VS-HFA140FA60 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 140 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • UL approved file E78996 SOT-227 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY VR 600 V VF (typical) 1.33 V trr (typical) 43 ns IF(DC) at TC, per module 140 A at 110 °C IF(AV) at TC, per module 140 A at 96 °C Package SOT-227 The dual diode series configuration VS-HFA140FA60 is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as power supplies, battery chargers electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Continuous forward current TEST CONDITIONS VR per leg per module Single pulse forward current IFSM Maximum power dissipation, per leg PD RMS isolation voltage VISOL Operating junction and storage temperature range UNITS 600 V 70 TC = 110 °C IF MAX. 140 A TJ = 25 °C 600 TC = 25 °C 357 TC = 110 °C 114 Any terminal to case, t = 1 minute 2500 V -55 to +150 °C TJ, TStg W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage, per leg Reverse leakage current, per leg SYMBOL VBR VFM IRM TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 60 A - 1.33 1.70 IF = 120 A - 1.56 2.04 IF = 60 A, TJ = 125 °C - 1.24 - IF = 60 A, TJ = 150 °C - 1.19 - VR = VR rated - 2.5 20 TJ = 125 °C, VR = VR rated - 0.8 2 TJ = 150 °C, VR = VR rated - 3 9 IR = 100 μA UNITS V μA mA Revision: 31-May-16 Document Number: 93992 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140FA60 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 43 - IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V Reverse recovery time, per leg trr Peak recovery current, per leg Qrr Junction capacitance, per leg CT - 90 - TJ = 125 °C - 150 - - 9.5 - - 17 - IF = 50 A TJ = 25 °C IRRM Reverse recovery charge, per leg TJ = 25 °C dIF/dt = - 200 A/μs TJ = 125 °C VR = 200 V TJ = 25 °C UNITS ns A - 400 - TJ = 125 °C - 1180 - VR = 600 V - 67 - pF MIN. TYP. MAX. UNITS nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting TEST CONDITIONS - - 0.35 - - 0.175 Flat, greased surface - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) RthJC Junction to case, both legs conducting Case to heatsink RthCS Weight Mounting torque SOT-227 1000 IR - Reverse Leakage Current (µA) IF - Instantaneous Forward Current (A) Case style 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0 °C/W 0.5 1.0 1.5 2.0 2.5 10 000 TJ = 150 °C 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 0 3.0 VFM - Forward Voltage Drop (V) 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 31-May-16 Document Number: 93992 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140FA60 ZthJC - Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 PDM t1 DC t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.1 0.01 10 1 t1 - Rectangular Pulse Duration (s) 180 175 140 125 125 °C IF = 50 A IF = 30 A 120 100 DC 75 100 80 25 °C 50 60 Square wave (D = 0.50) 80 % rated VR applied 25 40 See note (1) 20 100 0 0 40 80 120 160 200 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 2000 250 VR = 200 V IF = 30 A IF = 50 A 200 1500 150 Qrr (nC) Average Power Loss (W) VR = 200 V 160 150 trr (ns) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) RMS limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 50 125 °C 1000 500 25 °C DC 0 0 20 40 60 80 100 120 140 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 31-May-16 Document Number: 93992 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140FA60 www.vishay.com Vishay Semiconductors 40 VR = 200 V 32 IF = 50 A 28 Irr (A) 24 20 125 °C 16 12 IF = 30 A 25 °C 8 4 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Peak Recovery Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 93992 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140FA60 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 140 F A 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Process designator (A = electron irradiated) 4 - Average current (140 = 140 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (60 = 600 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Part marking information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93992 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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