Si APD S9251/S12092 series High sensitivity in near infrared range (λ=900 nm) These are Si APDs that offer enhanced 900 nm band near-infrared sensitivity. They are suitable for applications such as optical rangefinders. Features Applications High sensitivity in near infrared range (λ=900 nm) Optical rangefinders Stable operation FSO (free space optics) Structure / Absolute maximum ratings Type no. S12092-02 S12092-05 S9251-10 S9251-15 Dimensional outline/ Window material*1 Package (1)/K TO-18 (2)/K Effective*2 photosensitive area size (mm) φ0.2 φ0.5 φ1.0 φ1.5 TO-5 Operating temperature Topr (°C) -20 to +85 Absolute maximum ratings Storage temperature Soldering Tstg conditions (°C) -55 to +125 260 °C or less, within 10 s Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: K=borosilicate glass *2: Area in which a typical gain can be obtained Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. S12092-02 S12092-05 S9251-10 S9251-15 PhotoQuantum Breakdown Dark*2 Cutoff*3 Spectral Peak*3 Excess*3 voltage Temp. Terminal*3 sensitivity efficiency current frequency response sensitivity Gain noise VBR coefficient capacitance S QE ID fc range wavelength M figure ID=100 μA of VBR Ct M=1 M=1 λp RL=50 Ω λ x λ=900 nm λ=900 nm λ=900 nm Typ. Max. Typ. Max. λ=900 nm (nm) (nm) (A/W) (%) (V) (V) (V/°C) (nA) (nA) (MHz) (pF) 0.1 1 0.4 400 0.2 2 0.7 440 to 1100 860 0.52 72 250 350 1.85 0.3 100 0.4 4 380 1.9 0.8 8 350 3.6 *3: Values measured at a gain listed in the characteristics table www.hamamatsu.com 1 Si APD S9251/S12092 series Spectral response (M=100) Quantum efficiency vs. wavelength (Typ. Ta=25 °C, M at 860 nm) 60 (Typ. Ta=25 °C) 90 80 M=100 Quantum efficiency (%) Photosensitivity (A/W) 50 40 30 20 M=50 70 60 50 40 30 20 10 10 0 200 400 600 800 1000 0 200 1200 400 Wavelength (nm) 600 800 1000 Wavelength (nm) KAPDB0079EA KAPDB0080EB Dark current vs. reverse voltage Gain vs. reverse voltage (Typ. Ta=25 °C) 1 μA 1200 (Typ. λ=900 nm) 10000 100 nA 20 °C 40 °C 60 °C 1000 1 nA Gain Dark current 10 nA S9251-15 -20 °C 0 °C 110 120 100 S9251-10 100 pA S12092-02 10 pA 10 S12092-05 1 pA 0 100 200 300 Reverse voltage (V) 1 100 130 140 150 Reverse voltage (V) KAPDB0081EB KAPDB0082EA 2 Si APD S9251/S12092 series Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) Terminal capacitance (pF) 1000 100 S9251-15 10 S9251-10 1 S12092-02 S12092-05 0.1 0 100 200 300 Reverse voltage (V) KAPDB0083EB Dimensional outlines (unit: mm) (1) S12092-02/-05 Photosensitive surface 0.4 max. (13.5) 0.45 Lead Photosensitive surface 0.45 Lead 4.2 ± 0.2 (20) 8.1 ± 0.1 Window 5.9 ± 0.1 3.6 ± 0.2 9.1 ± 0.2 4.7 ± 0.1 Window 3.0 min. 2.8 ± 0.2 5.4 ± 0.1 2.6 ± 0.2 (2) S9251-10/-15 5.08 ± 0.2 2.54 ± 0.2 1.5. max. Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 Case Case The glass window may extend a maximum of 0.1 mm above the upper surface of the cap. KAPDA0029EB Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.4 The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KAPDA0030EB 3 Si APD S9251/S12092 series Replacements for previous products Previous product (listed on the previous datasheet) S9251-02 S9251-05 Replacement (listed on this datasheet) S12092-02 S12092-05 * Products that have been removed from this datasheet Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic package products / Precautions Technical information ∙ Si APD / Technical information Information described in this material is current as of October, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KAPD1013E04 Oct. 2013 DN 4