Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification ● 0.5±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ■ 1.5±0.1 4.5±0.1 1.6±0.2 Features 2 1 (Ta=25˚C) marking * Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Marking symbol : P Internal Connection * Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 1 W 150 ˚C –55 ~ +150 ˚C 1:Base 2:Collector 3:Emitter C Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter EIAJ:SC–62 Mini Power Type Package B E (Ta=25˚C) Symbol Conditions min typ VCB = 25V, IE = 0 max Unit 100 nA 100 nA Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 4V, IC = 0 Collector to base voltage VCBO IC = 100µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 80 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 V *1 VCE = 10V, IC = 1A*2 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 1.0A, IB = 1.0mA*2 Base to emitter saturation voltage VBE(sat) IC = 1.0A, IB = 1.0mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 4000 40000 1.8 2.2 150 FE V MHz *2 *1h V Pulse measurement Rank classification Rank hFE Marking Symbol Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 PQ PR PS 1 Transistor 2SD1511 PC — Ta IC — VCE 1.0 2.0 0.8 0.6 0.4 0.2 1.6 180µA 160µA 140µA 120µA 100µA 1.2 IB=200µA 80µA 0.8 60µA 0.4 40µA 0 40 80 120 160 200 0 Ambient temperature Ta (˚C) 2 Forward current transfer ratio hFE 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 10 IC/IB=1000 30 10 3 25˚C 3 Collector current IC (A) 10 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Cob — VCB 30 VCE=10V Ta=75˚C 25˚C 104 –25˚C 103 102 10 0.01 0.03 Ta=–25˚C 1 hFE — IC 30 1 8 105 IC/IB=1000 3 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 4 Collector output capacitance Cob (pF) 0 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 IE=0 f=1MHz Ta=25˚C 25 20 15 10 5 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V)