TSM2N60E A14

TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
TO-251
(IPAK)
TO-252
(DPAK)
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
600
V
RDS(on)(max)
4
Ω
Qg (typ)
9.5
nC
Block Diagram
Features
●
●
100% Avalanche Tested
G-S ESD Protection Diode Embedded
Ordering Information
Part No.
Package
Packing
TSM2N60ECH C5G
TO-251
75pcs / Tube
TSM2N60ECP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET with ESD Protection
Absolute Maximum Ratings (TC = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
2
A
1.43
A
Tc = 25℃
Continuous Drain Current (Note 1)
ID
Tc = 100℃
(Note 2)
IDM
8
A
Repetitive Avalanche Current
(Note 1)
IAR
2
A
Repetitive Avalanche Energy
(Note 1)
EAR
5.2
A
EAS
66
mJ
52.1
W
0.416
W/℃
dV/dt
4.5
V/ns
TJ
-55 to +150
℃
TSTG
-55 to +150
℃
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
RӨJC
2.4
℃/W
Thermal Resistance - Junction to Ambient
RӨJA
110
℃/W
Pulsed Drain Current
Single Pulse Avalanche Energy
TC = 25℃
Total Power Dissipation
Peak Diode Recovery dV/dt
(Note 3)
PD
Derate above TC = 25℃
(Note 4)
Operating Junction Temperature
Storage Temperature Range
Thermal Performance
Parameter
1/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
Electrical Specifications (TC = 25℃ unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
(Note 5)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
600
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 1A
RDS(ON)
--
3.2
4
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
3
--
5
V
--
--
1
--
--
10
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TJ = 125℃
IDSS
µA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
µA
Forward Transconductance
VDS = 30V, ID = 1A
gfs
--
3
--
S
Qg
--
9.5
--
Qgs
--
2.1
--
Qgd
--
3.9
--
Ciss
--
362
--
Coss
--
40
--
Crss
--
7.2
--
td(on)
--
21
--
tr
--
22
--
td(off)
--
41
--
tf
--
21
--
Maximum Continuous Drain-Source Diode Forward Current
IS
--
--
2
A
Maximum Pulse Drain-Source Diode Forward Current
ISM
--
--
8
A
Diode-Source Forward Voltage
VGS = 0V, IS = 2A
VSD
--
--
1.5
V
Reverse Recovery Time
VGS = 0V, IS = 2A
dIF/dt = 100A/µs
trr
--
238
--
ns
Qrr
--
0.8
--
nC
Dynamic
(Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 480V, ID = 2A,
VGS = 10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 25V, VGS = 0V,
f = 1MHz
nC
pF
(Note 7)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 300V , VGS = 10V ,
RG = 25W, ID = 2A
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristic
Reverse Recovery Charge
ns
(Note 5)
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. VDD = 50V, L= 30.5mH, IAS = 2A, RG = 25W, Starting TJ = 25℃
4. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDS, Starting TJ = 25℃
5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
6. For DESIGN AID ONLY, not subject to production testing.
7. Switching time is essentially independent of operating temperature.
2/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
Electrical Characteristics Curves (TC = 25℃, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
Electrical Characteristics Curve (TC = 25℃, unless otherwise noted)
Drain Current vs. Case Temperature
BVDSS vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area
Normalized Transient Impedance
4/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
6/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Version: A14