineup of standard or custom products.
■Spectral Response Characteristics
100
TII B00113EA
Photo Cathode
Suffix
GaAs
-71
Enhanced Red GaAsP
-73
GaAsP
-74
InGaAs
-76
Multialkali
Non
-01 Enhanced Red Multialkali
Bialkali
-02
Cs-Te
-03
-74
-73
QUANTUM EFFICIENCY: QE (%)
-71
10
-76
1
Input Window
Borosilicate Glass
Borosilicate Glass
Borosilicate Glass
Borosilicate Glass
Synthetic Silica
Synthetic Silica
Synthetic Silica
Synthetic Silica
The sensitivity at short wavelengths charges
with typical transmittance of window materials.
Please refer to figure 4 (P6).
0.1
-03
-02
-01
No suffix.
0.01
100
200
300
400
500
600
700
WAVELENGTH (nm)
1
800
900
1000
1100
NOTE: For Gen II, gate operation types may
have slightly lower sensitivity in the
ultraviolet region.
Feature
2 HIGH RESOLUTION
Clear, sharp images can be obtained with no chicken wire.
Feature
3 COMPACT AND LIGHTWEIGHT
Proximity-focused configuration is more compact and lightweight than inverter type.
Feature
4 NO DISTORTION
Images without distortion can be obtained even at periphery.
Feature
5 HIGH-SPEED GATE OPERATION
High-speed gated image intensifiers are available for imaging and motion analysis of high-speed phenomena.
Feature
6 HIGH SENSITIVITY GaAs AND GaAsP PHOTOCATHODE
Excellent image intensification with an even higher signal-to-noise ratio is achieved by combining our
filmless MCP fabrication technology with the high-sensitivity GaAs and GaAsP photocathode.
■STRUCTURE
In conventional image intensifiers having a crystalline photocathode, a thin film was deposited over the surface of the MCP
(microchannel plate) to prevent ion feedback. Our improved fabrication method successfully eliminates this thin film. This filmless
structure eliminates the loss of electrons passing through the MCP and therefore improves the signal-to-noise ratio more than 20 %
compared to filmed image intensifiers, and the life is longer.
●Filmless MCP Type
●Filmed MCP Type
MCP
INPUT WINDOW
THIN FILM IS USED TO PREVENT ION FEEDBACK
(ELECTRON TRANSMITTANCE: 70 % to 80 %)
PHOSPHOR SCREEN
OUTPUT WINDOW
INCIDENT
LIGHT
p
p
p
p
p
p
p
p
p
p
p
p
e
p
p
e
e
e
p
p
p
e
e
Vk = 200 V
SN Ratio
20 % UP
OUTPUT
LIGHT
ELECTRON
Vk
Vmcp
High Resolution
64 Lp/mm (Typ.)
Vs
Vk
: CATHODE VOLTAGE
Vmcp : MCP VOLTAGE
: PHOSPHOR SCREEN
Vs
VOLTAGE
INCIDENT
LIGHT
p
p
p
p
p
p
p
p
p
p
p
p
Vk = 800 V
ELECTRON
OUTPUT
LIGHT
e
p
p
e
e
e
p
e
e
p
Vk
Vmcp
Vk
: CATHODE VOLTAGE
Vmcp : MCP VOLTAGE
: PHOSPHOR SCREEN
Vs
VOLTAGE
Vs
Cathode Voltage Long Life
200 V
■Low "halo" effect
Minimizes the halo effect that makes annular light appear around bright spots.
●Filmless MCP Type
●Filmed MCP Type
●System Configuration
LED
[GREEN]
LENS
I.I.
LENS
CCD Camera
halo
I.I. Output Window
2
●STRUCTURE AND OPERATION
STRUCTURE
Figure 1 shows the structure of a typical image intensifier. A photocathode
that converts light into photoelectrons, a microchannel plate (MCP) that
multiplies electrons, and a phosphor screen that reconverts electrons into
light are arranged in close proximity in an evacuated ceramic case. The
close proximity design from the photocathode to the phosphor screen
delivers an image with no geometric distortion even at the periphery.
Types of image intensifiers are often broadly classified by "generation".
The first generation refers to image intensifiers that do not use an MCP
and where the gain is usually no greater than 100 times. The second
generation image intensifiers use MCPs for electron multiplication. Types
using a single-stage MCP have a gain of about 10000, while types using
a 3-stage MCP offer a much higher gain of more than 10 million.
A variety of photocathodes materials are currently in use. Of these,
photocathodes made of semiconductor crystals such as GaAs and
GsAsP are called "third generation". These photocathodes offer extremely
high sensitivity. Among the first and second generation image intensifiers,
there are still some inverter types in which an image is internally inverted
by the electron lens, but these are rarely used now because of geometric
distortion.
by this potential difference towards the MCP and multiplied there. An
intensified image can then be obtained on the phosphor screen.
When the gate is OFF however, the photocathode has a higher potential
than the MCP-in (reverse-biased) so the electrons emitted from the
photocathode are forced to return to the photocathode by this reversebiased potential and do not reach the MCP. In the gate OFF mode, no
output image appears on the phosphor screen even if light is incident on
the photocathode.
To actually turn on the gate operation, a high-speed, negative polarity
pulse of about 200 volts is applied to the photocathode while the MCP-in
potential is fixed. The width (time) of this pulse will be the gate time.
The gate function is very effective when analyzing high-speed optical
phenomenon. Gated image intensifiers and ICCDs (intensified CCDs)
having this gate function are capable of capturing instantaneous images
of high-speed optical phenomenon while excluding extraneous signals.
Figure 3: Gate Operation Circuits
Gate ON at point (a)
ELECTRONS
PHOTOELECTRONS
PHOSPHOR
MCP
SCREEN
PHOTOCATHODE
GATE ON
–200 V
PULSE
LIGHT
0
Figure 1: Structure of Image Intensifier
(a)
(ELECTRON
MULTIPLICATION)
INPUT
WINDOW
LIGHT
VG
OUTPUT
WINDOW
(FIBER OPTIC
PLATE)
MCP
0V
VMCP ......MCP-in TO MCP-out VOLTAGE
VS ......MCP-out TO
PHOSPHOR SCREEN VOLTAGE
VB ......BIAS VOLTAGE
VG ......GATE PULSE
C
PULSE
GENERATOR
R
VB
VMCP
VS
ex.: VB = +30 V
VG = -230 V
TII C0047EA
Gate OFF at point (b)
PHOTOCATHODE
PHOTOELECTRONS
PHOTOCATHODE
MCP PHOSPHOR SCREEN
(LIGHT
PHOTOELECTRONS)
0
PHOSPHOR SCREEN
(ELECTRON
LIGHT)
PULSE
GENERATOR
Figure 2 shows how light focused on the photocathode is converted into
photoelectrons. The number of photoelectrons emitted at this point is
proportional to the input light intensity. These electrons are then
accelerated by a voltage applied between the photocathode and the MCP
input surface (MCP-in) and enter individual channels of the MCP. Since
each channel of the MCP serves as an independent electron multiplier,
the input electrons impinging on the channel wall produce secondary
electrons. This process is repeated several tens times by the potential
gradient across the both ends of the MCP and a large number of
electrons are in this way released from the output end of the MCP. The
electrons multiplied by the MCP are further accelerated by the voltage
between the MCP output surface (MCP-out) and the phosphor screen,
and strike the photocathode which emits light according to the amount of
electrons. Through this process, an input optical image is intensified about
10 000 times (in the case of a one-stage MCP) and appears as the output
image on the phosphor screen.
Figure 2: Operating Principle
MCP(ELECTRON MULTIPLICATION:
1000 to 10000 TIMES)
PHOSPHOR SCREEN
(ELECTRONS PHOTONS)
LOW-LEVEL
LIGHT IMAGE
INPUT WINDOW
INTENSIFIED
LIGHT IMAGE
VACUUM
ELECTRONS
OUTPUT WINDOW:
FIBER OPTIC PLATE
TII C0051ED
GATE OPERATION
An image intensifier can be gated to open or close the optical shutter by
varying the potential between the photocathode and the MCP-in. Figure
3 shows typical gate operation circuits.
When the gate is ON, the photocathode potential is lower than the MCPin potential so the electrons emitted from the photocathode are attracted
3
+30 V
LIGHT
0V
C
TII C0046EA
OPERATING PRINCIPLE
PHOTOCATHODE
(PHOTONS ELECTRONS)
(b)
R
VB
VMCP
VS
TII C0048EA
PHOTON COUNTING MODE
EM-CCD cameras and image intensifiers using a one-stage MCP have
been used in low-light-level imaging. However, these imaging devices
cannot capture a clear image when the light level is lower than 10-5 lx. At
such extremely low light levels, detecting light as an analog quantity is
difficult due to limitations by the laws of physics, but detecting light by
counting photons is more effective. Image intensifiers using a 3-stage
MCP are ideal for photon counting.
