VS-HFA140FA120 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 140 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • UL approved file E78996 SOT-227 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY VR The dual diode series configuration VS-HFA140FA120 is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. 1200 V VF (typical) 2.8 V trr (typical) 48 ns IF(DC) at TC, per module 140 A at 74 °C IF(AV) at TC, per module 140 A at 46 °C Package SOT-227 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Continuous forward current TEST CONDITIONS VR per leg per module Single pulse forward current Maximum power dissipation, per leg RMS isolation voltage Operating junction and storage temperature range IF TC = 74 °C IFSM TJ = 25 °C PD VISOL MAX. UNITS 1200 V 70 140 TC = 25 °C 357 TC = 100 °C 143 Any terminal to case, t = 1 minute TJ, TStg A 350 W 2500 V -55 to +150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage, per leg Reverse leakage current, per leg SYMBOL VBR VFM IRM TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 1200 - - IF = 60 A - 2.8 4.0 IF = 120 A - 3.6 5.3 IF = 60 A, TJ = 125 °C - 2.7 - IF = 60 A, TJ = 150 °C - 2.65 - VR = VR rated - 2.0 75 TJ = 125 °C, VR = VR rated - 1.6 5 TJ = 150 °C, VR = VR rated - 5 10 UNITS V μA mA Revision: 31-May-16 Document Number: 94746 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time, per leg trr Peak recovery current, per leg Qrr Junction capacitance, per leg CT MIN. TYP. MAX. - 48 - TJ = 25 °C - 145 - TJ = 125 °C - 218 - TJ = 25 °C IRRM Reverse recovery charge, per leg TEST CONDITIONS IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V TJ = 125 °C TJ = 25 °C IF = 50 A dIF/dt = - 200 A/μs VR = 200 V - 13 - - 18 - UNITS ns A - 910 - TJ = 125 °C - 1920 - VR = 1200 V - 27 - pF MIN. TYP. MAX. UNITS - - 0.35 nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting TEST CONDITIONS RthJC Junction to case, both legs conducting Case to heatsink RthCS - - 0.175 Flat, greased surface - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Weight Mounting torque SOT-227 10 000 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Case style °C/W 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.5 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 200 400 600 800 1000 1200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 31-May-16 Document Number: 94746 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140FA120 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (°C/W) 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC DC 0.01 0.0001 PDM 0.001 0.01 0.1 10 1 t1 - Rectangular Pulse Duration (s) 300 175 IF = 50 A VR = 200 V 150 250 125 TJ = 125 °C 100 trr (ns) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) DC 75 Square wave (D = 0.50) 80 % rated VR applied 50 150 TJ = 25 °C 100 25 0 0 20 40 60 80 100 50 100 120 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 3000 500 2500 400 IF = 50 A VR = 200 V 2000 300 Qrr (nC) Average Power Loss (W) 200 RMS limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 200 100 TJ = 125 °C 1500 1000 TJ = 25 °C 500 DC 0 0 20 40 60 80 100 120 140 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 31-May-16 Document Number: 94746 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140FA120 www.vishay.com Vishay Semiconductors 40 IF = 50 A VR = 200 V TJ = 125 °C Irr (A) 30 20 TJ = 25 °C 10 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Peak Recovery Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 94746 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140FA120 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 140 F A 120 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Process designator (A = electron irradiated) 4 - Average current (140 = 140 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (120 = 1200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Part marking information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 94746 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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