TSM7N65A Taiwan Semiconductor N-Channel Power MOSFET 650V, 7A, 1.45Ω FEATURES KEY PERFORMANCE PARAMETERS ● ● ● ● Low Crss typical @ 15pF (Typ.) 100% Avalanche Tested Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition ● PARAMETER VALUE UNIT VDS 650 V RDS(on) (max) 1.45 Ω Qg 27.8 nC APPLICATION ● ● Power Supply Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V TC = 25°C Continuous Drain Current (Note 1) TC = 100°C Pulsed Drain Current (Note 2) ID 7 A 4.2 IDM 28 A PDTOT 40 W EAS 150 mJ IAS 5 A TJ, TSTG - 55 to +150 °C SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 3.1 °C/W Junction to Ambient Thermal Resistance RӨJA 65 °C/W Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. Document Number: DS_P0000142 1 Version: D15 TSM7N65A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 650 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.0 3.0 4.0 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 3.0A RDS(on) -- 1.2 1.45 Ω Qg -- 27.8 -- Qgs -- 5.7 -- Qgd -- 8.8 -- Ciss -- 1406 -- Coss -- 114 -- Crss -- 15 -- Rg -- 1.5 -- td(on) -- 25 -- tr -- 57 -- td(off) -- 83 -- tf -- 61 -- VSD -- -- 1.5 V trr -- 213 -- ns Qrr -- 2480 -- nC IS -- -- 7 A ISM -- -- 28 A Dynamic (Note 5) Total Gate Charge VDS = 480V, ID = 6.0A, VGS = 10V Gate-Source Charge Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz F = 1MHz, open drain nC pF Ω (Note 6) Turn-On Delay Time VDD = 300V, RGEN = 25Ω, ID = 6.0A, VGS = 10V, Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage IS = 3.0A, VGS = 0V Reverse Recovery Time IS =1A dIF/dt = 100A/μs Reverse Recovery Charge Source Current Source Current (Pulse) Integral reverse diode in the MOSFET Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 12mH, IAS = 5.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC 100% Eas Test Condition: L = 12mH, IAS = 2.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS_P0000142 2 Version: D15 TSM7N65A Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM7N65ACI C0G ITO-220 50pcs / Tube Document Number: DS_P0000142 3 Version: D15 TSM7N65A Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics Capacitance Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000142 4 Version: D15 TSM7N65A Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Threshold Voltage vs. Junction Temperature Maximum Safe Operating Area Normalized Thermal Transient Impedance Curve Document Number: DS_P0000142 5 Version: D15 TSM7N65A Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code Document Number: DS_P0000142 6 Version: D15 TSM7N65A Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000142 7 Version: D15