Image intensifiers with a 3-stage MCP can be considered high-sensitivity
image intensifiers. However, these have two operation modes, one of
which is completely different from normal image intensifier operation. At
light levels down to about 10-4 lx, these 3-stage MCP image intensifiers
operate in the same way as normal image intensifiers by applying a low
voltage to the MCP. A continuous output image can be obtained with a
gray scale or gradation. This operation mode allows the 3-stage MCP to
provide a lower gain of 102 to 104 and is called "analog mode".
On the other hand, when the light intensity becomes so low (below 10-5 lx)
that the incident photons are separated in time and space, the
photocathode emits very few photoelectrons and only one or no
photoelectrons enter each channel of the MCP. Capturing a continuous
image with a gradation is then no longer possible. In such cases, by
applying about 2.4 kV to the 3-stage MCP to increase the gain to about
106, light spots (single photon spots) with approximately a 60 µm diameter
corresponding to individual photoelectrons will appear on the output
phosphor screen. The gradations of the output image are not expressed
as a difference in brightness but rather as differences in the time and
spatial density distribution of the light spots. Even at extremely low light
levels when only a few light spots appear per second on the output
phosphor screen, an image can be obtained by detecting each spot and
its position, and integrating them into an image storage unit such as a still
camera and video frame memory. The brightness distribution of this
image is configured by the difference in the number of photons at each
position. This operation is known as photon counting mode.
Since image intensifiers using a 3-stage MCP can operate in both analog
mode and photon counting mode, they can be utilized in a wide spectrum
of applications from extremely low light levels to light levels having motion
images.
●GLOSSARY OF TERMS
Photocathode Sensitivity
Dark Count
Luminous Sensitivity: The output current from the photocathode per
the input luminous flux from a standard tungsten lamp (color
temperature: 2856 K), usually expressed in µA/lm (microamperes per
lumen). Luminous sensitivity is a term originally for sensors in the
visible region and is used in this catalog as a guideline for sensitivity.
Radiant Sensitivity: The output current from the photocathode per
the input radiant power at a given wavelength, usually expressed in
A/W (amperes per watt).
Quantum Efficiency (QE): The number of photoelectrons emitted
from the photocathode divided by the number of input photons,
generally expressed in % (percentage). The quantum efficiency and
radiant sensitivity have the following relation at a given wavelength λ.
This indicates the noise level of an image intensifier using a 3-stage
MCP when operated in the photon counting mode.
The dark count is usually expressed as the number of bright spots per
square centimeter on the photocathode measured for a period of one
second (S-1/cm2).
Cooling the photocathode is very effective in reducing the dark count.
Usually, photocathodes (such as red-enhanced or extended red
multialkali, GaAs and Ag-O-Cs) that tend to produce a large number of
dark count at room temperatures should be cooled when used in the
photon counting mode.
Luminous Emittance
This is the luminous flux density emitted from a phosphor screen and
is usually expressed in lm/m2 (lumens per square meter). The
luminous emittance from a completely diffused surface emitting an
equal luminance in every direction is equivalent to the luminance
(cd/m2) multiplied by π.
Gain
Gain is designated by different terms according to the photocathode
spectral response range. Luminous emittance gain is used for image
intensifiers having sensitivity in the visible region. Radiant emittance
gain and photon gain are used for image intensifiers intended to detect
invisible light or monochromatic light so that light intensity must be
expressed in units of electromagnetic energy
Photon gain is also used to evaluate image intensifiers using a P-47
phosphor (see Figure 5) whose emission spectrum is shifted from the
relative visual sensitivity.
Luminous Gain: The ratio of the phosphor screen luminous emittance
(lm/m2) to the illuminance (lx) incident on the photocathode.
Radiant Emittance Gain: The ratio of the phosphor screen radiant
emittance density (W/m2) to the radiant flux density (W/m2) incident on
the photocathode. In this catalog, the radiant emittance gain is
calculated using the radiant flux density at the wavelength of maximum
photocathode sensitivity and the radiant emittance density at the peak
emission wavelength (545 nm) of a P-43 phosphor screen.
Photon Gain: The ratio of the number of input photons per square
meter at a given wavelength to the number of photons per square
meter emitted from the phosphor screen.
MTF (Modulation Transfer Function)
When a black-and-white stripe pattern producing sine-wave changes
in brightness is focused on the photocathode, the contrast on the
output phosphor screen drops gradually as the stripe pattern density is
increased. The relationship between this contrast and the stripe
density (number of line-pairs per millimeter) is referred to as the MTF.
Limiting Resolution
The limiting resolution shows the ability to delineate image detail. This
is expressed as the maximum number of line-pairs per millimeter on
the photocathode (1 line-pair = a pair of black and white lines) that can
be discerned when a black-and-white stripe pattern is focused on the
photocathode. In this catalog, the value at 5 % MTF is listed as the
limiting resolution.
Bright spots appear on the output phosphor screen when an image
intensifier using a 3-stage MCP is operated in the photon counting
mode. The pulse height distribution is a graph showing how many
times a bright spot occurs on the phosphor screen, plotted as a
function of brightness level (pulse height).
When an image intensifier is used with the MCP gain saturated, the
brightness of each spot corresponding to each photoelectron is
equalized on the phosphor screen to allow photon counting imaging.
As noted in the graph below, the pulse height resolution and the P/V
(peak-to-valley) ratio are used to indicate how the bright spots are
aligned.
●Pulse height FWHM
× 100 (%)
resolution =
A
A
●PV Ratio =
FWHM
Fill Width
Half Maximum
PEAK : 1
VALLEY
PEAK
S: Radiant sensitivity (A/W)
λ : Wavelength (nm)
VALLEY
S × 1240
× 100 (%)
λ
NUMBER OF COUNT
QE =
Pulse Height Distribution (PHD) on Phosphor Screen
PHOTON SPOTS BRIGHTNESS
TII C0061EA
Gate Operation
Most photocathodes have a high electrical resistance (surface
resistance) and are not suited for gate operation when used separately.
To allow gate operation at a photocathode, a low-resistance
photocathode electrode (metallic thin film) is usually deposited
between the photocathode and the incident window. Gate operation
can be performed by applying a high-speed voltage pulse to the lowresistance photocathode electrode. Metallic thick films or mesh type
electrodes are provided rather than metallic thin films since they offer
an even lower surface resistance. The gate operation time is
determined by the type of photocathode electrode.
Since the semiconductor crystals of the GaAs and GaAsP
photocathodes themselves have low resistance, no photocathode
electrode film needs to be deposited for gate operation.
EBI (Equivalent Background Input)
This indicates the input illuminance required to produce a luminous
emittance from the phosphor screen, equal to that obtained when the
input illuminance on the photocathode is zero. This indicates the
inherent background level or lower limit of detectable illuminance of an
image intensifier.
Shutter Ratio
The ratio of the brightness on the phosphor screen during gate ON to
that during gate OFF, measured when a gated image intensifier is
operated under standard conditions.
4
●SELECTION CRITERIA (Factors for making the best choice)
Items
Effective Area
★Select the
effective area that
matches the
readout method.
Description/Value
Selectable Range
The 25 mm (16 mm × 16 mm A) diameter type transfers a larger amount of image
18 mm
(13.5 mm × 10 mm) A information to a readout device coupled by using a reduction optical system such as a relay
lens and tapered FOP. This lets you acquire high resolution images.
25 mm
(16 mm × 16 mm) A The 18 mm diameter type (13.5 mm × 10 mm) is compatible with 1-inch CCDs.
Features
Transmitting Wavelength
Window Type
160 nm or longer Standard input window with high UV transmittance.
Synthetic silica
Input Window
Optical element that transmits an optical image with high efficiency and
Fiber optic Plate
★Select the window
350 nm or longer
according to the
no distortion. An image should be focused on the front surface of FOP.
(FOP)
required sensitivity at
Alkali halide crystal that transmits VUV radiation yet offers low
short wavelengths.
115 nm or longer
MgF2
deliquescence.
300 nm or longer Most common glass material used in the visible to near IR region. Not suitable for UV detection.
Borosilicate glass
Features
Photocathode Type Spectral Response
Made from 3 kinds of alkali metals, having high sensitivity from the UV
Up to 900 nm
Multialkali
through near IR region.
