Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.0 4.5±0.1 0. 0.55±0.1 0.45±0.05 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3 2 2.5 1 1.25±0.05 ● 1.0 R ● 1.0±0.1 ■ Features 2.5±0.1 1.5 R0.9 R0.9 7 0.4 1.5 2.5 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Symbol Parameter min Conditions typ max Unit 100 nA Collector cutoff current ICBO VCB = 25V, IC = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 0.5A*2 200 800 hFE2 VCE = 2V, IC = 1A*2 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 50mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 10 pF ON resistanse Ron*3 60 0.13 FE1 V 1.2 V Ω 1.0 *2 *1h 0.4 *3R on Rank classification Pulse measurement Measurement circuit 1kΩ Rank R S T hFE1 200 ~ 350 300 ~ 500 400 ~ 800 IB=1mA VB Ron= VV VA f=1kHz V=0.3V VB ✕1000(Ω) VA–VB 1 Transistor 2SD1330 PC — Ta IC — VCE 600 400 200 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 4 5 6 30 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 800 Ta=75˚C 600 25˚C –25˚C 400 200 0.1 0.3 1 3 10 Collector current IC (A) 1000 8 Ron measuring circuit IB=1mA 300 ON resistance Ron (Ω) 12 VB 100 V 30 VA f=1kHz V=0.3V 10 3 1 4 0.3 0 10 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 VCB=10V Ta=25˚C 350 300 250 200 150 100 0.1 0.01 0.03 0.1 0.3 1 3 Base current IB (mA) 0 –1 –3 –10 –30 Emitter current IE (A) Ron — IB 16 3 Ta=75˚C 0.3 50 0 0.01 0.03 10 IE=0 Ta=25˚C f=1MHz 1 1 400 Cob — VCB 20 3 VCE=2V Collector current IC (A) 24 10 fT — I E 1000 10 0.1 30 Collector current IC (A) 1200 Forward current transfer ratio hFE IC/IB=10 0.01 0.01 0.03 IC/IB=25 hFE — IC 100 1 100 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 3 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Ta=25˚C 3.5mA 1.0 800 Collector to emitter saturation voltage VCE(sat) (V) IB=4.0mA 0 2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (mW) 1000 10 –100