Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 3 2 2.5 1:Base 2:Collector 3:Emitter 1 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Collector cutoff current 0.45±0.05 (Ta=25˚C) 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 1 µA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.3 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF *h FE VCE = 10V, IC = 2mA 160 460 0.5 V Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 1 Transistor 2SD637 PC — Ta IC — VCE 1200 Ta=25˚C 300 200 100 1000 140µA 40 120µA 100µA 30 80µA 60µA 20 800 600 400 40µA 10 200 20µA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 200 Collector current IC (mA) 160 120 25˚C –25˚C 80 40 160 120 80 40 0 0 0.4 0.8 1.2 1.6 2.0 0 Base to emitter voltage VBE (V) 200 400 hFE — IC 600 1000 25˚C 300 –25˚C 200 100 0.3 1 3 10 IC/IB=10 10 3 1 0.3 25˚C 0.1 30 Collector current IC (mA) 100 –25˚C 0.01 0.1 0.3 1 3 10 30 100 Cob — VCB 240 180 120 60 0 – 0.1 – 0.3 Ta=75˚C 0.03 12 Collector output capacitance Cob (pF) Ta=75˚C 1.0 Collector current IC (mA) VCB=10V Ta=25˚C Transition frequency fT (MHz) 400 0.8 30 fT — I E VCE=10V 0 0.1 800 300 500 0.6 100 Base current IB (µA) 600 0.4 VCE(sat) — IC 240 VCE=10V 0 0.2 Base to emitter voltage VBE (V) IC — I B 200 Ta=75˚C 0 Collector to emitter voltage VCE (V) IC — VBE Collector current IC (mA) Base current IB (µA) 50 400 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=160µA 0 2 IB — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 500 IE=0 f=1MHz Ta=25˚C 10 8 6 4 2 0 –1 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) Transistor 2SD637 NV — IC 240 VCE=10V Ta=25˚C Function=FLAT 200 VCE=5V f=270Hz 30 160 h Parameter Noise voltage NV (mV) h Parameter — IC 100 Rg=100kΩ 120 80 10 1 22kΩ 4.7kΩ 40 hfe (✕100) 3 hoe (10–1µS) hre (✕10–4) 0.3 hie (✕10kΩ) 0 10 30 100 300 Collector current IC (µA) 1000 0.1 0.1 0.3 1 3 10 Collector current IC (mA) 3