Made from 3 kinds of alkali metals, having high sensitivity extending to
Enhanced red
Up to 950 nm
950 nm in the near IR region. Ideal for nighttime viewing.
multialkali
Photocathode
Made from 2 kinds of alkali metals, having sensitivity from the UV to
Up to 650 nm
Bialkali
★Select the
visible region. Background noise is low.
photocathode
Having
sensitivity only in the UV region and almost insensitive to wavelengths
according to the
Cs-Te
Up to 320 nm
required sensitivity at
longer than 320 nm and visible light. Often called "solar blind photocathode".
long wavelengths.
Made from group 3-V crystal having high sensitivity from the visible to
GaAs
Up to 920 nm
near IR region. Spectral response curve is nearly flat from 450 to 850 nm.
Made from group 3-V crystal having very high sensitivity in the visible
GaAsP
Up to 720 nm
region (quantum efficiency 50 % Typ. at 530 nm).
Made from group 3-V crystal having high sensitivity at 1 µm. This
InGaAs
Up to 1100 nm
photocathode is suitable for laser ranging application used by YAG laser.
MCP
Gain: about 103
1 stage
★Select the number
Gain: about 105
2 stage
of stages according
to the required gain.
Gain: more than 106 (For photon counting imaging)
3 stage
Phosphor Screen
Peak Emission
Relative C
10 %
Emission Color
NOTE
Phosphor Type
★Select the decay
Power Efficiency
Wavelength [nm]
Decay Time
time that matches
Green
500
0.4
3 µs to 40 µs B
P24
the readout method
and application, and
1 ms
Standard
Yellowish green
545
1
P43
the spectral emission
B
Short
decay time
0.2
µs
to
0.4
µs
Yellowish
green
510
0.3
P46
that matches the readout device sensitivity.
0.11 µs
Short decay time
Purplish blue
430
0.3
P47
Standard output window and ideal for direct coupling to a CCD with FOP input window, allowing
highly efficient readout. If the phosphor screen is not at ground potential, a NESA (transparent
Fiber optic plate
conductive film) may be needed to prevent noise generated by a high voltage from getting into
(FOP)
Output Window
the CCD. When a relay lens is used, it should be focused on the edge of the FOP.
★Select the window
that matches the
For relay lens readout. The relay lens should be focused on the phosphor screen surface.
Borosilicate glass
readout method.
FOP twisted 180 ° to invert an image. This output window is only for nighttime viewing
Twisted fiber optics applications where the output image is directly viewed by eye. Using a twisted fiber optics
reduces the eyepiece length, making the nighttime viewing unit more compact.
Gate Time
Mesh type (V5548U)
200 ps D
★Select the gate
D
Metallic thick film type (V4323U, V6561U)
250 ps
time that matches
5 ns ( 18 mm type)
the required time
Metallic thin film type
resolution.
10 ns ( 25 mm type)
A: at crystal photocathode
B: Depends on the input pulse width. Refe to Figuer 6 on page 6.
C: Relative value with output from P43 set as 1. Measured with 6 kV voltage applied.
D: Shutter time: Defined as the rise time. The input gate pulse width should be at least twice the shutter time.
5
long decay time is suggested to minimize flicker. Figure 5 shows
typical phosphor spectral emission characteristics and Figure 6 shows
typical decay characteristics.
We also supply phosphor screens singly for use in detection of
ultraviolet radiation, electron beams and X-rays.
INPUT WINDOWS
Figure 4: Typical Transmittance of Window Materials
100
TII B0099EC
Figure 5: Typical Phosphor Spectral Emission Characteristics
100
MgF2
FIBER *
OPTIC
PLATE
10
1
100
120
160
200
240
300
400
WAVELENGTH (nm)
500
EYE
RESPONSE
P43
80
P24
60
40
P46
20
* Collimated transmission
0
350
PHOTOCATHODE
450
500
550
600
650
700
WAVELENGTH (nm)
102
TII B0079EH
P43 DC*
MCP (MICROCHANNEL PLATE)
An MCP is a secondary electron multiplier consisting of an array of
millions of very thin glass channels (glass pipes) bundled in parallel
and sliced in the form of a disk. Each channel works as an
independent electron multiplier. When an electron enters a channel
and hits the inner wall, secondary electrons are produced. These
secondary electrons are then accelerated by the voltage (VMCP)
applied across the both ends of the MCP along their parabolic
trajectories to strike the opposite wall where additional secondary
electrons are released. This process is repeated many times along the
channel wall and as a result, a great number of electrons are output
from the MCP.
The dynamic range (linearity) of an image intensifier depends on the
so-called strip current which flows through the MCP during operation.
When a higher linearity is required, using a low-resistance MCP is
recommended so that a large strip current will flow through the MCP.
The channel diameter of typical MCPs is 6 µm.
MCP Structure and Operation
400
Figure 6: Typical Decay Characteristics
RELATIVE INTENSITY (%)
A photocathode converts light into electrons. This conversion efficiency
depends on the wavelength of light. The relationship between this
conversion efficiency (photocathode radiant sensitivity or quantum
efficiency) and wavelength is called the spectral response
characteristic. (See spectral response characteristics on page 1.)
101
P46
100
P24
P47
10-1
100 ns
100 ns
100 ns 1 ms
1 ms
1 ms
10-2
INPUT LIGHT
PULSE WIDTH
10-3
10-8
SCREEN PEAK CURRENT 8 nA/cm2
10-7
10-6
10-5
10-4
10-3
10-2
10-1
DECAY TIME (s)
* Decay time obtained following to the continuous input light removal.
OUTPUT WINDOW MATERIAL
Please select the desired type according to the readout method.
CHANNEL
CHANNEL WALL
OUTPUT
ELECTRODE
INPUT
ELECTRON
OUTPUT
ELECTRONS
INPUT ELECTRODE
TII B0078EH
P47
BOROSILICATE
GLASS
RELATIVE INTENSITY (%)
TRANSMITTANCE (%)
SYNTHETIC
SILICA
STRIP CURRENT
VD
FIBER OPTIC PLATE (FOP)
The FOP is an optical plate comprising some millions to hundreds of
millions of glass fibers with 6 µm diameter, bundled parallel to one
another.
The FOP is capable of transmitting an optical image from one surface
to another without causing any image distortion.
■Structure of FOP
Optical fiber
TMCPC0002EC
PHOSPHOR SCREEN
The phosphor screen generally absorbs ultraviolet radiation, electron
beams or X-rays and emits light on a wavelength characteristic of that
material. An image intensifier uses a phosphor screen at the output
surface to convert the electrons multiplied by the MCP into light.
Phosphor screen decay time is one of the most important factors to
consider when selecting a phosphor screen type. When used with a
high-speed CCD or linear image sensor, a phosphor screen with a
short decay time is recommended so that no afterimage remains in the
next frame. For nighttime viewing and surveillance, a phosphor with a
Light
An FOP is made up of a bundle of 50 million
optical fibers.
Light
Reflection
Light
6 µm
Light is transmitted from one end to
the other while reflecting from the
surfaces repeatedly.
Light
Each individual optical fiber transmits light
and this light can be received as an
image.
TMCPC0079EA
6
●SELECTION GUIDE (by wavelength)
THIRD GENERATION
Suffix
-71
-73
-74
-76
Wave- A
Input Window C
length
/Index of
of Peak
Response Refraction n D
(nm)
(nm)
Borosilicate Glass
370 to 920 650 to 750
/1.49*3
Borosilicate Glass
280 to 820 480 to 530
/1.49*3
Borosilicate Glass
280 to 720 480 to 530
/1.49*3
Borosilicate Glass
360 to 1100 700 to 800
/1.49*3
Spectral
Response
Range
Effective Photocathode Area
Photocathode
GaAs
Enhanced Red
GaAsP
GaAsP
InGaAs
Standard Standard Gate Function E
Phosphor Output
NOTE
Screen Window 1 stage MCP G
2 stage MCP G
1 stage MCP
P43
FOP
2 stage MCP
1 stage MCP
P43
FOP
2 stage MCP
1 stage MCP
FOP
P43
2 stage MCP
P43
FOP
13.5 mm × 10 mm
non
High Quantum
NIR High Sensitivity
Efficiency
V8070
V8070
V7090
V7090
*
*
1 stage MCP
SECOND GENERATION
Suffix
Spectral
Response
Range
(nm)
Wave- B
Input Window C
length
/Index of
of Peak
Response Refraction n D
(nm)
—
160 to 900
430
-01
160 to 950
600
-02
160 to 650
400
-03
160 to 320
230
250
Effective Photocathode Area
Photocathode
Synthetic Silica
/1.46*1
Synthetic Silica
/1.46*1
Synthetic Silica
/1.46*1
Enhanced Red
Multialkali
Synthetic Silica
/1.51*2
Cs-Te
Multialkali
Bialkali
18 mm
Gate Function E
non
Standard Standard
NOTE
High Resolution
—
Phosphor Output
1 stage MCP G V6886U
—
Screen Window
2 stage MCP G
—
V4170U
3 stage MCP
—
—
1 stage MCP
P43
FOP
2 stage MCP
1 stage MCP
*
P43
FOP
2 stage MCP
*
1 stage MCP
*
P43
FOP
2 stage MCP
*
1 stage MCP
*
P43
FOP
2 stage MCP
*
P43 / P46
3 stage MCP
...Standard product
...Please consult with our sales office.
