VS-HFA220FA120 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 220 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • UL approved file E78996 SOT-227 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION/APPLICATIONS PRODUCT SUMMARY VR 1200 V VF (typical) 2.68 V trr (typical) 58 ns IF(AV) per module at TC 220 A at 38 °C Package SOT-227 The dual diode series configuration (VS-HFA220FA120) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Continuous forward TEST CONDITIONS VR current (1) Single pulse forward current Maximum power dissipation per leg RMS isolation voltage UNITS 1200 V IF TC = 68 °C 110 IFSM TJ = 25 °C 700 PD VISOL Operating junction and storage temperature range MAX. A TC = 25 °C 500 TC = 100 °C 400 Any terminal to case, t = 1 minute 2500 V - 55 to 150 °C TJ, TStg W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage Reverse leakage current SYMBOL VBR VFM IRM TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 100 A - 2.68 3.60 IF = 200 A - 3.41 4.70 IF = 100 A, TJ = 150 °C - 2.62 2.89 IF = 200 A, TJ = 150 °C - 3.59 3.89 VR = VR rated - 10 75 TJ = 125 °C, VR = VR rated - 2 - TJ = 150 °C, VR = VR rated - 6 15 IR = 100 μA UNITS V μA mA Note (1) Maximum continuous forward current must be limited at 100 A to do not exceed the maximum temperature of power terminals. Revision: 22-Jul-13 Document Number: 93636 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA220FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A; dIF/dt = - 200 A/μs; VR = 30 V Reverse recovery time trr Peak recovery current Reverse recovery charge Qrr Junction capacitance CT TYP. MAX. - 58 - TJ = 25 °C - 157 - TJ = 125 °C - 255 - IF = 50 A TJ = 25 °C IRRM MIN. dIF/dt = - 200 A/μs TJ = 125 °C VR = 200 V - 15 - - 22.5 - UNITS ns A TJ = 25 °C - 1150 - TJ = 125 °C - 2850 - VR = 1200 V - 53 - pF MIN. TYP. MAX. UNITS - - 0.25 nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting TEST CONDITIONS RthJC Junction to case, both legs conducting - - 0.125 - 0.10 - Weight - 30 - g Mounting torque - - 1.3 Nm Case to heatsink RthCS Flat, greased surface Case style °C/W SOT-227 10 1000 TJ = 150 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) TJ = 150 °C 100 TJ = 125 °C TJ = 25 °C 10 1 TJ = 125 °C 0.1 0.01 0.001 TJ = 25 °C 0.0001 1 0.5 1 1.5 2 2.5 3 3.5 4 0 200 400 600 800 1000 1200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 22-Jul-13 Document Number: 93636 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA220FA120 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 PDM 0.1 t1 0.75 0.50 0.33 0.25 0.20 DC 0.01 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 300 VR = 200 V 150 250 125 IF = 50 A, TJ = 125 °C 200 100 trr (ns) Allowable Case Temperature (°C) 175 DC 75 IF = 50 A, TJ = 25 °C 150 50 100 Square wave (d = 0.5) Rated VR applied 25 50 100 0 0 20 40 60 80 100 120 140 160 180 dIF/dt (A/μs) IF(AV) - Average Forward Current (A) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 800 4000 700 3500 600 3000 VR = 200 V IF = 50 A, TJ = 125 °C 2500 500 RMS Limit 400 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 300 200 100 Qrr (ns) Average Power Loss (W) 1000 2000 IF = 50 A, TJ = 25 °C 1500 1000 500 DC 0 0 0 40 80 120 160 200 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Losses Characteristics (Per Leg) Revision: 22-Jul-13 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Document Number: 93636 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA220FA120 www.vishay.com Vishay Semiconductors 1000 50 CT - Junction Capacitance (pF) VR = 200 V IRR (A) 40 30 IF = 50 A, TJ = 125 °C 20 10 IF = 50 A, TJ = 25 °C 100 10 0 100 10 1000 100 1000 10 000 dIF/dt (A/μs) VR - Reverse Voltage (V) Fig. 8 - Typical Peak Recovery Current vs. dIF/dt Fig. 9 - Typical Junction Capacitance vs. Reverse Voltage Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 22-Jul-13 Document Number: 93636 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA220FA120 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 220 F A 120 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Process designator (A = Electron irradiated) 4 - Average current (220 = 220 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (120 = 1200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out Revision: 22-Jul-13 4 3 1 2 4 3 1 2 F Document Number: 93636 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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