Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 0.8 0.15 14.5±0.5 0.65 max. +0.1 0.45–0.05 (Ta=25˚C) 2.5±0.5 2.5±0.5 +0.1 ■ Absolute Maximum Ratings 1.0 ● Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 ● 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 0.45–0.05 ● 0.7 3.5±0.1 6.9±0.1 ■ Features Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –55 V Emitter to base voltage VEBO –5 V Peak collector current ICP –200 mA Collector current IC –50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 2 3 1:Emitter 2:Collector 3:Base MT1 Type Package (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current 1 2.5±0.1 Parameter Conditions min typ VCB = –10V, IE = 0 max Unit –100 nA –1 µA ICEO VCE = –10V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –55 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –55 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V VCE = –5V, IC = –2mA 180 *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA – 0.6 V Base to emitter voltage VBE VCE = –1V, IC = –100mA –1 V Noise voltage NV Transition frequency fT *1h FE VCE = –10V, IC = –1mA, GV = 80dB, Rg = 100kΩ, Function = FLAT VCB = –5V, IE = 2mA, f = 200MHz 700 110 mV 150 MHz Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 1 Transistor 2SB1651 PC — Ta IB — VBE –1000 350 –800 300 –600 250 200 –400 150 100 25˚C –100 Collector current IC (mA) 400 –200 –80 Ta=75˚C –25˚C –60 –40 –20 50 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) – 0.2 720 Forward current transfer ratio hFE –3 –1 – 0.3 Ta=75˚C – 0.1 –25˚C – 0.03 – 0.01 – 0.003 – 0.001 –1 –3 –10 –30 – 0.8 –1.0 0 –100 –300 –1000 Collector current IC (mA) 600 VCE=–5V Ta=75˚C 25˚C –25˚C 360 240 120 –3 –10 –30 –1.2 Cob — VCB 480 0 –1 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 Base to emitter voltage VBE (V) hFE — IC IC/IB=10 25˚C – 0.6 Base to emitter voltage VBE (V) VCE(sat) — IC –10 – 0.4 –100 –300 –1000 Collector current IC (mA) 12 Collector output capacitance Cob (pF) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE=–1V VCE=–1V Ta=25˚C Base current IB (µA) Collector power dissipation PC (mW) –120 450 0 2 IC — VBE –1200 500 f=1MHz IE=0 Ta=25˚C 10 8 6 4 2 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V)