VS-UFB80FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel • Industry standard outline • UL approved file E78996 SOT-227 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS The VS-UFB80FA60 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY VR 600 V IF(AV) per module at TC = 104 °C 80 A trr 34 ns Type Modules - Diode FRED Pt® Package SOT-227 These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Cathode to anode voltage VR Continuous forward current per diode IF TC = 85 °C 57 Single pulse forward current per diode IFSM TC = 25 °C 280 PD TC = 85 °C 174 Any terminal to case, t = 1 minute 2500 V -55 to +175 °C Maximum power dissipation per module RMS isolation voltage VISOL Operating junction and storage temperatures TJ, TStg A W ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.32 1.69 IF = 60 A - 1.52 1.9 IF = 30 A - 1.14 1.39 IR = 100 μA IF = 60 A Reverse leakage current IRM Junction capacitance CT TJ = 125 °C UNITS V - 1.38 1.66 VR = VR rated - 0.1 50 μA TJ = 175 °C, VR = VR rated - 0.2 1.0 mA VR = 600 V - 30 - pF Revision: 31-May-16 Document Number: 93642 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB80FA60 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS TJ = 25 °C Reverse recovery time trr Peak recovery current Reverse recovery charge MAX. 34 - TJ = 25 °C - 79 - - 155 - IF = 30 A dIF/dt = 200 A/μs TJ = 125 °C VR = 200 V TJ = 25 °C Qrr TYP. - TJ = 125 °C TJ = 25 °C IRRM MIN. IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 125 °C - 6 - - 14 - - 234 - - 1085 - UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting TEST CONDITIONS MIN. TYP. MAX. - - 1.02 - - 0.51 - 0.10 - RthJC Junction to case, both leg conducting Case to heatsink RthCS Flat, greased surface Weight Mounting torque °C/W - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Case style SOT-227 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) UNITS TJ = 175 °C 100 TJ = 125 °C 10 TJ = 25 °C 1 TJ = 175 °C 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 0 VFM - Forward Voltage Drop (V) 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 100 10 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 31-May-16 Document Number: 93642 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB80FA60 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (°C/W) 1 PDM 0.1 DC t1 t2 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) 200 VR = 200 V 150 175 125 IF = 30 A, 125 °C 150 DC 100 trr (ns) Allowable Case Temperature (°C) 175 75 125 100 50 Square wave (D = 0.50) 80 % Rated VR applied 25 IF = 30 A, 25 °C 75 0 50 0 10 20 30 40 50 60 70 80 90 100 100 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 200 1750 180 1500 160 140 120 100 80 60 40 DC 20 D = 0.05 D = 0.10 D = 0.20 D = 0.33 D = 0.50 IF = 30 A, TJ = 125 °C 1250 RMS Limit Qrr (nC) Average Power Loss (W) 1000 1000 750 500 IF = 30 A, TJ = 25 °C 250 0 0 0 10 20 30 40 50 60 70 80 90 100 110 100 1000 Average Forward Current - IF(AV) (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 31-May-16 Document Number: 93642 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB80FA60 www.vishay.com Vishay Semiconductors 30 VR = 200 V 25 Irr (A) 20 IF = 30 A, 125 °C 15 IF = 30 A, 25 °C 10 5 0 100 1000 dIF/dt (A/μs) Fig. 9 - Typical Stored Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 93642 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB80FA60 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 80 F A 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (80 = 80 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (60 = 600 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93642 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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