*: Manufactured upon receiving your order
NOTE: A This number is for quantum efficiency.
B This number is for radiant sensitivity.
C Feel free to contact our sales office for availability of FOP or MgF2 input window.
D Wavelength used measure refractive index: *1: 589.6 nm, *2: 254 nm, *3: 588 nm
E Minimum gate time
F Shutter time: Defined as the rise time. The input gate pulse width should be at least twice the shutter time.
G Image intensifier with a 3-stage MCP capable of photon counting are also available. Feel free to contact our sales office.
TYPE NO. GUIDE
THIRD GENERATION
V
E
B
A–B–CDE F
Suffix
71
Type No.
A: Potting method
B: Input window and photocathode
C: Gate operation
D: Number of MCPs
E: Phosphor screen
F: Output window
A (See dimensional drawing.)
Potting Method
Suffix
Input window is positioned inwards from the front edge of the case.
U
Input window protrudes from the front edge of the case. This
D
type is ideal when using a Peltier cooling to reduce noise.
73
74
76
Input Window Photocathode
Borosilicate Glass
GaAs
Enhanced Red
Borosilicate Glass
GaAsP
Borosilicate Glass GaAsP
Borosilicate Glass InGaAs
C
Suffix
N
G
Gate Type
Non-Gate
Gatable (5 ns)
Phosphor Screen Material
P43
P24
P46
P47
Suffix
0
Output Window
Fiber Optic Plate
Fiber Optic Plate W/NESA
(with Transparent Conductive Coating)
Borosilicate Glass
F
1
2
D
Suffix
1
2
3
Stage of MCP
1
2
3*
* Image intensifier with a 3-stage MCP capable of
photon counting are also available.
V6833P and V7090P the wrap around type of power supply are also available.
7
(Standard type is P43.)
Suffix
3
4
6
7
non
1 µm Type
V8071
V8071
13.5 mm × 10 mm
5 ns
High Quantum
NIR High Sensitivity 1 µm Type
Efficiency
V8070
V8070
V7090
V7090
V8071
V8071
16 mm × 16 mm
5 ns
non
High Quantum
Quantum
NIR High Sensitivity High
NIR High Sensitivity
Efficiency
Efficiency
V9501
V9501
V9569
V9569
V9501
V9501
*
*
*
*
5 ns
High Resolution
Suffix
V9569
V9569
*
-71
*
*
-73
*
*
-74
-76
*
18 mm
250 ps F
200 ps F
non
—
High-speed Gate High-speed Gate High Resolution
25 mm
10 ns
High Resolution
—
—
Suffix
V6887U
—
V4323U V5548U V7669U
—
V7670U
—
—
V4183U V6561U
—
—
V10308U
—
V10309U
—
—
—
—
—
V4435U
—
—
*
*
*
—
*
*
*
*
*
*
*
*
*
*
*
*
-02
*
*
*
*
-01
*
-03
SECOND GENERATION
Hamamatsu second generation image intensifiers are classified by series type No. and suffix No. When you
consult with our sales office about a product or place an order, please carefully refer to the characteristics listed
in the spec table.
If you need custom devices (using a different window or phosphor screen material, low resistance MCP,
transparent conductive film (NESA), special case potting), please let us know about your special requests.
V
U–
Series Type No.
Suffix No.
8
●CHARACTERISTICS
THIRD GENERATION
Effective Photocathode Area
13.5 mm × 10 mm
16 mm × 16 mm
V7090U/D
—
—
V9569U/D
Wavelength
Stage
Suffix
Gate Photocathode
of Peak
of
(Spectral Response Range)
Function
Material
Response
MCP
(nm)
Both type
1
GaAs
600 to 750
-71 (370 nm to 920 nm)
are
2
avairable
-71 (370 nm to 920 nm)
-73 (280 nm to 820 nm)
—
V8070U/D
-74 (280 nm to 720 nm)
1
Both type
are
avairable
1
2
1
2
Both type
are
avairable
—
V8071U/D
V6833P, V7090P (Effective Photocathode Area:
GaAs
Enhanced Red
GaAsP
600 to 750
480 to 530
GaAsP
Enhanced Red
GaAsP
-73 (280 nm to 820 nm)
1
-74 (280 nm to 720 nm)
1
-76 (360 nm to 1100 nm)
1
Both type
are
avairable
InGaAs
700 to 800
1
non
GaAs
600 to 750
Both type
are
avairable
V9501U/D
—
3
1
Type No.
17.5 mm) Non-Suffix (370 nm to 920 nm)
480 to 530
GaAsP
SECOND GENERATION
1
Type No.
Effective Photocathode Area
18 mm
V6886U
V6887U
V4323U, V5548U
V4170U
V4183U, V6561U
V6886U
V6887U
V4170U
V4183U
V6886U
V6887U
V4170U
V4183U
V6886U
V6887U
V4170U
V4183U
25 mm
V7669U
V7670U
—
V10308U
V10309U
V7669U
V7670U
V10308U
V10309U
V7669U
V7670U
V10308U
V10309U
V7669U
V7670U
V10308U
V10309U
—
V4435U
2
4
Wavelength
Stage
Suffix
Gate Photocathode
of Peak
of
(Spectral Response Range)
Function
Material
Response
MCP
(nm)
1
Non-Suffix (160 nm to 900 nm)
Multialkali
430
Enhanced red
Multialkali
600
Bialkali
400
Cs-Te
230
Cs-Te
250
2
1
-01 (160 nm to 950 nm)
2
1
-02 (160 nm to 650 nm)
2
1
-03 (160 nm to 320 nm)
2
-03 (160 nm to 320 nm)
3
Above characteristics are measured using a P43 phosphor screen.
NOTE: 1 Image intensifiers with a 3-stage MCP capable of photon counting are also available. Feel free to contact our sales office.
2 : available, : not available
3 This number is for quantum efficiency.
4 This number is for radiant sensitivity.
5 Typical values measured at the wavelength of peak response (-76 at 1 µm)
6 Typical values measured at 20 °C
9
(These specifications shown in this table are typical value.)
