MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA TO-220AB Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR 10H100CT 10H150CT 10H200CT UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current IF(AV) 10 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF= 5A, TJ=25℃ IF= 5A, TJ=125℃ IF=10A, TJ=25℃ IF=10A, TJ=125℃ VF Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range dV/dt 1.0 0.5 0.85 0.88 0.75 0.75 0.95 0.97 0.85 0.85 A V 5 1 10000 μA mA V/μs O RθJC 1.5 TJ - 55 to +175 O C - 55 to +175 O C TSTG Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1308059 Version: I13 C/W MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION AEC-Q101 PART NO. PACKING CODE QUALIFIED MBR10HxxxCT (Note) Prefix "H" GREEN COMPOUND CODE C0 Suffix "G" PACKAGE PACKING TO-220AB 50 / Tube Note 1: "xxx" defines voltage from 100V (MBR10H100CT) to 200V (MBR10H200CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBR10H100CT C0 MBR10H100CT C0 MBR10H100CT C0G MBR10H100CT C0 MBR10H100CTHC0 MBR10H100CT GREEN COMPOUND PACKING CODE QUALIFIED H CODE G DESCRIPTION Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1- FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD A CURRENT (A) 12 10 8 6 4 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 2 0 0 25 50 75 100 125 150 175 180 150 8.3ms Single Half Sine Wave JEDEC Method 120 90 60 30 0 1 10 CASE TEMPERATURE (oC) 100 NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 INSTANTANEOUS REVERSE A CURRENT (mA) INSTANTANEOUS FORWARD A CURRENT (A) 1000 100 TJ=125℃ 10 TJ=25℃ 1 1 TJ=125℃ 0.1 TJ=75℃ 0.01 0.001 TJ=25℃ 0.0001 0.1 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) Document Number: DS_D1308059 1 1.2 1.4 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: I13 140 MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART FIG. 5- TYPICAL JUNCTION CAPACITANCE FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 1000 10 1 0.1 100 0.1 1 10 100 0.01 0.1 1 10 100 T-PULSE DURATION (sec) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1308059 Version: I13 MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308059 Version: I13