Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD638 base voltage 2SD639 Collector to 2SD638 Ratings 30 VCBO 25 VEBO 7 V ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol 2SD638 voltage 2SD639 Collector to emitter 2SD638 voltage 2SD639 Emitter to base voltage 1.0 1 1:Base 2:Collector 3:Emitter Conditions ICBO VCB = 20V, IE = 0 ICEO VCE = 20V, IB = 0 min Unit 0.1 µA 1 µA VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 7 V 60 25 V 50 V VCE = 10V, IC = 10mA 85 160 VCE = 10V, IC = 500mA*2 40 90 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA 0.35 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 340 0.6 V MHz 6 15 *2 FE1 max 30 IC = 10µA, IE = 0 *1 typ hFE2 *1h 4.5±0.1 EIAJ:SC–71 M Type Mold Package VCBO hFE1 Forward current transfer ratio 4.1±0.2 2.5 (Ta=25˚C) Parameter Collector to base 2 2.5 Peak collector current Collector cutoff current 3 0.45±0.05 V 50 Emitter to base voltage ■ Electrical Characteristics 0.55±0.1 Unit V 60 VCEO emitter voltage 2SD639 0.85 (Ta=25˚C) 1.25±0.05 ■ Absolute Maximum Ratings 0. 7 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SD638, 2SD639 Transistor IC — VCE 700 700 600 500 400 300 200 100 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 600 500 4mA 400 3mA 300 2mA 200 1mA 80 120 160 200 Ambient temperature Ta (˚C) 4 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 8 16 3 10 3 25˚C 1 Ta=–25˚C 75˚C 0.3 0.1 0.03 0.1 2 4 0.3 200 1 3 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0 0.01 0.03 10 160 120 80 40 Emitter current IE (mA) –100 0.3 1 3 10 ICEO — Ta 104 VCE=10V 103 8 6 4 102 10 2 0 –30 0.1 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 10 10 VCE=10V ICEO (Ta) ICEO (Ta=25˚C) Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 8 300 Cob — VCB 12 6 Base current IB (mA) Collector current IC (A) fT — IE –10 0 hFE — IC 30 0.01 0.01 0.03 10 240 –3 200 20 IC/IB=10 Collector current IC (A) 0 –1 12 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 30 0.1 300 VBE(sat) — IC IC/IB=10 0.3 400 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 500 0 0 Forward current transfer ratio hFE 40 600 100 0 0 Transition frequency fT (MHz) VCE=10V Ta=25˚C 700 100 0 2 IC — I B 800 Collector current IC (mA) 800 Collector current IC (mA) Collector power dissipation PC (mW) PC — Ta 800 1 1 3 10 30 100 Collector to base voltage VCB (V) 0 40 80 120 160 200 Ambient temperature Ta (˚C)