Photocathod Sensitivity
Gain
5
5
Luminous Radiant Quantum
Efficiency
Sensitivity Sensitivity
(QE)
(%)
(µA/lm)
(mA/W)
1500
200
30
1100
147
22
800
192
45
700
214
50
Luminous
Gain
[(lm/m2)/lx]
4.0 × 104
9.6 × 106
3.3 × 104
Equivalent
Background
Input (EBI)
Radiant 5
Emittance
Gain
[(W/m2)/(W/m2)] (lm/cm2)
1.2 × 104
2.7 × 106
2 × 10-11
9.0 × 103
2.5 × 104
5.7 × 106
2.2 × 104
5.0 × 106
1.3 × 104
3.0 × 106
1.4 × 104
3.4 × 106
3×
10-12
Operation
6
Limiting
Resolution
(W/cm2)5
4 × 10-14
Storage Maximum Maximum
Ambient
Vibration
Shock
Temperature
(Lp/mm)
(°C)
64
40
50
8×
10-15
64
40
64
40
750
171
40
2.3 × 104
1.2 × 104
650
192
45
2.0 × 104
1.3 × 104
200
8
1
7.0 × 103
4.6 × 102
3 × 10-10
9 × 10-12
64
1500
200
30
4.0 × 104
1.2 × 104
2 × 10-11
4 × 10-14
64
Photocathod Sensitivity
5
30
15
50
Gain
5
Luminous Radiant Quantum
Efficiency
Sensitivity Sensitivity
(QE)
(%)
(µA/lm)
(mA/W)
280
62
18
230
53
15
150
47
14
170
60
17
150
47
14
550
45
9.3
360
42
8.7
360
43
8.9
250
40
8.3
50
50
14
40
40
12
50
50
14
40
40
12
—
20
11
—
15
8
—
20
11
—
15
8
—
50
Equivalent
Background
Input (EBI)
5
Luminous
Gain
[(lm/m2)/lx]
1.2 × 104
1.1 × 104
1.1 × 104
5 × 106
4 × 106
2.5 × 104
2.1 × 104
1 × 107
8 × 106
3.1 × 103
2.5 × 103
1 × 106
1 × 106
—
—
—
—
—
-20 to +40 300 m/s2
10 Hz to 55 Hz
(30G),
0.7 mm (p-p)
-55 to +60 18 ms
Radiant
Emittance
Gain
[(W/m2)/(W/m2)]
8.7 × 103
6.8 × 103
6.8 × 103
4 × 106
3 × 106
6.2 × 103
5.3 × 103
3 × 106
2 × 106
7 × 103
5.9 × 103
4 × 106
3 × 106
2.6 × 103
2 × 103
1 × 106
7.5 × 105
2.4 × 107
7.2 × 106
(lm/cm2)
Operation
6
(W/cm2)5
Limiting
Resolution
Storage Maximum Maximum
Ambient
Vibration
Shock
Temperature
(Lp/mm)
(°C)
64
1×
10-11
3×
10-14
57
32
64
3 × 10-11
2 × 10-14
32
50
5 × 10-13
-20 to +40 300 m/s2
(30G), 10 Hz to 55 Hz
-55 to +60 18 ms 0.7 mm (p-p)
5 × 10-16
25
40
—
1 × 10-15
22
—
1 × 10-15
18
-55 to +85 400 m/s2
(40G),
-55 to +85 18 ms
10
●CHARACTERISTIC GRAPHS
Figure 7: MTF
Third Generation
Second Generation
100
TII B0100EB
100
90
TII B0077EC
90
1 STAGE MCP
80
80
70
70
60
60
MTF (%)
MTF (%)
1 STAGE MCP
50
2 STAGES MCP
40
40
30
30
20
20
3 STAGES
MCP
10
0
0
10
2 STAGES MCP
50
3 STAGES MCP
10
20
30
40
50
60
0
70
0
SPATIAL RESOLUTION (Lp/mm)
10-9
2 STAGES MCP
50
60
70
ENHANCED RED
MULTIALKALI
10-11
GaAs
105
3 STAGES MCP
1 STAGE MCP
EBI (lm/m2)
LUMINOUS GAIN (lm/m2/lx)
106
104
10-12
MULTIALKALI
10-13
GaAsP
10-14
102
500
1000
1500
2000
2500
10-15
-30
3000
-20
MCP VOLTAGE (V)
TII B0075EB
100
×1
×1
=1
=1
IN
IN
GA
IN
=1
×1
100
04
GA
GA
07
08
102
101
10-1
10-2
10-3
10-4
10-5 -9
10
10-8
10-7
10-6
10-5
10-4
0
+10
+20
+30
+40
Figure 11: Shutter Ratio (color temperature: 2856 k)
RELATIVE PHOSPHOR SCREEN INTENSITY
103
-10
TEMPERATURE (°C)
Figure 10: Photocathode Illuminance
vs. Phosphor Screen Luminous Emittance
PHOSPHORE SCREEN LUMINOUS EMITTANCE (lm/m2)
40
TII B0101ED
10-10
103
10-3
10-2
PHOTOCATHODE ILLUMINANCE (lx)
11
30
Figure 9: Equivalent Background Input (EBI) vs. Temperature
TII B0076EC
107
20
SPATIAL RESOLUTION (Lp/mm)
Figure 8: Luminous Gain vs. MCP Voltage (V8070 Series)
108
10
10-1
TII B0045EB
10-1
10-2
MCP-IN – MCP-OUT
= 900 V dc
MCP-OUT – PHOSPHOR
SCREEN = 6000 V dc
10-3
10-4
10-5
10-6
10-7
1.3 × 109
SHUTTER RATIO
10-8
10-9
10-10
-200
-100
0
+100
PHOTOCATHODE POTENTIAL TO MCP-IN (V)
●WIRING DIAGRAM
Recommended Operation (Example)
Normal Operation
Figure 12: Normal Operation
PHOSPHOR
SCREEN
VK
V MCP
(BLUE)
(BLACK)
(VIOLET)
NOTE: 1 The maximum supply voltage and recommended supply voltage
for the MCP-in and MCP-out are noted on the test data sheet
when the products is delivered. Please refer to the test data
sheet for these values.
MCP (1 TO 3 STAGE)
PHOTOCATHODE
(GREEN)
Supply Voltage (See Figure 12.)
Photocathode – MCP-in (Vk) ...............................150 V to 200 V
MCP-in – MCP-out (VMCP)1 ....1 Stage MCP
500 V to 1000 V
2 Stages MCP 1000 V to 1800 V
3 Stages MCP 1500 V to 2700 V
MCP-out – Phosphor Screen (Vs) ...................5000 V to 6000 V
VS
1 Stage MCP 500 V to 1000 V 1 5000 V to 6000 V
2 Stages MCP 1000 V to 1800 V 1
3 Stages MCP 1500 V to 2700V 1
150 V to 200 V
TII C0017EE
NOTE: A compact high-voltage power supply is available. (See page 15.)
Any electrode (for photocathode, MCP and phosphor screen) can
be connected to ground potential.
Gate Operation
There are two basic circuits for gate operation as shown in Figure 13 below. The supply voltages VMCP and Vs are the same as
those in normal operation. Gate operation is controlled by changing the bias voltage (VB) between the photocathode and MCP-in.
Figure 13: Gate Operation
Normally-OFF mode
The VB is constantly applied as a reverse bias to the
photocathode, so no image appears on the phosphor screen.
An image appears only when a gate pulse (VG) is applied to
the photocathode.
PHOTOELECTRONS
MCP
PHOTOCATHODE
0
GATE ON
PULSE
Normally-ON mode
The VB is constantly applied as a forward bias to the
photocathode, so an image is always seen on the phosphor
screen during operation. The image disappears only when a
gate pulse (VG) is applied to the photocathode.
PHOTOELECTRON
PHOSPHOR
SCREEN
PHOSPHOR
SCREEN
MCP
PHOTOCATHODE
GATE OFF
PULSE
LIGHT
LIGHT
VG
VG
0
C
C
PULSE
GENERATOR
R
PULSE
GENERATOR
VB
VMCP
R
VS
EXAMPLE VB=+30 V
VG=-230 V
EXAMPLE VB=-200 V
VG=+230 V
TII C0018EC
VB
V MCP
VS
TII C0019EF
C, R: Chose the value in consideration of pulse width and repetition rate.
C: High voltage type.
Clamping method for using a vacuum chamber
with MgF2 window
IMAGE INTENSIFIER
O-RING
INPUT WINDOW
(MgF2)
18 mm or
25 mm
FIBER OPTIC PLATE
VACUUM
CHAMBER
VACUUM FLANGE
TII C0062ED
12
●DIMENSIONAL OUTLINES
(Unit: mm)
V7090U/D series, V8070U/D series, V8071U/D series (Effective photocathode area: 13.5 mm × 10 mm)
V7090U, V8070U, V8071U series
PHOSPHOR
SCREEN
BLACK
VIOLET
GREEN
GRAY*
BLUE
PHOTOCATHODE
0.5 ± 0.2
14.64 ± 0.1
10
13.5
LEAD LENGTH 200 MIN.
23.0 ± 0.3
INPUT VIEW
MCP
A
1 srtage
1.9 ± 0.6
2 srtages 1.4 ± 0.6
OUTPUT
WINDOW *
INTPUT
WINDOW
A
5.5 ± 0.1
13.5
EFFECTIVE
PHOSPHOR
SCREEN
AREA
21.8
19
10
7 7
+0
45.0 –0.3
EFFECTIVE
PHOTOCATHODE
AREA
OUTPUT VIEW
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0043ED
V7090D, V8070D, V8071D series
INTPUT
WINDOW
MCP
2 srtages 21.6 ± 0.5
10
13.5
0.5 ± 0.2
14.64 ± 0.1
LEAD LENGTH 200 MIN.
A
A
1 srtage 21.1 ± 0.5
OUTPUT
WINDOW *
0.6 ± 0.6
5.5 ± 0.1
INPUT VIEW
EFFECTIVE
PHOSPHOR
SCREEN
AREA
21.8
31.1
+0
7 7
10
13.5
PHOSPHOR
SCREEN
BLACK
VIOLET
GREEN
GRAY*
BLUE
PHOTOCATHODE
45.0 –0.3
EFFECTIVE
PHOTOCATHODE
AREA
OUTPUT VIEW
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0053EF
V6886U, V6887U, V4170U, V4183U series
Suffix: Non,-01,-02,-03
21.8
19
M
IN
.
