Transistor 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD969 Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 4.5±0.1 0.55±0.1 Parameter 3 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 ■ Absolute Maximum Ratings 4.1±0.2 7 0. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –25V, IE = 0 –100 nA ICEO VCE = –20V, IB = 0 –1 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –25 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 V Emitter to base voltage VEBO IC = –10µA, IC = 0 –7 hFE1*1 VCE = –2V, IC = –0.5A*2 90 hFE2 VCE = –2V, IC = –1A*2 25 VCE(sat) IC = –500mA, IB = –50mA*2 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 150 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 15 Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage V 220 – 0.4 –1.2 FE1 V MHz 25 *2 *1h V pF Pulse measurement Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 1 2SB790 Transistor PC — Ta IC — VCE 700 –1.0 –9mA –8mA –7mA 600 – 0.8 500 –6mA –5mA – 0.6 400 300 –4mA –3mA – 0.4 200 –2mA –1mA 100 –30 –10 –3 –1 Ta=75˚C 25˚C – 0.3 –25˚C – 0.03 0 40 60 80 100 120 140 160 0 –1 –10 –3 Ta=–25˚C –1 75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) 80 IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –30 –100 Collector to base voltage VCB (V) –1 –3 –10 Collector current IC (mA) fT — I E 320 VCB=–10V Ta=25˚C 500 400 300 Ta=75˚C 25˚C 200 –25˚C 100 280 240 200 160 120 80 40 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) Cob — VCB –3 –6 VCE=–2V Forward current transfer ratio hFE –30 0 –1 –5 600 IC/IB=10 70 –4 hFE — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC 25˚C –2 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 – 0.1 – 0.2 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IB=–10mA 0 2 VCE(sat) — IC –100 –1.2 Collector current IC (mA) Collector power dissipation PC (mW) 800 –10 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100