Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit: mm +0.2 2.8 –0.3 ■ Features (Ta=25˚C) Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 7 V Emitter to base voltage VEBO 2 V Collector current IC 10 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.45 0.95 +0.1 0.4 –0.05 1.9±0.2 0.95 0.16 –0.06 +0.1 1:Bae 2:Emitter 3:Collector 0 to 0.1 Symbol Parameter 3 0.1 to 0.3 0.4±0.2 Parameter ■ Electrical Characteristics 1 0.8 1.1 –0.1 ■ Absolute Maximum Ratings 0.65±0.15 2 +0.2 ● +0.2 ● 0.65±0.15 Possible with the small current and low voltage. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.9 –0.05 ● +0.25 1.5 –0.05 JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 2X (Ta=25˚C) Symbol Conditions Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 1.5V, IC = 0 Forward current transfer ratio hFE VCE = 1V, IC = 1mA Transition frequency fT VCE = 1V, IC = 1mA, f = 800MHz Collector output capacitance Cob VCB = 1V, IE = 0, f = 1MHz min typ VCB = 10V, IE = 0 |2 50 100 max Unit 1 nA 1 µA 150 4 GHz 0.4 pF Foward transfer gain | S21e VCE = 1V, IC = 1mA, f = 800MHz 6 dB Maximum unilateral power gain GUM VCE = 1V, IC = 1mA, f = 800MHz 15 dB Noise figure NF VCE = 1V, IC = 1mA, f = 800MHz 3.5 dB Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure. 1 2SC3707 Transistor PC — Ta IC — VCE 60 25 40µA 35µA 4 30µA 25µA 3 20µA 15µA 2 10µA 1 50 Collector current IC (mA) 50 60 80 100 120 140 160 0.4 10 3 1 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 10 30 0.2 10 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 Ta=75˚C 120 25˚C 80 –25˚C 40 1 3 10 24 30 VCE=1V f=800MHz Ta=25˚C 10 8 6 4 2 0 0.1 100 0.3 1 3 10 30 100 Collector current IC (mA) NF — IC 6 VCE=1V f=800MHz Ta=25˚C 20 16 12 8 4 0 0.1 2.0 fT — IC 160 0.3 1.6 Base to emitter voltage VBE (V) VCE=1V (Rg=50Ω) f=800MHz Ta=25˚C 5 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.4 3 0 GUM — IC 0.6 1 2.4 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.3 2.0 200 0 0.1 100 0.8 0 0.1 1.6 12 Cob — VCB 1.0 1.2 VCE=1V Collector current IC (mA) 1.2 0.8 240 Forward current transfer ratio hFE 30 0.3 20 hFE — IC IC/IB=10 –25˚C 30 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 25˚C Ta=75˚C 0 0 Transition frequency fT (GHz) 40 40 10 5µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 45µA 5 75 0 Collector output capacitance Cob (pF) VCE=1V Ta=25˚C IB=50µA 0 2 IC — VBE 6 Collector current IC (mA) Collector power dissipation PC (mW) 100 4 3 1 1 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100