45.0 –0.3
+0
OUTPUT
WINDOW *
0.5 ± 0.2
INTPUT
WINDOW
A
5.5 ± 0.1
EFFECTIVE
PHOSPHOR
SCREEN
AREA
18
PHOSPHOR
SCREEN
BLACK
VIOLET
GREEN
GRAY*
BLUE
PHOTOCATHODE
7 7
18
M
IN
.
EFFECTIVE
PHOTOCATHODE
AREA
LEADLENGTH
200 MIN.
B
23.0 ± 0.3
INPUT VIEW
OUTPUT VIEW
TYPE No.
A
B
V6886U, V6887U
2.0 ± 0.6
14.64 ± 0.1
V4170U, V4183U
1.6 ± 0.7
14.17 ± 0.1
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)* *ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0033EE
Input window: FOP or MgF2
OUTPUT
WINDOW *
0.5 ± 0.2
B
5.5 ± 0.1
M
IN
.
21.8
31.1
+0
45.0 –0.3
INPUT
WINDOW
EFFECTIVE
PHOSPHOR
SCREEN
AREA
18
PHOSPHOR
SCREEN
BLACK
VIOLET
GREEN
GRAY*
BLUE
PHOTOCATHODE
7 7
18
M
IN
.
EFFECTIVE
PHOTOCATHODE
AREA
LEADLENGTH
200 MIN.
C
INPUT VIEW
A
OUTPUT VIEW
TYPE No.
A
B
C
V6886U, V6887U
21.0 ± 0.5
0.5 +0.6
-0.5
14.64 ± 0.1
V4170U, V4183U
21.4 ± 0.6
0.4 +0.6
-0.4
14.17 ± 0.1
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)* *ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0034EF
13
V4323U, V5548U, V6561U series
54
N.
MI
18
BLACK (MCP-OUT)
EFFECTIVE
PHOSPHOR SCREEN
AREA
MCP-IN TAB
(0.25 THICK)
36
31.1
20
12 PLASTIC
IN THIS REGION
SKIM POTTING
IN THIS REGION
B
PHOTO2.1
CATHODE TAB
(0.25 THICK)
A
Type No.
21.8
44.5 +0
–0.2
EFFECTIVE
PHOTOCATHODE
AREA
N.
MI
18
4.9
21.4 ± 0.6
5.4
V6561U
PHOTOCATHODE
1
LEAD LENGTH
5.5 ± 0.1
200 MIN.
1
B
V4323U, V5548U 21.1 ± 0.5
BLUE (PHOSPHOR SCREEN)
A
INPUT VIEW
OUTPUT VIEW
TII A0001EC
V7669U, V7670U, V10308U, V10309U series
Suffix: Non,-01,-02,-03
PHOSPHOR SCREEN
OUTPUT
WINDOW
GRAY*
M
25
BLUE
BLACK
VIOLET
B
A
TYPE No.
A
B
V7669U, V7670U
5.94 ± 0.1
2.5 ± 0.6
V10308U, V10309U 5.53 ± 0.1
2.1 ± 0.7
IN
28.5
26
.
IN
M
25
EFFECTIVE
PHOSPHOR
SCREEN
AREA
.
PHOTOCATHODE
INPUT WINDOW
53.0 +0
-0.3
EFFECTIVE
PHOTOCATHODE
AREA
0.5 ± 0.2 GREEN
11.7 ± 0.1
21.0 ± 0.3
INPUT VIEW
LEAD LENGTH
200MIN.
OUTPUT VIEW
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0018EC
Input window: FOP or MgF2
EFFECTIVE
PHOTOCATHODE
AREA
PHOSPHOR SCREEN GREEN
VIOLET
INPUT
A
BLACK
WINDOW
EFFECTIVE
PHOSPHOR
SCREEN
AREA
TYPE No.
A
B
C
V7669U, V7670U
5.94 ± 0.1
0.5 ± 0.5
18.5 ± 0.5
0.4 +0.65
-0.4
18.9 ± 0.55
GRAY*
BLUE
0.5 ± 0.2
11.7 ± 0.1
PHOTOCATHODE
B
C
INPUT VIEW
.
IN
M
25
28.5
V10308U, V10309U 5.53 ± 0.1
44
25
M
IN
.
53.0 +0
-0.3
OUTPUT
WINDOW
LEAD LENGTH
200MIN.
OUTPUT VIEW
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: POM (POLY OXY METHYIENE)
TII A0046EB
V4435U-03
EFFECTIVE
PHOSPHOR SCREEN
AREA
M
IN
.
26
53.0 +0
-0.3
25
M
IN
.
INPUT WINDOW
BLACK
BLUE
WHITE
OUTPUT
WINDOW
25
PHOTOCATHODE
(Cs-Te)
28.5
EFFECTIVE
PHOTOCATHODE
AREA
VIOLET
3.25 ± 0.10
2±1
INPUT VIEW
GREEN
0.5 ± 0.2
22.0 ± 0.2
4-M2 DEPTH 3 PCD49
LEAD LENGTH 200 MIN.
OUTPUT VIEW
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
WHITE (NESA/GND)*
*ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
CASE MATERIAL: ALUMINUM
TII A0049EA
14
●DIMENSIONAL OUTLINES
(Unit: mm)
V9501U/D series, V9569U/D series (Effective photocathode area: 16 mm × 16 mm)
V9501U, V9569U series
PHOSPHOR SCREEN
GREEN
VIOLET
BLACK
BLUE
GRAY*
5.94 ± 0.10
28.5
26
16
+0
53 - 0.3
PHOTOCATHODE
EFFECTIVE
PHOSPHOR SCREEN
AREA
16
EFFECTIVE
PHOTOCATHODE
AREA
MCP
A
1 stage
2.4 ± 0.6
2 stage
2.0 ± 0.6
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
OUTPUT
WINDOW
INPUT WINDOW
16
LEAD LENGTH
200 MIN.
0.5 ± 0.2
A
11.7 ± 0.1
INPUT VIEW
* ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
16
CASE MATERIAL: POM (POLY OXY METHYIENE)
OUTPUT VIEW
21.0 ± 0.3
TII A0063EA
V9501D, V9569D series
PHOSPHOR SCREEN
5.94 ± 0.10
EFFECTIVE
PHOSPHOR SCREEN
AREA
28.5
44
16
+0
53 - 0.3
PHOTOCATHODE
GREEN
VIOLET
BLACK
BLUE
GRAY*
16
EFFECTIVE
PHOTOCATHODE
AREA
OUTPUT
WINDOW
16
INPUT WINDOW
11.7 ± 0.1
INPUT VIEW
A
B
0.6 ± 0.6
18.6 ± 0.5
2 stage
0.5 ± 0.5
19.0 ± 0.5
LEAD (COVER: PTFE [Polytetrafluoroethylene])
GREEN (PHOTOCATHODE)
VIOLET (MCP-IN)
BLACK (MCP-OUT)
BLUE (PHOSPHOR SCREEN)
GRAY (NESA/GND)*
* ONLY WITH TRANSPARENT
CONDUCTIVE COATING (NESA)
LEAD LENGTH
200 MIN.
0.5 ± 0.2
A
MCP
1 stage
16
CASE MATERIAL: POM (POLY OXY METHYIENE)
OUTPUT VIEW
B
TII A0064EA
V6833P (Built-in power supply)
31.0 ± 0.2
5.5 ± 0.1
1.5
INPUT WINDOW
(BOROSILICATE GLASS)
18.6
EFFECTIVE
PHOSPHOR SCREEN AREA
N.
60 °
18.6
+0
26
36.8 - 0.2
2.5
N.
MI
.5
17
R40
20
4±1
INPUT VOLTAGE
(+2 V to +5 V)
0.35
5
1.0 ± 0.1
4.9
EFFECTIVE
PHOTOCATHODE AREA
.5
17
MI
OUTPUT WINDOW
(TWISTED CONCAVE
FIBER OPTIC PLATE)
9.5
CASE MATERIAL: POM (POLY OXY METHYIENE)
GND
PHOTOCATHODE (GaAs)
INPUT VIEW
OUTPUT VIEW
TII A0031EC
V7090P (Built-in power supply)
EFFECTIVE PHOSPHOR
SCREEN AREA
INPUT
WINDOW
31.3 ± 0.6
PHOTOCATHODE
4.8 ± 0.15
GND
INPUT VOLTAGE (+2 V to +5 V)
+0.13
23 - 0
+0.2
21.6 - 0
± 0.1
.5
0.63 ± 0.10
5.5 ± 0.1
19.73 ± 0.30
R18
+
17
.5
17
INPUT VIEW
43.1 - 0.75
+0.08
–
OUTPUT
WINDOW
3.25 ± 0.15
14.20 ± 0.15
8
0.
