Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 Unit: mm 6.9±0.1 Symbol Collector to 2SB643 base voltage 2SB644 Collector to 2SB643 Ratings –30 VCBO –60 VCEO emitter voltage 2SB644 –50 1.0 0.55±0.1 0.45±0.05 V 2 1 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 4.5±0.1 7 0. 0.85 Unit 3 –25 2.4±0.2 2.0±0.2 3.5±0.1 Parameter (Ta=25˚C) 1.25±0.05 ■ Absolute Maximum Ratings 1.0 R M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 4.1±0.2 1.5 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –20V, IE = 0 –100 nA ICEO VCE = –20V, IB = 0 –1 µA VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –7 hFE1*1 VCE = –10V, IC = –150mA*2 85 hFE2 VCE = –10V, IC = –500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA*2 Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz Collector cutoff current Collector to base 2SB643 voltage 2SB644 Collector to emitter 2SB643 voltage 2SB644 Emitter to base voltage Forward current transfer ratio –30 V –60 –25 V –50 V 340 90 – 0.35 FE1 V MHz 200 6 15 *2 *1h – 0.6 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SB643, 2SB644 Transistor IC — VCE 700 –700 600 Ta=25˚C –500 400 300 –1mA –100 0 –100 40 60 80 100 120 140 160 0 0 IC/IB=10 –30 –10 –3 Ta=75˚C –1 –8 –12 –16 –20 25˚C – 0.3 –25˚C –100 –30 –10 –3 25˚C Ta=–25˚C –1 75˚C – 0.03 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) fT — IE 200 160 120 80 40 0 1 3 10 –1 –3 300 Ta=75˚C 25˚C –25˚C 200 100 30 Emitter current IE (mA) 100 –0.1 – 0.3 –1 –3 –10 Collector current IC (A) ICEO — Ta 104 IE=0 f=1MHz Ta=25˚C 20 –10 400 0 – 0.01 – 0.03 –10 VCE=–10V 103 ICEO (Ta) ICEO (Ta=25˚C) Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C –8 500 Cob — VCB 24 –6 VCE=–10V Collector current IC (A) 240 –4 600 IC/IB=10 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –2 Base current IB (mA) hFE — IC – 0.3 – 0.1 0 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) –100 –4 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –200 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) –300 0 0 2 –400 –2mA –200 100 –500 –3mA –300 200 –600 –4mA –400 VCE=–10V Ta=25˚C –700 IB=–10mA –9mA –8mA –7mA –6mA –5mA –600 500 IC — I B –800 Collector current IC (mA) –800 Collector current IC (mA) Collector power dissipation PC (mW) PC — Ta 800 16 12 8 102 10 4 0 –1 1 –3 –10 –30 –100 Collector to base voltage VCB (V) 0 40 80 120 160 200 Ambient temperature Ta (˚C)