R
EFFECTIVE
PHOTOCATHODEAREA
1.6 ± 0.15
CASE MATERIAL: POM (POLY OXY METHYIENE)
OUTPUT VIEW
TII A0048EC
15
●HANDLING PRECAUTIONS AND WARRANTY
HANDLING PRECAUTIONS
●Do not apply excessive shocks or vibrations during transportation, installation, storage or
operation. Image intensifiers are an image tube evacuated to a high degree of vacuum. Excessive
shocks or vibrations may cause failures or malfunctions. For reshipping or storage, use the
original package received from Hamamatsu.
●Never touch the input or output window with bare hands during installation or operation. The
window may become greasy or electrical shocks or failures may result.
Do not allow any object to make contact with the input or output window. The window might
become scratched.
●Dust or dirt on the input or output window will appear as black blemishes or smudges. To remove
dust or dirt, use a soft cloth to wipe the windows thoroughly before operation. If fingerprints or
marks adhere to the windows, use a soft cloth moistened with alcohol to wipe off the windows.
Never attempt cleaning any part of image intensifiers while it is in operation.
●Never attempt to modify or to machine any part of image intensifiers or power supplies.
●Do not store or use in harsh environments. If image intensifiers is left in a high-temperature, salt or
acidic atmosphere for a long time, the metallic parts may corrode causing contact failure or a
deterioration in the vacuum level.
●Image intensifiers are extremely sensitive optical devices. When applying the MCP voltage without
using an excessive light protective circuit, always increase it gradually while viewing the emission
state on the phosphor screen until an optimum level is reached.
●Do not expose the photocathode to strong light such as sunlight regardless of whether in
operation or storage.
Operating the image intensifiers while a bright light (e.g. room illumination) is striking the
photocathode, might seriously damage the photocathode.
The total amount of photocurrent charge that flows in the photocathode while light is incident
during operation has an inverse proportional effect on photocathode life. This means that the
amount of incident light should be kept as small as possible.
●Never apply the voltage to image intensifiers exceeds the maximum rating. Especially if using a
power supply made by another company, check before making connections to the image
intensifier, that the voltage appling to each electrode is correct.
If a voltage in excess of the maximum rating is applied even momentarily, the image intensifier
might fail and serious damage might occur.
●Use only the specified instructions when connecting an image intensifier to a high-voltage power
supply module.
If the connections are incorrect, image intensifiers might be instantly damaged after the power is
turned on. Use high-voltage connectors or solder having a high breakdown voltage. When
soldering, provide sufficient insulation at the solder joint by using electrical insulation tape capable
of withstanding at least 10 kV or silicon rubber that hardens at room-temperature and withstands
at least 20 kV/mm.
WARRANTY
Hamamatsu image intensifiers are warranted for one year from the date of delivery or 1000 hours of
actual operation, whichever comes first. This warranty is limited to repair or replacement of the
product. The warranty shall not apply to failure or defects caused by natural disasters, misused or
incorrect usage that exceeds the maximum allowable ratings.
When ordering, please double-check all detailed information.
16
●SEPARATE POWER SUPPLIES
Hamamatsu offers various types of separate modular power supplies designed to provide the high voltages needed for image intensifier
operation. These power supplies are compact, lightweight and operate on a low voltage input. Image intensifier gain is easily controlled by
adjusting the control voltage for the MCP voltage or the control resistance. Please select the desired product that matches your application.
FOR DC OPERATION
Input
Output
MCP
MCP-Out–
1
Max. Control Photocathode– MCP-In–
Type No. Voltage CurMCP-In
MCP-Out
Phosphor Screen Ground
Voltage
Max.
rent
Voltage Current Voltage Max. Current
Voltage
(V) (mA)
(V)
(µA) (V)
(µA)
(V)
(V)
C6706 1 +15±1.5
2
20
C6706-20 +12±1.2
500 to 1000
+5 to +10
Excess current (excess light)
protective function
0.1 to 1
-200
6000
Applicable I.I.
ABC (Automatic Brightness Control)
0.25 to 0.75
60
1
Features
MCP-in
2
ABC (Automatic Brightness Control)
C8499-020
1000 to 2000 100
+10±0.5 150
0.05 to 5
Excess current (excess light)
protective function
C8499-220
V6886U, V7669U
V7090⁄-71-N1⁄⁄
V8070⁄-74-N1⁄⁄
V4170U, V10308U
V7090⁄-7⁄-N⁄2⁄
V8070⁄-7⁄-N⁄2⁄
FOR GATE OPERATION (100 ns to DC operation at maximum repetition rate of 1 kHz)
Input
MCP Voltage Gate Signal Input Level
Type No. Voltage Current Control
Voltage
(V)
(mA Max.)
(V)
Gate On
Voltage
Gate Off
Voltage
(V)
(V)
Photocathode–
MCP-In
Voltage
(V)
Output
MCP-In–
MCP-Out–
1
MCP-Out Phosphor Screen Ground Features
Max.
Voltage Max. Current
Voltage Current
(µA)
(µA)
(V)
(V)
V6887U, V7670U, V5181U
V7090⁄-71-G1⁄⁄
V8070⁄-74-G1⁄⁄
V4183U, V10309U
V7090⁄-7⁄-G⁄2⁄
V8070⁄-7⁄-G⁄2⁄
1
C6083-010
+10±0.5
200
+5 to +10
C6083-020
500 to 1000
0
+5
(TTL Low) (TTL High)
-200
50
ABC 2
6000 0.05 to 5 MCP-in
1000 to 2000
NOTE: 1Other ground terminal types and other input voltage types are also available. Please consult our sales office.
Applicable I.I.
2ABC: Automatic Brightness Control
■Dimensional Outlines (Unit: mm)
C6706, -20
C6083-010, -020
ABC ADJUSTMENT or EXCESS CURRENT
PROTECTIVE LEVEL ADJUSTMENT
E5
E6
E7
E8
VOLTAGE ADJUSTMENT FOR PHOSPHOR SCREEN
INPUT LEAD LINES
E1
E2
E3
E4
FEP
+15 V or +12 V IN (RED)
GND (BLACK)
CONTROL (WHITE)
S: PHOSPHOR SCREEN (YELLOW)
CASE: BLACK EPOXY
CASE: BLACK EPOXY
FEP
19.05
OUTPUT LEAD LINES
12.7
44.45
MO: MCP-out (BROWN)
MI: MCP-in (RED)
K: PHOTOCATHODE (BLUE)
6.35
4-M2.5
4-No4-40 UNC THICK5.1
6.35
6.35
76.2
101.6
200 MIN.
3.81
38.1
E1: PHOTOCATHODE
E2: MCP-in
E3: MCP-out
E4: PHOSPHOR SCREEN
E5: INPUT VOLTAGE
E6: GND
E7: CONTROL VOLTAGE
E8: GATE IN SIGNAL
50.8
4-3.05
6.35
TII A0051EA
50.8
31.75
37.8
38.1
51.3
E5
E6
E7
E8
E1
E2
E3
E4
CASE: BLACK EPOXY
12.7
C8849-020, -220
4-3.05
4-No4-40 UNC DEPTH5.1
6.35
6.35
76.2
101.6
6.35
200 MIN.
3.81
E1: PHOTOCATHODE
E2: MCP-in
(GND)
E3: MCP-out
E4: PHOSPHOR
SCREEN
E5: INPUT
VOLTAGE
E6: GND
E7: CONTROL
VOLTAGE
E8: NC
TII A0052EB
TII A0070EB
●HOUSING CASE A10505
A10505 is a Housing case for easy to use 45mm outer diameter of Image Intensifier (output window: FOP, MCP: 1stage).
It is available for 1 stage MCP type of V7090U/D, V8070U/D, V8071U/D, V6886U and V6887U series.
Input: C-mount, Output: Hamamatsu's relay lens mount. Screw hole for a tripod can be used for holding.
■Dimensional Outlines (Unit: mm)
30
32.5
17
40
M59X1
ORIGINAL RELAY LENS MOUNT
C-MOUNT
DEPTH 8
65
1/4"-20UNC
DEPTH 10
24.8 ± 1.0
22.9
58.7 ± 1.0
INPUT VIEW
OUTPUT VIEW
MATERIAL: ALUMINIUM
WEIGHT : 250 g
TII A0069EA
17
●RELATED PRODUCTS
HIGH-SPEED GATED IMAGE INTENSIFIER UNITS
High-speed gated Image Intensifier (I.I.) unit comprises proximity focused I.I., high voltage
power supply and gate driver circuit. Depending on application, a best gated I.I. unit can be
selected from among various models.
The built-in I.I. is available with GaAsP photocathode or Multialkali photocathode The GaAsP photocathode type delivers very high quantum efficiency in visible region ideal for bio/fluorescence imaging application under a microscope. The Multialkali photocathode type
offers a wide spectral range from UV (Ultra Violet) to NIR (Near Infrared Region).
All of gated I.I. units can be operated and controlled from a remote controller or a PC (Personal Computer) via a USB interface controller. HAMAMTSU also provides suitable relay
lenses or CCD camera with FOP window for C9016/C9546 series.
C9548 series is released newly. This gated I.I. unit is added on a built-in pulse generator
function and then it can be operatable at 500 ns min burst operation.
SELECTION GUIDE
C9016 Series
C9546 Series
Type No.
Suffix No.
-01(-21) -02(-22) -03(-23) -04(-24) -01 -02 -03 -04
10 µs (20 ns)
3 ns
Gate Time
200 Hz (2 kHz)
30 kHz
Gate Repetition Rate
17 1
17 1
Effective Area
GaAsP
Multialkali
GaAsP
Multialkali
Photocathode Material
280 to 720 185 to 900 280 to 720 185 to 900
Spectral Response
50
15
14
50
18
17
Peek QE 3
1
2
1
2
1
2
1
2
MCP Stage
No
No
Built-in Pulse Generator Function
C9547 Series
-01 -02 -03 -04
5 ns
10 ns
30 kHz
25 2
GaAsP
Multialkali
280 to 720 185 to 900
45
15
14
1
2
1
2
No
C9548 Series
-02 -03 -04
10 ns
200 kHz
25 2
GaAsP
Multialkali
280 to 720 185 to 900
45
15
14
1
2
1
2
Yes
-01
Unit
—
—
mm
—
nm
%
—
—
NOTE: 1Effective output area is 12.8 mm × 9.6 mm. Take the effective area of the camera and reduction rate of the relay lens to be used into account.
2Effective output area is 16 mm × 16 mm. Take the effective area of the camera and reduction rate of the relay lens to be used into account.
3Typical at peak wavelength.
ICCD CAMERA
WITH HIGH-SPEED ELECTRONIC SHUTTER C10054 SERIES
The C10054 series is an easy to use compact camera housing an image intensifier fibercoupled to a CCD, as well as a CCD drive circuit, high-voltage power supply and highspeed gate circuit. The C10054 series makes it easy to measure low-light-levels and
capture images of various high-speed phenomena.
A wide lineup of 18 models are currently provided allowing you to select multialkali, GaAs
or GaAsP photocathodes the number of MCPs.
SELECTION GUIDE
EIA
Signal System
CCIR
Progressive Scan
Effective Imaging Area
Photocathode Material
Spectral Response
Shutter Time (Min.)
Shutter Repetition Frequency (Max.)
Stage of MCP
Limiting Resolution
C10054-01
C10054-11
C10054-21
C10054-02
C10054-12
C10054-22
GaAsP
280 to 720
1
470
2
450
C10054-03
C10054-04
C10054-13
C10054-14
C10054-23
C10054-24
12.8 × 9.6
Multialkali
185 to 900
5
2
2
1
420
480
C10054-05
C10054-15
C10054-25
C10054-06
C10054-16
C10054-26
GaAs
370 to 920
1
470
2
450
Unit
mm
—
nm
ns
kHz
—
TV Lines
18
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan
Telephone: (81)539/62-5248, Fax: (81)539/62-2205
www.hamamatsu.com
Main Products
Sales Offices
Electron Tubes
Photomultiplier Tubes
Photomultiplier Tube Modules
Microchannel Plates
Image Intensifiers
Xenon Lamps / Mercury Xenon Lamps
Deuterium Lamps
Light Source Applied Products
Laser Applied Products
Microfocus X-ray Sources
X-ray Imaging Devices
Asia:
HAMAMATSU PHOTONICS K.K.
325-6, Sunayama-cho, Naka-ku,
Hamamatsu City, 430-8587, Japan
Telephone: (81)53-452-2141, Fax: (81)53-456-7889
Opto-semiconductors
Si photodiodes
APD
Photo IC
Image sensors
PSD
Infrared detectors
LED
Optical communication devices
Automotive devices
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Mini-spectrometers
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Imaging and Processing Systems
Cameras / Image Processing Measuring Systems
X-ray Products
Life Science Systems
Medical Systems
Semiconductor Failure Analysis Systems
FPD / LED Characteristic Evaluation Systems
Spectroscopic and Optical Measurement Systems
U.S.A.:
HAMAMATSU CORPORATION
Main Office
360 Foothill Road, P.O. BOX 6910,
Bridgewater, N.J. 08807-0910, U.S.A.
Telephone: (1)908-231-0960, Fax: (1)908-231-1218
E-mail: [email protected]
Western U.S.A. Office:
Suite 200, 2875 Moorpark Avenue
San Jose, CA 95128, U.S.A.
Telephone: (1)408-261-2022, Fax: (1)408-261-2522
E-mail: [email protected]
United Kingdom:
HAMAMATSU PHOTONICS UK LIMITED
Main Office
2 Howard Court, 10 Tewin Road, Welwyn Garden City,
Hertfordshire AL7 1BW, United Kingdom
Telephone: 44-(0)1707-294888, Fax: 44-(0)1707-325777
E-mail: [email protected]
South Africa Office:
PO Box 1112, Buccleuch 2066,
Johannesburg, Repubic of South Africa
Telephone/Fax: (27)11-802-5505
France, Portugal, Belgium, Switzerland, Spain:
HAMAMATSU PHOTONICS FRANCE S.A.R.L.
Main Office
19, Rue du Saule Trapu Parc du Moulin de Massy
91882 Massy CEDEX, France
Telephone: (33)1 69 53 71 00
Fax: (33)1 69 53 71 10
E-mail: [email protected]
Swiss Office:
Dornacherplatz 7
4500 Solothurn, Switzerland
Telephone: (41)32/625 60 60,
Fax: (41)32/625 60 61
E-mail: [email protected]
REVISED SEPT. 2009
Information in this catalog is
believed to be reliable. However,
no responsibility is assumed for
possible inaccuracies or omission.
Specifications are subject to
change without notice. No patent
rights are granted to any of the
circuits described herein.
© 2009 Hamamatsu Photonics K.K.
Germany, Denmark, The Netherlands, Poland:
HAMAMATSU PHOTONICS DEUTSCHLAND GmbH
Main Office
Arzbergerstr. 10,
D-82211 Herrsching am Ammersee, Germany
Telephone: (49)8152-375-0, Fax: (49)8152-2658
E-mail: [email protected]
Danish Office:
Please contact Hamamatsu Photonics Deutschland GmbH.
The Netherlands Office:
PO Box 50.075, NL-1305 AB Almere Netherlands
Telephone: (31)36-5382-123, Fax: (31)36-5382-124
E-mail: [email protected]
Poland Office:
ul. sw. A. Boboli 8,
02-525 Warszawa, Poland
Telephone: (48)22-646-00-16, Fax: (48)22-646-00-18
E-mail: [email protected]
North Europe and CIS:
HAMAMATSU PHOTONICS NORDEN AB
Main Office
Smidesvägen 12,
SE-171 41 Solna, Sweden
Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
E-mail: [email protected]
Russian Office:
Vyatskaya St. 27, bld. 15
RU-127015, Moscow, Russia
Phone: +7-(495)-258-85-18, Fax: +7-(495)-258-85-19
E-mail: [email protected]
Italy:
HAMAMATSU PHOTONICS ITALIA S.R.L.
Main Office
Strada della Moia, 1/E
20020 Arese (Milano), Italy
Telephone: (39)02-93 58 1733, Fax: (39)02-93 58 1741
E-mail: [email protected]
Rome Office:
Viale Cesare Pavese, 435, 00144 Roma, Italy
Telephone: (39)06-50513454, Fax: (39)06-50513460
E-mail: [email protected]
Belgian Office:
Scientic Park, 7, Rue du Bosquet
B-1348 Louvain-La-Neuve, Belgium
Telephone: (32)10 45 63 34
Fax: (32)10 45 63 67
E-mail: [email protected]
Spanish Office:
C. Argenters, 4 edif 2
Parque Tecnológico del Vallés
E-08290 Cerdanyola, (Barcelona) Spain
Phone: +34 93 582 44 30
Fax: +34 93 582 44 31
e-mail [email protected]
Quality, technology, and service are part of every product.
TII 0004E02
SEPT. 2009 IP